Abstract
| From previous $^{57}$Fe/$^{57}$Mn eMS studies on epitaxial layers of Mn doped AlGaN, GaN and InGaN at ISOLDE, a wealth of information has been obtained on the charge state and interactions of Fe with dopants (experiments IS630 and IS576). Here we want to make use of the renewed interest in Fe and Mn co-doped GaN, (Ga,Fe)N:Mn where the formation or suppression of iron nitride precipitates can be controlled with appropriate doping/annealing thereby tuning between a dilute magnetic semiconductor and a condensed magnetic semiconductor. Using the knowledge obtained from previous eMS studies, we will follow the state of implanted Mn/Fe to predict the effects of doping on the charge/spin state of the probe atoms and the mechanism leading to precipitation and/or suppression of precipitation. |