1.
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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2.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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3.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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4.
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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system
/ Vicente Leitao, P (CERN) ; Aglieri Rinella, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Cecconi, L (CERN) ; de Melo, J L A (CERN) ; De Robertis, G (INFN, Bari ; Bari U.) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Dorda Martin, A (CERN ; KIT, Karlsruhe) ; Dorosz, P (CERN) ; Fang, X (Strasbourg, IPHC) et al.
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C01044
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01044
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5.
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Digital Pixel Test Structures implemented in a 65 nm CMOS process
/ Rinella, Gianluca Aglieri (CERN) ; Andronic, Anton (Munster U.) ; Antonelli, Matias (INFN, Trieste ; Trieste U.) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste ; Trieste U.) ; Becht, Pascal (U. Heidelberg (main)) ; Beole, Stefania (Turin U. ; INFN, Turin) ; Braach, Justus (CERN ; Hamburg U.) ; Buckland, Matthew Daniel (INFN, Trieste ; Trieste U.) ; Buschmann, Eric (CERN) et al.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D; on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. [...]
arXiv:2212.08621.-
2023-08-04 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168589
Fulltext: 2212.08621 - PDF; Publication - PDF;
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6.
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Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
/ Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.
In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213
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7.
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Measurement of the lifetime of charged and neutral D mesons with high resolution silicon strip detectors
/ Bailey, R (Rutherford) ; Belau, E R (Munich, Max Planck Inst.) ; Bohringer, T (CERN) ; Bosman, M (CERN) ; Chabaud, V (CERN) ; Daum, C (NIKHEF, Amsterdam) ; Dijkstra, H (NIKHEF, Amsterdam) ; Gill, S (Rutherford) ; Gillman, A (Rutherford) ; Gilmore, R S (Bristol U.) et al.
1985 - 7 p.
- Published in : Z. Phys. C 28 (1985) 357-363
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8.
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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9.
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Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology
/ Yelkenci, A. (Nikhef, Amsterdam) ; Qui, S. (Utrecht U.) ; Rossewij, M.J. (Utrecht U.) ; Grelli, A. (Utrecht U.) ; Gajanana, D. (NIKHEF, Amsterdam) ; Gromov, V. (NIKHEF, Amsterdam)
With Inner Tracking System v3 (ITS3), the ALICE experiment is pursuing a wafer-scale Monolithic Active Pixel Sensor (MAPS). The chip is being developed in TPSCo 65 nm ISC technology which is under study in the framework of CERN EP R&D; on monolithic sensors for High Energy Physics (HEP) applications. [...]
2023
- Published in : Journal of Instrumentation 18 (2023) C02017
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10.
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Prototype measurement results in a 65 nm technology and TCAD simulations towards more radiation tolerant monolithic pixel sensors
/ Lemoine, C (CERN ; Strasbourg, IPHC) ; Aglieri Rinella, G (CERN) ; Baudot, J (Strasbourg, IPHC) ; Borghello, G (CERN) ; Carnesecchi, F (CERN) ; Hillemanns, H (CERN) ; Kluge, A (CERN) ; Kucharska, G (CERN) ; Leitao, P V (CERN) ; Mager, M (CERN) et al.
Early measurements on monolithic pixel sensor prototypes in the TPSCo 65 nm technology indicate a different response and radiation tolerance (up to5×10$^{15}$ 1 MeV n$_{eq}$ cm) for different sensor layout and process variants, illustrating the importance of layout and process in the path towards increased sensor radiation tolerance. Using these measurement results, TCAD simulations provide more insight to link the macroscopic behaviour of specific sensor variants to the details of its structure. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C02033
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02033
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