| Article | |
| Report number | CERN-OPEN-2017-005 |
| Title | Lattice location of Mg in GaN: a fresh look at doping limitations |
| Author(s) |
Wahl, Ulrich (Lisbon, IST) ; Amorim, Lígia (Leuven U.) ; Augustyns, Valerie (Leuven U.) ; Granadeiro Costa, Angelo Rafael (Lisbon, IST) ; David Bosne, Eric (Lisbon, IST) ; De Lemos Lima, Tiago Abel (Leuven U.) ; Lippertz, Gertjan (Leuven U.) ; Martins Correia, Joao (Lisbon, IST) ; Castro Ribeiro Da Silva, Manuel (Lisbon U.) ; Kappers, Menno (Cambridge U.) ; Temst, Kristiaan (Leuven U.) ; Vantomme, André (Leuven U.) ; Da Costa Pereira, Lino Miguel (Leuven U.) |
| Publication | 2017 |
| Imprint | 20 Jan 2017 |
| Number of pages | 5 |
| In: | Phys. Rev. Lett. 118 (2017) 095501 |
| DOI | 10.1103/PhysRevLett.118.095501 |
| Subject category | Condensed Matter |
| Accelerator/Facility, Experiment | CERN ISOLDE ; IS453 |
| Free keywords | lattice location ; emission channeling ; GaN ; Mg ; p-GaN ; interstitial Mg |
| Abstract | Radioactive 27Mg (t1/2=9.5 min) was implanted into GaN of different doping types at CERN’s ISOLDE facility and its lattice site determined via beta− emission channeling. Following implantations between room temperature and 800°C, the majority of 27Mg occupies the substitutional Ga sites, however, below 350°C significant fractions were also found on interstitial positions 0.6 Å from ideal octahedral sites. The interstitial fraction of Mg was correlated with the GaN doping character, being highest (up to 31%) in samples doped p-type with 2E19 cm−3 stable Mg during epilayer growth, and lowest in Si-doped n-GaN, thus giving direct evidence for the amphoteric character of Mg. Implanting above 350°C converts interstitial 27Mg to substitutional Ga sites, which allows estimating the activation energy for migration of interstitial Mg as between 1.3 and 2.0 eV. |
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Element opprettet 2017-01-20, sist endret 2022-06-30
