| Thesis | |
| Report number | CERN-THESIS-2019-221 |
| Title | Design of radiation-hard CMOS sensors for particle detection applications |
| Related title | Projektiranje CMOS senzora otpornih na zračenje za primjenu u detekciji čestica |
| Author(s) | Berdalovic, Ivan (Zagreb U.) |
| Publication | 120. |
| Thesis note | PhD : Zagreb U. : 2019 |
| Thesis supervisor(s) | Suligoj, Tomislav |
| Note | Presented 29 Oct 2019 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Abstract | The work focuses on the design of large-scale radiation-hard monolithic CMOS sensors for the upgrades of the detectors in the high-energy physics experiments at CERN. The sensors are manufactured using a novel process modification implemented in the TowerJazz 180 nm CMOS process, which uses small collection electrodes to achieve a low sensor capacitance in the order of a few femtofarads, resulting in low noise and low analogue power consumption. The process modification provides full depletion of the sensitive layer and a radiation hardness promising to meet the requirements of the pixel detectors in CERN’s largest experiments. The sensors implement a matrix of small pixels (in the order of 30 micrometres) containing a fast, low-noise front-end amplifier and a novel asynchronous digital readout architecture. Measurement results from these sensors before and after irradiation are also discussed. |
Email contact: [email protected]
記錄創建於2019-11-27，最後更新在2019-12-12
