Author(s)
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Zhao, Y. (UC, Santa Cruz, Inst. Part. Phys.) ; Cartiglia, N. (UC, Santa Cruz, Inst. Part. Phys.) ; Estrada, E. (UC, Santa Cruz, Inst. Part. Phys.) ; Galloway, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Gee, C. (UC, Santa Cruz, Inst. Part. Phys.) ; Goto, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Luce, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Mazza, S.M. (UC, Santa Cruz, Inst. Part. Phys.) ; Mckinney-Martinez, F. (UC, Santa Cruz, Inst. Part. Phys.) ; Rodriguez, R. (UC, Santa Cruz, Inst. Part. Phys.) ; Sadrozinski, H.F.-W. (UC, Santa Cruz, Inst. Part. Phys.) ; Seiden, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Cindro, V. (Ljubljana U.) ; Kramberger, G. (Ljubljana U.) ; Mandić, I. (Ljubljana U.) ; Mikuž, M. (Ljubljana U.) ; Zavrtanik, M. (Ljubljana U.) |
Abstract
| We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {\mu}m thick UFSD in timing accuracy, bias voltage and power can be established. |