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3D active edge silicon sensors: Device processing, yield and QA for the ATLAS-IBL production
/ Da Via, Cinzia (Manchester U.) ; Boscardil, Maurizio (Fond. Bruno Kessler, Povo) ; Dalla Betta, GianFranco (INFN, Trento ; Trento U.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Giacomini, Gabriele (Fond. Bruno Kessler, Povo) ; Hansen, Thor-Erik (SINTEF, Oslo) ; Hasi, Jasmine (SLAC) ; Kok, Angela (SINTEF, Oslo) ; Micelli, Andrea (INFN, Udine ; Udine U.) ; Povoli, Marco (INFN, Trento ; Trento U.) et al.
3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification process to establish its maturity for a medium scale production for the construction of a pixel layer for vertex detection, the Insertable B-Layer (IBL) at the CERN-LHC ATLAS experiment. [...]
SLAC-REPRINT-2013-039.-
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 699 (2013) 18-21
In : The 8th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Taipei, Taiwan, 5 - 8 Dec 2011, pp.18-21
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Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade
/ La Rosa, Alessandro (CERN) ; Boscardin, M. (Fond. Bruno Kessler, Povo) ; Dalla Betta, G.-F. (Trento U. ; INFN, Trento) ; Darbo, G. (INFN, Genoa) ; Gemme, C. (INFN, Genoa) ; Pernegger, H. (CERN) ; Piemonte, C. (Fond. Bruno Kessler, Povo) ; Povoli, M. (Trento U. ; INFN, Trento) ; Ronchin, S. (Fond. Bruno Kessler, Povo) ; Zoboli, A. (Trento U. ; INFN, Trento) et al.
3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. [...]
arXiv:0910.3788; SLAC-PUB-14921.-
2009 - 8 p.
- Published in : PoS RD09 (2009) 032
Fulltext: arXiv:0910.3788 - PDF; RD09_032 - PDF; External links: Proceedings of Science Server; SLAC Document Server
In : 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 30 Sep - 2 Oct 2009, pp.032
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3D silicon pixel sensors: Recent test beam results
/ Hansson, P (SLAC) ; Gjersdal, H (Oslo U.) ; Sandaker, H (Bergen U.) ; Korolkov, I (Barcelona, IFAE) ; Barrera, C (Barcelona, Inst. Microelectron.) ; Wermes, N (Bonn U.) ; Borri, M (Turin U.) ; Grinstein, S (Barcelona, IFAE) ; Troyano, I (Barcelona, IFAE) ; Grenier, P (SLAC) et al.
The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 628 (2011) 216-220
In : 12th Vienna Conference on Instrumentation, Vienna, Austria, 15 - 20 Feb 2010, pp.216-220
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Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors
/ Bubna, M. (Purdue U.) ; Bortoletto, D. (Purdue U.) ; Alagoz, E. (Purdue U.) ; Krzywda, A. (Purdue U.) ; Arndt, K. (Purdue U.) ; Shipsey, I. (Purdue U.) ; Bolla, G. (Purdue U.) ; Hinton, N. (Purdue U.) ; Kok, A. (SINTEF, Oslo) ; Hansen, T.-E. (SINTEF, Oslo) et al.
The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. [...]
arXiv:1402.6384.-
2014 - 10 p.
- Published in : JINST 9 (2014) C07019
Fulltext: PDF; External link: Preprint
In : 14th Topical Seminar on Innovative Particle and Radiation Detectors , Siena, Italy, 3 - 6 Oct 2016, pp.C07019
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Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector
/ Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; Baselga, M. (Barcelona, Inst. Microelectron.) ; Boscardin, M. (Fond. Bruno Kessler, Povo) ; Christophersen, M. (Naval Research Lab, Wash., D.C.) ; Da Via, C. (Manchester U.) ; Dalla Betta, G.-F. (INFN, Trento ; Trento U.) ; Darbo, G. (INFN, Genoa) ; Fadeyev, V. (UC, Santa Cruz) ; Fleta, C. (Barcelona, Inst. Microelectron.) ; Gemme, C. (INFN, Trento ; Trento U.) et al.
Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). [...]
arXiv:1302.5292.-
2013 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 730 (2013) 28-32
Fulltext: PDF; External link: Preprint
In : 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italie, 9 - 12 Oct 2012, pp.28-32
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Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip
/ ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.-
2012 - 45 p.
- Published in : JINST 7 (2012) P11010
Fulltext: PDF; External link: Preprint
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Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK
/ La Rosa, A. (CERN) ; Boscardin, M. (Fond. Bruno Kessler, Povo) ; Cobal, M. (Udine U. ; INFN, Udine) ; Dalla Betta, G.F. (INFN, Trento ; Trento U.) ; Da Via, C. (Manchester U.) ; Darbo, G. (INFN, Genoa) ; Gallrapp, C. (CERN) ; Gemme, C. (INFN, Genoa) ; Huegging, F. (Bonn U.) ; Janssen, J. (Bonn U.) et al.
In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. [...]
arXiv:1112.2854.-
2012 - 11 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 681 (2012) 25-33
Fulltext: PDF; External link: Preprint
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3D Pixels: Recent results
/ Rohne, O (Oslo U.) ; Bolle, E (Oslo U.) ; Borri, M (Turin U.) ; Boscardin, M (Fond. Bruno Kessler, Povo) ; Dalla Betta, G F (Trento U. ; INFN, Trento) ; Darbo, G (INFN, Genoa) ; Da Via, C (Manchester U.) ; Dorholt, O (Oslo U.) ; Fazio, S (Calabria U.) ; Gemme, C (INFN, Genoa) et al.
2009 - 9 p.
- Published in : PoS VERTEX2009 (2009) 016
External link: Published version from PoS
In : 18th International Workshop on Vertex Detectors and related techniques, Veluwe, Netherlands, 13 - 18 Sep 2009, pp.016
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