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Title Study of CMOS strip sensor for future silicon tracker
Author(s) Han, Y (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Zhu, H (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) ; Caragiulo, P (SLAC) ; Chen, Y (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Das, D (Rutherford) ; Doering, D (SLAC) ; Dopke, J (Rutherford) ; Dragone, A (SLAC) ; Ehrler, F (KIT, Karlsruhe) ; Fadeyev, V (UC, Santa Cruz) ; Fedorko, W (British Columbia U.) ; Galloway, Z (UC, Santa Cruz) ; Gay, C (British Columbia U.) ; Grabas, H (UC, Santa Cruz) ; Gregor, I M (DESY) ; Grenier, P (SLAC) ; Grillo, A (UC, Santa Cruz) ; Hiti, B (Stefan Inst., Ljubljana) ; Hoeferkamp, M (New Mexico U.) ; Hommels, L B A (Cambridge U.) ; Huffman, T (Oxford U.) ; John, J (Oxford U.) ; Kanisauskas, K (Oxford U. ; Glasgow U.) ; Kenney, C (SLAC) ; Kramberger, G (Stefan Inst., Ljubljana) ; Liu, P (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Lu, W (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Liang, Z (Beijing, Inst. High Energy Phys.) ; Mandić, I (Stefan Inst., Ljubljana) ; Maneuski, D (Glasgow U.) ; Martinez-Mckinney, F (UC, Santa Cruz) ; McMahon, S (Oxford U. ; Rutherford) ; Meng, L (U. Liverpool (main) ; Geneva U.) ; Mikuz̆, M (Stefan Inst., Ljubljana ; Ljubljana U.) ; Muenstermann, D (Lancaster U.) ; Nickerson, R (Oxford U.) ; Peric, I (KIT, Karlsruhe) ; Phillips, P (Oxford U. ; Rutherford) ; Plackett, R (Oxford U.) ; Rubbo, F (SLAC) ; Ruckman, L (SLAC) ; Segal, J (SLAC) ; Seidel, S (New Mexico U.) ; Seiden, A (UC, Santa Cruz) ; Shipsey, I (Oxford U.) ; Song, W (Beijing, Inst. High Energy Phys.) ; Stanitzki, M (DESY) ; Su, D (SLAC) ; Tamma, C (SLAC) ; Turchetta, R (Rutherford) ; Vigani, L (Oxford U.) ; Volk, J (UC, Santa Cruz) ; Wang, R (Argonne (main)) ; Warren, M (University Coll. London) ; Wilson, F (Rutherford) ; Worm, S (Rutherford) ; Xiu, Q (Beijing, Inst. High Energy Phys.) ; Zhang, J (Argonne (main))
Publication 2020
Number of pages 6
In: Nucl. Instrum. Methods Phys. Res., A 981 (2020) 164520
In: 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164520
DOI 10.1016/j.nima.2020.164520
Subject category Detectors and Experimental Techniques
Abstract Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments.
Copyright/License © 2020 Elsevier B.V.

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