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Article
Report number	arXiv:2204.10569
Title	Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
Author(s)	Dort, Katharina (CERN) ; Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) ; Munker, Magdalena (U. Geneva (main)) ; Snoeys, Walter (CERN) ; Spannagel, Simon (DESY) ; Švihra, Peter (CERN) ; Vanat, Tomas (DESY)
Publication	2022-10-11
Imprint	2022-04-22
Number of pages	11
In:	Nucl. Instrum. Methods Phys. Res., A 1041 (2022) 167413
DOI	10.1016/j.nima.2022.167413 (publication)
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Abstract	Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.
Copyright/License	publication: © 2022-2024 The Author(s) (License: CC-BY-4.0) preprint: (License: CC BY 4.0)

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