Showing 1–39 of 39 results for author: Withers, F

Distinctive g-factor of moire-confined excitons in van der Waals heterostructures

Authors: Y. Galvão Gobato, C. Serati de Brito, Andrey Chaves, M. A. Prosnikov, T. Woźniak, Shi Guo, Ingrid D. Barcelos, M. V. Milošević, F. Withers, P. C. M. Christianen

Abstract: We investigated experimentally the valley Zeeman splitting of excitonic peaks in the photoluminescence (PL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures at near-zero twist angles under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the PL spectra: the lower energy one exhibits a reduced g-factor relative to that of the higher energy peak, and much… ▽ More We investigated experimentally the valley Zeeman splitting of excitonic peaks in the photoluminescence (PL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures at near-zero twist angles under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the PL spectra: the lower energy one exhibits a reduced g-factor relative to that of the higher energy peak, and much lower than the recently reported values for interlayer excitons in other van der Waals (vdW) heterostructures. We provide evidence that such a discernible g-factor stems from the spatial confinement of the exciton in the potential landscape created by the moire pattern, due tolattice mismatch and/or inter-layer twist in heterobilayers. This renders magneto-PL an important tool to reach deeper understanding of the effect of moire patterns on excitonic confinement in vdW heterostructures. △ Less

Submitted 4 April, 2022; originally announced April 2022.

Comments: 6 pages, 3 figures. Submitted

Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride using Time-Resolved Optically Detected Magnetic Resonance

Authors: Simon Baber, Ralph N. E. Malein, Prince Khatri, Paul S. Keatley, Shi Guo, Freddie Withers, Andrew J. Ramsay, Isaac J. Luxmoore

Abstract: We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with inter-system crossing rates of $1.02~\mathrm{ns^{-1}}$ and $2.03~\mathrm{ns^{-1}}$ for the $m_s=0$ and $m_s=\pm 1$ states, respectively. Time-gating the photoluminescence enhances the O… ▽ More We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with inter-system crossing rates of $1.02~\mathrm{ns^{-1}}$ and $2.03~\mathrm{ns^{-1}}$ for the $m_s=0$ and $m_s=\pm 1$ states, respectively. Time-gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of $\vert D_{ES}\vert=2.09~\mathrm{GHz}$ is measured. The magnetic field dependence of the time-gated photoluminescence exhibits dips corresponding to the Ground (GSLAC) and excited-state (ESLAC) anti-crossings. Additional dips corresponding to anti-crossings with nearby spin-1/2 parasitic impurities are also observed. The ESLAC dip is sensitive to the angle of the external magnetic field. Comparison to a model suggests that the anti-crossings are mediated by the interaction with nuclear spins, and allow an estimate of the ratio of the spin-dependent relaxation rates from the singlet back into the triplet ground state of $κ_0/κ_1=0.34$. This work provides important spectroscopic signatures of the boron vacancy, and information on the spin pumping and read-out dynamics. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe$_2$ / CrBr$_3$ van der Waals heterostructures

Authors: T. P. Lyons, D. Gillard, A. Molina-Sánchez, A. Misra, F. Withers, P. S. Keatley, A. Kozikov, T. Taniguchi, K. Watanabe, K. S. Novoselov, J. Fernández-Rossier, A. I. Tartakovskii

Abstract: Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr… ▽ More Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr$_3$ in photoluminescence, whereby the valley polarization of the MoSe$_2$ trion state conforms closely to the local CrBr$_3$ magnetization, while the neutral exciton state remains insensitive to the ferromagnet. We attribute this to spin-dependent interlayer charge transfer occurring on timescales between the exciton and trion radiative lifetimes. Going further, we uncover by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of contrasting valley polarization, which we infer to be labyrinthine or otherwise highly intricate, with features smaller than 400 nm corresponding to our optical resolution. Our findings offer a unique insight into the interplay between short-lived valley excitons and spin-dependent interlayer tunnelling, while also highlighting MoSe$_2$ as a promising candidate to optically interface with exotic spin textures in van der Waals structures. △ Less

Submitted 21 October, 2020; v1 submitted 8 April, 2020; originally announced April 2020.

Journal ref: Nature Communications 11, 6021 (2020)

Scalable heterostructures produced through mechanical abrasion of van der Waals powders

Authors: Darren Nutting, Jorlandio F. Felix, Shin Dong-Wook, Adolfo de Sanctis, Monica F Craciun, Saverio Russo, Hong Chang, Nick Cole, Adam Woodgate, Ioannis Leontis, Henry A Fernández, Freddie Withers

Abstract: To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realize a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. Significa… ▽ More To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realize a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. Significant performance improvements are realized in our devices compared to those fabricated through ink-jet printing of nanocrystal dispersions. To highlight the simplicity and scalability of the technology a multitude of different functional heterostructure devices such as resistors, capacitors, photovoltaics as well as energy devices such as large-area catalyst coatings for hydrogen evolution reaction and multilayer heterostructures for triboelectric nanogenerators are shown. The simplicity of the device fabrication, scalability, and compatibility with flexible substrates makes this a promising technological route for up-scalable van der Waals heterostructures. △ Less

Submitted 28 November, 2019; originally announced November 2019.

Highly nonlinear trion-polaritons in a monolayer semiconductor

Authors: R. P. A. Emmanuele, M. Sich, O. Kyriienko, V. Shahnazaryan, F. Withers, A. Catanzaro, P. M. Walker, F. A. Benimetskiy, M. S. Skolnick, A. I. Tartakovskii, I. A. Shelykh, D. N. Krizhanovskii

Abstract: Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting tran… ▽ More Highly nonlinear optical materials with strong effective photon-photon interactions (Kerr-like nonlinearity) are required in the development of novel quantum sources of light as well as for ultrafast and quantum optical signal processing circuitry. Here we report very large Kerr-like nonlinearities by employing strong optical transitions of charged excitons (trions) observed in semiconducting transition metal dichalcogenides (TMDCs). By hybridising trions in monolayer MoSe$_2$ at low electron densities with a microcavity mode, we realise trion-polaritons exhibiting significant energy shifts at very small photon fluxes due to phase space filling. Most notably, the strong trion-polariton nonlinearity is found to be 10 to 1000 larger than in other polariton systems, including neutral exciton-polaritons in TMDCs. Furthermore it exceeds by factors of $\sim 10^3-10^5$ the magnitude of Kerr nonlinearity in bare TMDCs, graphene and other widely used optical materials (e.g. Si, AlGaAs etc) in weak light-matter coupling regimes. The results are in good agreement with a theory which accounts for the composite nature of excitons and trions and deviation of their statistics from that of ideal bosons and fermions. This work opens a new highly nonlinear system for quantum optics applications enabling in principle scalability and control through nano-engineering of van der Waals heterostructures. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Comments: 7 pages of the main text, and 26 pages of supplemental materials (details of the experiment and full theory description). Please also see the quantum theory in arXiv:1910.11294

Journal ref: Nature Communications 11, 3589 (2020)

Electrically tuneable exciton energy exchange between spatially separated 2-dimensional semiconductors in a microcavity

Authors: Henry A. Fernandez, Freddie Withers, Saverio Russo, William L. Barnes

Abstract: Electrical control over the energy exchange between exciton states mediated by cavity-polaritons at room temperature is demonstrated. Spatially separated field effect transistors based on monolayers of WS$_2$ and MoS$_2$ are placed in a tuneable Fabry-Pérot microcavity. This device is specially designed for the formation of exciton-polaritons that combine the two exciton species and a tuneable cav… ▽ More Electrical control over the energy exchange between exciton states mediated by cavity-polaritons at room temperature is demonstrated. Spatially separated field effect transistors based on monolayers of WS$_2$ and MoS$_2$ are placed in a tuneable Fabry-Pérot microcavity. This device is specially designed for the formation of exciton-polaritons that combine the two exciton species and a tuneable cavity mode. It is further shown that the tuning of the free carrier density in the WS$_2$ film leads to a strong modulation of the Rabi splitting that modifies the excitonic and photonic nature of exciton-polaritons. Electrical control of polaritonic devices may lead to technological applications using switchable quantum states. △ Less

Submitted 29 May, 2019; originally announced May 2019.

Comments: Submitted

Electrically tuneable exciton-polaritons through free electron doping in monolayer WS$_2$ microcavities

Authors: Henry A. Fernandez, Freddie Withers, Saverio Russo, William L. Barnes

Abstract: We demonstrate control over light-matter coupling at room temperature combining a field effect transistor (FET) with a tuneable optical microcavity. Our microcavity FET comprises a monolayer tungsten disulfide WS$_2$ semiconductor which was transferred onto a hexagonal boron nitride flake that acts as a dielectric spacer in the microcavity, and as an electric insulator in the FET. In our tuneable… ▽ More We demonstrate control over light-matter coupling at room temperature combining a field effect transistor (FET) with a tuneable optical microcavity. Our microcavity FET comprises a monolayer tungsten disulfide WS$_2$ semiconductor which was transferred onto a hexagonal boron nitride flake that acts as a dielectric spacer in the microcavity, and as an electric insulator in the FET. In our tuneable system, strong coupling between excitons in the monolayer WS$_2$ and cavity photons can be tuned by controlling the cavity length, which we achieved with excellent stability, allowing us to choose from the second to the fifth order of the cavity modes. Once we achieve the strong coupling regime, we then modify the oscillator strength of excitons in the semiconductor material by modifying the free electron carrier density in the conduction band of the WS$_2$. This enables strong Coulomb repulsion between free electrons, which reduces the oscillator strength of excitons until the Rabi splitting completely disappears. We controlled the charge carrier density from 0 up to 3.2 $\times$ 10$^{12}$ cm$^{-2}$, and over this range the Rabi splitting varies from a maximum value that depends on the cavity mode chosen, down to zero, so the system spans the strong to weak coupling regimes. △ Less

Submitted 28 May, 2019; originally announced May 2019.

Comments: Accepted for publication

Journal ref: Advanced Optical Materials (2019)

Upconverted electroluminescence via Auger scattering of interlayer excitons in van der Waals heterostructures

Authors: J. Binder, J. Howarth, F. Withers, M. R. Molas, T. Taniguchi, K. Watanabe, C. Faugeras, A. Wysmolek, M. Danovich, V. I. Fal'ko, A. K. Geim, K. S. Novoselov, M. Potemski, A. Kozikov

Abstract: The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-II heterostructures which are indirect… ▽ More The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe$_2$/MoS$_2$ type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe$_2$ and MoS$_2$, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively. △ Less

Submitted 24 May, 2019; originally announced May 2019.

Comments: accepted for publication in Nature Communications

The valley Zeeman effect in inter- and intra-valley trions in monolayer WSe$_2$

Authors: T. P. Lyons, S. Dufferwiel, M. Brooks, F. Withers, T. Taniguchi, K. Watanabe, K. S. Novoselov, G. Burkard, A. I. Tartakovskii

Abstract: Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information processing applications utilizing a combination of electron spin and valley pseudospin. This unique spin system has led to observation of the valley Zeeman effect in neutral and charged excitonic resonances under applied magnetic fields. However, reported values of the trion valley Zeeman splitting remain h… ▽ More Monolayer transition metal dichalcogenides (TMDs) hold great promise for future information processing applications utilizing a combination of electron spin and valley pseudospin. This unique spin system has led to observation of the valley Zeeman effect in neutral and charged excitonic resonances under applied magnetic fields. However, reported values of the trion valley Zeeman splitting remain highly inconsistent across studies. Here, we utilize high quality hBN encapsulated monolayer WSe$_2$ to enable simultaneous measurement of both intervalley and intravalley trion photoluminescence. We find the valley Zeeman splitting of each trion state to be describable only by a combination of three distinct g-factors, one arising from the exciton-like valley Zeeman effect, the other two, trion specific, g-factors associated with recoil of the excess electron. This complex picture goes significantly beyond the valley Zeeman effect reported for neutral excitons, and eliminates the ambiguity surrounding the magneto-optical response of trions in tungsten based TMD monolayers. △ Less

Submitted 21 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2330 (2019)

Laser writable high-K dielectric for van der Waals nano-electronics

Authors: N. Peimyoo, M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou, A. P. Rooney, S. J. Haigh, S. Russo, M. F. Craciun, F. Withers

Abstract: Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-function… ▽ More Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved performance as well as allowing for added functionalities. Unfortunately, commonly used high-k oxide deposition methods are not directly compatible with 2D materials. Here we demonstrate a method to embed a multi-functional few nm thick high-k oxide within van der Waals devices without degrading the properties of the neighbouring 2D materials. This is achieved by in-situ laser oxidation of embedded few layer HfS2 crystals. The resultant oxide is found to be in the amorphous phase with a dielectric constant of k~15 and break-down electric fields in the range of 0.5-0.6 V/nm. This transformation allows for the creation of a variety of fundamental nano-electronic and opto-electronic devices including, flexible Schottky barrier field effect transistors, dual gated graphene transistors as well as vertical light emitting and detecting tunnelling transistors. Furthermore, upon dielectric break-down, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching between two resistance states. This allows for the creation of resistive switching random access memories (ReRAMs). We believe that this method of embedding a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multi-functional van der Waals devices. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Accepted for publication in Science Advances

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Authors: Adolfo De Sanctis, Jake D. Mehew, Saad Alkhalifa, Freddie Withers, Monica F. Craciun, Saverio Russo

Abstract: The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape wit… ▽ More The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials. △ Less

Submitted 4 December, 2018; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 25 pages, 5 figures

Journal ref: Nano Lett. 2018, 18, 12, 7919-7926

Valley coherent exciton-polaritons in a monolayer semiconductor

Authors: S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, F. Withers, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circ… ▽ More Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant systems. Excitons with a well-defined valley index (or valley pseudospin) as well as superpositions of the exciton valley states can be created with light having circular and linear polarization, respectively. However, the generated excitons have short lifetimes (ps) and are also subject to the electron-hole exchange interaction leading to fast relaxation of the valley pseudospin and coherence. Here we show that control of these processes can be gained by embedding a monolayer of WSe$_2$ in an optical microcavity, where part-light-part-matter exciton-polaritons are formed in the strong light-matter coupling regime. We demonstrate the optical initialization of the valley coherent polariton populations, exhibiting luminescence with a linear polarization degree up to 3 times higher than that of the excitons. We further control the evolution of the polariton valley coherence using a Faraday magnetic field to rotate the valley pseudospin by an angle defined by the exciton-cavity-mode detuning, which exceeds the rotation angle in the bare exciton. This work provides unique insight into the decoherence mechanisms in TMDs and demonstrates the potential for engineering the valley pseudospin dynamics in monolayer semiconductors embedded in photonic structures. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Authors: Davit Ghazaryan, Mark T. Greenaway, Zihao Wang, Victor H. Guarochico-Moreira, Ivan J. Vera-Marun, Jun Yin, Yuanxun Liao, Serge V. Morozov, Oleg Kristanovski, Alexander I. Lichtenstein, Mikhail I. Katsnelson, Fred Withers, Artem Mishchenko, Laurence Eaves, Andre K. Geim, Kostya S. Novoselov, Abhishek Misra

Abstract: The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretica… ▽ More The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode. △ Less

Submitted 12 May, 2018; v1 submitted 6 March, 2018; originally announced March 2018.

Journal ref: Nature Electronics volume 1, pages 344-349 (2018)

Observing imperfection in atomic interfaces for van der Waals heterostructures

Authors: Aidan. P. Rooney, Aleksey Kozikov, Alexander N. Rudenko, Eric Prestat, Matthew J Hamer, Freddie Withers, Yang Cao, Kostya S. Novoselov, Mikhail I. Katsnelson, Roman Gorbachev, Sarah J. Haigh

Abstract: Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron… ▽ More Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS2 or WS2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe2 and WSe2, our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN: interfaces which are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two dimensional (2D) crystal NbSe2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glove-box transfer significantly improves the quality of interfaces for WSe2 compared to processing in air. △ Less

Submitted 25 July, 2017; originally announced July 2017.

Journal ref: Nano Lett 2017, 17 (9), pp 5222

Water-based and Biocompatible 2D Crystal Inks: from Ink Formulation to All- Inkjet Printed Heterostructures

Authors: D. McManus, S. Vranic, F. Withers, V. Sanchez-Romaguera, M. Macucci, H. Yang, R. Sorrentino, K. Parvez, S. Son, G. Iannaccone, K. Kostarelos, G. Fiori, C. Casiraghi

Abstract: Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either bas… ▽ More Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive formulation processing. In addition, none of those formulations are suitable for thin-film heterostructure fabrication due to the re-mixing of different 2D crystals, giving rise to uncontrolled interfaces, which results in poor device performance and lack of reproducibility. In this work we show a general formulation engineering approach to achieve highly concentrated, and inkjet printable water-based 2D crystal formulations, which also provides optimal film formation for multi-stack fabrication. We show examples of all-inkjet printed heterostructures, such as large area arrays of photosensors on plastic and paper and programmable logic memory devices, fully exploiting the design flexibility of inkjet printing. Finally, dose-escalation cytotoxicity assays in vitro also confirm the inks biocompatible character, revealing the possibility of extending use of such 2D crystal formulations to drug delivery and biomedical applications. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Journal ref: Nature Nanotechnology 12, 343 (2017)

Resonantly excited exciton dynamics in two-dimensional MoSe$_2$ monolayers

Authors: L. Scarpelli, F. Masia, E. M. Alexeev, F. Withers, A. I. Tartakovskii, K. S. Novoselov, W. Langbein

Abstract: We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation w… ▽ More We report on the exciton and trion density dynamics in a single layer of MoSe$_2$, resonantly excited and probed using three-pulse four-wave mixing (FWM), at temperatures from 300K to 77K . A multi-exponential third-order response function for amplitude and phase of the heterodyne-detected FWM signal including four decay processes is used to model the data. We provide a consistent interpretation within the intrinsic band structure, not requiring the inclusion of extrinsic effects. We find an exciton radiative lifetime in the sub-picosecond range consistent to what has been recently reported. After the dominating radiative decay, the remaining exciton density, which has been scattered from the initially excited bright radiative state into dark states of different nature by exciton-phonon scattering or disorder scattering, shows a slower dynamics, covering 10ps to 10ns timescales. This includes direct bright transitions with larger in-plane momentum, as well as indirect dark transitions to indirect dark states. We find that exciton-exciton annihilation is not relevant in the observed dynamics, in variance from previous finding under non-resonant excitation. The trion density at 77K reveals a decay of the order of 1ps, similar to what is observed for the exciton. After few tens of picoseconds, the trion dynamics resembles the one of the exciton, indicating that trion ionization occurs on this timescale. △ Less

Submitted 17 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. B 96, 045407 (2017)

Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure

Authors: J. Binder, F. Withers, M. R. Molas, C. Faugeras, K. Nogajewski, K. Watanabe, T. Taniguchi, A. Kozikov, A. K. Geim, K. S. Novoselov, M. Potemski

Abstract: We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the… ▽ More We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of monolayer WSe2. This observation can be interpreted by considering the Coulomb interaction and a tunneling process involving excitons, well beyond the picture of independent charge carriers. An applied magnetic field reveals pronounced magneto-oscillations in the electroluminescence of the free exciton emission intensity with a 1/B-periodicity. This effect is ascribed to a modulation of the tunneling probability resulting from the Landau quantization in the graphene electrodes. A sharp feature in the differential conductance indicates that the Fermi level is pinned and allows for an estimation of the acceptor binding energy. △ Less

Submitted 27 February, 2017; originally announced February 2017.

Comments: Accepted for publication in Nano Letters

Valley addressable exciton-polaritons in atomically thin semiconductors

Authors: S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, F. Withers, S. Schwarz, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported fo… ▽ More While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported for MoS$_2$, WSe$_2$ and WS$_2$ while MoSe$_2$ shows anomalously low valley polarisation retention. In this work, chiral selectivity of MoSe$_2$ cavity polaritons under helical excitation is reported with a polarisation degree that can be controlled by the exciton-cavity detuning. In contrast to the very low circular polarisation degrees seen in MoSe$_2$ exciton and trion resonances, we observe a significant enhancement of up to 7 times when in the polaritonic regime. Here, polaritons introduce a fast decay mechanism which inhibits full valley pseudospin relaxation and thus allows for increased retention of injected polarisation in the emitted light. A dynamical model applicable to cavity-polaritons in any TMD semiconductor, reproduces the detuning dependence through the incorporation of the cavity-modified exciton relaxation, allowing an estimate of the spin relaxation time in MoSe$_2$ which is an order of magnitude faster than those reported in other TMDs. The valley addressable exciton-polaritons reported here offer robust valley polarised states demonstrating the prospect of valleytronic devices based upon TMDs embedded in photonic structures, with significant potential for valley-dependent nonlinear polariton-polariton interactions. △ Less

Submitted 15 December, 2016; originally announced December 2016.

Exciton and trion dynamics in atomically thin MoSe2 and WSe2: effect of localization

Authors: D. Schmidt, T. Godde, J. Schmutzler, M. Aßmann, J. Debus, F. Withers, E. M. Alexeev, O. Del Pozo-Zamudio, O. V. Skrypka, K. S. Novoselov, M. Bayer, A. I. Tartakovskii

Abstract: We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also… ▽ More We present a detailed investigation of the exciton and trion dynamics in naturally doped MoSe2 and WSe2 single atomic layers as a function of temperature in the range 10-300K under above band-gap laser excitation. By combining time-integrated and time-resolved photoluminescence (PL) spectroscopy we show the importance of exciton and trion localization in both materials at low temperatures. We also reveal the transition to delocalized exciton complexes at higher temperatures where the exciton and trion thermal energy exceeds the typical localization energy. This is accompanied with strong changes in PL including suppression of the trion PL and decrease of the trion PL life-time, as well as significant changes for neutral excitons in the temperature dependence of the PL intensity and appearance of a pronounced slow PL decay component. In MoSe2 and WSe2 studied here, the temperatures where such strong changes occur are observed at around 100 and 200 K, respectively, in agreement with their inhomogeneous PL linewidth of 8 and 20 meV at T~10K. The observed behavior is a result of a complex interplay between influences of the specific energy ordering of bright and dark excitons in MoSe2 and WSe2, sample doping, trion and exciton localization and various temperature-dependent non-radiative processes. △ Less

Submitted 13 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. B 94, 165301 (2016)

Electrically pumped single-defect light emitters in WSe$_2$

Authors: S. Schwarz, A. Kozikov, F. Withers, J. K. Maguire, A. P. Foster, S. Dufferwiel, L. Hague, M. N. Makhonin, L. R. Wilson, A . K. Geim, K. S. Novoselov, A. I. Tartakovskii

Abstract: Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects… ▽ More Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics. △ Less

Submitted 6 May, 2016; originally announced May 2016.

Journal ref: 2D Mater. 3 (2016) 025038

Macroscopic self-reorientation of interacting two-dimensional crystals

Authors: C. R. Woods, F. Withers, M. J. Zhu, Y. Cao, G. Yu, A. Kozikov, M. Ben Shalom, S. V. Morozov, M. M. van Wijk, A. Fasolino, M. I. Katsnelson, K. Watanabe, T. Taniguchi, A. K. Geim, A. Mishchenko, K. S. Novoselov

Abstract: Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-… ▽ More Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Comments: 32 pages, 17 figures, includes supplementary information, published in Nature Communications (2016)

Journal ref: Nature Communications 7, Article number:10800, 2016

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Authors: F. Withers, O. Del Pozo-Zamudio, S. Schwarz, S. Dufferwiel, P. M. Walker, T. Godde, A. P. Rooney, A. Gholinia, C. R. Woods, P. Blake, S. J. Haigh, K. Watanabe, T. Taniguchi, I. L. Aleiner, A. K. Geim, V. I. Falko, A. I. Tartakovskii, K. S. Novoselov

Abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext… ▽ More Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities

Authors: S. Dufferwiel, S. Schwarz, F. Withers, A. A. P. Trichet, F. Li, M. Sich, O. Del Pozo-Zamudio, C. Clark, A. Nalitov, D. D. Solnyshkov, G. Malpuech, K. S. Novoselov, J. M. Smith, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microc… ▽ More Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised. △ Less

Submitted 17 May, 2015; originally announced May 2015.

Electron transport of WS$_2$ transistors in a hexagonal boron nitride dielectric environment

Authors: Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson, Monica Felicia Craciun, Saverio Russo

Abstract: We present the first study of the intrinsic electrical properties of WS$_2$ transistors fabricated with two different dielectric environments WS$_2$ on SiO$_2$ and WS$_2$ on h-BN/SiO$_2$, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS$_2$ with various thicknesses from single- up to four-layers and over a wide… ▽ More We present the first study of the intrinsic electrical properties of WS$_2$ transistors fabricated with two different dielectric environments WS$_2$ on SiO$_2$ and WS$_2$ on h-BN/SiO$_2$, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS$_2$ with various thicknesses from single- up to four-layers and over a wide temperature range from 300K down to 4.2 K shows that disorder intrinsic to WS$_2$ is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: Sci Rep, volume 4, DOI:10.1038/srep04967, Supporting information online

Light-emitting diodes by bandstructure engineering in van der Waals heterostructures

Authors: F. Withers, O. Del Pozo-Zamudio, A. Mishchenko, A. P. Rooney, A. Gholinia, K. Watanabe, T. Taniguchi, S. J. Haigh, A. K. Geim, A. I. Tartakovskii, K. S. Novoselov

Abstract: The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waal… ▽ More The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors5, photovoltaic devices, etc. Here we take the complexity and functionality of such van der Waals heterostructures to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light emitting diodes (LEDs) made by stacking up metallic graphene, insulating hexagonal boron nitride (hBN) and various semiconducting monolayers into complex but carefully designed sequences. Our first devices already exhibit extrinsic quantum efficiency of nearly 10% and the emission can be tuned over a wide range of frequencies by appropriately choosing and combining 2D semiconductors (monolayers of transition metal dichalcogenides). By preparing the heterostructures on elastic and transparent substrates, we show that they can also provide the basis for flexible and semi-transparent electronics. The range of functionalities for the demonstrated heterostructures is expected to grow further with increasing the number of available 2D crystals and improving their electronic quality. △ Less

Submitted 24 December, 2014; originally announced December 2014.

Journal ref: Nature Materials, 14, 301-306 (2015)

Graphene-protected copper and silver plasmonics

Authors: V. G. Kravets, R. Jalil, Y. -J. Kim, D. Ansell, D. E. Aznakayeva, B. Thackray, L. Britnell, B. D. Belle, F. Withers, I. P. Radko, Z. Han, S. I. Bozhevolnyi, K. S. Novoselov, A. K. Geim, A. N. Grigorenko

Abstract: Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal comp… ▽ More Plasmonics has established itself as a branch of physics which promises to revolutionize data processing, improve photovoltaics, increase sensitivity of bio-detection. A widespread use of plasmonic devices is notably hindered (in addition to high losses) by the absence of stable and inexpensive metal films suitable for plasmonic applications. This may seem surprising given the number of metal compounds to choose from. Unfortunately, most of them either exhibit a strong damping of surface plasmons or easily oxidize and corrode. To this end, there has been continuous search for alternative plasmonic materials that are, unlike gold, the current metal of choice in plasmonics, compatible with complementary metal oxide semiconductor technology. Here we show that copper and silver protected by graphene are viable candidates. Copper films covered with one to a few graphene layers show excellent plasmonics characteristics surpassing those of gold films. They can be used to fabricate plasmonic devices and survive for at least a year, even in wet and corroding conditions. As a proof of concept, we use the graphene-protected copper to demonstrate dielectric loaded plasmonic waveguides and test sensitivity of surface plasmon resonances. Our results are likely to initiate a wide use of graphene-protected plasmonics. △ Less

Submitted 6 October, 2014; originally announced October 2014.

Comments: 22 pages, 5 figures

Journal ref: Scientific Reports 4, 5517 (2014)

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Authors: A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. -J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Falko, A. K. Geim, L. Eaves, K. S. Novoselov

Abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic… ▽ More Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: For Supplementary Information see http://www.nature.com/nnano/journal/vaop/ncurrent/extref/nnano.2014.187-s1.pdf

Journal ref: Nature Nanotechnology 9, 808-813 (2014)

Heterostructures produced from nanosheet-based inks

Authors: F. Withers, H. Yang, L. Britnell, A. P Rooney, E. Lewis, A. Felten, C. R. Woods, V. Sanchez Romaguera, T. Georgiou, A. Eckmann, Y. J. Kim, S. G. Yeates, S. J. Haigh, A. K. Geim, K. S. Novoselov, C. Casiraghi

Abstract: The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transf… ▽ More The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in the device fabrication. △ Less

Submitted 4 September, 2014; originally announced September 2014.

Journal ref: Nano Letters, 14, 3987 (2014)

Detecting Topological Currents in Graphene Superlattices

Authors: R. V. Gorbachev, J. C. W. Song, G. L. Yu, A. V. Kretinin, F. Withers, Y. Cao, A. Mishchenko, I. V. Grigorieva, K. S. Novoselov, L. S. Levitov, A. K. Geim

Abstract: Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a n… ▽ More Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphene's two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several microns away from the nominal current path. Locally, topological currents are comparable in strength to the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: 19 pgs, 9 fgs

Journal ref: Science 346, 448-451 (2014)

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Authors: S. Schwarz, S. Dufferwiel, P. M. Walker, F. Withers, A. A. P. Trichet, M. Sich, F. Li, E. A. Chekhovich, D. N. Borisenko, N. N. Kolesnikov, K. S. Novoselov, M. S. Skolnick, J. M Smith, D. N. Krizhanovskii, A. I. Tartakovskii

Abstract: Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here… ▽ More Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals. △ Less

Submitted 15 August, 2014; originally announced August 2014.

Journal ref: Nano Lett., 14, 7003, 2014

Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices

Authors: G. L. Yu, R. V. Gorbachev, J. S. Tu, A. V. Kretinin, Y. Cao, R. Jalil, F. Withers, L. A. Ponomarenko, B. A. Piot, M. Potemski, D. C. Elias, X. Chen, K. Watanabe, T. Taniguchi, I. V. Grigorieva, K. S. Novoselov, V. I. Fal'ko, A. K. Geim, A. Mishchenko

Abstract: Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy t… ▽ More Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy to probe directly the density of states (DoS) and energy gaps in this spectrum. Without a magnetic field, replica spectra are seen as pronounced DoS minima surrounded by van Hove singularities. The Hofstadter butterfly shows up as recurring Landau fan diagrams in high fields. Electron-electron interactions add another twist to the self-similar behaviour. We observe suppression of quantum Hall ferromagnetism, a reverse Stoner transition at commensurable fluxes and additional ferromagnetism within replica spectra. The strength and variety of the interaction effects indicate a large playground to study many-body physics in fractal Dirac systems. △ Less

Submitted 2 June, 2014; v1 submitted 15 April, 2014; originally announced April 2014.

Comments: Nature Phys. (2014)

Journal ref: Nature Physics 10, 525 - 529 (2014)

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Authors: A. V. Kretinin, Y. Cao, J. S. Tu, G. L. Yu, R. Jalil, K. S. Novoselov, S. J. Haigh, A. Gholinia, A. Mishchenko, M. Lozada, T. Georgiou, C. R. Woods, F. Withers, P. Blake, G. Eda, A. Wirsig, C. Hucho, K. Watanabe, T. Taniguchi, A. K. Geim, R. V. Gorbachev

Abstract: Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found t… ▽ More Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates. △ Less

Submitted 24 May, 2014; v1 submitted 20 March, 2014; originally announced March 2014.

Comments: 19 pages, 11 figures, 1 table including Supporting Information

Journal ref: Nano Letters 14, 3270 - 3276 (2014)

Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene

Authors: A. Kretinin, G. L. Yu, R. Jalil, Y. Cao, F. Withers, A. Mishchenko, M. I. Katsnelson, K. S. Novoselov, A. K. Geim, F. Guinea

Abstract: The next-nearest neighbor hopping term t' determines a magnitude and, hence, importance of several phenomena in graphene, which include self-doping due to broken bonds and the Klein tunneling that in the presence of t' is no longer perfect. Theoretical estimates for t' vary widely whereas a few existing measurements by using polarization resolved magneto-spectroscopy have found surprisingly large… ▽ More The next-nearest neighbor hopping term t' determines a magnitude and, hence, importance of several phenomena in graphene, which include self-doping due to broken bonds and the Klein tunneling that in the presence of t' is no longer perfect. Theoretical estimates for t' vary widely whereas a few existing measurements by using polarization resolved magneto-spectroscopy have found surprisingly large t', close or even exceeding highest theoretical values. Here we report dedicated measurements of the density of states in graphene by using high-quality capacitance devices. The density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy. This behavior yields t' approx -0.30 eV +-15%, in agreement with the high end of theory estimates. We discuss the role of electron-electron interactions in determining t' and overview phenomena which can be influenced by such a large value of t'. △ Less

Submitted 15 September, 2013; v1 submitted 11 September, 2013; originally announced September 2013.

Journal ref: Phys. Rev. B, vol. 88, 165427 (2013)

Novel highly conductive and transparent graphene based conductors

Authors: Ivan Khrapach, Freddie Withers, Thomas H. Bointon, Dmitry K. Polyushkin, William L. Barnes, Saverio Russo, Monica F. Craciun

Abstract: Future wearable electronics, displays and photovoltaic devices rely on highly conductive, transparent and yet mechanically flexible materials. Nowadays indium tin oxide (ITO) is the most wide spread transparent conductor in optoelectronic applications, however the mechanical rigidity of this material limits its use for future flexible devices. Here we report novel transparent conductors based on f… ▽ More Future wearable electronics, displays and photovoltaic devices rely on highly conductive, transparent and yet mechanically flexible materials. Nowadays indium tin oxide (ITO) is the most wide spread transparent conductor in optoelectronic applications, however the mechanical rigidity of this material limits its use for future flexible devices. Here we report novel transparent conductors based on few layer graphene (FLG) intercalated with ferric chloride (FeCl3) with an outstandingly high electrical conductivity and optical transparency. We show that upon intercalation a record low sheet resistance of 8.8 Ohm/square is attained together with an optical transmittance higher than 84% in the visible range. These parameters outperform the best values of ITO and of other carbon-based materials, making these novel transparent conductors the best candidates for future flexible optoelectronics. △ Less

Submitted 1 June, 2012; originally announced June 2012.

Journal ref: Adv. Mater. 24, 2844-2849 (2012)

Electrical transport in suspended and double gated trilayer graphene

Authors: Thymofiy Khodkov, Freddie Withers, David Christopher Hudson, Monica Felicia Craciun, Saverio Russo

Abstract: We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an averag… ▽ More We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500mT. △ Less

Submitted 14 December, 2011; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: to appear in Applied Physics Letters. Typos corrected and references updated

Tuning the electronic transport properties of graphene through functionalisation with fluorine

Authors: F. Withers, S. Russo, M. Dubois, M. F. Craciun

Abstract: Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed.… ▽ More Engineering the electronic properties of graphene has triggered great interest for potential applications in electronics and opto-electronics. Here we demonstrate the possibility to tune the electronic transport properties of graphene monolayers and multilayers by functionalisation with fluorine. We show that by adjusting the fluorine content different electronic transport regimes can be accessed. For monolayer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping in two dimensions to Efros - Shklovskii variable range hopping. Multilayer fluorinated graphene with high concentration of fluorine show two-dimensional Mott variable range hopping transport, whereas CF0.28 multilayer flakes have a band gap of 0.25eV and exhibit thermally activated transport. Our experimental findings demonstrate that the ability to control the degree of functionalisation of graphene is instrumental to engineer different electronic properties in graphene materials. △ Less

Submitted 9 May, 2011; originally announced May 2011.

Comments: 6 pages, 5 figures

Phonons in potassium doped graphene: the effects of electron-phonon interactions, dimensionality and ad-atom ordering

Authors: C. A. Howard, M. P. M. Dean, F. Withers

Abstract: Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G-peak hardens and narrows with increasing doping, analogous to the trend seen in graphene doped via the field-effect. At high dopings, beyond those accessible by the field-effect, the G-peak strongly softens and broadens. This is interpreted as a dyna… ▽ More Graphene phonons are measured as a function of electron doping via the addition of potassium adatoms. In the low doping regime, the in-plane carbon G-peak hardens and narrows with increasing doping, analogous to the trend seen in graphene doped via the field-effect. At high dopings, beyond those accessible by the field-effect, the G-peak strongly softens and broadens. This is interpreted as a dynamic, non-adiabatic renormalization of the phonon self-energy. At dopings between the light and heavily doped regimes, we find a robust inhomogeneous phase where the potassium coverage is segregated into regions of high and low density. The phonon energies, linewidths and tunability are remarkably similar for 1-4 layer graphene, but significantly different to doped bulk graphite. △ Less

Submitted 12 November, 2011; v1 submitted 6 December, 2010; originally announced December 2010.

Comments: Accepted in Phys. Rev. B as a Rapid Communication. 5 pages, 3 figures, revised text with additional data

Journal ref: Phys. Rev. B 84, 241404(R) (2011)

Electrochemical doping of graphene

Authors: A. A. Kaverzin, S. M. Strawbridge, A. S. Price, F. Withers, A. K. Savchenko, D. W. Horsell

Abstract: The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of… ▽ More The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal. △ Less

Submitted 22 October, 2010; originally announced October 2010.

Comments: 15 pages, 7 figures

Electron properties of fluorinated single-layer graphene transistors

Authors: Freddie Withers, Marc Dubois, Alexander K. Savchenko

Abstract: We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport… ▽ More We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states. △ Less

Submitted 6 September, 2010; v1 submitted 19 May, 2010; originally announced May 2010.

Journal ref: Phys. Rev. B 82, 073403 (2010)