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A Novel Method for Transverse Beam-Coupling Impedance Measurements in Particle Accelerator Devices Using the Bead-Pull Method / Antuono, Chiara (U. Rome La Sapienza (main) ; CERN) ; Sito, Leonardo (CERN ; Naples U.) ; Calzone, Eleonora (U. Rome La Sapienza (main) ; CERN) ; el Dali, D (CERN) ; Migliorati, Mauro (CERN ; U. Rome La Sapienza (main)) ; Mostacci, Andrea (CERN ; U. Rome La Sapienza (main)) ; Fienga, Francesco (CERN ; Naples U.) ; Marrazzo, Vincenzo Romano (CERN ; Naples U.) ; Breglio, Giovanni (CERN ; Naples U.) ; Rumolo, G (CERN) et al.
In high-energy particle accelerators, circulating particle beams with high intensity interact electromagnetically with their surroundings (i.e., metallic vacuum chambers of various geometries). These electromagnetic interactions, which are typically described through the concept of beam-coupling impedance, can represent a serious issue in terms of stability of the particle beam and heating on the accelerator structures. [...]
2024 - 9 p. - Published in : IEEE Trans. Instrum. Meas. 73 (2024) 8005209 Fulltext: PDF;

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Proto-DUNE NP04 Horizontal Drift Shift control and Purity Monitor using Bi-207 / Raut, Rohit (University of Texas at Arlington (US))
The Deep Underground Neutrino Experiment (DUNE) is a flagship neutrino physics experiment aimed at probing the fundamental properties of neutrinos, some of the universe’s most elusive particles. [...]
CERN-STUDENTS-Note-2024-225. - 2024
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A Radiation-Tolerant 25.6-Gb/s High-Speed Transmitter in 28-nm CMOS With a Tolerance of 1 Grad / Klekotko, A (CERN ; Leuven U.) ; Biereigel, S (CERN) ; Baszczyk, M (CERN) ; Moreira, P (CERN) ; Martina, F (CERN) ; Prinzie, J (Leuven U.) ; Kulis, S (Leuven U.)
This article presents a 25.6-Gbit $\cdot $ s−1 high-speed transmitter (HST) manufactured using 28-nm CMOS technology. The HST macroblock includes an all-digital phase-locked loop (ADPLL), duty cycle corrector (DCC) circuit, data pattern generator, serializer, and a driver capable of driving the differential 100- $\Omega $ line as well as a silicon photonics (SiPh) ring modulator (RM). [...]
2024 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 2124-2132 Fulltext: PDF;

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Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation / Adom-Bamfi, Gideon (Leuven U.) ; Biereigel, Stefan (CERN) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in LC-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. [...]
2024 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 1380-1390

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Alignment of a Solenoid System by Means of a Translating-Coil Magnetometer / Pentella, Mariano (CERN) ; Kjellqvist, Ville Mattias Mattsson (CERN) ; Petrone, Carlo (CERN) ; Russenschuck, Stephan (CERN) ; von Freeden, L (CERN)
The electron cooler operating at the Antiproton Decelerator (AD) at CERN is at the end of its life cycle. The electron cooler, operated for over 40 years, has been used to decelerate anti-proton beams having an energy of about 5.3 MeV. [...]
2024 - 4 p. - Published in : IEEE Trans. Appl. Supercond. 34 (2024) 9001404 Fulltext: PDF;

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Exploring Radiation-Induced Vulnerabilities in RFICs Through Traditional RF Metrics / Scialdone, Antonio (CERN ; LIRMM, Montpellier ; Montpellier U. ; CNRS, France) ; Ferraro, Rudy (cern) ; Dilillo, Luigi (LIRMM, Montpellier ; Montpellier U. ; CNRS, France) ; Saigne, Frederic (Montpellier U. ; CNRS, France) ; Boch, Jérôme (CNRS, France ; Montpellier U.) ; Masi, Alessandro (CERN) ; Danzeca, Salvatore (CERN)
This article describes how to analyze radiation-induced effects using traditional radio-frequency (RF) metrics in RF integrated circuits (RFICs) to be used in the implementation of software-defined radios (SDRs). The impacts of total ionizing dose (TID) and single-event effects (SEEs) on the device characteristics are shown and their consequences for an SDR are discussed. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
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In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.2068-2075

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Transition energies of antiprotonic atoms / Nikolajevs, Antons
One of the proposed experiments at AEgIS concerns the spectroscopic study of antiproton bound system of medium and heavy nuclei. [...]
CERN-STUDENTS-Note-2023-154. - 2023
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EMC concepts applied to the switching mode power converters supplying the superconductive magnets for the CERN LHC accelerator / Thurel, Yves (CERN) ; Bordy, Frédérick (CERN) ; Charoy, Alain (EMC Expert AEMC, Seyssins)
The LHC (Large Hadron Collider) particle accelerator makes extensive use of switching mode power supplies, in charge of delivering a high precision regulated output current to superconductive magnets controlling and driving the high energy beam of particles. Obtaining such level of precision was achieved through a given approach regarding the architecture of the converter, which was split into three fundamental elements. [...]
2019 - 6 p. - Published in : 10.1109/EMCEurope.2019.8872076
In : 2019 IEEE International Symposium on Electromagnetic Compatibility (EMC EUROPE 2019), Barcelona, Spain, 2 - 6 Sep 2019, pp.796-801

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Some Compelling Overview of Charged Particle Multplicity Distribution in pp Collisions at the LHC / Aggarwal, Ritu (Pune U.) ; Kaur, Manjit (Panjab U.)
In this paper we report the oscillatory behavior observed in the modified combinants when Shifted-Gompertz distribution is used to define the phenomenology of the multi-particle production for the pp collisions. These oscillatory behavior in the modified combinants $C_j$, were first reported using the modified NBD. [...]
2020 - 7 p. - Published in : Springer Proc. Phys. 248 (2020) 205-211
In : International Workshop on Frontiers in High Energy Physics, Hyderabad, India, 14 - 17 Oct 2019, pp.205-211

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10.

Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses / Bonaldo, Stefano (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Jin, Xiaoming (Northwest Inst. Nucl. Tech., Xian) ; Paccagnella, Alessandro (U. Padua (main)) ; Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main))
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed at high temperature under different bias conditions. The experimental results demonstrate the high sensitivity of pMOSFETs to radiation-induced short-channel effects, related to the buildup of defects in spacer dielectrics. [...]
2019 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1574-1583
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1574-1583

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