CERN Accelerating science

CERN Document Server 8 záznamov nájdených  Hľadanie trvalo 0.89 sekúnd. 
1.
lpGBT: Low-Power Radiation-Hard Multipurpose High-Speed Transceiver ASIC for High-Energy Physics Experiments / Moreira, Paulo (CERN) ; Kulis, Szymon (CERN) ; Baron, Sophie (CERN) ; Biereigel, Stefan (CERN) ; Mendes, Eduardo Brandao De Souza (CERN) ; Matos-Carvalho, João P (New Lisbon U.) ; Faes, Bram (Leuven U.) ; Firlej, Miroslaw (AGH-UST, Cracow) ; Fiutowski, Tomasz (AGH-UST, Cracow) ; Fonseca, Jose (CERN) et al.
Commissioning of detector systems for the high-luminosity large Hadron collider (HL-LHC) is scheduled to take place between 2026 and 2028 at CERN. Application-specific integrated circuits (ASICs) for those systems have been in intense development over the past ten years. [...]
2025 - 14 p. - Published in : IEEE Trans. Nucl. Sci. 72 (2025) 24-37 Fulltext: PDF;
2.
Book cover lpGBT documentation : release
12 Aug 2024. - 359 p.

3.
Book cover GBTX manual . - V0.18 draft / Moreira, P (ed.) ; Christiansen, J (ed.) ; Wyllie, K (ed.)
20 Jul 2021. - 225 p.

4.
Versatile Link+ Transceiver Production Readiness / Olantera, Lauri (CERN) ; Blanc, Jeremy (CERN) ; Detraz, Stephane (CERN) ; Fetzer, Anton (CERN) ; Kraxner, Andrea (CERN) ; Scarcella, Carmelo (CERN) ; Sigaud, Christophe (CERN) ; Soos, Csaba (CERN) ; Troska, Jan (CERN) ; Vasey, Francois (CERN) et al.
The Versatile Link + project is about to enter its production phase, ready for the Phase 2 HL-LHC detector upgrades. We present the status of the front-end part of the Versatile Link$^+$ project: the Versatile Link$^+$ Transceiver, which provides a low-mass, radiation tolerant, optical transmit- and receive module for tight integration in the upgrading HL-LHC detectors. [...]
SISSA, 2020 - 5 p. - Published in : PoS TWEPP2019 (2020) 055 Fulltext: PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.055
5.
A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology / Zeng, Zhiyao (Southern Methodist U. (main)) ; Sun, Kexu (Southern Methodist U. (main)) ; Wang, Guanhua (Southern Methodist U. (main)) ; Zhang, Tao (Southern Methodist U. (main)) ; Kulis, Szymon (CERN) ; Gui, Ping (Southern Methodist U. (main)) ; Moreira, Paulo (CERN)
This paper presents a compact low-power 4 × 10 Gb/s quad-driver module for vertical-cavity surface-emitting laser (VCSEL) arrays in a 65-nm CMOS technology. The side-by-side drivers can be directly wire bonded to the VCSEL diode array, supporting up to four channels. [...]
2017 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 1599-1604
6.
10-Gb/s Distributed Amplifier-Based VCSEL Driver IC With ESD Protection in 130-nm CMOS / Zhang, Tao (Southern Methodist U.) ; Gui, Ping (Southern Methodist U.) ; Chakraborty, Sudipto (Texas Instruments, Dallas) ; Liu, Tianwei (Southern Methodist U.) ; Wu, Guoying (Integrated Device Technology) ; Moreira, Paulo (CERN) ; Tavernier, Filip (IMEC, Leuven)
Abstract: This paper presents a low-power 10-Gb/s vertical cavity surface emitting laser (VCSEL) driver integrated circuit (IC) with electrostatic discharge (ESD) protection in the 130-nm CMOS technology. A distributed amplifier (DA)-based modulator is proposed to boost the driver bandwidth. [...]
2016 - 9 p. - Published in : IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 24 (2016) 2502-2510
7.
Single-event upsets in photoreceivers for Multi-Gb/s SLHC data transmission / Seif El Nasr-Storey, Sarah (CERN) ; Detraz, Stephane (CERN) ; Gui, Ping (Southern Methodist U.) ; Menouni, Mohsine (Marseille, CPPM) ; Moreira, Paulo (CERN) ; Papadopoulos, Spyridon (CERN) ; Sigaud, Christophe (CERN) ; Soos, Csaba (CERN) ; Stejskal, Pavel (CERN) ; Troska, Jan (CERN) et al.
A 63 MeV proton beam was used to perform a single event upset (SEU) test on a candidate component for a future high luminosity large hadron collider (HL-LHC) high speed optical. An in-lab error injector was used to show that 1-0 bit errors are caused by the amplifier's response to the large signal caused by a single event transient (SET) in the photodiode..
2011 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 58 (2011) 3111-3117 IEEE Published version, local copy: PDF;
In : 17th IEEE NPSS Real Time Conference, Lisbon, Portugal, 24 - 28 May 2010, pp.3111-3117
8.
Fully on-chip switched capacitor NMOS low dropout voltage regulator / Camacho, D (So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA.) ; Gui, Ping (So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA.) ; Camacho, Daniel (So Methodist Univ, Dept Elect Engn, Dallas, TX 75275 USA.) ; Moreira, Paulo (CERN)
This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. [...]
2010 - Published in : Analog Integr. Circuits Process. 65 (2010) 141-149

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