CERN Accélérateur de science

Article
Title Pulsed Electron Beam induced SEU Effects in a SRAM memory
Author(s) Wyrwoll, Vanessa (CERN ; Oslo U.) ; Røed, Ketil (Oslo U.) ; Alía, Rubén García (CERN) ; Delfs, Björn (Oldenburg U.) ; Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Farabolini, Wilfrid (CERN ; Saclay) ; Gilardi, Antonio (CERN ; U. Naples (main) ; LBNL, Berkeley ; INFN, Naples) ; Corsini, Roberto (CERN)
Publication 2021
Number of pages 7
In: Conference on Radiation and its Effects on Components and Systems (RADECS 2021), Vienna, Austria, 13 - 17 Sep 2021, pp.1-7
DOI 10.1109/RADECS53308.2021.9954561
Subject category Detectors and Experimental Techniques
Accelerator/Facility, Experiment CLEAR
Abstract Single Event Effects (SEEs) correlated to pulsed beam effects induced by high energy electrons in a very well-established device, such as the ESA SEU (Singe Event Upset) monitor, are investigated in this paper. Measurements with different electron intensities have been performed at VESPER (The Very energetic Electron facility for Space Planetary Exploration missions in harsh Radiative environments) at the CERN Linear Electron Accelerator for Research (CLEAR) focused on very high dose rates per pulse. The possible contribution of electron nuclear events and flash effects is discussed.
Copyright/License © 2021-2025 IEEE

Corresponding record in: Inspire


 Notice créée le 2023-01-17, modifiée le 2023-01-18