| ATLAS Slides | |
| Report number | ATL-ITK-SLIDE-2025-025 |
| Title | Defect investigation in irradiated ATLAS18 ITk Strip Sensors using transient spectroscopy techniques |
| Author(s) |
Klein, Christoph Thomas (Carleton University (CA)) ; Cindro, Vladimir (Jozef Stefan Institute (SI)) ; Dandoy, Jeff (Carleton University (CA)) ; Fadeyev, Vitaliy (University of California,Santa Cruz (US)) ; Federicova, Pavla (Czech Academy of Sciences (CZ)) ; Jessiman, Callan Egyed (Carleton University (CA)) ; Keller, John Stakely (Carleton University (CA)) ; Koffas, Thomas (Carleton University (CA)) ; Kroll, Jiri (Czech Academy of Sciences (CZ)) ; Kvasnicka, Jiri (Czech Academy of Sciences (CZ)) ; Mandic, Igor (Jozef Stefan Institute (SI)) ; Mikestikova, Marcela (Czech Academy of Sciences (CZ)) ; Staats, Ezekiel (Carleton University (CA)) ; Ullan, Miguel (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Unno, Yoshinobu (KEK High Energy Accelerator Research Organization (JP)) ; Zhao, Yuzhan (Carleton University (CA)) |
| Corporate author(s) | The ATLAS collaboration |
| Submitted by | [email protected] on 05 Mar 2025 |
| Subject category | Particle Physics - Experiment |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Free keywords | ITk Strip Sensors |
| Abstract | With the upgrade of the LHC to the High-Luminosity LHC (HL-LHC), the Inner Detector will be replaced with the new all-silicon ATLAS Inner Tracker (ITk). Comprising an active area of 165m$^2$, the outer detector layers will host strip modules, built with single-sided micro-strip sensors. The ATLAS18 main sensors were tested at different institutes in the collaboration for mechanical and electrical compliance with technical specifications, while technological parameters were verified on test structures from the same wafers before and after irradiation. Diodes fabricated as test structures were studied using variants of Deep-Level Transient Spectroscopy (DLTS). Irradiated diode samples were measured with Current-DLTS, using both electrical and photo-induced injection. Utilising DLTS spectra with varying test parameters, trap energy levels and cross-sections associated with defects were obtained. This was done to improve the precision of sensor simulations as well as to compile a more complete model of radiation damage in ITk Strip Sensors. Moreover, previously observed features such as an increasing trend in the full depletion voltage after irradiation and little beneficial annealing in charge collection after high fluence irradiation of high energy protons were also investigated. This talk will present a summary of the defect parameters observed in the samples and will compare results obtained for samples with radiation damage from different sources at various fluences. |
Journalen skapades 2025-03-05, och modifierades senast 2025-03-05
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