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CMS Note
Report number CMS-CR-2015-111
Title Design Optimization of Pixel Sensors using Device Simulations for the Phase-II CMS Tracker Upgrade
Author(s)

Jain, Geetika (Delhi U.) ; Bhardwaj, Ashutosh (Delhi U.) ; Dalal, R ; Eber, Robert (Karlsruhe U., EKP) ; Eichorn, T ; Fernandez Garcia, Marcos (Cantabria Inst. of Phys.) ; Lalwani, Kavita (Delhi U.) ; Messineo, Alberto (INFN, Pisa ; Pisa U.) ; Palomo Pinto, Francisco Rogelio (Cantabria Inst. of Phys.) ; Peltola, Timo Hannu Tapani (Helsinki Inst. of Phys.) ; Printz, Martin (Karlsruhe U., EKP) ; Ranjan, Kirti (Delhi U.) ; Villa, I ; Hidalgo, S

Publication 2016
Imprint 16 Jun 2015
Number of pages 3
In: Nucl. Instrum. Methods Phys. Res., A 824 (2016) 413-416
In: Frontier Detectors for Frontier Physics: 13th Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 24 - 30 May 2015, pp.413-416
DOI 10.1016/j.nima.2015.08.053
Subject category Detectors and Experimental Techniques
Accelerator/Facility, Experiment CERN LHC ; CMS
Abstract begin{abstract} In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway. \end{abstract}
Copyright/License Preprint: (License: CC-BY-4.0)

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 Notice créée le 2015-06-25, modifiée le 2018-06-07


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