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Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V
Authors:
Xiaoyu Yan,
Pengfei Zhai,
Chen Yang,
Shiwei Zhao,
Shuai Nan,
Peipei Hu,
Teng Zhang,
Qiyu Chen,
Lijun Xu,
Zongzhen Li,
Jie Liu
Abstract:
Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this letter, high-resoluti…
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Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)-semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti-SiC interface induced by localized Joule heating is responsible for the amorphization and the formation of titanium silicide, titanium carbide, or ternary phases. These modifications at nanoscale in turn cause the localized degradation of the Schottky contact, resulting in the permanent increase in leakage current. This experimental study provides very valuable clues to thorough understanding of the SELC mechanism in SiC diode.
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Submitted 7 March, 2024; v1 submitted 26 October, 2023;
originally announced October 2023.
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Excellent HER and OER Catalyzing Performance of Se-vacancies in Defects-engineering PtSe2: From Simulation to Experiment
Authors:
Yuan Chang,
Panlong Zhai,
Jungang Hou,
Jijun Zhao,
Junfeng Gao
Abstract:
Facing with grave climate change and enormous energy demand, catalyzer gets more and more important due to its significant effect on reducing fossil fuels consumption. Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here we systematically explored atomic structures and related STM images of Se defects i…
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Facing with grave climate change and enormous energy demand, catalyzer gets more and more important due to its significant effect on reducing fossil fuels consumption. Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here we systematically explored atomic structures and related STM images of Se defects in PtSe2. The equilibrium fractions of vacancies under variable conditions were detailly predicted. Besides, we found the vacancies are highly kinetic stable, without recovering or aggregation. The Se vacancies in PtSe2 can dramatically enhance the HER performance, comparing with, even better than Pt(111). Beyond, we firstly revealed that PtSe2 monolayer with Se vacancies is also a good OER catalyst. The excellent bipolar catalysis of Se vacancies were further confirmed by experimental measurements. We produced defective PtSe2 by direct selenization of Pt foil at 773 K using a CVD process. Then we observed the HER and OER performance of defective PtSe2 is much highly efficient than Pt foils by a series of measurements. Our work with compelling theoretical and experimental studies indicates PtSe2 with Se defects is an ideal bipolar candidate for HER and OER.
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Submitted 6 September, 2023;
originally announced September 2023.
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Degradiation of $β$-Ga$_2$O$_3$ Schottky barrier diode under swift heavy ion irradiation
Authors:
Wen-Si Ai,
Jie Liu,
Qian Feng,
Peng-Fei Zhai,
Pei-Pei Hu,
Jian Zeng,
Sheng-Xia Zhang,
Zong-Zhen Li,
Li Liu,
Xiao-Yu Yan,
You-Mei Sun
Abstract:
The electrical characteristics and microstructures of $β$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $β$-Ga$_2$O$_3$ SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n and the reverse leakage current density Jr. In additio…
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The electrical characteristics and microstructures of $β$-Ga$_2$O$_3$ Schottky barrier diode (SBD) devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found that $β$-Ga$_2$O$_3$ SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5*106 - 1.3*107 cm-1. Latent tracks induced by swift heavy ions were observed visually in the whole $β$-Ga$_2$O$_3$ matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually, these defects caused the degradation of electrical characteristics of the devices. By comparing the carrier removal rates, the $β$-Ga$_2$O$_3$ SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
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Submitted 24 March, 2021;
originally announced March 2021.
