CERN Accelerating science

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1.
Energy Dependence of Tungsten-Dominated SEL Cross Sections / Alia, R G (CERN ; CEM2, Montpellier) ; Brugger, M (CERN) ; Danzeca, S (CERN) ; Ferlet-Cavrois, V (ESTEC, Noordwijk) ; Poivey, C (ESTEC, Noordwijk) ; Roed, K (U. Oslo (main) ; Oslo U.) ; Saigné, F (CEM2, Montpellier ; Montpellier U.) ; Spiezia, G (CERN) ; Uznanski, S (CERN) ; Wrobel, F (CEM2, Montpellier ; IUF, Paris)
The energy dependence of proton-induced Single Event Latchup (SEL) failures is investigated for different Static Random Access Memories (SRAMs) and an Analog-to-Digital Converter (ADC) through experimental measurements in the 30-230 MeV range. It is observed that for several of them, the measurements are not compatible with a saturation below the maximum energy tested. [...]
2014 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 61 (2014) 2718-2726
2.
SEL Cross Section Energy Dependence Impact on the High Energy Accelerator Failure Rate / García Alía, Rubén (CERN) ; Blackmore, Ewart W (TRIUMF) ; Brugger, Markus (CERN) ; Danzeca, Salvatore (CERN) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Gaillard, Rémi (Unlisted, FR) ; Mekki, Julien (CERN) ; Poivey, Christian (ESTEC, Noordwijk) ; Røed, Ketil (U. Oslo (main)) ; Saigné, Frédéric (CEM2, Montpellier) et al.
We use a single event latchup (SEL) model calibrated to heavy ion (HI) and proton data below 230 MeV to extrapolate the proton cross section to larger energies and evaluate the impact of the potential cross section increase with energy on the SEL rate in different environments. We show that in the case of devices with a large LET onset for HI and a certain amount of tungsten near the sensitive volume (SV), the calculated failure rates for energetic environments based on monoenergetic test data can significantly underestimate the real value. [...]
2014 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 61 (2014) 2936-2944
3.
SEL Hardness Assurance in a Mixed Radiation Field / Alia, Ruben Garcia (CERN) ; Brugger, Markus (CERN) ; Danzeca, Salvatore (CERN) ; Ferlet-Cavrois, Veronique (ESTEC, Noordwijk) ; Frost, Christopher (Rutherford) ; Gaillard, Remi ; Mekki, Julien (CERN) ; Saigné, Frederic (CEM2, Montpellier) ; Thornton, Adam (CERN) ; Uznanski, Slawosz (CERN) et al.
This paper explores the relationship between monoenergetic and mixed-field Single Event Latchup (SEL) cross sections, concluding that for components with a very strong energy dependence and highly-energetic environments, test results from monoenergetic or soft mixed-field spectra can significantly underestimate the operational failure rate. We introduce a semi-empirical approach that can be used to evaluate the SEL rate for such environments based on monoenergetic measurements and information or assumptions on the respective sensitive volume and materials surrounding it. [...]
2015 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 62 (2015) 2555-2562
4.
SEE on Different Layers of Stacked-SRAMs / Gupta, V (CEM2, Montpellier ; Montpellier U.) ; Bosser, A (CEM2, Montpellier ; Montpellier U. ; Jyvaskyla U.) ; Tsiligiannis, G (CERN) ; Rousselet, M (Montpellier U.) ; Mohammadzadeh, A (ESTEC, Noordwijk) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main)) ; Virtanen, A (Jyvaskyla U.) ; Puchner, H (Cypress Semiconductor, San Jose) ; Saigné, F (Montpellier U.) ; Wrobel, F (Montpellier U. ; IUF, Paris) et al.
This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. [...]
2015 - Published in : IEEE Trans. Nucl. Sci. 62 (2015) 2673-2678
5.
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs / Bosser, A (CEM2, Montpellier ; Jyvaskyla U.) ; Gupta, V (CEM2, Montpellier ; Montpellier U.) ; Tsiligiannis, G (CERN) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main)) ; Kettunen, H (Jyvaskyla U.) ; Puchner, H (Cypress Semiconductor, San Jose) ; Saigne, F (Montpellier U.) ; Virtanen, A (Jyvaskyla U.) ; Wrobel, F (Montpellier U. ; IUF, Paris) ; Dilillo, L (Montpellier U.)
During irradiation testing of RAMs, various failure scenarios may occur which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them..
2015 - Published in : IEEE Trans. Nucl. Sci. 62 (2015) 2620-2626
6.
Mechanisms of Electron-Induced Single-Event Latchup / Tali, Maris (Jyvaskyla U.) ; Alia, Ruben García (CERN) ; Brugger, Markus (CERN) ; Ferlet-Cavrois, Véronique (ESTEC, Noordwijk) ; Corsini, Roberto (CERN) ; Farabolini, Wilfrid (CERN) ; Javanainen, Arto (Jyvaskyla U.) ; Santin, Giovanni (ESTEC, Noordwijk) ; Boatella Polo, Cesar (ESTEC, Noordwijk) ; Virtanen, Ari (Jyvaskyla U.)
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. [...]
2018 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2018) 437-443 Fulltext : PDF;
7.
SEE Measurements and Simulations Using Mono-Energetic GeV-Energy Hadron Beams / Alia, Ruben Garcia (CERN ; Montpellier U.) ; Poivey, Christian (ESTEC, Noordwijk) ; Brugger, Markus (CERN) ; Roed, Ketil (Oslo U.) ; Uznanski, Slawosz (CERN) ; Wrobel, Frederic (Montpellier U.) ; Ferlet-Cavrois, Veronique (ESTEC, Noordwijk) ; Danzeca, Salvatore (Montpellier U.) ; Saigne, Frederic (Montpellier U.) ; Spiezia, Giovanni (CERN)
Single Event Upset (SEU) measurements were performed on the ESA SEU Monitor using mono-energetic GeV-energy hadron beams available in the North Experimental Area at CERN. A 400 GeV proton beam in the H4IRRAD test area and a 120 GeV mixed pion and proton beam at the CERN-EU high Energy Reference Field facility (CERF) were used for this purpose. [...]
2013 - Published in : IEEE Trans. Nucl. Sci. 60 (2013) 4142-4149
8.
Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors / Secondo, R (CERN ; CEM2, Montpellier) ; Foucard, G (CERN) ; Danzeca, S (CERN) ; Losito, R (CERN) ; Peronnard, P (CERN) ; Masi, A (CERN) ; Brugger, M (CERN) ; Dusseau, L (CEM2, Montpellier)
SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. [...]
2015 - 4 p. - Published in : 10.1109/RADECS.2015.7365582
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.7365582
9.
Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC / Danzeca, S (CERN) ; Spiezia, G (CERN) ; Brugger, M (CERN) ; Dusseau, L (CEM2, Montpellier) ; Foucard, G (CERN) ; Garcia Alia, R (CERN) ; Mala, P (PSI, Villigen) ; Masi, A (CERN) ; Peronnard, P (CERN) ; Soltes, J (Rez, Nucl. Phys. Inst.) et al.
An 8 Mbit 90-nm memory is proposed as a new high energy hadron fluence sensor. The obtained cross sections for protons (30 MeV up to 480 MeV) and thermal neutrons as well as their dependency on the TID together with the control circuitry is presented. [...]
2014 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 61 (2014) 3458-3465
10.
Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit For LEO Space Applications / Secondo, Raffaello (CERN ; IES, Montpellier) ; Alía, Ruben (CERN) ; Peronnard, Paul (CERN) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN) ; Merlenghi, Anne-Sophie (CERN) ; Vaillé, Jean-Roch (IES, Montpellier ; U. Nîmes, Nîmes) ; Dusseau, Laurent (IES, Montpellier)
A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. [...]
2017 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2107 - 2114

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