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Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN / IS634 Collaboration
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of $^{27}$Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. [...]
2021 - 10 p. - Published in : Advanced Electronic Materials 7 (2021) 2100345 Submitted version, due to embargo period until 19.6.2022: PDF; Supporting Information: PDF;

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