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Multi-interface engineering to realize all-solution processed highly efficient Kesterite solar cells
Authors:
Licheng Lou,
Kang Yin,
Jinlin Wang,
Yuan Li,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Shudan Chen,
Tan Guo,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/A…
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With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/Ag nanowires. A multi-interface engineering strategy assisted by organic polymers and molecules is explored to synergistically improve the film deposition, passivate the surface defects and facilitate the charge transfer. These efforts help us achieve high-performance and robust Kesterite solar cells at extremely low time and energy costs, with efficiency records of 14.37% and 13.12% being realized in rigid and flexible Kesterite solar cells, respectively. Our strategy here is also promising to be transplanted into other solar cells with similar geometric and energy band structures, helping reduce production costs and shorten the production cycle (i.e. increasing production capacity) of these photovoltaic industries.
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Submitted 10 April, 2024;
originally announced April 2024.
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Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells
Authors:
Jinlin Wang,
Licheng Lou,
Kang Yin,
Fanqi Meng,
Xiao Xu,
Menghan Jiao,
Bowen Zhang,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and sev…
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Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and severe charge loss, while its regulation remains challenging due to the contradiction between disorder-order phase transition thermodynamics and atom-interchange kinetics. Herein, through introducing more vacancies in the CZTSSe surface, we explored a vacancy-assisted strategy to reduce the atom-interchange barrier limit to facilitate the Cu-Zn ordering kinetic process. The improvement in the Cu-Zn order degree has significantly reduced the charge loss in the device and helped us realize 15.4% (certified at 14.9%) and 13.5% efficiency (certified at 13.3%) in 0.27 cm2 and 1.1 cm2-area CZTSSe solar cells, respectively, thus bringing substantial advancement for emerging inorganic thin-film photovoltaics.
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Submitted 8 April, 2024;
originally announced April 2024.
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Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV
Authors:
Kang Yin,
Jinlin Wang,
Licheng Lou,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Jiangjian Shi,
Dongmei Li,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in contr…
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Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell.
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Submitted 30 March, 2024;
originally announced April 2024.
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Defect Regulation by Palladium Incorporation towards Grain Boundaries of Kesterite solar cells
Authors:
Jinlin Wang,
Jiangjian Shi,
Kang Yin,
Fanqi Meng,
Shanshan Wang,
Licheng Lou,
Jiazheng Zhou,
Xiao Xu,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Shiyou Chen,
Qingbo Meng
Abstract:
Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as V…
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Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as VSn and VSe in GBs of the Kesterite absorbers. We demonstrate that PdSex compounds could form during the selenization process and distribute at the GBs and the absorber surfaces; thereby aid in the suppression of Sn and Se volatilization loss and inhibiting the formation of VSn and VSe defects. Furthermore, Pd(II)/Pd(IV) serves as a redox shuttle, i.e., on one hand, Pd(II) captures Se vapor from the reaction environment to produce PdSe2, on the other hand, PdSe2 provides Se atoms to the Kesterite absorber by being reduced to PdSe, thus contributing to the elimination of pre-existing VSe defects within GBs. These effects collectively reduce defects and enhance the p-type characteristics of the Kesterite absorber, leading to a significant reduction in charge recombination loss within the cell. As a result, high-performance Kesterite solar cells with a total-area efficiency of 14.5% have been achieved. This remarkable efficiency increase benefited from the redox reaction strategy offers a promising avenue for the precise regulation of defects in Kesterite solar cells and holds generally significant implications for the exploration of various other photovoltaic devices.
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Submitted 7 November, 2023;
originally announced November 2023.
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Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells
Authors:
Jiangjian Shi,
Jinlin Wang,
Fanqi Meng,
Jiazheng Zhou,
Xiao Xu,
Kang Yin,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex…
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The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex defects and charge losses. To overcome these limitations and improve the efficiency of CZTSSe solar cells, it is crucial to experimentally identify and mitigate deep defects. In this study, we reveal that the dominant deep defect in CZTSSe materials exhibits donor characteristics. We propose that incomplete cation exchange during the multi-step crystallization reactions of CZTSSe is the kinetics mechanism responsible for the defect formation. To address this issue, we introduce an elemental synergistic alloying approach aimed at weakening the metal-chalcogen bond strength and the stability of intermediate phases. This alloying strategy has facilitated the kinetics of cation exchange, leading to a significant reduction in charge losses within the CZTSSe absorber. As a result, we have achieved a cell efficiency of over 14.5%. These results represent a significant advancement for emerging inorganic solar cells and additionally bring more opportunities for the precise identification and regulation of defects in a wider range of multinary inorganic compounds.
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Submitted 26 June, 2023;
originally announced June 2023.
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Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
Jinlin Wang,
Licheng Lou,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strate…
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Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strategy to simultaneously regulate the CZTSSe film surface properties and the CdS chemical bath deposition (CBD) processes. Material and chemical characterization reveals that Rb ions can passivate the detrimental Se0 cluster defect and additionally provide a more active surface for the CdS epitaxial growth. Furthermore, Rb can also coordinate with thiourea (TU) in the CBD solution and improve the ion-by-ion deposition of the CdS layer. Finally, the flexible CZTSSe cell fabricated by this strategy has reached a high total-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOC and FF reaching 538 mV and 0.70, respectively. This work enriches the alkali metal passivation strategies and provides new ideas for further improving flexible CZTSSe solar cells in the future.
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Submitted 10 May, 2023;
originally announced May 2023.
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Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
Jinlin Wang,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-seleniz…
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Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-selenization is dependent on various factors (e.g. temperature, precursor composition, reaction atmosphere, etc).However, synergistic regulation of these factors cannot be realized under a widely-used single-temperature zone selenization condition.Here, in our dual-temperature zone selenization scheme, a solid-liquid and solid-gas (solid precursor and liquid/gas phase Se) synergistic reaction strategy has been developed to precisely regulate the selenization. Pre-deposited excess liquid Se provides high Se chemical potential to drive a direct and fast formation of the CZTSSe phase, significantly reducing the amount of binary and ternary compounds within phase evolution. And organics removal can be accomplished via a synergistic optimization of Se condensation and subsequent volatilization. We achieve a high-performance CZTSSe solar cell with a remarkable PCE of 13.6%, and the highest large-area PCE of 12.0% (over 1cm2). Our strategy will provide a new idea for further improving efficiency of CZTSSe solar cells via phase evolution regulation, and also for other complicated multi-compound synthesis.
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Submitted 4 March, 2023;
originally announced March 2023.
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A precisely regulating phase evolution strategy for highly efficient kesterite solar cells
Authors:
Jiazheng Zhou,
Xiao Xu,
Huijue Wu,
Jinlin Wang,
Licheng Lou,
Kang Yin,
Yuancai Gong,
Jiangjian Shi,
Yanhong Luo,
Dongmei Li,
Hao Xin,
Qingbo Meng
Abstract:
Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temper…
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Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temperature region, which effectively reduces collision probability between the CZTS and Se atoms, thus remarkably inhibiting formation of secondary phases on the surface and multiple-step phase evolution processes. This strategy enables the phase evolution to start at relatively higher temperature and thereby leading to high crystalline quality CZTSSe absorber with fewer defects, and corresponding CZTSSe solar cell can present 14.1% efficiency (total area), which is the highest result so far. This work provides important insights into selenization mechanism of CZTSSe absorbers and explores a new way of kinetic regulation strategy to simplify the phase evolution path to efficient CZTSSe solar cells.
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Submitted 24 October, 2022;
originally announced October 2022.
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Cesium-involved electron transfer and electron-electron interaction in high-pressure metallic CsPbI3
Authors:
Feng Ke,
Jiejuan Yan,
Shanyuan Niu,
Jiajia Wen,
Ketao Yin,
Nathan R. Wolf,
Yan-Kai Tzeng,
Hemamala I. Karunadasa,
Young S. Lee,
Wendy L. Mao,
Yu Lin
Abstract:
Electron-phonon coupling was believed to govern the carrier transport in halide perovskites and related phases. Here we demonstrate that electron-electron interaction plays a direct and prominent role in the low-temperature electrical transport of compressed CsPbI3 and renders Fermi liquid (FL)-like behavior. By compressing δ-CsPbI3 to 80 GPa, an insulator-to-metal transition occurs, concomitant w…
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Electron-phonon coupling was believed to govern the carrier transport in halide perovskites and related phases. Here we demonstrate that electron-electron interaction plays a direct and prominent role in the low-temperature electrical transport of compressed CsPbI3 and renders Fermi liquid (FL)-like behavior. By compressing δ-CsPbI3 to 80 GPa, an insulator-to-metal transition occurs, concomitant with the completion of a sluggish structural transition from the one-dimensional (1D) Pnma (δ) phase to a 3D Pmn21 (ε) phase. Deviation from FL behavior is observed in CsPbI3 upon entering the metallic ε phase, which progressively evolves into a FL-like state at 186 GPa. First-principles density functional theory calculations reveal that the enhanced electron-electron coupling is related to the Cs-involved electron transfer and sudden increase of the 5d state occupation of the high-pressure ε phase. Our study presents a promising strategy for tuning the electronic interaction in halide perovskites for realizing intriguing electronic states.
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Submitted 2 March, 2022;
originally announced March 2022.
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A Brewster route to Cherenkov detectors
Authors:
Xiao Lin,
Hao Hu,
Sajan Easo,
Yi Yang,
Yichen Shen,
Kezhen Yin,
Michele Piero Blago,
Ido Kaminer,
Baile Zhang,
Hongsheng Chen,
John Joannopoulos,
Marin Soljačić,
Yu Luo
Abstract:
The Cherenkov effect enables a valuable tool, known as the Cherenkov detector, to identify high-energy particles via the measurement of the Cherenkov cone. However, the sensitivity and momentum coverage of such detectors are intrinsically limited by the refractive index of the host material. Especially, identifying particles with energy above multiple gigaelectronvolts requires host materials with…
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The Cherenkov effect enables a valuable tool, known as the Cherenkov detector, to identify high-energy particles via the measurement of the Cherenkov cone. However, the sensitivity and momentum coverage of such detectors are intrinsically limited by the refractive index of the host material. Especially, identifying particles with energy above multiple gigaelectronvolts requires host materials with a near-unity refractive index, which are often limited to large and bulky gas chambers. Overcoming this fundamental material limit is important for future particle detectors yet remains a long-standing scientific challenge. Here, we propose a different paradigm for Cherenkov detectors that utilizes the broadband angular filter made from stacks of variable one-dimensional photonic crystals. Owing to the Brewster effect, the angular filter is transparent only to Cherenkov photons from a precise incident angle, and particle identification is achieved by mapping each Cherenkov angle to the peak-intensity position of transmitted photons in the detection plane. This unique property of the angular filter is exceptionally beneficial to Cherenkov detection as it enables the realization of a non-dispersive pseudo refractive index over the entire visible spectrum. Moreover, such a pseudo refractive index can be flexibly tuned to arbitrary values, including those close to unity. Our angular-selective Brewster paradigm offers a feasible solution to implement compact and highly sensitive Cherenkov detectors especially in beam lines and it can cover a wide momentum range using readily available dielectric materials.
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Submitted 26 July, 2021;
originally announced July 2021.
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Pressure-induced high-temperature superconductivity retained at ambient
Authors:
Liangzi Deng,
Trevor Bontke,
Rabin Dahal,
Yu Xie,
Bin Gao,
Xue Li,
Ketao Yin,
Melissa Gooch,
Donald Rolston,
Tong Chen,
Zheng Wu,
Yanming Ma,
Pengcheng Dai,
Ching-Wu Chu
Abstract:
To raise the superconducting-transition temperature (Tc) has been the driving force for the long, sustained effort in superconductivity research. Recent progress in hydrides with Tcs up to 287 K under 267 GPa has heralded a new era of room-temperature superconductivity (RTS) with immense technological promise. Indeed, RTS has lifted the temperature barrier for the ubiquitous application of superco…
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To raise the superconducting-transition temperature (Tc) has been the driving force for the long, sustained effort in superconductivity research. Recent progress in hydrides with Tcs up to 287 K under 267 GPa has heralded a new era of room-temperature superconductivity (RTS) with immense technological promise. Indeed, RTS has lifted the temperature barrier for the ubiquitous application of superconductivity. Unfortunately, formidable pressure is required to attain such high Tcs. The most effective relief to this impasse is to remove the pressure needed while retaining the pressure-induced Tc without pressure. Here we show such a possibility in the pure and doped high-temperature superconductor (HTS) FeSe by retaining, at ambient via pressure-quenching (PQ), its Tc up to 37 K (quadrupling that of a pristine FeSe) and other pressure-induced phases. We have also observed that some phases remain stable without pressure at up to 300 K and for at least 7 days. The observations are in qualitative agreement with our ab initio simulations using the solid-state nudged elastic band (SSNEB) method. We strongly believe that the PQ technique developed here can be adapted to the RTS hydrides and other materials of value with minimal effort.
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Submitted 12 April, 2021;
originally announced April 2021.
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Synthesis and electronic structure characterization of diamane
Authors:
Feng Ke,
Lingkong Zhang,
Yabin Chen,
Ketao Yin,
Chenxu Wang,
Wanquan Zhu,
Hailun Wang,
Yu Lin,
Zhenxian Liu,
John S. Tse,
Guilin Wu,
Rodney C. Ewing,
Wendy L. Mao,
Junqiao Wu,
Ho-Kwang Mao,
Bin Chen
Abstract:
Atomically thin graphite, known as graphene, has been a marvel in material science because of its exceptional properties, novel physics and promising applications. Atomically thin diamond, called diamane, has also attracted considerable scientific interest due to its potential physical and mechanical properties. However, until now there has been no reports of successful synthesis of a free-standin…
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Atomically thin graphite, known as graphene, has been a marvel in material science because of its exceptional properties, novel physics and promising applications. Atomically thin diamond, called diamane, has also attracted considerable scientific interest due to its potential physical and mechanical properties. However, until now there has been no reports of successful synthesis of a free-standing pristine diamane film. Here, we report the synthesis and electronic structure characterization of diamane. Electrical measurements, x-ray diffraction and theoretical simulations reveal that trilayer and thicker graphene transform to hexagonal diamane (h-diamane) when compressed to above 20 GPa, which can be preserved down to few GPa. Raman studies indicate that the sample quenched from high pressure and high temperature also has a h-diamane structure, i.e., h-diamane is recovered back to ambient conditions. Optical absorption and band structure calculations reveal an indirect energy gap of 2.8 eV in the diamane film. Compared to gapless graphene, diamane with sizable bandgap may open up new applications of carbon semiconductors.
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Submitted 5 February, 2019;
originally announced February 2019.
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N$_2$H: A Novel Polymeric Hydronitrogen as a High Energy Density Material
Authors:
Ketao Yin,
Yanchao Wang,
Hanyu Liu,
Feng Peng,
Lijun Zhang
Abstract:
The polymeric phase of nitrogen connected by the lower (than three) order N-N bonds has been long sought after for the potential application as high energy density materials. Here we report a hitherto unknown polymeric N$_2$H phase discovered in the high-pressure hydronitrogen system by first-principle structure search method based on particle swarm optimization algorithm. This polymeric hydronitr…
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The polymeric phase of nitrogen connected by the lower (than three) order N-N bonds has been long sought after for the potential application as high energy density materials. Here we report a hitherto unknown polymeric N$_2$H phase discovered in the high-pressure hydronitrogen system by first-principle structure search method based on particle swarm optimization algorithm. This polymeric hydronitrogen consists of quasi-one-dimensional infinite armchair-like polymeric N chains, where H atoms bond with two adjacent N located at one side of armchair edge. It is energetically stable against decomposition above ~33 GPa, and shows novel metallic feature as the result of pressure-enhanced charge transfer and delocalization of π electrons within the infinite nitrogen chains. The high energy density (~4.40 KJ/g), high nitrogen content (96.6%), as well as relatively low stabilization pressure, make it a possible candidate for high energy density applications. It also has lattice dynamical stability down to the ambient pressure, allowing for the possibility of kinetic stability with respect to variations of external conditions. Experimental synthesis of this novel phase is called for.
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Submitted 13 March, 2015;
originally announced March 2015.
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Two-dimensional nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3
Authors:
Xiao Shen,
Kuibo Yin,
Yevgeniy S. Puzyrev,
Yiwei Liu,
Litao Sun,
Run-Wei Li,
Sokrates T. Pantelides
Abstract:
Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistribution. The underlying atomic-scale processes are still unknown, however, which limits device modeling and design. Here we combine experimental data with multi-scale calculations to elucidate the entire atomic-scale cycle in…
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Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistribution. The underlying atomic-scale processes are still unknown, however, which limits device modeling and design. Here we combine experimental data with multi-scale calculations to elucidate the entire atomic-scale cycle in undoped polycrystalline BiFeO3. Conductive atomic force microscopy reveals that the grain boundaries behave like two-dimensional nanovaristors while, on the return part of the cycle, the decreasing current is through the grains. Using density-functional-theory and Monte-Carlo calculations we deduce the atomic-scale mechanism of the observed phenomena. Oxygen vacancies in non-equilibrium concentrations are initially distributed relatively uniformly, but they are swept into the grain boundaries by an increasing voltage. A critical voltage, the SET voltage, then eliminates the barrier for hopping conduction through vacancy energy levels in grain boundaries. On the return part of the cycle, the grain boundaries are again non-conductive, but the grains show nonzero conductivity by virtue of remote doping by oxygen vacancies. The RESET voltage amounts to a heat pulse that redistributes the vacancies. The realization that nanovaristors are at the heart of memristive switching in polycrystalline materials may open possibilities for novel devices and circuits.
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Submitted 12 March, 2015;
originally announced March 2015.
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Compressed Wannier modes found from an $L_1$ regularized energy functional
Authors:
Farzin Barekat,
Ke Yin,
Russel E. Caflisch,
Stanley J. Osher,
Rongjie Lai,
Vidvuds Ozolins
Abstract:
We propose a method for calculating Wannier functions of periodic solids directly from a modified variational principle for the energy, subject to the requirement that the Wannier functions are orthogonal to all their translations ("shift-orthogonality"). Localization is achieved by adding an $L_1$ regularization term to the energy functional. This approach results in "compressed" Wannier modes wi…
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We propose a method for calculating Wannier functions of periodic solids directly from a modified variational principle for the energy, subject to the requirement that the Wannier functions are orthogonal to all their translations ("shift-orthogonality"). Localization is achieved by adding an $L_1$ regularization term to the energy functional. This approach results in "compressed" Wannier modes with compact support, where one parameter $μ$ controls the trade-off between the accuracy of the total energy and the size of the support of the Wannier modes. Efficient algorithms for shift-orthogonalization and solution of the variational minimization problem are demonstrated.
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Submitted 26 March, 2014;
originally announced March 2014.