CERN Accelerating science

ATLAS Note
Report number	ATL-ITK-PROC-2022-029
Title	Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip Detector
Author(s)	Gutierrez Zagazeta, Luis Felipe (University of Pennsylvania (US)) ; Capocasa, Francesca (Brandeis University (US)) ; Fielitz, William Guenter (Brookhaven National Laboratory (US)) ; Kierstead, James (Brookhaven National Laboratory (US)) ; Lynn, David (Brookhaven National Laboratory (US)) ; Musso, Christopher David (Brookhaven National Laboratory (US)) ; Stucci, Stefania Antonia (Brookhaven National Laboratory (US))
Corporate Author(s)	The ATLAS collaboration
Collaboration	ATLAS Collaboration
Publication	2023
Imprint	19 Oct 2022
Number of pages	5
In:	JINST 18 (2023) C04006
In:	Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C04006
DOI	10.1088/1748-0221/18/04/C04006
Subject category	Particle Physics - Experiment
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Free keywords	FUTURE
Abstract	The ITk Strip is a silicon-strip charged-particle detector that is going to be installed in the ATLAS experiment for the HL-LHC. GaNFETs are radiation-tolerant transistors that permit switching off high voltage to malfunctioning sensors. To ensure the reliability of the GaNFETs in the high radiation environment expected for the ITk Strip, a sample of the transistors were exposed to gamma radiation. The GaNFETs were characterized pre- and post-irradiation, and their state was monitored during irradiation.

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