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Sensitivity projections for a dual-phase argon TPC optimized for light dark matter searches through the ionization channel
Authors:
P. Agnes,
I. Ahmad,
S. Albergo,
I. F. M. Albuquerque,
T. Alexander,
A. K. Alton,
P. Amaudruz,
M. Atzori Corona,
D. J. Auty,
M. Ave,
I. Ch. Avetisov,
R. I. Avetisov,
O. Azzolini,
H. O. Back,
Z. Balmforth,
V. Barbarian,
A. Barrado Olmedo,
P. Barrillon,
A. Basco,
G. Batignani,
E. Berzin,
A. Bondar,
W. M. Bonivento,
E. Borisova,
B. Bottino
, et al. (274 additional authors not shown)
Abstract:
Dark matter lighter than 10 GeV/c$^2$ encompasses a promising range of candidates. A conceptual design for a new detector, DarkSide-LowMass, is presented, based on the DarkSide-50 detector and progress toward DarkSide-20k, optimized for a low-threshold electron-counting measurement. Sensitivity to light dark matter is explored for various potential energy thresholds and background rates. These stu…
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Dark matter lighter than 10 GeV/c$^2$ encompasses a promising range of candidates. A conceptual design for a new detector, DarkSide-LowMass, is presented, based on the DarkSide-50 detector and progress toward DarkSide-20k, optimized for a low-threshold electron-counting measurement. Sensitivity to light dark matter is explored for various potential energy thresholds and background rates. These studies show that DarkSide-LowMass can achieve sensitivity to light dark matter down to the solar neutrino floor for GeV-scale masses and significant sensitivity down to 10 MeV/c$^2$ considering the Migdal effect or interactions with electrons. Requirements for optimizing the detector's sensitivity are explored, as are potential sensitivity gains from modeling and mitigating spurious electron backgrounds that may dominate the signal at the lowest energies.
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Submitted 20 June, 2023; v1 submitted 2 September, 2022;
originally announced September 2022.
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Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$
Authors:
A. R. Altamura,
F. Acerbi,
C. Nociforo,
V. Regazzoni,
A. Mazzi,
A. Gola
Abstract:
Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with…
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Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels.
In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reaching fluences up to $10^{12}n_{eq}/mm^2$ (1 MeV neutron equivalent) which correspond $10^{14}n_{eq}/cm^2$ to and their performances were characterized in detail after an approximately 30 days room temperature annealing. The results show a significant worsening of the primary noise (dark count rate) of the detectors, which increases with the irradiation dose, whereas the other performance parameters like the micro-cell gain, the correlated noise probability and the photon detection efficiency do not show significant variations over the investigated dose range. The breakdown voltage estimation after irradiation is another important aspect for a SiPM. In this contribution, we show several methods for its estimation and compare the results. We also introduced new methodologies to characterize the performance of the SiPMs when they present a very high level of noise.
Lastly, we also analyzed the spatial localization of the proton-induced defects inside the device, i.e. the defects that mostly contribute to the increase of the DCR of the device, through the emission microscopy (EMMI) technique. In particular, we analyzed the SiPMs at the single cell level, trying to identify and spatially localize the defects.
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Submitted 23 June, 2021;
originally announced June 2021.
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Cryogenic SiPM arrays for the DUNE photon detection system
Authors:
A. Falcone,
A. Andreani,
S. Bertolucci,
C. Brizzolari,
N. Buckanamd,
M. Capasso,
C. Cattadori,
P. Carniti,
M. Citterio,
K. Francis,
N. Gallice,
A. Gola,
C. Gotti,
I. Lax,
P. Litrico,
A. Mazzi,
M. Mellinato,
A. Montanari,
L. Patrizii,
L. Pasqualini,
G. Pessina,
M. Pozzato,
S. Riboldi,
P. Sala,
G. Sirri
, et al. (7 additional authors not shown)
Abstract:
In this paper we report on the characterization of SiPM tiles developed for the R & D on the DUNE Photon Detection System. The tiles were produced by Fondazione Bruno Kessler (FBK) employing NUV-HD-SF SiPMs. Special emphasis is given on cryo-reliability of the sensors, i.e. the stability of electric and mechanical properties after thermal cycles at room and 77K temperature. The characterization in…
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In this paper we report on the characterization of SiPM tiles developed for the R & D on the DUNE Photon Detection System. The tiles were produced by Fondazione Bruno Kessler (FBK) employing NUV-HD-SF SiPMs. Special emphasis is given on cryo-reliability of the sensors, i.e. the stability of electric and mechanical properties after thermal cycles at room and 77K temperature. The characterization includes the determination of the I-V curve, a high sensitivity measurement of Dark Count Rate at different overvoltages, and correlated noise. The single p.e. sensitivity is measured as a function of the number of sensors connected to a single electronic channel, after amplification at 77K using a dedicated cold amplifier.
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Submitted 24 January, 2020;
originally announced January 2020.
