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Defect characterization in silicon particle detectors irradiated with Li ions
/ Scaringella, M (INFN, Florence ; U. Florence (main)) ; Menichelli, D (INFN, Florence ; U. Florence (main)) ; Candelori, A (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Bruzzi, M (INFN, Florence ; U. Florence (main))
High Energy Physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors that can withstand fast hadron fluences up to $10^{16}$ cm$^{-2}$. In order to test the detectors radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. [...]
2006 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 53 (2006) 589-594
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2.
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Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon
/ Segneri, G (Pisa U. ; INFN, Pisa) ; Borrello, L (Pisa U. ; INFN, Pisa) ; Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; U. Florence (main)) ; Creanza, D (Bari U. ; INFN, Bari) ; Dalla Betta, G F (ITC-IRST, Trento) ; De Palma, M (Bari U. ; INFN, Bari) ; Focardi, E (INFN, Florence ; U. Florence (main)) ; Macchiolo, A (INFN, Florence ; U. Florence (main) ; Manna, N (Bari U. ; INFN, Bari) et al.
The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. [...]
2006 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 573 (2007) 283-286
In : 7th International Conference on Position-Sensitive Detectors, Liverpool, UK, 9 - 13 Sep 2005, pp.283-286
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3.
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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes
/ Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; Florence U.) ; Candelori, A (INFN, Padua) ; Dalla Betta, G -F (U. Trento (main)) ; Focardi, E (INFN, Florence ; Florence U.) ; Khomenkov, V (INFN, Padua) ; Piemonte, C (ITC-IRST, Trento) ; Ronchin, S (ITC-IRST, Trento) ; Tosi, C (U. Florence (main)) ; Zorzi, N (ITC-IRST, Trento)
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer back-side. [...]
2004 - 4 p.
- Published in : 10.1109/NSSMIC.2004.1462353
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004
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4.
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A monolithic silicon detector for pre treatments verification in intensity modulated radiotherapy
/ Bruzzi, M (INFN, Florence ; Florence U., Dip. di Energetica) ; Talamonti, C (INFN, Florence ; Florence U.) ; Scaringella, M (INFN, Florence ; Florence U., Dip. di Energetica) ; Bucciolini, M (INFN, Florence ; Florence U.)
2012
Fulltext: PDF;
In : 13th international conference on nuclear reaction mechanisms, Villa Monastero, Varenna, Italy, 11 - 15 Jun 2012, pp.451
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5.
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The CMS Silicon Tracker Detector: an Overview of the R&D Current Status
/ Santocchia, A (Perugia U. ; INFN, Perugia) ; Albergo, S (Catania U. ; INFN, Catania) ; Angarano, M (Bari U. ; INFN, Bari) ; Azzi, P (Padua U. ; INFN, Padua) ; Babucci, E (Perugia U. ; INFN, Perugia) ; Bacchetta, N (Padua U. ; INFN, Padua) ; Bader, A (Bari U. ; INFN, Bari) ; Bagliesi, G (Pisa U. ; INFN, Pisa) ; Bartalini, P (Perugia U. ; INFN, Perugia) ; Basti, A (Pisa U. ; INFN, Pisa) et al.
The paper describes the Silicon Tracking System of the Compact Muon Solenoid ( CMS) and reviews the most recent results of the R&D; activity on radiation resistant microstrip silicon detectors. The Silicon Tracker of CMS consists of 5 layers of microstrip detectors in the barrel and 10 disks on either side of the end-cap region. [...]
CMS-CR-1998-009.-
Geneva : CERN, 1998
Fulltext: PDF PS.Z;
In : 3rd International Hisohima Symposium on the Development and Application of Semiconductor Tracking Detectors, Melbourne, Australia, 9 - 12 Dec 1997
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6.
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Irradiation effects on thin epitaxial silicon detectors
/ Khomenkov, V ; Bisello, D ; Bruzzi, M ; Candelori, A ; Litovchenko, A P ; Piemonte, C ; Rando, R ; Ravotti, F ; Zorzi, N
2006 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 61-65
In : 10th European Symposium on Semiconductor Detectors (formerly 'Elmau Conference'), Wildbad Kreuth, Germany, 12 - 16 Jun 2005, pp.61-65
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7.
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Lithium ion irradiation effects on epitaxial silicon detectors
/ Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772
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8.
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A study of the radiation tolerance of poly-crystalline and single-crystalline CVD diamond to 800 MeV and 24 GeV protons
/ Bäni, L (Zurich, ETH) ; Alexopoulos, A (CERN) ; Artuso, M (Syracuse U.) ; Bachmair, F (Zurich, ETH) ; Bartosik, M (CERN) ; Beck, H (Gottingen U.) ; Bellini, V (INFN, Florence) ; Belyaev, V (Moscow Phys. Eng. Inst.) ; Bentele, B (Colorado U.) ; Bes, A (LPSC, Grenoble) et al.
We have measured the radiation tolerance of poly-crystalline and single-crystalline diamonds grown by the chemical vapor deposition (CVD) process by measuring the charge collected before and after irradiation in a 50 m pitch strip detector fabricated on each diamond sample. We irradiated one group of sensors with 800 MeV protons, and a second group of sensors with 24 GeV protons, in steps, to protons cm−2 and protons cm−2 respectively. [...]
2019 - 17 p.
- Published in : J. Phys. D 52 (2019) 465103
Fulltext: PDF;
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9.
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Lithium ion irradiation of standard and oxygenated silicon diodes
/ Candelori, A ; Betta, G F D ; Bisello, D ; Giubilato, P ; Kaminski, A ; Litovchenko, A P ; Lozano, A ; Petrie, J R ; Rando, R ; Ullán, M et al.
The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. [...]
2004
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 2865-2871
In : 7th European Conference On Radiation And Its Effects On Components And Systems, Noordwijk, The Netherlands, 15 - 20 Sep 2003, pp.393-399
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10.
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Latest Results on the Radiation Tolerance of Diamond Detectors
/ Bäni, L (ETH, Zurich (main)) ; Alexopoulos, A (CERN) ; Artuso, M (Syracuse U. (main)) ; Bachmair, F (ETH, Zurich (main)) ; Bartosik, M (CERN) ; Beck, H (Gottingen U.) ; Bellini, V (INFN, Catania) ; Belyaev, V (Moscow Phys. Eng. Inst.) ; Bentele, B (Colorado U.) ; Bes, A (LPSC, Grenoble) et al.
/Rd42
We have measured the radiation tolerance of chemical vapor deposition (CVD) diamond against protons and neutrons. The relative radiation damage constant of 24 GeV protons, 800 MeV protons, 70 MeV protons, and fast reactor neutrons is presented. [...]
SISSA, 2019 - 5 p.
- Published in : PoS LeptonPhoton2019 (2019) 079
External link: Fulltext
In : XXIX International Symposium on Lepton Photon Interactions at High Energies, Toronto, Canada, 5 - 10 Aug 2019, pp.079
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