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CERN Document Server	Pronađeno je 8 zapisa	Pretraživanje je potrajalo 1.05 sekundi

Annual Report 2023 and Phase-I Closeout / Aglieri Rinella, Gianluca
This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023..
CERN-EP-RDET-2024-001 - 208.

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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation / Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Nitescu, A. ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai)
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. [...]
arXiv:2306.15336.- 2024-01-13 - 13 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1061 (2024) 169103 Fulltext: PDF;

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Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon / RD50 Collaboration
This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$\Omega\cdot$cm were irradiated with fluence values between \SI{1e15}{\per□\centi\meter} and \SI{6e15}{\per□\centi\meter} [...]
arXiv:2306.14736.- 2023-07-26 - 16 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168559 Fulltext: PDF;

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Annual Report 2022 / Aglieri, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2022
CERN-EP-RDET-2023-002 - 100.

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Extension of the R&D Programme on Technologies for Future Experiments / Joram, Christian
we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e [...]
CERN-EP-RDET-2023-001 -

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Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors / Himmerlich, Anja (CERN) ; Castello-Mor, Nuria (CERN) ; Rivera, Esteban Curras (CERN) ; Gurimskaya, Yana (CERN) ; Maulerova-Subert, Vendula (CERN ; Hamburg U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest U.) ; Fretwurst, Eckhart (Hamburg U.) ; Liao, Chuan (Hamburg U.) ; Schwandt, Jorn (Hamburg U.)
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. [...]
arXiv:2209.07186.- 2022-12-22 - Published in : Nucl. Instrum. Methods Phys. Res., A 1048 (2023) 167977 Fulltext: PDF;

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Strategic R&D Programme on Technologies for Future Experiments - Annual Report 2021 / Aglieri Rinella, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2021..
CERN-EP-RDET-2022-006 - 126.

10.17181/CERN-EP-RDET-2022-006

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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes / Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50- $\Omega $ cm material after irradiation with 23-GeV protons to a fluence of $6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$ [...]
2022 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586 External link: preprint

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Također vidi: slična imena autora
1	Himmerlich, A
4	Himmerlich, Anja

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