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High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments
/ Peric, Ivan (Heidelberg U.) ; Augustin, Heiko (Heidelberg U.) ; Backhaus, Malte (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Benoit, Mathieu (CERN) ; Berger, Niklaus (Heidelberg U.) ; Bompard, Frederic (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Clemens, Jean-Claude (Marseille, CPPM) ; Dannheim, Dominik (CERN) et al.
High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated [...]
2013 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 731 (2013) 131-136
In : 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Inawashiro, Japan, 3 - 7 Sep 2012, pp.131-136
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2.
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High-voltage pixel sensors for ATLAS upgrade
/ Perić, I (Heidelberg U.) ; Kreidl, C (Heidelberg U.) ; Fischer, P (Heidelberg U.) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Clemens, J -C (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Liu, J (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) et al.
The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. [...]
2014 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 172-176
Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.172-176
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3.
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4.
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Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV/HR-CMOS Technology
/ Feigl, Simon (CERN) ; Peric, Ivan (Heidelberg U.) ; Backhaus, M (CERN) ; Barbero, M (Marseille, CPPM) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Clemens, J C (Marseille, CPPM) ; Liu, J (Marseille, CPPM) ; Muenstermann, D (Geneva U.) ; Pangaud, P (Marseille, CPPM) et al.
SISSA, 2014
- Published in : PoS TIPP2014 (2014) 280
Fulltext: PDF; External link: Published version from PoS
In : International Conference on Technology and Instrumentation in Particle Physics 2014, Amsterdam, Netherlands, 2 - 6 Jun 2014, pp.280
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5.
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The ultra-lightweight support structure and gaseous helium cooling for the Mu3e silicon pixel tracker
/ Berger, N (Heidelberg U.) ; Herkert, A (Heidelberg U.) ; Huxold, L (Heidelberg U.) ; Schöning, A (Heidelberg U.) ; Wiedner, D (Heidelberg U. ; CERN) ; Windelband, B (Heidelberg U.)
The Mu3e experiment searches for charged lepton flavor violation in the rare decay μ→eee. In order to reach a sensitivity of better than 10(−)(16), more than 10(9) muon decays per second have to be observed over a running time of one year. [...]
2014
- Published in : JINST 9 (2014) C08023
In : International Conference on Instrumentation for Colliding Beam Physics 2014, Novosibirsk, Russia, 24 Feb - 1 Mar 2014, pp.C08023
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6.
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Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology
/ Miucci, A (Geneva U.) ; Gonella, L. (Bonn U.) ; Hemperek, T. (Bonn U.) ; Hügging, F. (Bonn U.) ; Krüger, H. (Bonn U.) ; Obermann, T. (Bonn U.) ; Wermes, N. (Bonn U.) ; Garcia-Sciveres, M. (LBL, Berkeley) ; Backhaus, M. (CERN) ; Capeans, M. (CERN) et al.
Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. [...]
AIDA-PUB-2014-017.-
Geneva : CERN, 2014
- Published in : JINST 9 (2014) C05064
Fulltext: PDF;
In : 15th International Workshop on Radiation Imaging Detectors, Paris, France, 23 - 27 Jun 2013, pp.C05064
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7.
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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9.
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A high-voltage pixel sensor for the ATLAS upgrade
/ Perić, Ivan (KIT, Karlsruhe) ; Prathapan, Mridula (KIT, Karlsruhe) ; Augustin, Heiko (Heidelberg U.) ; Benoit, Mathieu (U. Geneva (main)) ; Mohr, Raimon Casanova (Barcelona, IFAE) ; Dannheim, Dominik (CERN) ; Ehrler, Felix (KIT, Karlsruhe) ; Messaoud, Fadoua Guezzi (U. Geneva (main)) ; Kiehn, Moritz (U. Geneva (main)) ; Nürnberg, Andreas (KIT, Karlsruhe) et al.
High Voltage CMOS (HVCMOS) pixel sensors have been proposed for upgrade of the ATLAS experiment and for the tracking detectors at future colliders. They are implemented in commercial HVCMOS technologies, which makes the production cost effective when compared to hybrid pixel detectors. [...]
Elsevier, 2019 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 99-103
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.99-103
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10.
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Fulltext - Full text
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