CERN Accelerating science

CMS Note
Report number	CMS-CR-2019-169
Title	Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC
Author(s)	Ceccarelli, Rudy (INFN, Florence ; Florence U.) ; Zuolo, Davide (INFN, Milan Bicocca ; Milan Bicocca U.) ; Meschini, Marco (INFN, Florence) ; Viliani, Lorenzo (Florence U. ; INFN, Florence) ; Dinardo, Mauro (INFN, Milan Bicocca ; Milan Bicocca U.) ; Gennai, Simone (CERN ; INFN, Pisa) ; Menasce, Dario (INFN, Milan Bicocca) ; Moroni, Luigi (INFN, Milan Bicocca ; Milan Bicocca U.) ; Demaria, Lino (INFN, Turin) ; Monteil, Ennio (INFN, Turin ; Turin U.) ; Gaioni, Luigi (Bergamo U. ; INFN, Pavia) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Curras, Esteban (Cantabria Inst. of Phys.) ; Duarte, Jordi (Cantabria Inst. of Phys.) ; Fernandez, Marco (Cantabria Inst. of Phys.) ; Gomez, Gervasio (Cantabria Inst. of Phys.) ; Garcia, Andrea (Cantabria Inst. of Phys.) ; Gonzalez, Javier (Uppsala U. (main)) ; Silva, Esther (Cantabria Inst. of Phys.) ; Vila, Ivan (Cantabria U., Santander) ; Mendicino, Roberto (Trento U. ; INFN, Trento) ; Boscardin, Maurizio (Fond. Bruno Kessler, Trento) ; Dalla Betta, Gian Franco (INFN, Trento ; Trento U.)
Publication	SISSA, 2020
Imprint	03 Oct 2019
Number of pages	6
In:	PoS EPS-HEP2019 (2020) 117
In:	European Physical Society Conference on High Energy Physics (EPS-HEP) 2019, Ghent, Belgium, 10 - 17 Jul 2019, pp.117
DOI	10.22323/1.364.0117
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Abstract	The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few $10^{16}  \rm{n_{eq}/cm^2}$ at $\sim 3 \, \rm{cm} $ from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100\,$\mu {\rm m}$ and 130\,$\mu {\rm m}$ active thickness for planar sensors, and 130\,$\mu {\rm m}$ for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules, bump-bonded to the RD53A readout chip, have been tested on beam. First results on their performance before and after irradiation are presented. \footnote{Published in Proceedings of Science as PoS(EPS-HEP2019)117, DOI: 10.22323/1.364.0117}
Copyright/License	© The Authors (License: CC-BY-NC-ND-4.0)

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