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Title	Investigation of nitrogen enriched silicon for particle detectors
Author(s)	Hönig, J C (Freiburg U.) ; Baselga, M (DESY) ; Vignali, M Centis (CERN) ; Diehl, L (Freiburg U.) ; Dierlamm, A (Karlsruhe U.) ; Fretwurst, E (Hamburg U.) ; Kaminski, P (Warsaw, Inst. Electron. Mat. Tech.) ; Moll, M (CERN) ; Moos, F (Freiburg U.) ; Mori, R (Freiburg U.) ; Parzefall, U (Freiburg U.) ; Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Schwandt, J (Hamburg U.) ; Wiik-Fuchs, L (Freiburg U.)
Publication	2020
Number of pages	13
In:	JINST 15 (2020) P05006
DOI	10.1088/1748-0221/15/05/P05006
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN PS
Abstract	This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. The article features comparative studies using secondary ion mass spectrometry, electrical characterization, edge transient current technique, source and thermally stimulated current spectroscopy measurements on sensors that were irradiated up to a fluence of 1015 neq/cm2. Irradiations were performed with 23 MeV protons at the facilities in Karlsruhe (KIT), with 24 GeV/c protons at CERN (PS-IRRAD) and neutrons at the research reactor in Ljubljana. Secondary ion mass spectrometry measurements give evidence for nitrogen loss after processing, which makes gaining from nitrogen enrichment difficult.
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