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{{about|a type of transistor|the RCA computer operating system| Time Sharing Operating System{{!}}Virtual Memory Operating System}}
{{Unreferenced|date=December 2009}}
{{About||the virtual machine Android app|VMOS (software)}}
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[[Image:VMOS cross section en.png|thumb|250 px|The VMOS structure has a V-groove at the gate region]]
{{Refimprove|date=September 2016}}
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[[File:VMOS cross section en.png|thumb|250 px|The VMOS structure has a V-groove at the gate region]]


A '''VMOS''' transistor is a type of [[MOSFET|metal oxide semiconductor transistor]]. Vmos is also used to describe the V-groove shape vertically cut into the substrate material.
A '''VMOS''' ({{IPAc-en|ˈ|v|iː|m|ɒ|s}}) ('''vertical metal oxide semiconductor''' or '''V-groove MOS''') transistor is a type of metal–oxide–semiconductor field-effect transistor ([[MOSFET]]). VMOS is also used to describe the V-groove shape vertically cut into the substrate material.<ref name=Holmes1974>{{cite journal |last1=Holmes |first1=F.E. |last2=Salama |first2=C.A.T. |year=1974 |doi=10.1016/0038-1101(74)90026-4 |volume=17 |issue=8 |title=VMOS—A new MOS integrated circuit technology |journal=Solid-State Electronics |pages=791–797 |bibcode=1974SSEle..17..791H}}</ref>
''VMOS'' {{IPAc-en|ˈ|v|iː|m|ɒ|s}} is an acronym for "vertical metal oxide semiconductor".


The "V" shape of the [[MOSFET]]'s [[Gate oxide|gate]] allows the device to deliver a higher amount of [[Electric current|current]] from the [[Field effect transistor|source]] to the [[Field effect transistor|drain]] of the device. The shape of the [[depletion region]] creates a wider channel, allowing more current to flow through it.
The "V" shape of the [[MOSFET]]'s [[Gate oxide|gate]] allows the device to deliver a higher amount of [[Electric current|current]] from the [[Field effect transistor|source to the drain]] of the device. The shape of the [[depletion region]] creates a wider channel, allowing more current to flow through it.


During operation in blocking mode, the highest electric field occurs at the N<sup>+</sup>/p<sup>+</sup> junction. The presence of a sharp corner at the bottom of the groove enhances the electric field at the edge of the channel in the depletion region, thus reducing the breakdown voltage of the device.<ref>{{Citation |last=Baliga |first=B. Jayant |chapter=Power MOSFETs |date=2008 |title=Fundamentals of Power Semiconductor Devices |pages=276–503 |publisher=Springer US |isbn=9780387473130 |doi=10.1007/978-0-387-47314-7_6}}</ref> This electric field launches electrons into the gate oxide and consequently, the trapped electrons shift the threshold voltage of the MOSFET. For this reason, the V-groove architecture is no longer used in commercial devices.
This structure has a V-groove at the gate region and was used for the first commercial devices.


The device was used as a [[power device]] until more suitable geometries, like the [[Power MOSFET#UMOS|UMOS]] (or Trench-Gate MOS) were introduced in order to lower the maximum [[electric field]] at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS. It's corrent
The device's use was a [[power device]] until more suitable geometries, like the [[Power MOSFET#UMOS|UMOS]] (or Trench-Gate MOS) were introduced in order to lower the maximum [[electric field]] at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS.


==History==
VMOS was invented by [[T. J. Rodgers]] while he was a student at [[Stanford University]].{{Citation needed|date=September 2010}}
The [[MOSFET]] was invented at Bell Labs between 1955 and 1960.<ref name=":0">{{Cite journal |last1=Huff |first1=Howard |last2=Riordan |first2=Michael |date=2007-09-01 |title=Frosch and Derick: Fifty Years Later (Foreword) |url=https://iopscience.iop.org/article/10.1149/2.F02073IF |journal=The Electrochemical Society Interface |volume=16 |issue=3 |pages=29 |doi=10.1149/2.F02073IF |issn=1064-8208}}</ref><ref>{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref><ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories|pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5 }}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |location=Berlin, Heidelberg |page=321}}</ref><ref>{{Cite journal |last1=Ligenza |first1=J.R. |last2=Spitzer |first2=W.G. |date=1960 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |language=en |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5|bibcode=1960JPCS...14..131L }}</ref><ref name="Lojek1202">{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=[[Springer Science & Business Media]] |isbn=9783540342588 |page=120}}</ref> The V-groove construction was pioneered by [[Jun-ichi Nishizawa]] in 1969,<ref>{{cite book |last1=Duncan |first1=Ben |title=High Performance Audio Power Amplifiers |date=1996 |publisher=[[Elsevier]] |isbn=9780080508047 |pages=[https://archive.org/details/highperfomanceau0000dunc/page/178 178 & 406] |url=https://archive.org/details/highperfomanceau0000dunc/page/178}}</ref> initially for the [[static induction transistor]] (SIT), a type of junction [[field-effect transistor]] ([[JFET]]).<ref>{{US patent|4295267}}</ref>

The VMOS was invented by [[Hitachi]] in 1969,<ref name="powerelectronics">{{cite journal |title=Advances in Discrete Semiconductors March On |url=https://www.powerelectronics.com/content/advances-discrete-semiconductors-march |journal=Power Electronics Technology |publisher=[[Informa]] |pages=52–6 |access-date=31 July 2019 |date=September 2005 |archive-url=https://web.archive.org/web/20060322222716/http://powerelectronics.com/mag/509PET26.pdf |archive-date=22 March 2006 |url-status=live}}</ref> when they introduced the first vertical [[power MOSFET]] in Japan.<ref>{{cite book |last1=Oxner |first1=E. S. |title=Fet Technology and Application |date=1988 |publisher=[[CRC Press]] |isbn=9780824780500 |page=18 |url=https://books.google.com/books?id=0AE-0e-sAnsC&pg=PA18}}</ref> [[T. J. Rodgers]], while he was a student at [[Stanford University]], filed a [[US patent]] for a VMOS in 1973.<ref>{{US patent|3924265}}</ref> [[Siliconix]] commercially introduced a VMOS in 1975.<ref name="powerelectronics"/> The VMOS later developed into what became known as the vertical DMOS ([[VDMOS]]).<ref name="Duncan177">{{cite book |last1=Duncan |first1=Ben |title=High Performance Audio Power Amplifiers |date=1996 |publisher=[[Elsevier]] |isbn=9780080508047 |pages=[https://archive.org/details/highperfomanceau0000dunc/page/177 177-8, 406] |url=https://archive.org/details/highperfomanceau0000dunc/page/177}}</ref>

In 1978, [[American Microsystems]] (AMI) released the S2811.<ref name="computerhistory1979">{{cite web |title=1979: Single Chip Digital Signal Processor Introduced |url=https://www.computerhistory.org/siliconengine/single-chip-digital-signal-processor-introduced/ |website=The Silicon Engine |publisher=[[Computer History Museum]] |access-date=14 October 2019}}</ref><ref name="edn">{{cite web |last1=Taranovich |first1=Steve |title=30 years of DSP: From a child's toy to 4G and beyond |url=https://www.edn.com/design/systems-design/4394792/30-years-of-DSP--From-a-child-s-toy-to-4G-and-beyond |website=[[EDN (magazine)|EDN]] |access-date=14 October 2019 |date=August 27, 2012}}</ref> It was the first [[integrated circuit]] chip specifically designed as a [[digital signal processor]] (DSP), and was fabricated using VMOS, a technology that had previously not been mass-produced.<ref name="edn"/>


==References==
==References==
{{Reflist}}
{{Reflist}}

{{Electronic components}}


{{DEFAULTSORT:Vmos}}
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[[Category:Transistor types]]
[[Category:Transistor types]]
[[Category:MOSFETs]]

[[Category:Japanese inventions]]


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{{Technology-stub}}

Latest revision as of 18:50, 10 October 2024

This article is about a type of transistor. For the RCA computer operating system, see Virtual Memory Operating System.
For the virtual machine Android app, see VMOS (software).
The VMOS structure has a V-groove at the gate region

A VMOS (/ˈviːmɒs/) (vertical metal oxide semiconductor or V-groove MOS) transistor is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). VMOS is also used to describe the V-groove shape vertically cut into the substrate material.[1]

The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it.

During operation in blocking mode, the highest electric field occurs at the N+/p+ junction. The presence of a sharp corner at the bottom of the groove enhances the electric field at the edge of the channel in the depletion region, thus reducing the breakdown voltage of the device.[2] This electric field launches electrons into the gate oxide and consequently, the trapped electrons shift the threshold voltage of the MOSFET. For this reason, the V-groove architecture is no longer used in commercial devices.

The device's use was a power device until more suitable geometries, like the UMOS (or Trench-Gate MOS) were introduced in order to lower the maximum electric field at the top of the V shape and thus leading to higher maximum voltages than in case of the VMOS.

History

[edit]

The MOSFET was invented at Bell Labs between 1955 and 1960.[3][4][5][6][7][8] The V-groove construction was pioneered by Jun-ichi Nishizawa in 1969,[9] initially for the static induction transistor (SIT), a type of junction field-effect transistor (JFET).[10]

The VMOS was invented by Hitachi in 1969,[11] when they introduced the first vertical power MOSFET in Japan.[12] T. J. Rodgers, while he was a student at Stanford University, filed a US patent for a VMOS in 1973.[13] Siliconix commercially introduced a VMOS in 1975.[11] The VMOS later developed into what became known as the vertical DMOS (VDMOS).[14]

In 1978, American Microsystems (AMI) released the S2811.[15][16] It was the first integrated circuit chip specifically designed as a digital signal processor (DSP), and was fabricated using VMOS, a technology that had previously not been mass-produced.[16]

References

[edit]
  1. ^ Holmes, F.E.; Salama, C.A.T. (1974). "VMOS—A new MOS integrated circuit technology". Solid-State Electronics. 17 (8): 791–797. Bibcode:1974SSEle..17..791H. doi:10.1016/0038-1101(74)90026-4.
  2. ^ Baliga, B. Jayant (2008), "Power MOSFETs", Fundamentals of Power Semiconductor Devices, Springer US, pp. 276–503, doi:10.1007/978-0-387-47314-7_6, ISBN 9780387473130
  3. ^ Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
  4. ^ Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
  5. ^ KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5.
  6. ^ Lojek, Bo (2007). History of Semiconductor Engineering. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321. ISBN 978-3-540-34258-8.
  7. ^ Ligenza, J.R.; Spitzer, W.G. (1960). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5.
  8. ^ Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. p. 120. ISBN 9783540342588.
  9. ^ Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 178 & 406. ISBN 9780080508047.
  10. ^ U.S. patent 4,295,267
  11. ^ a b "Advances in Discrete Semiconductors March On". Power Electronics Technology. Informa: 52–6. September 2005. Archived (PDF) from the original on 22 March 2006. Retrieved 31 July 2019.
  12. ^ Oxner, E. S. (1988). Fet Technology and Application. CRC Press. p. 18. ISBN 9780824780500.
  13. ^ U.S. patent 3,924,265
  14. ^ Duncan, Ben (1996). High Performance Audio Power Amplifiers. Elsevier. pp. 177-8, 406. ISBN 9780080508047.
  15. ^ "1979: Single Chip Digital Signal Processor Introduced". The Silicon Engine. Computer History Museum. Retrieved 14 October 2019.
  16. ^ a b Taranovich, Steve (August 27, 2012). "30 years of DSP: From a child's toy to 4G and beyond". EDN. Retrieved 14 October 2019.
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