CERN Accelerating science

Article
Title New results on silicon microstrip detectors of CMS tracker
Author(s) Demaria, N ; Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U 顯示全部 112 名作者
Affiliation (CERN)
Publication 2000
Imprint 2000
In: Nucl. Instrum. Methods Phys. Res., A 447 (2000) 142-50
DOI 10.1016/S0168-9002(00)00182-0
Subject category Detectors and Experimental Techniques
Accelerator/Facility, Experiment CERN LHC ; CMS
Abstract Interstrip and backplane capacitances on silicon microstrip detectors with pf strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4*10/sup 14/ protons/cm/sup 2/ of 24 GeV/e momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a (100) substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p/sup +/ implant has been studied and found to enhance the stability. (7 refs).

Corresponding record in: Inspire


 記錄創建於2000-07-31,最後更新在2016-06-30



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