CERN Accelerating science

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1.
Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics / Danzeca, S (CERN) ; Peronnard, P (CERN) ; Foucard, G (CERN) ; Tsiligiannis, G (CERN) ; Secondo, R (IES, Montpellier) ; Ferraro, R (IES, Montpellier) ; McAllister, C G (CERN) ; Borel, T (IES, Montpellier) ; Brugger, M (CERN) ; Masi, A (CERN) et al.
Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices..
2017 - 6 p. - Published in : 10.1109/NSREC.2017.8115434
In : 2017 IEEE Radiation Effects Data Workshop, New Orleans, LA, USA, 17 - 21 Jul 2017
2.
2018 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics / Danzeca, Salvatore (CERN) ; Foucard, G (CERN) ; Tsiligiannis, G (CERN) ; Ferraro, R (CERN ; Montpellier U.) ; Piscopo, G (CERN) ; McAllister, C G (CERN) ; Borel, T (CERN) ; Peronnard, P (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) et al.
The sensitivity of a variety of components for particle accelerators electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital and mixed devices..
2018 - 6 p. - Published in : 10.1109/NSREC.2018.8584266
In : 2018 IEEE Radiation Effects Data Workshop, Waikoloa Village, HI, USA, 16 - 20 Jul 2018, pp.8584266
3.
2023 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator / Ferraro, Rudy (CERN) ; Gkountoumis, Panagiotis (CERN) ; Foucard, Gilles (CERN) ; Ventura, Antonio (CERN) ; Scialdone, Antonio (CERN ; Montpellier U.) ; Zimmaro, Alessandro (CERN ; Montpellier U.) ; Glecer, Bruno (CERN) ; Koseoglou, Sokratis (CERN) ; Botias, Cai Arcos (CERN) ; Masi, Alessandro (CERN) et al.
The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices..
2023 - 8 p. - Published in : 10.1109/REDW61050.2023.10265814
In : 2023 IEEE Radiation Effects Data Workshop (REDW 2023): (in conjunction with 2023 NSREC), Kansas City, Missouri, United States, 24 - 28 Jul 2023
4.
Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors / Secondo, R (CERN ; CEM2, Montpellier) ; Foucard, G (CERN) ; Danzeca, S (CERN) ; Losito, R (CERN) ; Peronnard, P (CERN) ; Masi, A (CERN) ; Brugger, M (CERN) ; Dusseau, L (CEM2, Montpellier)
SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. [...]
2015 - 4 p. - Published in : 10.1109/RADECS.2015.7365582
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.7365582
5.
System Level Radiation Characterization of a 1U CubeSat Based on CERN Radiation Monitoring Technology / Secondo, R (CERN ; IES, Montpellier) ; García Alía, R (CERN) ; Peronnard, P (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) ; Danzeca, S (CERN) ; Merlenghi, A (CERN) ; Chesta, E (CERN) ; Vaillè, J R (IES, Montpellier) ; Bernard, M (Montpellier U.) et al.
A CubeSat payload (PL) was designed at CERN and at the University Space Center of Montpellier, for the measurement of radiation and its effects on electronics and single event latchup recording on SRAM devices. The PL and the data handling modules were tested at the CERN mixed-field facility, in a Low Earth Orbit representative environment
2018 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1694-1699
6.
SEE Testing on commercial power MOSFETs / Fernández-Martínez, Pablo (CERN) ; Papadopoulou, Athina (CERN) ; Danzeca, Salvatore (CERN) ; Foucard, Gilles (CERN) ; Alía, Rubén García (CERN) ; Kastriotou, Maria (CERN ; Rutherford) ; Cazzaniga, Carlo (Rutherford) ; Tsiligiannis, Giorgos (CERN) ; Gaillard, Remi (Unlisted, FR)
This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions..
2020 - 8 p. - Published in : 10.1109/RADECS50773.2020.9857706
In : 20th European Conference on Radiation and its Effects on Components and Systems (RADECS 2020), Online, France, 19 - 23 Jun 2020
7.
COTS Optocoupler Radiation Qualification Process for LHC Applications Based on Mixed-Field Irradiations / Ferraro, Rudy (CERN) ; Foucard, Gilles (CERN) ; Infantino, Angelo (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; García Alía, Rubén (CERN) ; Danzeca, Salvatore (CERN)
Optoelectronic components are the most sensitive devices of systems exposed to radiation environments. Displacement damage (DD) effects can severely degrade the performances of such devices, which are extensively used in critical electronic systems installed in particle accelerators or nuclear power plants. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1395-1403
8.
A New RadMon Version for the LHC and its Injection Lines / Spiezia, G (CERN) ; Peronnard, P (CERN) ; Masi, A (CERN) ; Brugger, M (CERN) ; Brucoli, M (CERN) ; Danzeca, S (CERN ; CEM2, Montpellier) ; Garcia Alia, R (CERN ; CEM2, Montpellier) ; Losito, R (CERN) ; Mekki, J (CERN) ; Oser, P (CERN) et al.
A system to monitor the radiation levels is required in the Large Hadron Collider (LHC) and its injection lines in order to quantify the radiation effects on electronics. Thus, the RadMons were installed in critical areas where equipment is or will be placed. [...]
2014 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 61 (2014) 3424-3431
9.
The CELESTA CubeSat In-Flight Radiation Measurements and Their Comparison With Ground Facilities Predictions / Coronetti, Andrea (CERN) ; Zimmaro, Alessandro (CERN) ; Alía, Rubén García (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Slipukhin, Ivan (CERN) ; Amodio, Alessio (CERN) ; Dijks, Jasper (CERN) ; Peronnard, Paul (CERN) ; Secondo, Raffaello (CERN) et al.
The CELESTA CubeSat has employed radiation monitors developed by the Conseil Européen pour la Recherche Nucléaire (CERN) Centre, used for measuring the radiation environment at accelerators, to measure the space radiation field in a medium-Earth orbit (MEO). The technology is based on three static random-access memories (SRAMs) that are sensitive to single-event upsets (SEUs) and single-event latchups (SELs). [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1623-1630
10.
Embedded Detection and Correction of SEU Bursts in SRAM Memories Used as Radiation Detectors / Secondo, R. (CERN) ; Foucard, G. (CERN) ; Danzeca, S. (CERN) ; Losito, R. (CERN) ; Peronnard, P. (CERN) ; Masi, A. (CERN) ; Brugger, M. (CERN) ; Dusseau, L. (Montpellier U.)
SRAM memories are widely used as particle fluence detectors in high radiation environments, such as in the Radiation Monitoring System (RadMon) currently in operation in the CERN accelerator complex. Multiple Cell Upsets (MCUs), arising from micro-latchup events, are characterized by a large number of SEUs, ultimately affecting the measurement of particle fluxes and resulting in corrupted data and accuracy losses. [...]
2016 - Published in : IEEE Trans. Nucl. Sci. 63 (2016) 2168-2175
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.2168-2175

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