Properties of low-lying intruder states in $^{34}$Al and $^{34}$Si sequentially populated in $\beta$-decay of $^{34}$Mg

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Properties of low-lying intruder states in $^{34}$Al and $^{34}$Si sequentially populated in $\beta$-decay of $^{34}$Mg - Negoita, F et al - CERN-INTC-2011-050

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