| Pagina principale > A 60 μW front-end for 10 ps resolution monolithic pixel sensors in a 130nm SiGe BiCMOS process |
| Article | |
| Title | A 60 μW front-end for 10 ps resolution monolithic pixel sensors in a 130nm SiGe BiCMOS process |
| Author(s) | Picardi, Antonio (CERN ; Geneva U.) ; Cardella, Roberto (Geneva U.) ; Iacobucci, Giuseppe (Geneva U.) ; Kugathasan, Thanushan (Geneva U.) ; Paolozzi, Lorenzo (Geneva U.) |
| Publication | 2023 |
| Number of pages | 4 |
| In: | 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME 2023), Valencia, Spain, 18 -21 Jun 2023, pp.85-88 |
| DOI | 10.1109/PRIME58259.2023.10161762 |
| Abstract | This paper presents the development and optimization of a front-end circuit and the design of a monolithic sensor demonstrator with a high spatial resolution (hexagonal pixels with 50 μ m pitch) and sub-10 picosecond timing capability for the detection of ionizing radiation. The system combines a monolithic sensor in a SiGe BiCMOS process with a front-end architecture based on a SiGe Heterojunction Bipolar Transistor (HBT). The design of the prototype has been optimized to achieve improved timing performance while maintaining low power consumption by analyzing the trade-off between sensor input capacitance and power consumption. The goal is to achieve a timing resolution below 10 ps, a significant improvement over the previous prototype, which demonstrated a time resolution of 20 ps. This prototype has been developed in the framework of the MONOLITH H2020 ERC project. |
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