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CERN Document Server 2,045 ჩანაწერია ნაპოვნი  1 - 10შემდეგიდასასრული  ჩანაწერთან გადასვლა: ძიებას დასჭირდა 1.54 წამი. 
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Lattice location of impurities in silicon Carbide / Granadeiro Costa, Angelo Rafael
The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor [...]
CERN-THESIS-2018-072 - 157 p.

Fulltext
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC / Costa, A R G (IST, Lisbon (main)) ; Wahl, U (IST, Lisbon (main)) ; Correia, J G (IST, Lisbon (main)) ; David-Bosne, E (IST, Lisbon (main)) ; Amorim, L M (Leuven U.) ; Augustyns, V (Leuven U.) ; Silva, D J (Porto U., Astron. Dept.) ; da Silva, M R (Lisbon U., CFNUL) ; Pereira, L M C (Leuven U.) /ISOLDE
Using radioactive isotopes produced at the CERN-ISOLDE facility, the lattice location of the implanted transition metal (TM) ions $^56$Mn, $^59$Fe and $^65$Ni in n-type single-crystalline hexagonal 6H-SiC was studied by means of the emission channeling technique. TM probes on carbon coordinated tetrahedral interstitial sites ($T_C$) and on substitutional silicon sites ($S_{Si,h+k}$) were identified. [...]
2017 - 10 p. - Published in : Semicond. Sci. Technol. 33 (2017) 015021 Fulltext: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice location of implanted transition metals in 3C–SiC / Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven (BE)) ; Silva, Daniel (Universidade do Porto (PT)) ; Castro Ribeiro Da Silva, Manuel (Universidade de Lisboa (PT)) ; Bharuth-Ram, Krishanlal (University of Kwazulu - Natal (ZA)) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE)) /EC-SLI Collaboration
We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). [...]
CERN-OPEN-2017-022.- Lisboa : Instituto Superior Técnico, 2017 - 11 p. - Published in : J. Phys. D 50 (2017) 215101 Preprint: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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 Lattice Location of Transition Metals in Semiconductors / Vantomme, Ainstitute - ISOLDE.
Approved: 06 July 1998.-
Status: Finished
Fulltext: IS368 - EPS JPG PDF; IS368_bw - JPG; IS368_2 - EPS JPG PDF;
Experiment: IS368
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice location of transition metals in silicon by means of emission channeling / da Silva, Daniel José
The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades [...]
CERN-THESIS-2014-264 - 214 p.

Fulltext
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice location of implanted Ag in Si / Wahl, U ; Correia, J G ; Vantomme, A /ISOLDE Collaboration
The lattice location of implanted silver in Si was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of radioactive $^{111}$Ag at a dose of 2-3 $\times 10^{12}$ cm$^{-2}$, we identify around 30% of Ag on near-substitutional sites (around 0.45 from ideal S-sites). [...]
CERN-OPEN-2003-046.- Geneva : CERN, 2002 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., B 190 (2002) 543-546 Access to fulltext document: PDF;
In : 15th International Conference on Ion Beam Analysis, Cairns, Australia, 15 - 20 Jul 2001, pp.543-546 - CERN library copies
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice sites of implanted Cu and Ag in ZnO / Wahl, Ulrich ; Rita, E ; Correia, J G ; Agne, Thomas ; Alves, E ; Carvalho-Soares, João /ISOLDE Collaboration
The group $\textrm{I}$b impurities Cu and Ag on substitutional Zn sites are among possible candidates for p-type doping of ZnO. In order to explore possible lattice sites of Cu and Ag in ZnO the radioactive impurities $^{67}\!$Cu and $^{111}\!$Ag were implanted at doses of $4\!\times\!10^{12}$cm$^{-2}\to1\!\times\!10^{14}$cm$^{-2}$ at 60 keV into ZnO single crystals. [...]
CERN-OPEN-2006-049.- Geneva : CERN, 2006 - 5 p. - Published in : Superlattices Microstruct. 39 (2006) 229-237 Access to fulltext document: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Transition metal impurities on the bond-centered site in Ge / Decoster, S (Leuven U.) ; Cottenier, S (Leuven U. ; RWTH Aachen U. ; U. Gent) ; De Vries, B (Leuven U.) ; Emmerich, H (RWTH Aachen U.) ; Wahl, U (ITN, Sacavem) ; Correia, J G (ITN, Sacavem) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the substitutional Ge position. [...]
CERN-OPEN-2013-004.- Leuven : Instituut voor Kern- en Stralingsfysica, 2009 - 4 p. - Published in : Phys. Rev. Lett. 102 (2009) 065502 Fulltext: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN / IS634 Collaboration
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of $^{27}$Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. [...]
2021 - 10 p. - Published in : Advanced Electronic Materials 7 (2021) 2100345 Submitted version, due to embargo period until 19.6.2022: PDF; Supporting Information: PDF;
დეტალური ჩანაწერი - მსგავსი ჩანაწერები
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Identification of Ag-acceptors in $^{111}\!$Ag $^{111}\!$Cd doped ZnTe and CdTe / Hamann, J ; Burchard, A ; Deicher, M ; Filz, T ; Lany, S ; Ostheimer, V ; Strasser, F ; Wolf, H ; Wichert, T /ISOLDE Collaboration
Nominally undoped ZnTe and CdTe crystals were implanted with radioactive $^{111}\!$Ag, which decays to $^{111}\!$Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. [...]
CERN-EP-2000-025.- Geneva : CERN, 2000 - 8 p. - Published in : J. Cryst. Growth 214-215 (2000) 207-211 Fulltext: PDF;
In : 9th International Conference on II-VI Compounds, Kyoto, Japan, 1 - 5 Nov 1999 - CERN library copies
დეტალური ჩანაწერი - მსგავსი ჩანაწერები

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