| Published Articles | |
| Report number | AIDA-2020-PUB-2019-004 |
| Title | Characterization Results of a HVCMOS Sensor for ATLAS |
| Author(s) | Ehrler, F. (KIT) ; Benoit, M. (UNIGE) ; Dannheim, D. (CERN) ; Kiehn, M. (UNIGE) ; Nurnberg, A. (KIT, CERN) ; Peric, I. (KIT) ; Prathapan, M. (KIT) ; Schimassek, R. (KIT) ; Vanat, T. (UNIGE) ; Vicente, M. (UNIGE) ; Weber, A. (KIT, UHEI) ; Zhang, H. (KIT) |
| Publication | 2019 |
| Imprint | 2018-07-30 |
| In: | Nucl. Instrum. Methods Phys. Res., A 936 (2019) 654-656 |
| In: | Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.654-656 |
| DOI | 10.1016/j.nima.2018.08.069 |
| Subject category | Detectors and Experimental Techniques ; 6: Novel high voltage and resistive CMOS sensors |
| Abstract | High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation, HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate. |
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记录创建於2019-02-12，最後更新在2020-03-30
