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Vector Magnetometry Using Shallow Implanted NV Centers in Diamond with Waveguide-Assisted Dipole Excitation and Readout
Authors:
Sajedeh Shahbazi,
Giulio Coccia,
Johannes Lang,
Vibhav Bharadwaj,
Fedor Jelezko,
Roberta Ramponi,
Anthony J. Bennett,
John P. Hadden,
Shane M. Eaton,
Alexander Kubanek
Abstract:
On-chip magnetic field sensing with Nitrogen-Vacancy (NV) centers in diamond requires scalable integration of 3D waveguides into diamond substrates. Here, we develop a sensing array device with an ensemble of shallow implanted NV centers integrated with arrays of laser-written waveguides for excitation and readout of NV signals. Our approach enables an easy-to-operate on-chip magnetometer with a p…
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On-chip magnetic field sensing with Nitrogen-Vacancy (NV) centers in diamond requires scalable integration of 3D waveguides into diamond substrates. Here, we develop a sensing array device with an ensemble of shallow implanted NV centers integrated with arrays of laser-written waveguides for excitation and readout of NV signals. Our approach enables an easy-to-operate on-chip magnetometer with a pixel size proportional to the Gaussian mode area of each waveguide. The performed continuous wave optically detected magnetic resonance on each waveguide gives an average dc-sensitivity value of $195 \pm 3 {nT}/\sqrt{Hz}$, which can be improved with lock-in-detection or pulsed-microwave sequences. We apply a magnetic field to separate the four NV crystallographic orientations of the magnetic resonance and then utilize a DC current through a straight wire antenna close to the waveguide to prove the sensor capabilities of our device. We reconstruct the complete vector magnetic field in the NV crystal frame using three different NV crystallographic orientations. By knowing the polarization axis of the waveguide mode, we project the magnetic field vector into the lab frame.
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Submitted 26 July, 2024;
originally announced July 2024.
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Tunable frequency conversion in doped photonic crystal fiber pumped near degeneracy
Authors:
Leah R Murphy,
Mateusz J Olszewski,
Petros Androvitsaneas,
Miguel Alvarez Perez,
Will A M Smith,
Anthony J Bennett,
Peter J Mosley,
Alex O C Davis
Abstract:
Future quantum networks will rely on the ability to coherently transfer optically encoded quantum information between different wavelength bands. Bragg-scattering four-wave mixing in optical fiber is a promising route to achieving this, but requires fibers with precise dispersion control and broadband transmission at signal, target and pump wavelengths. Here we introduce a photonic crystal fiber w…
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Future quantum networks will rely on the ability to coherently transfer optically encoded quantum information between different wavelength bands. Bragg-scattering four-wave mixing in optical fiber is a promising route to achieving this, but requires fibers with precise dispersion control and broadband transmission at signal, target and pump wavelengths. Here we introduce a photonic crystal fiber with a germanium-doped core featuring group velocity matching at 1550 nm, the telecoms C-band, and 920 nm, within the emission range of efficient single photon sources based on InAs quantum dots. With low chromatic walk-off and good optical guidance even at long wavelengths, large lengths of this fiber are used to achieve nanometer-scale frequency shifts between wavelengths around 920 nm with up to 79.4\% internal conversion efficiency, allowing dissimilar InAs dots to be interfaced. We also show how cascading this frequency conversion can be used to generate a frequency comb away from telecoms wavelengths. Finally, we use the fiber to demonstrate tunable frequency conversion of weak classical signals around 918 nm to the telecoms C-band.
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Submitted 12 July, 2024;
originally announced July 2024.
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Probing Purcell enhancement and photon collection efficiency of InAs quantum dots at nodes of the cavity electric field
Authors:
Matthew Jordan,
Petros Androvitsaneas,
Rachel N Clark,
Aristotelis Trapalis,
Ian Farrer,
Wolfgang Langbein,
Anthony J. Bennett
Abstract:
The interaction of excitonic transitions with confined photonic modes enables tests of quantum physics and design of efficient optoelectronic devices. Here we study how key metrics such as Purcell factor, beta-factor and collection efficiency are determined by the non-cavity modes which exist in real devices, taking the well-studied micropillar cavity as an example. Samples with dots at different…
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The interaction of excitonic transitions with confined photonic modes enables tests of quantum physics and design of efficient optoelectronic devices. Here we study how key metrics such as Purcell factor, beta-factor and collection efficiency are determined by the non-cavity modes which exist in real devices, taking the well-studied micropillar cavity as an example. Samples with dots at different positions in the cavity field allow us to quantify the effect of the non-cavity modes and show that the zero-phonon line and the phonon-assisted emission into the cavity mode HE11 is suppressed by positioning dots at the field node.
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Submitted 20 January, 2024;
originally announced January 2024.
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Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
Authors:
E. Nieto Hernández,
H. B. Yağcı,
V. Pugliese,
P. Aprà,
J. K. Cannon,
S. G. Bishop,
J. Hadden,
S. Ditalia Tchernij,
Olivero,
A. J. Bennett,
J. Forneris
Abstract:
Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamo…
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Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state.
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Submitted 31 October, 2023;
originally announced October 2023.
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Photo-dynamics of quantum emitters in aluminum nitride
Authors:
Yanzhao Guo,
John P. Hadden,
Rachel N. Clark,
Samuel G. Bishop,
Anthony J. Bennett
Abstract:
Aluminum nitride is a technologically important wide bandgap semiconductor which has been shown to host bright quantum emitters. In this paper, we probe the photodynamics of quantum emitters in aluminum nitride using photon emission correlations and time-resolved spectroscopy. We identify that each emitter contains as many as 6 internal energy levels with distinct laser power-dependent behaviors.…
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Aluminum nitride is a technologically important wide bandgap semiconductor which has been shown to host bright quantum emitters. In this paper, we probe the photodynamics of quantum emitters in aluminum nitride using photon emission correlations and time-resolved spectroscopy. We identify that each emitter contains as many as 6 internal energy levels with distinct laser power-dependent behaviors. Power-dependent shelving and de-shelving processes, such as optically induced ionization and recombination are considered, indicating complex optical dynamics associated with the spontaneous and optically pumped transitions. State population dynamics simulations qualitatively explain the temporal behaviours of the quantum emitters, revealing that those with pump-dependent de-shelving processes can saturate at significantly higher intensities, resulting in bright room-temperature quantum light emission.
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Submitted 27 October, 2023;
originally announced October 2023.
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Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens
Authors:
S G Bishop,
J K Cannon,
H B Yagci,
R N Clark,
J P Hadden,
W Langbein,
A J Bennett
Abstract:
Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and total internal reflection. Here we show that an index-matched solid immersion lens can, if placed sufficiently close to the semiconductor, extract light coupled…
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Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and total internal reflection. Here we show that an index-matched solid immersion lens can, if placed sufficiently close to the semiconductor, extract light coupled through the evanescent field at the surface. Using both numerical simulations and experiments, we investigate how changing the thickness of the spacer between the semiconductor and lens impacts the collection efficiency (CE). Using automatic selection and measurement of 100 s of individually addressable colour centres in several aluminium nitride samples we demonstrate spacer-thickness dependent photon CE enhancement, with a mean enhancement factor of 4.2 and a highest measured photon detection rate of 743 kcps.
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Submitted 10 October, 2023;
originally announced October 2023.
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Polarization study of single color centers in aluminum nitride
Authors:
J. K. Cannon,
S. G. Bishop,
J. P. Hadden,
H. B. Yagci,
A. J. Bennett
Abstract:
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the las…
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Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We present a technique to rapidly map an ensemble of these single photon emitters, identifying all emitters, not just those with absorption dipole parallel to the laser polarization. We demonstrate a fast technique to determine their absorption polarization orientation in the c-plane, finding they are uniformly distributed in orientation, in contrast to many other emitters in crystalline materials.
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Submitted 10 October, 2023;
originally announced October 2023.
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Direct-write projection lithography of quantum dot micropillar single photon sources
Authors:
Petros Androvitsaneas,
Rachel N. Clark,
Matthew Jordan,
Tomas Peach,
Stuart Thomas,
Saleem Shabbir,
Angela D. Sobiesierski,
Aristotelis Trapalis,
Ian A. Farrer,
Wolfgang W. Langbein,
Anthony J. Bennett
Abstract:
We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, pre…
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We have developed a process to mass-produce quantum dot micropillar cavities using direct-write lithography. This technique allows us to achieve high volume patterning of high aspect ratio pillars with vertical, smooth sidewalls maintaining a high quality factor for diameters below 2.0 $μ$m. Encapsulating the cavities in a thin layer of oxide (Ta$_2$O$_5$) prevents oxidation in the atmosphere, preserving the optical properties of the cavity over months of ambient exposure. We confirm that single dots in the cavities can be deterministically excited to create high purity indistinguishable single photons with interference visibility $(96.2\pm0.7)\%$.
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Submitted 31 March, 2023;
originally announced April 2023.
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Bullseye dielectric cavities for photon collection from a surface-mounted quantum-light-emitter
Authors:
Reza Hekmati,
John P. Hadden,
Annie Mathew,
Samuel G. Bishop,
Stephen A. Lynch,
Anthony J. Bennett
Abstract:
Coupling light from a point source to a propagating mode is an important problem in nano-photonics and is essential for many applications in quantum optics. Circular "bullseye" cavities, consisting of concentric rings of alternating refractive index, are a promising technology that can achieve near-unity coupling into a first lens. Here we design a bullseye structure suitable for enhancing the emi…
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Coupling light from a point source to a propagating mode is an important problem in nano-photonics and is essential for many applications in quantum optics. Circular "bullseye" cavities, consisting of concentric rings of alternating refractive index, are a promising technology that can achieve near-unity coupling into a first lens. Here we design a bullseye structure suitable for enhancing the emission from dye molecules, 2D materials and nano-diamonds positioned on the surface of these cavities. A periodic design of cavity, meeting the Bragg scattering condition, achieves a Purcell factor of 22.5 and collection efficiency of 80 %. We also tackle the more challenging task of designing a cavity for coupling to a low numerical aperture fibre in the near field. Using an iterative procedure, we show that apodized (non-periodic) rings can achieve a collection efficiency that exceeds the periodic Bragg cavity.
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Submitted 7 September, 2022;
originally announced September 2022.
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Room-Temperature Quantum Emitter in Aluminum Nitride
Authors:
Sam G. Bishop,
John P. Hadden,
Faris D. Alzahrani,
Reza Hekmati,
Diana L. Huffaker,
Wolfgang W. Langbein,
Anthony J. Bennett
Abstract:
A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep with…
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A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
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Submitted 3 August, 2022;
originally announced August 2022.
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Design of free-space couplers for suspended triangular nano-beam waveguides
Authors:
J. P. Hadden,
Cobi Maynard,
Daryl M. Beggs,
Robert A. Taylor,
Anthony J. Bennett
Abstract:
Photonic waveguides with triangular cross section are being investigated for material systems such as diamond, glasses and gallium nitride, which lack easy options to create conventional rectangular nanophotonic waveguides. The design rules for optical elements in these triangular waveguides, such as couplers and gratings, are not well established. Here we present simulations of elements designed…
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Photonic waveguides with triangular cross section are being investigated for material systems such as diamond, glasses and gallium nitride, which lack easy options to create conventional rectangular nanophotonic waveguides. The design rules for optical elements in these triangular waveguides, such as couplers and gratings, are not well established. Here we present simulations of elements designed to couple light into, and out of, triangular waveguides from the vertical direction, which can be implemented with current angled-etch fabrication technology. The devices demonstrate coupling efficiencies approaching \unit{50}{\%} for light focused from a high numerical aperture objective. The implementation of such couplers will enable fast and efficient testing of closely spaced integrated circuit components.
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Submitted 13 July, 2022;
originally announced July 2022.
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Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
Authors:
S. G. Bishop,
J. P. Hadden,
R. Hekmati,
J. K. Cannon,
W. W. Langbein,
A. J. Bennett
Abstract:
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar ga…
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Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate, emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of $4.3\pm0.1$, whilst improving the lateral resolution by a factor equal to the refractive index of the lens.
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Submitted 14 February, 2022;
originally announced February 2022.
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Two-Photon Interference of Single Photons from Dissimilar Sources
Authors:
Christian Dangel,
Jonas Schmitt,
Anthony J. Bennett,
Kai Müller,
Jonathan J. Finley
Abstract:
Entanglement swapping and heralding are at the heart of many protocols for distributed quantum information. For photons, this typically involves Bell state measurements based on two-photon interference effects. In this context, hybrid systems that combine high rate, ultra-stable and pure quantum sources with long-lived quantum memories are particularly interesting. Here, we develop a theoretical d…
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Entanglement swapping and heralding are at the heart of many protocols for distributed quantum information. For photons, this typically involves Bell state measurements based on two-photon interference effects. In this context, hybrid systems that combine high rate, ultra-stable and pure quantum sources with long-lived quantum memories are particularly interesting. Here, we develop a theoretical description of pulsed two-photon interference of photons from dissimilar sources to predict the outcomes of second-order cross-correlation measurements. These are directly related to, and hence used to quantify, photon indistinguishability. We study their dependence on critical system parameters such as quantum state lifetime and frequency detuning, and quantify the impact of emission time jitter, pure dephasing and spectral wandering. Our results show that for fixed lifetime of emitter one, for each frequency detuning there is an optimal lifetime of emitter two that leads to highest photon indistinguishability. Expectations for different hybrid combinations involving III-V quantum dots, color centers in diamond, 2D materials and atoms are quantitatively compared for real-world system parameters. Our work both provides a theoretical basis for the treatment of dissimilar emitters and enables assessment of which imperfections can be tolerated in hybrid photonic quantum networks.
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Submitted 10 February, 2022;
originally announced February 2022.
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Tailoring Topological Edge States with Photonic Crystal Nanobeam Cavities
Authors:
Yongkang Gong,
Liang Guo,
Stephan Wong,
Anthony J. Bennett,
Sang Soon Oh
Abstract:
The realization of topological edge states (TESs) in photonic systems has provided unprecedented opportunities for manipulating light in novel manners. The Su-Schrieffer-Heeger (SSH) model has recently gained significant attention and has been exploited in a wide range of photonic platforms to create TESs. We develop a photonic topological insulator strategy based on SSH photonic crystal nanobeam…
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The realization of topological edge states (TESs) in photonic systems has provided unprecedented opportunities for manipulating light in novel manners. The Su-Schrieffer-Heeger (SSH) model has recently gained significant attention and has been exploited in a wide range of photonic platforms to create TESs. We develop a photonic topological insulator strategy based on SSH photonic crystal nanobeam cavities. In contrast to the conventional photonic SSH schemes which are based on alternately tuned coupling strength in one-dimensional lattice, our proposal provides higher flexibility and allows tailoring TESs by manipulating mode coupling in a two-dimensional manner. We reveal that the proposed hole-array based nanobeams in a dielectric membrane can selectively tailor single or double TESs in the telecommunication region by controlling the coupling strength of the adjacent SSH nanobeams in both vertical and horizontal directions. Our finding provides an in-depth understanding of the SSH model, and allows an additional degree of freedom in exploiting the SSH model for integrated topological photonic devices with unique properties and functionalities.
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Submitted 27 June, 2020;
originally announced June 2020.
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Topological Insulator Laser Using Valley-Hall Photonic Crystals
Authors:
Yongkang Gong,
Stephan Wong,
Anthony J. Bennett,
Diana L. Huffaker,
Sang Soon Oh
Abstract:
Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor caviti…
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Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor cavities formed by topologically distinct Kagome photonic crystals. The proposed planar semiconductor Kagome lattice allows broadband edge states below the light line due to photonic valley hall effect in telecommunication region, which provides a new route to retrieve nontrivial photonic topology and to develop integrated topological systems for robust light generation and transport.
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Submitted 10 January, 2020;
originally announced January 2020.
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Photon phase shift at the few-photon level and optical switching by a quantum dot in a microcavity
Authors:
L. M. Wells,
S. Kalliakos,
B. Villa,
D. J. P. Ellis,
R. M. Stevenson,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pumping mechanism through Raman transitions in an in-plane…
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We exploit the nonlinearity arising from the spin-photon interaction in an InAs quantum dot to demonstrate phase shifts of scattered light pulses at the single-photon level. Photon phase shifts of close to 90 degrees are achieved using a charged quantum dot in a micropillar cavity. We also demonstrate a photon phase switch by using a spin-pumping mechanism through Raman transitions in an in-plane magnetic field. The experimental findings are supported by a theoretical model which explores the dynamics of the system. Our results demonstrate the potential of quantum dot-induced nonlinearities for quantum information processing.
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Submitted 18 July, 2019;
originally announced July 2019.
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Independent indistinguishable quantum light sources on a reconfigurable photonic integrated circuit
Authors:
D. J. P. Ellis,
A. J. Bennett,
C. Dangel,
J. P. Lee,
J. P. Griffiths,
T. A. Mitchell,
T. -K. Paraiso,
P. Spencer,
D. A. Ritchie,
A. J. Shields
Abstract:
We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, independent InGaAs/GaAs quantum-light-emitting-diodes (QLEDs) with a silicon oxynitride waveguide circuit. Each waveguide joining the circuit can then be excited by a separate, independently electrically contacted QLED. We show that the emission from neighbouring QLEDs can be independently tuned to d…
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We report a compact, scalable, quantum photonic integrated circuit realised by combining multiple, independent InGaAs/GaAs quantum-light-emitting-diodes (QLEDs) with a silicon oxynitride waveguide circuit. Each waveguide joining the circuit can then be excited by a separate, independently electrically contacted QLED. We show that the emission from neighbouring QLEDs can be independently tuned to degeneracy using the Stark Effect and that the resulting photon streams are indistinguishable. This enables on-chip Hong-Ou-Mandel-type interference, as required for many photonic quantum information processing schemes.
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Submitted 12 March, 2018;
originally announced March 2018.
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Electrically driven and electrically tunable quantum light sources
Authors:
J. P. Lee,
E. Murray,
A. J. Bennett,
D. J. P. Ellis,
C. Dangel,
I. Farrer,
P. Spencer,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots…
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Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fine structure splitting.
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Submitted 16 January, 2017;
originally announced January 2017.
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A semiconductor photon-sorter
Authors:
A. J. Bennett,
J. P. Lee,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
Photons do not interact directly with each other, but conditional control of one beam by another can be achieved with non-linear optical media at high field intensities. It is exceedingly difficult to reach such intensities at the single photon level but proposals have been made to obtain effective interactions by scattering photons from single transitions. We report here effective interactions be…
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Photons do not interact directly with each other, but conditional control of one beam by another can be achieved with non-linear optical media at high field intensities. It is exceedingly difficult to reach such intensities at the single photon level but proposals have been made to obtain effective interactions by scattering photons from single transitions. We report here effective interactions between photons created using a quantum dot weakly coupled to a cavity. We show that a passive single-photon non-linearity can modify the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and sort polarisation correlated photons from an uncorrelated stream using a single spin. These results pave the way for optical switches operated by single quanta of light.
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Submitted 20 May, 2016;
originally announced May 2016.
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Engineering quantum dots for electrical control of the fine structure splitting
Authors:
M. A. Pooley,
A. J. Bennett,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth condition…
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We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this linear tuning is a general feature of self-assembled quantum dots, observed under different growth conditions, emission wavelengths and in different material systems. Statistical measurements of characteristic parameters such as emission energy, Stark shift and FSS tuning are presented which may provide a guide for future attempts to increase the yield of quantum dots that can be tuned to a minimal value of FSS with vertical electric field.
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Submitted 22 July, 2015;
originally announced July 2015.
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Ultrafast electrical control of a resonantly driven single photon source
Authors:
Y. Cao,
A. J. Bennett,
D. J. P. Ellis,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
We demonstrate generation of a pulsed stream of electrically triggered single photons in resonance fluorescence, by applying high frequency electrical pulses to a single quantum dot in a p-i-n diode under resonant laser excitation. Single photon emission was verifed, with the probability of multiple photon emission reduced to 2.8%. We show that despite the presence of charge noise in the emission…
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We demonstrate generation of a pulsed stream of electrically triggered single photons in resonance fluorescence, by applying high frequency electrical pulses to a single quantum dot in a p-i-n diode under resonant laser excitation. Single photon emission was verifed, with the probability of multiple photon emission reduced to 2.8%. We show that despite the presence of charge noise in the emission spectrum of the dot, resonant excitation acts as a filter to generate narrow bandwidth photons.
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Submitted 22 July, 2015;
originally announced July 2015.
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Quantum photonics hybrid integration platform
Authors:
Eoin Murray,
David P. Ellis,
Thomas Meany,
Frederik F. Floether,
James P. Lee,
Jonathan P. Griffiths,
Geb A. C. Jones,
Ian Farrer,
David A. Ritchie,
Anthony J. Bennett,
Andrew J. Shields
Abstract:
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguid…
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Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single photon nature of the emission was verified by an on-chip Hanbury Brown and Twiss measurement.
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Submitted 31 July, 2015; v1 submitted 1 July, 2015;
originally announced July 2015.
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In-plane emission of indistinguishable photons generated by an integrated quantum emitter
Authors:
Sokratis Kalliakos,
Yarden Brody,
Andre Schwagmann,
Anthony J. Bennett,
Martin B. Ward,
David J. P. Ellis,
Joanna Skiba-Szymanska,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon i…
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We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.
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Submitted 16 June, 2014;
originally announced June 2014.
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Ultrashort dead time of photon-counting InGaAs avalanche photodiodes
Authors:
A. R. Dixon,
J. F. Dynes,
Z. L. Yuan,
A. W. Sharpe,
A. J. Bennett,
A. J. Shields
Abstract:
We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function $g^{(2)}$ of the emission from a diode laser with a si…
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We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function $g^{(2)}$ of the emission from a diode laser with a single detector which works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quantum computing.
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Submitted 9 June, 2009; v1 submitted 18 May, 2009;
originally announced May 2009.
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A simple atmospheric electrical instrument for educational use
Authors:
A. J. Bennett,
R. G. Harrison
Abstract:
Electricity in the atmosphere provides an ideal topic for educational outreach in environmental science. To support this objective, a simple instrument to measure real atmospheric electrical parameters has been developed and its performance evaluated. This project compliments educational activities undertaken by the Coupling of Atmospheric Layers (CAL) European research collaboration. The new in…
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Electricity in the atmosphere provides an ideal topic for educational outreach in environmental science. To support this objective, a simple instrument to measure real atmospheric electrical parameters has been developed and its performance evaluated. This project compliments educational activities undertaken by the Coupling of Atmospheric Layers (CAL) European research collaboration. The new instrument is inexpensive to construct and simple to operate, readily allowing it to be used in schools as well as at the undergraduate University level. It is suited to students at a variety of different educational levels, as the results can be analysed with different levels of sophistication. Students can make measurements of the fair weather electric field and current density, thereby gaining an understanding of the electrical nature of the atmosphere. This work was stimulated by the centenary of the 1906 paper in which C.T.R. Wilson described a new apparatus to measure the electric field and conduction current density. Measurements using instruments based on the same principles continued regularly in the UK until 1979. The instrument proposed is based on the same physical principles as C.T.R. Wilson's 1906 instrument.
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Submitted 25 January, 2007;
originally announced January 2007.
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Constructional details for A simple atmospheric electrical instrument for educational use
Authors:
A. J. Bennett,
R. G. Harrison
Abstract:
Electricity in the atmosphere provides an ideal topic for educational outreach in environmental science. To support this objective, a simple instrument to measure real atmospheric electrical parameters has been developed and its performance evaluated. This project compliments educational activities undertaken by the Coupling of Atmospheric Layers (CAL) European research collaboration. The new in…
▽ More
Electricity in the atmosphere provides an ideal topic for educational outreach in environmental science. To support this objective, a simple instrument to measure real atmospheric electrical parameters has been developed and its performance evaluated. This project compliments educational activities undertaken by the Coupling of Atmospheric Layers (CAL) European research collaboration. The new instrument is inexpensive to construct and simple to operate, readily allowing it to be used in schools as well as at the undergraduate University level. It is suited to students at a variety of different educational levels, as the results can be analysed with different levels of sophistication. Students can make measurements of the fair weather electric field and current density, thereby gaining an understanding of the electrical nature of the atmosphere. This work was stimulated by the centenary of the 1906 paper in which C.T.R. Wilson described a new apparatus to measure the electric field and conduction current density. Measurements using instruments based on the same principles continued regularly in the UK until 1979. The instrument proposed is based on the same physical principles as C.T.R. Wilson's 1906 instrument. The constructional details of the instrument are provided here.
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Submitted 24 January, 2007;
originally announced January 2007.
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Effect of the troposphere on surface neutron counter measurements
Authors:
K. L. Aplin,
R. G. Harrison,
A. J. Bennett
Abstract:
Surface neutron counter data are often used as a proxy for atmospheric ionisation from cosmic rays in studies of extraterrestrial effects on climate. Neutron counter instrumentation was developed in the 1950s and relationships between neutron counts, ionisation and meteorological conditions were investigated thoroughly using the techniques available at the time; the analysis can now be extended…
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Surface neutron counter data are often used as a proxy for atmospheric ionisation from cosmic rays in studies of extraterrestrial effects on climate. Neutron counter instrumentation was developed in the 1950s and relationships between neutron counts, ionisation and meteorological conditions were investigated thoroughly using the techniques available at the time; the analysis can now be extended using modern data. Whilst surface neutron counts are shown to be a good proxy for ionisation rate, the usual meteorological correction applied to surface neutron measurements, using surface atmospheric pressure, does not completely compensate for tropospheric effects on neutron data. Residual correlations remain between neutron counts, atmospheric pressure and geopotential height, obtained from meteorological reanalysis data. These correlations may be caused by variations in the height and temperature of the atmospheric layer at ~100hPa. This is where the primary cosmic rays interact with atmospheric air, producing a cascade of secondary ionising particles.
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Submitted 4 March, 2005;
originally announced March 2005.
