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Eleventh International Workshop on Semiconductor Pixel Detectors for Particles and Imaging - Pixel 2024
18 - 22 Nov 2024
- Strasbourg, Grand Est, Fr
/ Arbor, N (ed.) (Université de Strasbourg); Andrea, J (ed.) (Université de Strasbourg); Besson, A (ed.) (Université de Strasbourg); Baudot, J (ed.) (Université de Strasbourg); Colledani, C (ed.) (Université de Strasbourg); Chabert, E (ed.) (Université de Strasbourg); El Bitar, Z (ed.) (Université de Strasbourg); Finck, C (ed.) (Université de Strasbourg); Hu-Guo, C (ed.) (Université de Strasbourg); Kachel, M (ed.) (Université de Strasbourg) et al.
2024
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CEPC Technical Design Report: Accelerator
/ CEPC Study Group Collaboration
The Circular Electron Positron Collider (CEPC) is a large scientific project initiated and hosted by China, fostered through extensive collaboration with international partners. The complex comprises four accelerators: a 30 GeV Linac, a 1.1 GeV Damping Ring, a Booster capable of achieving energies up to 180 GeV, and a Collider operating at varying energy modes (Z, W, H, and ttbar). [...]
arXiv:2312.14363; IHEP-CEPC-DR-2023-01; IHEP-AC-2023-01.-
2024-06-03 - 1106 p.
- Published in : Radiat. Detect. Technol. Methods 8 (2024) 1-1105
Fulltext: 2312.14363 - PDF; Publication - PDF;
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
/ Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.
In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213
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