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Title	High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal
Author(s)	Scandale, W (CERN ; Orsay, LAL ; INFN, Rome) ; Arduini, G (CERN) ; Butcher, M (CERN) ; Cerutti, F (CERN) ; Garattini, M (CERN) ; Gilardoni, S (CERN) ; Lechner, A (CERN) ; Masi, A (CERN) ; Mirarchi, D (CERN) ; Montesano, S (CERN) ; Redaelli, S (CERN) ; Rossi, R (CERN ; INFN, Rome) ; Smirnov, G (CERN) ; Breton, D (Orsay, LAL) ; Burmistrov, L (Orsay, LAL) ; Chaumat, V (Orsay, LAL) ; Dubos, S (Orsay, LAL) ; Maalmi, J (Orsay, LAL) ; Puill, V (Orsay, LAL) ; Stocchi, A (Orsay, LAL) ; Bagli, E (Ferrara U. ; INFN, Ferrara) ; Bandiera, L (Ferrara U. ; INFN, Ferrara) ; Germogli, G (Ferrara U. ; INFN, Ferrara) ; Guidi, V (Ferrara U. ; INFN, Ferrara) ; Mazzolari, A (Ferrara U. ; INFN, Ferrara) ; Dabagov, S (LNF, Dafne Light) ; Murtas, F (LNF, Dafne Light) ; Addesa, F (CERN ; INFN, Rome) ; Cavoto, G (INFN, Rome) ; Iacoangeli, F (INFN, Rome) ; Galluccio, F (INFN, Naples) ; Afonin, A G (Serpukhov, IHEP) ; Chesnokov, Yu A (Serpukhov, IHEP) ; Durum, A A (Serpukhov, IHEP) ; Maisheev, V A (Serpukhov, IHEP) ; Sandomirskiy, Yu E (Serpukhov, IHEP) ; Yanovich, A A (Serpukhov, IHEP) ; Kovalenko, A D (Dubna, JINR) ; Taratin, A M (Dubna, JINR) ; Denisov, A S (St. Petersburg, INP) ; Gavrikov, Yu A (St. Petersburg, INP) ; Ivanov, Yu M (St. Petersburg, INP) ; Lapina, L P (St. Petersburg, INP) ; Malyarenko, L G (St. Petersburg, INP) ; Skorobogatov, V V (St. Petersburg, INP) ; James, T (Imperial Coll., London) ; Hall, G (Imperial Coll., London) ; Pesaresi, M (Imperial Coll., London) ; Raymond, M (Imperial Coll., London)
Publication	2016
Number of pages	6
In:	Phys. Lett. B 760 (2016) 826-831
DOI	10.1016/j.physletb.2016.07.072
Subject category	Accelerators and Storage Rings
Abstract	A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10% of its amorphous level whereas in channeling along the (110) planes it is about 25% . High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.
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