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CERN Document Server 2 записей найдено  Поиск длился 1.26 секунд. 
1.
Contactless doping characterization of ${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ using acceptor Cd probes / Barbosa, Marcelo B (Porto U. ; Singapore Natl. U.) ; Correia, João Guilherme (IST/ITN, Lisbon ; CERN) ; Lorenz, Katharina (Lisbon, IST) ; Lopes, Armandina M L (Porto U.) ; Oliveira, Gonçalo N P (Porto U.) ; Fenta, Abel S (CERN ; Aveiro U. ; Leuven U.) ; Schell, Juliana (CERN ; U. Duisburg-Essen) ; Teixeira, Ricardo (IST, Lisbon (main)) ; Nogales, Emilio (Madrid U.) ; Méndez, Bianchi (Madrid U.) et al.
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $\beta$-${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ could strongly influence and contribute to the development of the next generation of power electronics. In this work, we combine easily accessible ion implantation, diffusion and nuclear transmutation methods to properly incorporate the Cd dopant into the $\beta$-${\mathrm{Ga}_{2}\mathrm{O}_{3}}$ lattice, being subsequently characterized at the atomic scale with the Perturbed Angular Correlation (PAC) technique and Density Functional Theory (DFT) simulations. [...]
2022 - 9 p. - Published in : Sci. Rep. 12 (2022) 14584 Fulltext: PDF;
2.
Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations / Barbosa, M B (Porto U.) ; Gonçalves, J N (Aveiro U.) ; Redondo-Cubero, A (ITN, Sacavem ; Lisbon U., CFNUL) ; Miranda, S M C (ITN, Sacavem) ; Simon, R (Bonn U., HISKP) ; Kessler, P (Bonn U., HISKP) ; Brandt, M (Humboldt-U., Berlin) ; Henneberger, F (Humboldt-U., Berlin) ; Nogales, E (U. Complutense, Madrid) ; Méndez, B (U. Complutense, Madrid) et al.
The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\,$min.) and later compared to density functional theory simulations. [...]
CERN-OPEN-2014-017.- Porto : IFIMUP-In, 2013 - 8 p. - Published in : Phys. Status Solidi B 250 (2013) 801-808 Preprint: PDF;

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1 Nogales, Emilio
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