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Spectrally stable nitrogen-vacancy centers in diamond formed by carbon implantation into thin microstructures
Authors:
V. Yurgens,
A. Corazza,
J. A. Zuber,
M. Gruet,
M. Kasperczyk,
B. J. Shields,
R. J. Warburton,
Y. Fontana,
P. Maletinsky
Abstract:
The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks. Employing photonic structures for maximizing the photon collection efficiency in these applications typically leads to broadened optical linewidths for the emitters, w…
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The nitrogen-vacancy center (NV) in diamond, with its exceptional spin coherence and convenience in optical spin initialization and readout, is increasingly used both as a quantum sensor and as a building block for quantum networks. Employing photonic structures for maximizing the photon collection efficiency in these applications typically leads to broadened optical linewidths for the emitters, which are commonly created via nitrogen ion implantation. With studies showing that only native nitrogen atoms contribute to optically coherent NVs, a natural conclusion is to either avoid implantation completely, or substitute nitrogen implantation by an alternative approach to vacancy creation. Here, we demonstrate that implantation of carbon ions yields a comparable density of NVs as implantation of nitrogen ions, and that it results in NV populations with narrow optical linewidths and low charge-noise levels even in thin diamond microstructures. We measure a median NV linewidth of 150 MHz for structures thinner than 5 $μ$m, with no trend of increasing linewidths down to the thinnest measured structure of 1.9 $μ$m. We propose a modified NV creation procedure in which the implantation is carried out after instead of before the diamond fabrication processes, and confirm our results in multiple samples implanted with different ion energies and fluences.
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Submitted 5 December, 2022; v1 submitted 16 September, 2022;
originally announced September 2022.
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Low charge-noise nitrogen-vacancy centers in diamond created using laser writing with a solid-immersion lens
Authors:
Viktoria Yurgens,
Josh A. Zuber,
Sigurd Flågan,
Marta De Luca,
Brendan J. Shields,
Ilaria Zardo,
Patrick Maletinsky,
Richard J. Warburton,
Tomasz Jakubczyk
Abstract:
We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tu…
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We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization. We present three samples in which NV-center arrays were laser-written at distances between ~1 $μ$m and 40 $μ$m from a diamond surface, all presenting narrow distributions of optical linewidths with means between 62.1 MHz and 74.5 MHz. The linewidths include the effect of long-term spectral diffusion induced by a 532 nm repump laser for charge-state stabilization, thereby emphasizing the particularly low charge-noise environment of the created color centers. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV center optical linewidth.
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Submitted 11 August, 2021; v1 submitted 23 February, 2021;
originally announced February 2021.
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Statistically Modeling Optical Linewidths of Nitrogen Vacancy Centers in Post-Implanted Nanostructures
Authors:
Mark Kasperczyk,
Josh A. Zuber,
Arne Barfuss,
Johannes Kölbl,
Viktoria Yurgens,
Sigurd Flågan,
Tomasz Jakubczyk,
Brendan Shields,
Richard J. Warburton,
Patrick Maletinsky
Abstract:
We investigate the effects of a novel approach to diamond nanofabrication and nitrogen vacancy (NV) center formation on the optical linewidth of the NV zero-phonon line (ZPL). In this post-implantation method, nitrogen is implanted after all fabrication processes have been completed. We examine three post-implanted samples, one implanted with $^{14}$N and two with $^{15}$N isotopes. We perform pho…
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We investigate the effects of a novel approach to diamond nanofabrication and nitrogen vacancy (NV) center formation on the optical linewidth of the NV zero-phonon line (ZPL). In this post-implantation method, nitrogen is implanted after all fabrication processes have been completed. We examine three post-implanted samples, one implanted with $^{14}$N and two with $^{15}$N isotopes. We perform photoluminescence excitation (PLE) spectroscopy to assess optical linewidths and optically detected magnetic resonance (ODMR) measurements to isotopically classify the NV centers. From this, we find that NV centers formed from nitrogen naturally occuring in the diamond lattice are characterized by a linewidth distribution peaked at an optical linewidth nearly two orders of magnitude smaller than the distribution characterizing most of the NV centers formed from implanted nitrogen. Surprisingly, we also observe a number of $^{15}$NV centers with narrow ($<500\,\mathrm{MHz}$) linewidths, implying that implanted nitrogen can yield NV centers with narrow optical linewidths. We further use a Bayesian approach to statistically model the linewidth distributions, to accurately quantify the uncertainty of fit parameters in our model, and to predict future linewidths within a particular sample. Our model is designed to aid comparisons between samples and research groups, in order to determine the best methods of achieving narrow NV linewidths in structured samples.
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Submitted 21 September, 2020; v1 submitted 7 May, 2020;
originally announced May 2020.
