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CERN Document Server 找到 8 笔记录  检索需时 0.64 秒. 
1.
Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator / Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO$_{2}$) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p. - Published in : JINST 19 (2024) C03039 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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2.
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;
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3.
Annual Report 2023 and Phase-I Closeout / Aglieri Rinella, Gianluca
This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023..
CERN-EP-RDET-2024-001 - 208.

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4.
Annual Report 2022 / Aglieri, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2022
CERN-EP-RDET-2023-002 - 100.

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5.
Extension of the R&D Programme on Technologies for Future Experiments / Joram, Christian
we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e [...]
CERN-EP-RDET-2023-001 -

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6.
Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2021 / Aglieri Rinella, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2021..
CERN-EP-RDET-2022-006 - 126.


10.17181/CERN-EP-RDET-2022-006
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7.
Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors / Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Termo, Gennaro (CERN) ; Michelis, Stefano (CERN) ; Costanzo, Sebastiano (CERN) ; Koch, Henri D (CERN) ; Fleetwood, Daniel M (Vanderbilt U.)
MOS transistors in 65-nm CMOS technology exposed to ultrahigh total ionizing dose (TID) levels show clear evidence of a true dose-rate (DR) dependence. In order to assess the impact of this effect and to understand its origin, an extensive measurement campaign has been carried out at different DRs, different temperatures, and different biases. [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 573-580
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8.
Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2020 / Aglieri, Gianluca
This report summarises the activities and achievements of the strategic R&D programme on technologies for future experiments in the year 2020..
CERN-EP-RDET-2021-001 - 2020. - 68.


10.17181/CERN-EP-RDET-2021-001
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