1.
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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes
/ Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; Florence U.) ; Candelori, A (INFN, Padua) ; Dalla Betta, G -F (U. Trento (main)) ; Focardi, E (INFN, Florence ; Florence U.) ; Khomenkov, V (INFN, Padua) ; Piemonte, C (ITC-IRST, Trento) ; Ronchin, S (ITC-IRST, Trento) ; Tosi, C (U. Florence (main)) ; Zorzi, N (ITC-IRST, Trento)
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer back-side. [...]
2004 - 4 p.
- Published in : 10.1109/NSSMIC.2004.1462353
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004
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2.
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Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon
/ Segneri, G (Pisa U. ; INFN, Pisa) ; Borrello, L (Pisa U. ; INFN, Pisa) ; Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; U. Florence (main)) ; Creanza, D (Bari U. ; INFN, Bari) ; Dalla Betta, G F (ITC-IRST, Trento) ; De Palma, M (Bari U. ; INFN, Bari) ; Focardi, E (INFN, Florence ; U. Florence (main)) ; Macchiolo, A (INFN, Florence ; U. Florence (main) ; Manna, N (Bari U. ; INFN, Bari) et al.
The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. [...]
2006 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 573 (2007) 283-286
In : 7th International Conference on Position-Sensitive Detectors, Liverpool, UK, 9 - 13 Sep 2005, pp.283-286
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3.
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Characterization of 3D-DDTC detectors on p-type substrates
/ Dalla Betta, Gian-Franco (INFN, Padua ; Trento U.) ; Boscardin, Maurizio (ITC-IRST, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Darbo, Giovanni (INFN, Genoa) ; Gabos, Paolo (INFN, Padua ; Trento U.) ; Gemme, Claudia (INFN, Genoa) ; Koehler, Michael (Freiburg U.) ; La Rosa, Alessandro (CERN) ; Parzefall, Ulrich (Freiburg U.) ; Pernegger, Heinz (CERN) et al.
We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors..
arXiv:0911.4864.-
2009 - 8 p.
- Published in : (2009) , pp. 29-36
Fulltext: PDF; External link: Preprint
In : IEEE Nuclear Science Symposium And Medical Imaging Conference, Orlando, FL, USA, 25 Oct - 31 Oct 2009, pp.29-36
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4.
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Development of 3D-DDTC pixel detectors for the ATLAS upgrade
/ Dalla Betta, Gian-Franco (INFN, Padua ; ITC-IRST, Trento) ; Boscardin, Maurizio (Fond. Bruno Kessler, Povo) ; Darbo, Giovanni (INFN, Genoa) ; Gemme, Claudia (INFN, Genoa) ; La Rosa, Alessandro (CERN) ; Pernegger, Heinz (CERN) ; Piemonte, Claudio (ITC-IRST, Trento) ; Povoli, Marco (INFN, Padua ; ITC-IRST, Trento) ; Ronchin, Sabina (Fond. Bruno Kessler, Povo) ; Zoboli, Andrea (INFN, Padua ; ITC-IRST, Trento) et al.
We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. [...]
arXiv:0910.3629.-
2011 - 20 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 636 (2011) S15-S23
Fulltext: PDF; External link: Preprint
In : 7th International Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 29 Aug - 01 Sep 2009, pp.S15-S23
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5.
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6.
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Thin and edgeless sensors for ATLAS pixel detector upgrade
/ Ducourthial, Audrey (Paris U., VI-VII) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) ; D'Eramo, Louis (Paris U., VI-VII) ; Marchiori, Giovanni (Paris U., VI-VII) ; Luise, Ilaria (Paris U., VI-VII) ; Bagolini, Alvise (Fond. Bruno Kessler, Povo) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Bosisio, Luciano (INFN, Trieste ; Trieste U.) ; Darbo, Giovanni (INFN, Genoa) et al.
To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. [...]
arXiv:1710.03557.-
2017-12-19 - 10 p.
- Published in : JINST 12 (2017) C12038
In : The 11th International conference in Position Sensitive Detectors, Milton Keynes, United Kingdom, 3 - 8 Sep 2017, pp.C12038
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7.
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Development of radiation hard semiconductor
: devices for very high luminosity colliders
/ Mauro De Palma, D (INFN, Bari) ; Radicci, V (INFN, Bari) ; Lozano, M (Barcelona, Autonoma U.) ; Campabadal, F (Barcelona, Autonoma U.) ; Ullán, M (Barcelona, Autonoma U.) ; Martínez, C (Barcelona, Autonoma U.) ; Fleta, C (Barcelona, Autonoma U.) ; Key, M (Barcelona, Autonoma U.) ; Raffí, J M (Barcelona, Autonoma U.) ; Kordas, G (Democritos Nucl. Res. Ctr.) et al.
CERN-LHCC-2002-003 ; LHCC-P-6.
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2002. - 36 p.
Full text - CERN library copies
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8.
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Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
/ Boscardin, Maurizio ; Betta, G F D ; Bruzzi, Mara ; Candelori, Andrea ; Focardi, Ettore ; Khomenkov, Volodymyr P ; Piemonte, Claudio ; Ronchin, S ; Tosi, C ; Zorzi, N
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. [...]
2005
- Published in : IEEE Trans. Nucl. Sci. 52 (2005) 1048-1053
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10.
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