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Global Rotation of Skyrmion Bags under Vertical Microwave Fields
Authors:
Lan Bo,
Rongzhi Zhao,
Xichao Zhang,
Masahito Mochizuki,
Xuefeng Zhang
Abstract:
Magnetic skyrmion bags are composite topological spin textures with arbitrary topological charges. Here, we computationally study the transient rotational motion of skyrmion bags, which is characterized by a global rotation of the inner skyrmions around the central point. Distinct from conventional rotational modes found in skyrmions, the observed rotation is a forced motion associated with the br…
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Magnetic skyrmion bags are composite topological spin textures with arbitrary topological charges. Here, we computationally study the transient rotational motion of skyrmion bags, which is characterized by a global rotation of the inner skyrmions around the central point. Distinct from conventional rotational modes found in skyrmions, the observed rotation is a forced motion associated with the breathing mode induced solely by vertical microwave fields. The driving force behind this rotation originates from the interactions between outer and inner skyrmions, with the angular velocity determined by the phase difference resulting from their asynchronous breathing behaviors. It is also found that skyrmion bags with larger skyrmion numbers are more conducive to the occurrence of the rotation. Our results are useful for understanding the cluster dynamics of complex topological spin textures driven by dynamic fields.
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Submitted 23 February, 2024;
originally announced February 2024.
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Minimal design of the elephant trunk as an active filament
Authors:
Bartosz Kaczmarski,
Sophie Leanza,
Renee Zhao,
Derek E. Moulton,
Ellen Kuhl,
Alain Goriely
Abstract:
One of the key problems in active materials is the control of shape through actuation. A fascinating example of such control is the elephant trunk, a long, muscular, and extremely dexterous organ with multiple vital functions. The elephant trunk is an object of fascination for biologists, physicists, and children alike. Its versatility relies on the intricate interplay of multiple unique physical…
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One of the key problems in active materials is the control of shape through actuation. A fascinating example of such control is the elephant trunk, a long, muscular, and extremely dexterous organ with multiple vital functions. The elephant trunk is an object of fascination for biologists, physicists, and children alike. Its versatility relies on the intricate interplay of multiple unique physical mechanisms and biological design principles. Here we explore these principles using the theory of active filaments and build, theoretically, computationally, and experimentally, a minimal model that explains and accomplishes some of the spectacular features of the elephant trunk.
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Submitted 14 February, 2024;
originally announced February 2024.
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Revealing crucial effects of reservoir environment and hydrocarbon fractions on fluid behaviour in kaolinite pores
Authors:
Rixin Zhao,
Haitao Xue,
Shuangfang Lu,
H. Chris Greenwell,
Valentina Erastova
Abstract:
Interactions of hydrocarbons (HCs) and clay surfaces are responsible for fluid behaviour within shale reservoirs. These interactions are affected by the diversity of HC components and the variations in environmental conditions. This study examines the interactions between kaolinite clay, featuring two distinct basal surfaces, and an array of HCs. We assess the impact of various molecular structure…
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Interactions of hydrocarbons (HCs) and clay surfaces are responsible for fluid behaviour within shale reservoirs. These interactions are affected by the diversity of HC components and the variations in environmental conditions. This study examines the interactions between kaolinite clay, featuring two distinct basal surfaces, and an array of HCs. We assess the impact of various molecular structures, functional groups, and environmental conditions (focusing on the reservoir temperature and pressure ranges) on the adsorption selectivity, surface packing, molecular alignment and orientation, and diffusion of HCs. Analyses of molecular interaction energies provide a quantitative elucidation of the adsorption mechanisms of HCs on the different kaolinite surfaces. Our findings suggest that molecular configuration, functional groups, and spatial effects dictate the distribution patterns of HCs for the different kaolinite surfaces. The differences in the interaction energy between various HCs with kaolinite reveal the adsorption strength of different HCs in the order of asphaltenes>heteroatomic HCs>saturated HCs>aromatic HCs. Furthermore, we observe that the adsorptive characteristics are highly temperature-sensitive; with increased temperatures markedly reducing the adsorption amount. Beyond a certain threshold, the effect of pressure rise on the fluid behaviour of HCs is non-negligible and is related to molecular packing and reduced mobility. Simulation results based on actual geological characteristics demonstrate notable adsorption disparities among hydrocarbon components on different kaolinite surfaces, influenced by competitive adsorption and clay surface interactions. Polar surfaces are predominantly occupied by heteroatomic HCs, whereas on non-polar surfaces, asphaltenes and heavy saturated HCs develop multi-layer adsorption structures, with molecules aligned parallel to the surface.
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Submitted 2 February, 2024;
originally announced February 2024.
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General-purpose machine-learned potential for 16 elemental metals and their alloys
Authors:
Keke Song,
Rui Zhao,
Jiahui Liu,
Yanzhou Wang,
Eric Lindgren,
Yong Wang,
Shunda Chen,
Ke Xu,
Ting Liang,
Penghua Ying,
Nan Xu,
Zhiqiang Zhao,
Jiuyang Shi,
Junjie Wang,
Shuang Lyu,
Zezhu Zeng,
Shirong Liang,
Haikuan Dong,
Ligang Sun,
Yue Chen,
Zhuhua Zhang,
Wanlin Guo,
Ping Qian,
Jian Sun,
Paul Erhart
, et al. (3 additional authors not shown)
Abstract:
Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete repre…
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Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete representation of the chemical space, we show, via principal component analysis and diverse test datasets, that employing one-component and two-component systems suffices. Our unified UNEP-v1 model exhibits superior performance across various physical properties compared to a widely used embedded-atom method potential, while maintaining remarkable efficiency. We demonstrate our approach's effectiveness through reproducing experimentally observed chemical order and stable phases, and large-scale simulations of plasticity and primary radiation damage in MoTaVW alloys. This work represents a significant leap towards a unified general-purpose MLP encompassing the periodic table, with profound implications for materials science.
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Submitted 12 June, 2024; v1 submitted 8 November, 2023;
originally announced November 2023.
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Quantifying the relevance of long-range forces for crystal nucleation in water
Authors:
Renjie Zhao,
Ziyue Zou,
John D. Weeks,
Pratyush Tiwary
Abstract:
Understanding nucleation from aqueous solutions is of fundamental importance in a multitude of fields, ranging from materials science to biophysics. The complex solvent-mediated interactions in aqueous solutions hamper the development of a simple physical picture elucidating the roles of different interactions in nucleation processes. In this work we make use of three complementary techniques to d…
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Understanding nucleation from aqueous solutions is of fundamental importance in a multitude of fields, ranging from materials science to biophysics. The complex solvent-mediated interactions in aqueous solutions hamper the development of a simple physical picture elucidating the roles of different interactions in nucleation processes. In this work we make use of three complementary techniques to disentangle the role played by short and long-range interactions in solvent mediated nucleation. Specifically, the first approach we utilize is the local molecular field (LMF) theory to renormalize long-range Coulomb electrostatics. Secondly, we use well-tempered metadynamics to speed up rare events governed by short-range interactions. Thirdly, deep learning-based State Predictive Information Bottleneck approach is employed in analyzing the reaction coordinate of the nucleation processes obtained from LMF treatment coupled with well-tempered metadynamics. We find that the two-step nucleation mechanism can largely be captured by the short-range interactions, while the long-range interactions further contribute to the stability of the primary crystal state at ambient conditions. Furthermore, by analyzing the reaction coordinate obtained from combined LMF-metadynamics treatment, we discern the fluctuations on different time scales, highlighting the need for long-range interactions when accounting for metastability.
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Submitted 24 August, 2023; v1 submitted 24 July, 2023;
originally announced July 2023.
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Controllable Creation of Skyrmion Bags in a Ferromagnetic Nanodisk
Authors:
Lan Bo,
Rongzhi Zhao,
Chenglong Hu,
Xichao Zhang,
Xuefeng Zhang,
Masahito Mochizuki
Abstract:
Skyrmion bags are composed of an outer skyrmion and arbitrary inner skyrmions, which have recently been observed in bulk chiral magnets, but still remain elusive in magnetic films. Here, we propose a method of creating skyrmion bags in a thin-film nanodisk, which includes three steps. Firstly, the size of outer skyrmion is enlarged by a vertical magnetic field, then inner skyrmions are nucleated a…
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Skyrmion bags are composed of an outer skyrmion and arbitrary inner skyrmions, which have recently been observed in bulk chiral magnets, but still remain elusive in magnetic films. Here, we propose a method of creating skyrmion bags in a thin-film nanodisk, which includes three steps. Firstly, the size of outer skyrmion is enlarged by a vertical magnetic field, then inner skyrmions are nucleated at an off-center area by local current injection, and the system is finally reconstructed due to multiple inter-skyrmion potentials. Thus, skyrmion bags with topological charge up to forty can be created. Simulated Lorentz transmission electron microscopy images are given to facilitate the experimental demonstration. Our proposal is expected to inspire relevant experiments in magnetic films, and pave the way for potential spintronic applications based on skyrmion bags.
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Submitted 13 July, 2023;
originally announced July 2023.
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Exciton-phonon Coupling Controls Exciton-polaron Formation and Hot Carrier Relaxation in Rigid Dion-Jacobson Type Two-Dimensional Perovskites
Authors:
Somnath Biswas,
Fatimah Alowa,
Ruyan Zhao,
Marios Zacharias,
Sahar Sharifzadeh,
David F. Coker,
Dwight S. Seferos,
Gregory D. Scholes
Abstract:
The efficiency of two-dimensional Dion-Jacobson-type materials relies on the complex interplay between electronic and lattice dynamics; however, questions remain about the functional role of exciton-phonon interactions. This study establishes the robust polaronic nature of the excitons in these materials at room temperature by combining ultrafast spectroscopy and electronic structural calculations…
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The efficiency of two-dimensional Dion-Jacobson-type materials relies on the complex interplay between electronic and lattice dynamics; however, questions remain about the functional role of exciton-phonon interactions. This study establishes the robust polaronic nature of the excitons in these materials at room temperature by combining ultrafast spectroscopy and electronic structural calculations. We show that polaronic distortion is associated with low-frequency (30-60 cm-1) lead iodide octahedral lattice motions. More importantly, we discover how targeted ligand modification of this two-dimensional perovskite structure controls exciton-phonon coupling, exciton-polaron population, and carrier cooling. At high excitation density, stronger exciton-phonon coupling increases the hot carrier lifetime, forming a hot-phonon bottleneck. Our study provides detailed insight into the exciton-phonon coupling and its role in carrier cooling in two-dimensional perovskites relevant for developing emerging hybrid semiconductor materials with tailored properties.
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Submitted 2 May, 2023;
originally announced May 2023.
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Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Authors:
Zhao-Yi Yan,
Zhan Hou,
Kan-Hao Xue,
Tian Lu,
Ruiting Zhao,
Junying Xue,
Fan Wu,
Minghao Shao,
Jianlan Yan,
Anzhi Yan,
Zhenze Wang,
Penghui Shen,
Mingyue Zhao,
Xiangshui Miao,
Zhaoyang Lin,
Houfang Liu,
He Tian,
Yi Yang,
Tian-Ling Ren
Abstract:
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts…
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Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits.
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Submitted 20 March, 2023;
originally announced March 2023.
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An efficient model algorithm for two-dimensional field-effect transistors
Authors:
Zhao-Yi Yan,
Zhan Hou,
Fan Wu,
Ruiting Zhao,
Jianlan Yan,
Anzhi Yan,
Zhenze Wang,
Kan-Hao Xue,
Houfang Liu,
He Tian,
Yi Yang,
Tian-Ling Ren
Abstract:
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the stan…
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Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits.
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Submitted 13 March, 2023;
originally announced March 2023.
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The unexpected magnetism in 2D group-IV-doped GaN for spintronic applications
Authors:
Rui Zhao,
Rui Guo,
Yanfeng Ge,
Yong Liu,
Wenhui Wan
Abstract:
In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom of monolayer GaN and form a buckling structure with a magnetic moment of 1 $μ_B$ per dopant. The N-rich growth conditions are more desirable for such a substitut…
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In this study, the structural and magnetic properties of group-IV-doped monolayer GaN were systematically investigated by first-principles calculations. Among all the group-IV dopants, only Ge and Sn atoms prefer to substitute the Ga atom of monolayer GaN and form a buckling structure with a magnetic moment of 1 $μ_B$ per dopant. The N-rich growth conditions are more desirable for such a substitution process than the Ga-rich grow conditions. With a large diffusion barrier vertical to the monolayer GaN, both Ge and Sn atoms tend to stay on the same side of monolayer GaN with an antiferromagnetic coupling between them. When intrinsic vacancies exist in monolayer GaN, the magnetic moments of group-IV dopants vanish due to the charge transferring from the dopants to Ga or N vacancies. The precondition creation of Ga vacancies, a plentiful supply of Ge or Sn dopants, and the N-rich conditions can be adopted to maintain the magnetic properties of group-IV-doped monolayer GaN. These theoretical results help to promote the applications of 2D GaN-based materials in spintronics.
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Submitted 5 April, 2023; v1 submitted 18 January, 2023;
originally announced January 2023.
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Observation of room-temperature ferroelectricity in elemental Te nanowires
Authors:
Jinlei Zhang,
Jiayong Zhang,
Yaping Qi,
Shuainan Gong,
Run Zhao,
Hongbin Yang,
Zhenping Wu,
Dapeng Cui,
Lin Wang,
Chunlan Ma,
Ju Gao,
Yong P. Chen,
Yucheng Jiang
Abstract:
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowir…
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Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowires. Out-of-plane ferroelectric loops and domain reversal are observed by piezoresponse force microscopy. Through density functional theory, we attribute the ferroelectricity to the ion-displacement created by the interlayer interaction between lone pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, supporting a self-gated field-effect transistor. It enables a nonvolatile memory with high in-plane mobility, zero supply voltage, multilevel resistive states, and a high on/off ratio. Our work provides new opportunities for elemental ferroelectrics with polar structures and paves a way towards applications such as low-power dissipation electronics and computing-in-memory devices.
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Submitted 8 November, 2022;
originally announced November 2022.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
Authors:
Angus Russell,
Alexander Zotov,
Ruichen Zhao,
Andrew S. Dzurak,
M. Fernando Gonzalez-Zalba,
Alessandro Rossi
Abstract:
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameter…
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The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and addressability via all-electric drives. However, owing to a strong spin-orbit interaction, these systems present variability and anisotropy in key qubit control parameters such as the Landé $g-$factor, requiring careful characterisation for reliable qubit operation. Here, we experimentally investigate a hole double quantum dot in silicon by carrying out spin readout with gate-based reflectometry. We show that characteristic features in the reflected phase signal arising from magneto-spectroscopy convey information on site-dependent $g-$factors in the two dots. Using analytical modeling, we extract the physical parameters of our system and, through numerical calculations, we extend the results to point out the prospect of conveniently extracting information about the local $g-$factors from reflectometry measurements.
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Submitted 17 April, 2023; v1 submitted 27 June, 2022;
originally announced June 2022.
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Inorganic Crystal Structure Prototype Database based on Unsupervised Learning of Local Atomic Environments
Authors:
Shulin Luo,
Bangyu Xing,
Muhammad Faizan,
Jiahao Xie,
Kun Zhou,
Ruoting Zhao,
Tianshu Li,
Xinjiang Wang,
Yuhao Fu,
Xin He,
Jian Lv,
Lijun Zhang
Abstract:
Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials design. The existing databases of inorganic crystal structure prototypes were mostly constructed by classifying materials in terms of the crystallographic space group information. Herein, we employed a distinct strategy to c…
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Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials design. The existing databases of inorganic crystal structure prototypes were mostly constructed by classifying materials in terms of the crystallographic space group information. Herein, we employed a distinct strategy to construct the inorganic crystal structure prototype database, relying on the classification of materials in terms of local atomic environments (LAE) accompanied by unsupervised machine learning method. Specifically, we adopted a hierarchical clustering approach onto all experimentally known inorganic crystal structures data to identify structure prototypes. The criterion for hierarchical clustering is the LAE represented by the state-of-the-art structure fingerprints of the improved bond-orientational order parameters and the smooth overlap of atomic positions. This allows us to build up a LAE-based Inorganic Crystal Structure Prototype Database (LAE-ICSPD) containing 15,613 structure prototypes with defined stoichiometries. In addition, we have developed a Structure Prototype Generator Infrastructure (SPGI) package, which is a useful toolkit for structure prototype generation. Our developed SPGI toolkit and LAE-ICSPD are beneficial for investigating inorganic materials in a global way as well as accelerating materials discovery process in the data-driven mode.
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Submitted 8 June, 2022;
originally announced June 2022.
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Metasurface electron optics in graphene
Authors:
Ruihuang Zhao,
Pengcheng Wan,
Ling Zhou,
Di Huang,
Haiqin Guo,
Hao Xia,
Junjie Du
Abstract:
For electron optics in graphene, the propagation effect has so far been the only physical mechanism available. The resulting electron-optics-based components are large in size and operate at low temperatures to avoid violating the ballistic transport limits. In this paper, Dirac fermion metasurfaces, electronic counterparts of optical metasurfaces, are introduced for graphene electronics. By a met…
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For electron optics in graphene, the propagation effect has so far been the only physical mechanism available. The resulting electron-optics-based components are large in size and operate at low temperatures to avoid violating the ballistic transport limits. In this paper, Dirac fermion metasurfaces, electronic counterparts of optical metasurfaces, are introduced for graphene electronics. By a metasurface, formally a linear array of gate-bias-controlled circular quantum dots, the wavefront of electron beams can be shaped within a one-quantum-dot-diameter distance, far below the ballistic limits at room temperature. This provides opportunities to create electron-optics-based devices that operate under ambient conditions. Moreover, unlike optical metasurfaces, Dirac fermion metasurfaces have near-perfect operating efficiencies and their high tunability allows for free and fast switching among functionalities. The concept of metasurface electron optics might open up a promising avenue for improving the performance of quantum devices in Dirac fermion materials.
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Submitted 26 April, 2022; v1 submitted 7 January, 2022;
originally announced January 2022.
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Liquid-metal/NdFeB/Sillicone Composite Elastomer with Reprogrammable Magnetization and Modulus
Authors:
Ran Zhao,
Guopeng Zhou,
Hanchen Yao,
Houde Dai
Abstract:
Magnetic programming soft machines has great development prospects in the fields of minimally invasive medicine, wearable device and soft robot. However, unrepeatable magnetization and low modulus limits their applications. So far, there are few techniques that can make magnetic soft robots have adjustable functions, mechanical and electrical properties. This paper presented a magnetic functional…
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Magnetic programming soft machines has great development prospects in the fields of minimally invasive medicine, wearable device and soft robot. However, unrepeatable magnetization and low modulus limits their applications. So far, there are few techniques that can make magnetic soft robots have adjustable functions, mechanical and electrical properties. This paper presented a magnetic functional elastomer based on liquid metal-NdFeB-Silicone composite materials. This magnetoelastomer uses the phase transition characteristics of liquid-metal and magnetic guided rotation of micro ferromagnetic particles to realize reprogrammable magnetization and modulus. The elastomer's fabrication method was given and the basic programmable properties were tested. Some robot prototypes have also been manufactured to show how to respond to different mission requirements by programming magnetization and modulus. Our research provides a new path for the design and large-scale manufacturing of magnetic soft robot.
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Submitted 28 November, 2021;
originally announced November 2021.
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Shape Programmable Magnetic Pixel Soft Robot
Authors:
Ran Zhao,
Hanchen Yao,
Houde Dai
Abstract:
Magnetic response soft robot realizes programmable shape regulation with the help of magnetic field and produces various actions. The shape control of magnetic soft robot is based on the magnetic anisotropy caused by the orderly distribution of magnetic particles in the elastic matrix. In the previous technologies, magnetic programming is coupled with the manufacturing process, and the orientation…
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Magnetic response soft robot realizes programmable shape regulation with the help of magnetic field and produces various actions. The shape control of magnetic soft robot is based on the magnetic anisotropy caused by the orderly distribution of magnetic particles in the elastic matrix. In the previous technologies, magnetic programming is coupled with the manufacturing process, and the orientation of magnetic particles cannot be modified, which brings restrictions to the design and use of magnetic soft robot. This paper presents a magnetic pixel robot with shape programmable function. By encapsulating NdFeB/gallium composites into silicone shell, a thermo-magnetic response functional film with lattice structure are fabricated. Basing on thermal-assisted magnetization technique, we realized the discrete magnetization region distribution on the film. Therefore, we proposed a magnetic coding technique to realize the mathematical response action design of software robot. Using these methods, we prepared several magnetic soft robots based on origami structure. The experiments show that the behavior mode of robot can be flexibly and repeatedly regulated by magnetic encoding technique. This work provides a basis for the programmed shape regulation and motion design of soft robot.
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Submitted 5 November, 2021; v1 submitted 31 October, 2021;
originally announced November 2021.
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Influence of long range forces on the transition states and dynamics of NaCl ion-pair dissociation in water
Authors:
Dedi Wang,
Renjie Zhao,
John D. Weeks,
Pratyush Tiwary
Abstract:
We study NaCl ion-pair dissociation in a dilute aqueous solution using computer simulations both for the full system with long range Coulomb interactions and for a well chosen reference system with short range intermolecular interactions. Analyzing results using concepts from Local Molecular Field (LMF) theory and the recently proposed AI-based analysis tool "State predictive information bottlenec…
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We study NaCl ion-pair dissociation in a dilute aqueous solution using computer simulations both for the full system with long range Coulomb interactions and for a well chosen reference system with short range intermolecular interactions. Analyzing results using concepts from Local Molecular Field (LMF) theory and the recently proposed AI-based analysis tool "State predictive information bottleneck" (SPIB) we show that the system with short range interactions can accurately reproduce the transition rate for the dissociation process, the dynamics for moving between the underlying metastable states, and the transition state ensemble. Contributions from long range interactions can be largely neglected for these processes because long range forces from the direct interionic Coulomb interactions are almost completely canceled ($>90\%$) by those from solvent interactions over the length scale where the transition takes place. Thus for this important monovalent ion-pair system, short range forces alone are able to capture detailed consequences of the collective solvent motion, allowing the use of physically suggestive and computationally efficient short range models for the disassociation event. We believe that the framework here should be applicable to disentangling mechanisms for more complex processes such as multivalent ion disassociation, where previous work has suggested that long range contributions may be more important.
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Submitted 11 October, 2021;
originally announced October 2021.
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Towards merged-element transmons using silicon fins: the FinMET
Authors:
Aranya Goswami,
Anthony P. McFadden,
Tongyu Zhao,
Hadass S. Inbar,
Jason T. Dong,
Ruichen Zhao,
Corey Rae McRae,
Raymond W. Simmonds,
Christopher J. Palmstrøm,
David P. Pappas
Abstract:
A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process…
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A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers.
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Submitted 1 July, 2022; v1 submitted 25 August, 2021;
originally announced August 2021.
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Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration
Authors:
M. H. Shao,
H. F. Liu,
R. He,
X. M. Li,
L. Wu,
J. Ma,
X. C. Hu,
R. T. Zhao,
Z. C. Zhong,
Y. Yu,
C. H. Wan,
Y. Yang,
C. -W. Nan,
X. D. Bai,
T. -L. Ren,
X. Renshaw Wang
Abstract:
Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polariz…
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Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applications. Despite tremendous efforts to explore the formation of the metastable ferroelectric phase and the polarization degradation during field cycling, the ability of oxygen vacancy to exactly engineer and switch polarization remains to be elucidated. Here we report reversibly electrochemical control of ferroelectricity in Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) heterostructures with a mixed ionic-electronic LaSrMnO$_3$ electrode, achieving a hard breakdown field more than 18 MV/cm, over fourfold as high as that of typical HZO. The electrical extraction and insertion of oxygen into HZO is macroscopically characterized and atomically imaged in situ. Utilizing this reversible process, we achieved multiple polarization states and even repeatedly repaired the damaged ferroelectricity by reversed negative electric fields. Our study demonstrates the robust and switchable ferroelectricity in hafnia oxide distinctly associated with oxygen vacancy and opens up opportunities to recover, manipulate, and utilize rich ferroelectric functionalities for advanced ferroelectric functionality to empower the existing Si-based electronics such as multi-bit storage.
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Submitted 20 June, 2021;
originally announced June 2021.
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JAMIP: an artificial-intelligence aided data-driven infrastructure for computational materials informatics
Authors:
Xin-Gang Zhao,
Kun zhou,
Bangyu Xing,
Ruoting Zhao,
Shulin Luo,
Tianshu Li,
Yuanhui Sun,
Guangren Na,
Jiahao Xie,
Xiaoyu yang,
Xinjiang Wang,
Xiaoyu Wang,
Xin He,
Jian Lv,
Yuhao Fu,
Lijun Zhang
Abstract:
Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Developing specialized facility to generate, collect, manage, learn and mine large-scale materials data is c…
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Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Developing specialized facility to generate, collect, manage, learn and mine large-scale materials data is crucial to materials informatics. We herein developed an artificial-intelligence-aided data-driven infrastructure named Jilin Artificial-intelligence aided Materials-design Integrated Package (JAMIP), which is an open-source Python framework to meet the research requirements of computational materials informatics. It is integrated by materials production factory, high-throughput first-principles calculations engine, automatic tasks submission and monitoring progress, data extraction, management and storage system, and artificial intelligence machine learning based data mining functions. We have integrated specific features such as inorganic crystal structure prototype database to facilitate high-throughput calculations and essential modules associated with machine learning studies of functional materials. We demonstrated how our developed code is useful in exploring materials informatics of optoelectronic semiconductors by taking halide perovskites as typical case. By obeying the principles of automation, extensibility, reliability and intelligence, the JAMIP code is a promisingly powerful tool contributing to the fast-growing field of computational materials informatics.
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Submitted 14 March, 2021;
originally announced March 2021.
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Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide
Authors:
H. Gu1,
F. Tang,
Y. -R. Ruan,
J. -M. Zhang,
R. -J. Tang,
W. Zhao,
R. Zhao,
L. Zhang,
Z. -D. Han,
B. Qian,
X. -F. Jiang,
Y. Fang
Abstract:
Rare-earth monopnictides are predicted to be nontrivial semimetal candidates and show pressure-induced superconductivity. Here, we grow LuBi single crystal and study the magnetization, transport behaviors and electronic band structures to reveal its topological semimetal feature and superconductivity under pressure. At 0 GPa, the quantum oscillations indicate that there are several topologically n…
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Rare-earth monopnictides are predicted to be nontrivial semimetal candidates and show pressure-induced superconductivity. Here, we grow LuBi single crystal and study the magnetization, transport behaviors and electronic band structures to reveal its topological semimetal feature and superconductivity under pressure. At 0 GPa, the quantum oscillations indicate that there are several topologically nontrivial carrier pockets around the Fermi level, among which the hole ones are isotropic in shape, while the electron ones are anisotropic and responsible for the angular magnetoresistance. Upon compression, the superconductivity emerges in the titled compound, showing a similar pressure dependence as that observed in LaBi. Our calculation suggests that the electronic band structures are robust at low- and high-pressure respectively and thus the topological features are always preserved. Besides, the nearly pressure-independent density of state in LuBi indicates that the conventional electron-phonon coupling appears to play a minor role in the superconductivity.
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Submitted 30 December, 2020;
originally announced December 2020.
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Magnetic Dynamic Polymers for Modular Assembling and Reconfigurable Morphing Architectures
Authors:
Xiao Kuang,
Shuai Wu,
Yi Jin,
Qiji Ze,
S. Macrae Montgomery,
Liang Yue,
H. Jerry Qi,
Ruike Zhao
Abstract:
Shape morphing magnetic soft materials, composed of magnetic particles in a soft polymer matrix, can transform shapes reversibly, remotely, and rapidly, finding diverse applications in actuators, soft robotics, and biomedical devices. To achieve on-demand and sophisticated shape morphing, the manufacturing of structures with complex geometry and magnetization distribution is highly desired. Here,…
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Shape morphing magnetic soft materials, composed of magnetic particles in a soft polymer matrix, can transform shapes reversibly, remotely, and rapidly, finding diverse applications in actuators, soft robotics, and biomedical devices. To achieve on-demand and sophisticated shape morphing, the manufacturing of structures with complex geometry and magnetization distribution is highly desired. Here, we report a magnetic dynamic polymer composite composed of hard-magnetic microparticles in a dynamic polymer network with thermal-responsive reversible linkages, which permit functionalities including targeted welding, magnetization reprogramming, and structural reconfiguration. These functions not only provide highly desirable structural and material programmability and reprogrammability but also enable the manufacturing of structures with complex geometry and magnetization distribution. The targeted welding is exploited for modular assembling of fundamental building modules with specific logics for complex actuation. The magnetization reprogramming enables altering the morphing mode of the manufactured structures. The shape reconfiguration under magnetic actuation is coupled with network plasticity to remotely transform two-dimensional tessellations into complex three-dimensional architectures, providing a new strategy of manufacturing functional soft architected materials such as three-dimensional kirigami. We anticipate that the reported magnetic dynamic polymer provides a new paradigm for the design and manufacturing of future multifunctional assemblies and reconfigurable morphing architectures and devices.
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Submitted 16 November, 2020;
originally announced November 2020.
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Merged-element transmon
Authors:
R. Zhao,
S. Park,
T. Zhao,
M. Bal,
C. R. H. McRae,
J. Long,
D. P. Pappas
Abstract:
Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternativ…
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Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction (JJ) and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb--amorphous-Si--Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state dependent shift in the low power regime. The device also demonstrates the single- and multi-photon transitions that represent a weakly anharmonic system in the two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. A participation ratio analysis identifies the dielectric loss of the a-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence in relatively small device dimensions when implemented using a low-loss, epitaxially-grown, and lattice-matched trilayer.
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Submitted 1 December, 2020; v1 submitted 17 August, 2020;
originally announced August 2020.
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Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
Authors:
Anthony McFadden,
Aranya Goswami,
Michael Seas,
Corey Rae H. McRae,
Ruichen Zhao,
David P. Pappas,
Christopher J. Palmstrøm
Abstract:
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconduct…
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Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
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Submitted 20 July, 2020;
originally announced July 2020.
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Magneto-Mechanical Metamaterials with Widely Tunable Mechanical Properties and Acoustic Bandgaps
Authors:
S. Macrae Montgomery,
Shuai Wu,
Xiao Kuang,
Connor D. Armstrong,
Cole Zemelka,
Qiji Ze,
Rundong Zhang,
Ruike Zhao,
H. Jerry Qi
Abstract:
Mechanical metamaterials are architected manmade materials that allow for unique behaviors not observed in nature, making them promising candidates for a wide range of applications. Existing metamaterials lack tunability as their properties can only be changed to a limited extent after the fabrication. In this paper, we present a new magneto-mechanical metamaterial that allows great tunability thr…
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Mechanical metamaterials are architected manmade materials that allow for unique behaviors not observed in nature, making them promising candidates for a wide range of applications. Existing metamaterials lack tunability as their properties can only be changed to a limited extent after the fabrication. In this paper, we present a new magneto-mechanical metamaterial that allows great tunability through a novel concept of deformation mode branching. The architecture of this new metamaterial employs an asymmetric joint design using hard-magnetic soft active materials that permits two distinct actuation modes (bending and folding) under opposite-direction magnetic fields. The subsequent application of mechanical forces leads to the deformation mode branching where the metamaterial architecture transforms into two distinctly different shapes, which exhibit very different deformations and enable great tunability in properties such as mechanical stiffness and acoustic bandgaps. Furthermore, this metamaterial design can be incorporated with magnetic shape memory polymers with global stiffness tunability, which further enables the global shift of the acoustic behaviors. The combination of magnetic and mechanical actuations, as well as shape memory effects, imbue unmatched tunable properties to a new paradigm of metamaterials.
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Submitted 22 June, 2020;
originally announced June 2020.
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Overlap junctions for superconducting quantum electronics and amplifiers
Authors:
Mustafa Bal,
Junling Long,
Ruichen Zhao,
Haozhi Wang,
Sungoh Park,
Corey Rae Harrington McRae,
Tongyu Zhao,
Russell E. Lake,
Daniil Frolov,
Roman Pilipenko,
Silvia Zorzetti,
Alexander Romanenko,
David P. Pappas
Abstract:
Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This al…
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Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap-junction-based Josephson parametric amplifier that uses only 2 layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss and a gain of ~ 30 dB. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.
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Submitted 21 May, 2020;
originally announced May 2020.
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Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control
Authors:
Amanda Seedhouse,
Tuomo Tanttu,
Ross C. C. Leon,
Ruichen Zhao,
Kuan Yen Tan,
Bas Hensen,
Fay E. Hudson,
Kohei M. Itoh,
Jun Yoneda,
Chih Hwan Yang,
Andrea Morello,
Arne Laucht,
Susan N. Coppersmith,
Andre Saraiva,
Andrew S. Dzurak
Abstract:
Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained…
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Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers.
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Submitted 13 May, 2021; v1 submitted 15 April, 2020;
originally announced April 2020.
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Second-harmonic imaging of plasmonic Pancharatnam-Berry phase metasurfaces coupled to monolayers of WS2
Authors:
Florian Spreyer,
Ruizhe Zhao,
Lingling Huang,
Thomas Zentgraf
Abstract:
The nonlinear processes of frequency conversion like second harmonic generation (SHG) usually obey certain selection rules, resulting from the preservation of different kind of physical quantities, e.g., the angular momentum. For SHG created by monolayer of transition-metal dichalcogenides (TMDCs) like WS2, the valley-exciton locked selection rule predicts an SHG signal in the cross-polarization s…
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The nonlinear processes of frequency conversion like second harmonic generation (SHG) usually obey certain selection rules, resulting from the preservation of different kind of physical quantities, e.g., the angular momentum. For SHG created by monolayer of transition-metal dichalcogenides (TMDCs) like WS2, the valley-exciton locked selection rule predicts an SHG signal in the cross-polarization state. By combining plasmonic nanostructures with a monolayer of TMDC, a hybrid metasurface is realized which affects this nonlinear process due to an additional polarization conversion process. Here, we observe that the plasmonic metasurface modifies the light-matter interaction with the TMDC resulting in an SHG signal that is co-polarized with respect to the incident field, which is usually forbidden for solely monolayers of TMDC. We fabricate such hybrid metasurfaces by placing plasmonic nanorods on top of a monolayer WS2 and study the valley-exciton locked SHG emission from such system for different parameters, such as wavelength and polarization. Furthermore, we show the potential of the hybrid metasurface for tailoring nonlinear processes by adding additional phase information to the SHG signal using the Pancharatnam-Berry phase effect. This allows direct tailoring of the SHG emission to the far-field.
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Submitted 8 April, 2020; v1 submitted 7 February, 2020;
originally announced February 2020.
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First-principle calculation of Chern number in gyrotropic photonic crystals
Authors:
Ran Zhao,
Guo-Da Xie,
Menglin L. N. Chen,
Zhihao Lan,
Zhixiang Huang,
Wei E. I. Sha
Abstract:
As an important figure of merit for characterizing the quantized collective behaviors of the wavefunction, Chern number is the topological invariant of quantum Hall insulators. Chern number also identifies the topological properties of the photonic topological insulators (PTIs), thus it is of crucial importance in PTI design. In this paper, we develop a first principle computatioal method for the…
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As an important figure of merit for characterizing the quantized collective behaviors of the wavefunction, Chern number is the topological invariant of quantum Hall insulators. Chern number also identifies the topological properties of the photonic topological insulators (PTIs), thus it is of crucial importance in PTI design. In this paper, we develop a first principle computatioal method for the Chern number of 2D gyrotropic photonic crystals (PCs), starting from the Maxwell's equations. Firstly, we solve the Hermitian generalized eigenvalue equation reformulated from the Maxwell's equations by using the full-wave finite-difference frequency-domain (FDFD) method. Then the Chern number is obtained by calculating the integral of Berry curvature over the first Brillouin zone. Numerical examples of both transverse-electric (TE) and transverse-magnetic (TM) modes are demonstrated, where convergent Chern numbers can be obtained using rather coarse grids, thus validating the efficiency and accuracy of the proposed method.
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Submitted 24 January, 2020;
originally announced January 2020.
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Chargeable photoconductivity in Van der Waals heterojunctions
Authors:
Yucheng Jiang,
Anpeng He,
Yu Chen,
Guozhen Liu,
Hao Lu,
Run Zhao,
Mingshen Long,
Ju Gao,
Quanying Wu,
Xiaotian Ge,
Jiqiang Ning,
Weida Hu
Abstract:
Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demo…
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Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat; in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices.
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Submitted 14 January, 2020;
originally announced January 2020.
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High temperature annealing enhanced diamond 13C hyperpolarization at room temperature
Authors:
M. Gierth,
V. Krespach,
A. I. Shames,
P. Raghavan,
E. Druga,
N. Nunn,
M. Torelli,
R. Nirodi,
S. Le,
R. Zhao,
A. Aguilar,
X. Lv,
M. Shen,
C. A. Meriles,
J. A. Reimer,
A. Zaitsev,
A. Pines,
O. Shenderova,
A. Ajoy
Abstract:
Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects comp…
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Methods of optical dynamic nuclear polarization (DNP) open the door to the replenishable hyperpolarization of nuclear spins, boosting their NMR/MRI signature by orders of magnitude. Nanodiamond powder rich in negatively charged Nitrogen Vacancy (NV) defect centers has recently emerged as one such promising platform, wherein 13C nuclei can be hyperpolarized through the optically pumped defects completely at room temperature and at low magnetic fields. Given the compelling possibility of relaying this 13C polarization to nuclei in external liquids, there is an urgent need for the engineered production of highly "hyperpolarizable" diamond particles. In this paper, we report on a systematic study of various material dimensions affecting optical 13C hyperpolarization in diamond particles -- especially electron irradiation and annealing conditions that drive NV center formation. We discover surprisingly that diamond annealing at elevated temperatures close to 1720C have remarkable effects on the hyperpolarization levels, enhancing them by upto 36-fold over materials annealed through conventional means. We unravel the intriguing material origins of these gains, and demonstrate they arise from a simultaneous improvement in NV electron relaxation time and coherence time, as well as the reduction of paramagnetic content, and an increase in 13C relaxation lifetimes. Overall this points to significant recovery of the diamond lattice from radiation damage as a result of the high-temperature annealing. Our work suggests methods for the guided materials production of fluorescent, 13C hyperpolarized, nanodiamonds and pathways for their use as multi-modal (optical and MRI) imaging and hyperpolarization agents.
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Submitted 8 November, 2019;
originally announced November 2019.
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Core-level x-ray photoemission and Raman spectroscopy studies on electronic structures in Mott-Hubbard type nickelate oxide NdNiO$_2$
Authors:
Ying Fu,
Le Wang,
Hu Cheng,
Shenghai Pei,
Xuefeng Zhou,
Jian Chen,
Shaoheng Wang,
Ran Zhao,
Wenrui Jiang,
Cai Liu,
Mingyuan Huang,
XinWei Wang,
Yusheng Zhao,
Dapeng Yu,
Fei Ye,
Shanmin Wang,
Jia-Wei Mei
Abstract:
We perform core-level X-ray photoemission spectroscopy (XPS) and electronic Raman scattering studies of electronic structures and spin fluctuations in the bulk samples of the nickelate oxide NdNiO$_2$. According to Nd $3d$ and O $1s$ XPS spectra, we conclude that NdNiO$_2$ has a large transfer energy. From the analysis of the main line of the Ni $2p_{3/2}$ XPS, we confirm the NiO$_2$ planes in NdN…
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We perform core-level X-ray photoemission spectroscopy (XPS) and electronic Raman scattering studies of electronic structures and spin fluctuations in the bulk samples of the nickelate oxide NdNiO$_2$. According to Nd $3d$ and O $1s$ XPS spectra, we conclude that NdNiO$_2$ has a large transfer energy. From the analysis of the main line of the Ni $2p_{3/2}$ XPS, we confirm the NiO$_2$ planes in NdNiO$_2$ are of Mott-Hubbard type in the Zaanen-Sawatzky-Allen scheme. The two-magnon peak in the Raman scattering provides direct evidence for the strong spin-fluctuation in NdNiO$_2$. The peak position determines the antiferromagnetic exchange $J=25$~meV. Our experimental results agree well with our previous theoretical results.
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Submitted 22 March, 2020; v1 submitted 8 November, 2019;
originally announced November 2019.
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Superconducting charge sensor coupled to an electron layer in silicon
Authors:
Máté Jenei,
Ruichen Zhao,
Kuan Y. Tan,
Tuomo Tanttu,
Kok W. Chan,
Yuxin Sun,
Vasilii Sevriuk,
Fay Hudson,
Alessandro Rossi,
Andrew Dzurak,
Mikko Möttönen
Abstract:
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as a…
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Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as an additional gate electrode. We study the reliability of the electron sensor in different device configurations and the suitability of various operation modes for error detection in electron pumping experiments. As a result, we obtain a charge detection bandwidth of 5.87 kHz with unity signal to noise ratio at 300 mK bath temperature.
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Submitted 26 September, 2019;
originally announced September 2019.
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Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
Authors:
Máté Jenei,
Elina Potanina,
Ruichen Zhao,
Kuan Y. Tan,
Alessandro Rossi,
Tuomo Tanttu,
Kok W. Chan,
Vasilii Sevriuk,
Mikko Möttönen,
Andrew Dzurak
Abstract:
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that of electron transport in a quantum dot with two charge states, and hence we refer to it as a two-level fluctuator. By constructing the distribution of waiting times from the measured detector signal and comparing it with…
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We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that of electron transport in a quantum dot with two charge states, and hence we refer to it as a two-level fluctuator. By constructing the distribution of waiting times from the measured detector signal and comparing it with a waiting time theory, we extract the electron in- and out-tunneling rates for the two-level fluctuator, which are severely asymmetric.
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Submitted 13 September, 2019; v1 submitted 6 September, 2019;
originally announced September 2019.
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Single-spin qubits in isotopically enriched silicon at low magnetic field
Authors:
R. Zhao,
T. Tanttu,
K. Y. Tan,
B. Hensen,
K. W. Chan,
J. C. C. Hwang,
R. C. C. Leon,
C. H. Yang,
W. Gilbert,
F. E. Hudson,
K. M. Itoh,
A. A. Kiselev,
T. D. Ladd,
A. Morello,
A. Laucht,
A. S. Dzurak
Abstract:
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) rea…
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Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$μ$s and $T_2^*=1.4$~$μ$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
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Submitted 23 August, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Ultrabroadband photosensitivity from visible to terahertz at room temperature
Authors:
Dong Wu,
Y. C. Ma,
Y. Y. Niu,
Q. M. Liu,
Tao Dong,
S. J. Zhang,
J. S. Niu,
H. B. Zhou,
Jian Wei,
Y. X. Wang,
Z. R. Zhao,
N. L. Wang
Abstract:
Charge-density wave (CDW) is one of the most fundamental quantum phenomena in solids. Different from ordinary metals in which only single particle excitations exist, CDW also has collective excitations and can carry electric current in a collective fashion. Manipulating this collective condensation for applications has long been a goal in the condensed matter and materials community. Here we show…
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Charge-density wave (CDW) is one of the most fundamental quantum phenomena in solids. Different from ordinary metals in which only single particle excitations exist, CDW also has collective excitations and can carry electric current in a collective fashion. Manipulating this collective condensation for applications has long been a goal in the condensed matter and materials community. Here we show that the CDW system of 1T-TaS2 is highly sensitive to light directly from visible down to terahertz, with current responsivities around the order of ~1 AW-1 at room temperature. Our findings open a new avenue for realizing uncooled, ultrabroadband and sensitive photoelectronics continuously down to terahertz spectral range.
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Submitted 23 June, 2018;
originally announced June 2018.
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Interlocking mechanism between molecular gears attached to surfaces
Authors:
Rundong Zhao,
Yan-Ling Zhao,
Fei Qi,
Klaus Hermann,
Rui-Qin Zhang,
Michel A. Van Hove
Abstract:
While molecular machines play an increasingly significant role in nanoscience research and applications, there remains a shortage of investigations and understanding of the molecular gear (cogwheel), which is an indispensable and fundamental component to drive a larger correlated molecular machine system. Employing ab initio calculations, we investigate model systems consisting of molecules adsorb…
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While molecular machines play an increasingly significant role in nanoscience research and applications, there remains a shortage of investigations and understanding of the molecular gear (cogwheel), which is an indispensable and fundamental component to drive a larger correlated molecular machine system. Employing ab initio calculations, we investigate model systems consisting of molecules adsorbed on metal or graphene surfaces, ranging from very simple triple-arm gears such as PF3 and NH3 to larger multi-arm gears based on carbon rings. We explore in detail the transmission of slow rotational motion from one gear to the next by these relatively simple molecules, so as to isolate and reveal the mechanisms of the relevant intermolecular interactions. Several characteristics of molecular gears are discussed, in particular the flexibility of the arms and the slipping and skipping between interlocking arms of adjacent gears, which differ from familiar macroscopic rigid gears. The underlying theoretical concepts suggest strongly that other analogous structures may also exhibit similar behavior which may inspire future exploration in designing large correlated molecular machines.
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Submitted 6 February, 2018;
originally announced February 2018.
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Overlap of two topological phases in the antiferromagnetic Potts model
Authors:
Ran Zhao,
Chengxiang Ding,
Youjin Deng
Abstract:
By controlling the vortex core energy, the three-state ferromagnetic Potts model can exhibit two types of topological paradigms, including the quasi-long-range ordered phase and the vortex lattice phase [PRL 116, 097206 (2016)]. Here, by Monte Carlo simulations using an effective worm algorithm, we show that by controlling the vortex core energy, the antiferromagnetic Potts model can also exhibit…
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By controlling the vortex core energy, the three-state ferromagnetic Potts model can exhibit two types of topological paradigms, including the quasi-long-range ordered phase and the vortex lattice phase [PRL 116, 097206 (2016)]. Here, by Monte Carlo simulations using an effective worm algorithm, we show that by controlling the vortex core energy, the antiferromagnetic Potts model can also exhibit the two topological phases, more interestingly, the two topological phases can overlap with each other.
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Submitted 24 May, 2018; v1 submitted 13 November, 2017;
originally announced November 2017.
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Gas Eruption Phenomenon Happening from Ga-In Alloy in Electrolyte
Authors:
Ruiqi Zhao,
Hongzhang Wang,
Jianbo Tang,
Wei Rao,
Jing Liu
Abstract:
We report a gas eruption phenomenon caused by electrolysis of liquid Ga-In alloy in an electrolyte, especially NaOH solution. A volcanic eruption-like blowout of gas occurred from the orifice on the alloy surface. In addition to gas plume, large gas bubbles were also generated and the total gas yield increased as In ratio was increased. It is found that destructiveness of the passivation layer on…
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We report a gas eruption phenomenon caused by electrolysis of liquid Ga-In alloy in an electrolyte, especially NaOH solution. A volcanic eruption-like blowout of gas occurred from the orifice on the alloy surface. In addition to gas plume, large gas bubbles were also generated and the total gas yield increased as In ratio was increased. It is found that destructiveness of the passivation layer on the Ga-In alloy is critical to gas generation. The mechanism of gas eruption can be ascribed to a galvanic interaction happens owing to passivation film and alloy with different activity connected as electrode in electrolyte. Further investigation demonstrated that the lattice of the film expands because of the incorporation of indium, which brings about the decrease in band gap and finally enhances more gas generation. These findings regain the basic understanding of room temperature liquid metal inside electrolyte.
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Submitted 17 October, 2017;
originally announced October 2017.
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Mid-infrared Plasmonic Circular Dichroism Generated by Graphene Nanodisk Assemblies
Authors:
Xiang-Tian Kong,
Runbo Zhao,
Zhiming Wang,
Alexander O. Govorov
Abstract:
It is very interesting to bring plasmonic circular dichroism spectroscopy to the mid-infrared spectral interval, and there are two reasons for this. This spectral interval is very important for thermal bio-imaging and, simultaneously, this spectral range includes vibrational lines of many chiral biomolecules. Here we demonstrate that graphene plasmons indeed offer such opportunity. In particular,…
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It is very interesting to bring plasmonic circular dichroism spectroscopy to the mid-infrared spectral interval, and there are two reasons for this. This spectral interval is very important for thermal bio-imaging and, simultaneously, this spectral range includes vibrational lines of many chiral biomolecules. Here we demonstrate that graphene plasmons indeed offer such opportunity. In particular, we show that chiral graphene assemblies consisting of a few graphene nanodisks can generate strong circular dichroism (CD) in the mid-infrared interval. The CD signal is generated due to the plasmon-plasmon coupling between adjacent nanodisks in the specially designed chiral graphene assemblies. Because of the large dimension mismatch between the thickness of a graphene layer and the incoming light's wavelength, three-dimensional configurations with a total height of a few hundred nanometers are necessary to obtain a strong CD signal in the mid-infrared range. The mid-infrared CD strength is mainly governed by the total dimensions (total height and helix scaffold radius) of the graphene nanodisk assembly, and by the plasmon-plasmon interaction strength between its constitutive nanodisks. Both positive and negative CD bands can be observed in the graphene assembly array. The frequency interval of the plasmonic CD spectra overlaps with the vibrational modes of some important biomolecules, such as DNA and many different peptides, giving rise to the possibility of enhancing the vibrational optical activity of these molecular species by attaching them to the graphene assemblies. Simultaneously the spectral range of chiral mid-infrared plasmons in our structures appears near the typical wavelength of the human-body thermal radiation and, therefore, our chiral metastructures can be potentially utilized as optical components in thermal imaging devices.
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Submitted 7 September, 2017;
originally announced September 2017.
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Manipulating Multiple Order Parameters via Oxygen Vacancies: The case of Eu0.5Ba0.5TiO3-δ
Authors:
Weiwei Li,
Qian He,
Le Wang,
Huizhong Zeng,
John Bowlan,
Langsheng Ling,
Dmitry A. Yarotski,
Wenrui Zhang,
Run Zhao,
Jiahong Dai,
Junxing Gu,
Shipeng Shen,
Haizhong Guo,
Li Pi,
Haiyan Wang,
Yongqiang Wang,
Ivan A. Velasco-Davalos,
Yangjiang Wu,
Zhijun Hu,
Bin Chen,
Run-Wei Li,
Young Sun,
Kuijuan Jin,
Yuheng Zhang,
Hou-Tong Chen
, et al. (5 additional authors not shown)
Abstract:
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combin…
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Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their impact on mainly one order parameter. Here we reveal a new mechanism for tuning both magnetism and ferroelectricity simultaneously by using VO. Combined experimental and density-functional theory studies of Eu0.5Ba0.5TiO3-δ, we demonstrate that oxygen vacancies create Ti3+ 3d1 defect states, mediating the ferromagnetic coupling between the localized Eu 4f7 spins, and increase an off-center displacement of Ti ions, enhancing the ferroelectric Curie temperature. The dual function of Ti sites also promises a magnetoelectric coupling in the Eu0.5Ba0.5TiO3-δ.
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Submitted 28 August, 2017;
originally announced August 2017.
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Ultrasound attenuation in $s^\pm$-wave two-band superconductors
Authors:
Runzhong Zhao,
Biao Jin
Abstract:
The two-band $s^{\pm}$-wave state is currently considered to be the most promising candidate for newly discovered iron-based high-$T_c$ superconductors. In this work we study theoretically the ultrasound attenuation in $s^{\pm}$-wave two-band superconductors. The impurity effect is calculated within the $\mathcal{T}$-matrix approximation. In particular, our theory predict that, when the sizes of t…
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The two-band $s^{\pm}$-wave state is currently considered to be the most promising candidate for newly discovered iron-based high-$T_c$ superconductors. In this work we study theoretically the ultrasound attenuation in $s^{\pm}$-wave two-band superconductors. The impurity effect is calculated within the $\mathcal{T}$-matrix approximation. In particular, our theory predict that, when the sizes of two order parameter are comparable, a Hebel-Slichter peak may show up in the ultrasound attenuation versus temperature curves. Our calculations also confirmed the presence of the resonant impurity scattering at low temperature, observed previously by other authors in the calculation of the NMR relaxation rate $1/T_{1}$.
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Submitted 9 June, 2017;
originally announced June 2017.
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Thermal-error regime in high-accuracy gigahertz single-electron pumping
Authors:
R. Zhao,
A. Rossi,
S. P. Giblin,
J. D. Fletcher,
F. E. Hudson,
M. Möttönen,
M. Kataoka,
A. S. Dzurak
Abstract:
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime wher…
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Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{$1$-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of $ef$ within a measurement uncertainty as low as $0.27$~ppm.
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Submitted 13 November, 2017; v1 submitted 14 March, 2017;
originally announced March 2017.
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Generalized thermoelastic band structures of Rayleigh wave in one-dimensional phononic crystals
Authors:
Ying Wu,
Kaiping Yu,
Linyun Yang,
Haotian Zhou,
Rui Zhao
Abstract:
We investigate generalized band structures of Rayleigh wave in 1-D phononic crystals in the context of Green-Nagdhi thermoelastic (TE) theory. Solutions of the coupled equations included thermal field are obtained firstly. Then according to boundary conditions, phase velocity is derived. The transfer matrix methodology is adopted in order to formulate the band structures of generalized TE Rayleigh…
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We investigate generalized band structures of Rayleigh wave in 1-D phononic crystals in the context of Green-Nagdhi thermoelastic (TE) theory. Solutions of the coupled equations included thermal field are obtained firstly. Then according to boundary conditions, phase velocity is derived. The transfer matrix methodology is adopted in order to formulate the band structures of generalized TE Rayleigh wave. It is demonstrated that the band structure of TE Rayleigh wave is comprised of elastic and thermal bands. For Aluminum-Epoxy phononic crystal, the thermoelasticity can influence the transmission ability of band gaps as well as narrow down the band gap width.
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Submitted 23 January, 2017;
originally announced January 2017.
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Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
Authors:
A. Rossi,
R. Zhao,
A. S. Dzurak,
M. F. Gonzalez-Zalba
Abstract:
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we per…
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Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.
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Submitted 23 May, 2017; v1 submitted 3 October, 2016;
originally announced October 2016.
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Permeability and kinetic coefficients for mesoscale BCF surface step dynamics: discrete 2D deposition-diffusion equation analysis
Authors:
R. Zhao,
J. W. Evans,
T. J. Oliveira
Abstract:
A discrete version of deposition-diffusion equations appropriate for description of step flow on a vicinal surface is analyzed for a two-dimensional grid of adsorption sites representing the stepped surface and explicitly incorporating kinks along the step edges. Model energetics and kinetics appropriately account for binding of adatoms at steps and kinks, distinct terrace and edge diffusion rates…
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A discrete version of deposition-diffusion equations appropriate for description of step flow on a vicinal surface is analyzed for a two-dimensional grid of adsorption sites representing the stepped surface and explicitly incorporating kinks along the step edges. Model energetics and kinetics appropriately account for binding of adatoms at steps and kinks, distinct terrace and edge diffusion rates, and possibly asymmetric barriers for attachment to steps. Analysis of adatom attachment fluxes as well as limiting values of adatom densities at step edges for non-uniform deposition scenarios allows determination of both permeability and kinetic coefficients. Behavior of these quantities is assessed as a function of key system parameters including kink density, step attachment barriers, and the step edge diffusion rate.
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Submitted 21 March, 2016; v1 submitted 16 December, 2015;
originally announced December 2015.
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Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering
Authors:
Oliver R. Albertini,
Rui Zhao,
Rebecca L. McCann,
Simin Feng,
Mauricio Terrones,
James K. Freericks,
Joshua A. Robinson,
Amy Y. Liu
Abstract:
We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS$_2$ for various thicknesses in the high-temperature (undistorted) phase and the low-temperature commensurate charge density wave (CDW) phase. We also present measurements of the Raman spectra for bulk, few-layer, and monolayer samples at temperatures well below that of the bulk tran…
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We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS$_2$ for various thicknesses in the high-temperature (undistorted) phase and the low-temperature commensurate charge density wave (CDW) phase. We also present measurements of the Raman spectra for bulk, few-layer, and monolayer samples at temperatures well below that of the bulk transition to the commensurate phase. Through our calculations, we identify the low-frequency folded-back acoustic modes as a convenient signature of the commensurate CDW wave structure in vibrational spectra. In our measured Raman spectra, this signature is clearly evident in all of the samples, indicating that the commensurate phase remains the ground state as the material is thinned, even down to a single layer. This is in contrast to some previous studies which suggest a suppression of the commensurate CDW transition in thin flakes. We also use polarized Raman spectroscopy to probe c-axis orbital texture in the low-T phase, which has recently been suggested as playing a role in the metal-insulator transition that accompanies the structural transition to the commensurate CDW phase.
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Submitted 2 June, 2016; v1 submitted 13 November, 2015;
originally announced November 2015.
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Scaling of liquid-drop impact craters in wet granular media
Authors:
Qianyun Zhang,
Ming Gao,
Runchen Zhao,
Xiang Cheng
Abstract:
Combining high-speed photography with laser profilometry, we study the dynamics and the morphology of liquid-drop impact cratering in wet granular media---a ubiquitous phenomenon relevant to many important geological, agricultural, and industrial processes. By systematically investigating important variables such as impact energy, the size of impinging drops and the degree of liquid saturation in…
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Combining high-speed photography with laser profilometry, we study the dynamics and the morphology of liquid-drop impact cratering in wet granular media---a ubiquitous phenomenon relevant to many important geological, agricultural, and industrial processes. By systematically investigating important variables such as impact energy, the size of impinging drops and the degree of liquid saturation in granular beds, we uncover a novel scaling for the size of impact craters. We show that this scaling can be explained by considering the balance between the inertia of impinging drops and the strength of impacted surface. Such a theoretical understanding confirms that the unique energy partition originally proposed for liquid-drop impact cratering in dry granular media also applies for impact cratering in wet granular media. Moreover, we demonstrate that compressive stresses, instead of shear stresses, control granular impact cratering. Our study enriches the picture of generic granular impact cratering and sheds light on the familiar phenomena of raindrop impacts in granular media.
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Submitted 27 October, 2015;
originally announced October 2015.
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A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Authors:
Wendy E. Purches,
Alessandro Rossi,
Ruichen Zhao,
Sergey Kafanov,
Timothy L. Duty,
Andrew S. Dzurak,
Sven Rogge,
Giuseppe C. Tettamanzi
Abstract:
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and cha…
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Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
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Submitted 9 August, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.