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Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy
Authors:
Nicolas S. Beermann,
Savio Fabretti,
Karsten Rott,
Hassan A. Hafez,
Günter Reiss,
Dmitry Turchinovich
Abstract:
Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant…
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Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers.
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Submitted 23 November, 2022; v1 submitted 3 November, 2022;
originally announced November 2022.
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Grating-graphene metamaterial as a platform for terahertz nonlinear photonics
Authors:
Jan-Christoph Deinert,
David Alcaraz Iranzo,
Raul Perez,
Xiaoyu Jia,
Hassan A. Hafez,
Igor Ilyakov,
Nilesh Awari,
Min Chen,
Mohammed Bawatna,
Alexey N. Ponomaryov,
Semyon Germanskiy,
Mischa Bonn,
Frank H. L. Koppens,
Dmitry Turchinovich,
Michael Gensch,
Sergey Kovalev,
Klaas-Jan Tielrooij
Abstract:
Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature op…
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Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear material systems with efficient conversion and small material footprint. Ideally, the material system should allow for chip-integration and room-temperature operation. Two-dimensional materials are highly interesting in this regard. Particularly promising is graphene, which has demonstrated an exceptionally large nonlinearity in the terahertz regime. Yet, the light-matter interaction length in two-dimensional materials is inherently minimal, thus limiting the overall nonlinear-optical conversion efficiency. Here we overcome this challenge using a metamaterial platform that combines graphene with a photonic grating structure providing field enhancement. We measure terahertz third-harmonic generation in this metamaterial and obtain an effective third-order nonlinear susceptibility with a magnitude as large as 3$\cdot$10$^{-8}$m$^2$/V$^2$, or 21 esu, for a fundamental frequency of 0.7 THz. This nonlinearity is 50 times larger than what we obtain for graphene without grating. Such an enhancement corresponds to third-harmonic signal with an intensity that is three orders of magnitude larger due to the grating. Moreover, we demonstrate a field conversion efficiency for the third harmonic of up to $\sim$1% using a moderate field strength of $\sim$30 kV/cm. Finally we show that harmonics beyond the third are enhanced even more strongly, allowing us to observe signatures of up to the 9$^{\rm th}$ harmonic. Grating-graphene metamaterials thus constitute an outstanding platform for commercially viable, CMOS compatible, room temperature, chip-integrated, THz nonlinear conversion applications.
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Submitted 24 September, 2020;
originally announced September 2020.
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Ultrastrong Magnon-Magnon Coupling Dominated by Antiresonant Interactions
Authors:
Takuma Makihara,
Kenji Hayashida,
G. Timothy Noe II,
Xinwei Li,
Nicolas Marquez Peraca,
Xiaoxuan Ma,
Zuanming Jin,
Wei Ren,
Guohong Ma,
Ikufumi Katayama,
Jun Takeda,
Hiroyuki Nojiri,
Dmitry Turchinovich,
Shixun Cao,
Motoaki Bamba,
Junichiro Kono
Abstract:
Exotic quantum vacuum phenomena are predicted in cavity quantum electrodynamics (QED) systems with ultrastrong light-matter interactions. Their ground states are predicted to be vacuum squeezed states with suppressed quantum fluctuations. The source of such phenomena are antiresonant terms in the Hamiltonian, yet antiresonant interactions are typically negligible compared to resonant interactions…
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Exotic quantum vacuum phenomena are predicted in cavity quantum electrodynamics (QED) systems with ultrastrong light-matter interactions. Their ground states are predicted to be vacuum squeezed states with suppressed quantum fluctuations. The source of such phenomena are antiresonant terms in the Hamiltonian, yet antiresonant interactions are typically negligible compared to resonant interactions in light-matter systems. We report an unusual coupled matter-matter system of magnons that can simulate a unique cavity QED Hamiltonian with coupling strengths that are easily tunable into the ultrastrong coupling regime and with dominant antiresonant terms. We found a novel regime where vacuum Bloch-Siegert shifts, the hallmark of antiresonant interactions, greatly exceed analogous frequency shifts from resonant interactions. Further, we theoretically explored the system's ground state and calculated up to 5.9 dB of quantum fluctuation suppression. These observations demonstrate that magnonic systems provide an ideal platform for simulating exotic quantum vacuum phenomena predicted in ultrastrongly coupled light-matter systems.
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Submitted 7 February, 2021; v1 submitted 24 August, 2020;
originally announced August 2020.
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Thickness-dependent electron momentum relaxation times in iron films
Authors:
K. L. Krewer,
W. Zhang,
J. Arabski,
G. Schmerber,
E. Beaurepaire,
M. Bonn,
D. Turchinovich
Abstract:
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This current response time decreases from 29 fs for thickest films to 7 fs for the thinnest films. The macroscopic response time is not strictly proportional to the conductivity. This excludes the existence of a single relaxation…
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Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This current response time decreases from 29 fs for thickest films to 7 fs for the thinnest films. The macroscopic response time is not strictly proportional to the conductivity. This excludes the existence of a single relaxation time universal for all conduction electrons. We must assume a distribution of microscopic momentum relaxation times. The macroscopic response time depends on average and variation of this distribution; the observed deviation between response time and conductivity scaling corresponds to the scaling of the variation. The variation of microscopic relaxation times depends on film thickness because electrons with different relaxation times are affected differently by the confinement since they have different mean free paths.
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Submitted 18 August, 2020;
originally announced August 2020.
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Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators at room temperature
Authors:
S. Kovalev,
K. -J. Tielrooij,
J. -C. Deinert,
I. Ilyakov,
N. Awari,
M. Chen,
A. Ponomaryov,
M. Bawatna,
T. V. A. G. de Oliveira,
L. M. Eng,
K. A. Kuznetsov,
G. Kh. Kitaeva,
P. I. Kuznetsov,
H. A. Hafez,
D. Turchinovich,
M. Gensch
Abstract:
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of…
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Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
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Submitted 1 March, 2021; v1 submitted 6 June, 2020;
originally announced June 2020.
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Thickness-dependent electron momentum relaxation times in thin iron films
Authors:
Keno L. Krewer,
Wentao Zhang,
Jacek Arabski,
Guy Schmerber,
Eric Beaurepaire,
Mischa Bonn,
Dmitry Turchinovich
Abstract:
Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic response time depends on the mean and the variance of the distribution of microscopic momentum relaxation times of the conducting electrons. Comparing the reco…
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Terahertz time-domain conductivity measurements in 2 to 100 nm thick iron films resolve the femtosecond time delay between applied electric fields and resulting currents. This response time decreases for thinner metal films. The macroscopic response time depends on the mean and the variance of the distribution of microscopic momentum relaxation times of the conducting electrons. Comparing the recorded response times with DC-conductivities demonstrates increasing variance of the microscopic relaxation times with increasing film thickness. At least two electron species contribute to conduction in bulk with substantially differing relaxation times. The different electron species are affected differently by the confinement because they have different mean free paths.
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Submitted 16 May, 2019;
originally announced May 2019.
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The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
Authors:
A. Tomadin,
S. M. Hornett,
H. I. Wang,
E. M. Alexeev,
A. Candini,
C. Coletti,
D. Turchinovich,
M. Klaeui,
M. Bonn,
F. H. L. Koppens,
E. Hendry,
M. Polini,
K. J. Tielrooij
Abstract:
For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have be…
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For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have been put forward concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy. Here, we present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump - terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy ($E_{\rm F} \lesssim$ 0.1 eV for our experiments) broadening of the carrier distribution involves interband transitions - interband heating. At higher Fermi energy ($E_{\rm F} \gtrsim$ 0.15 eV) broadening of the carrier distribution involves intraband transitions - intraband heating. Under certain conditions, additional electron-hole pairs can be created (carrier multiplication) for low $E_{\rm F}$, and hot carriers (hot-carrier multiplication) for higher $E_{\rm F}$. The resultant photoconductivity is positive (negative) for low (high) $E_{\rm F}$, which originates from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.
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Submitted 7 December, 2017;
originally announced December 2017.
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Out-of-plane heat transfer in van der Waals stacks: electron-hyperbolic phonon coupling
Authors:
K. J. Tielrooij,
N. C. H. Hesp,
A. Principi,
M. Lundeberg,
E. A. A. Pogna,
L. Banszerus,
Z. Mics,
M. Massicotte,
P. Schmidt,
D. Davydovskaya,
D. G. Purdie,
I. Goykhman,
G. Soavi,
A. Lombardo,
K. Watanabe,
T. Taniguchi,
M. Bonn,
D. Turchinovich,
C. Stampfer,
A. C. Ferrari,
G. Cerullo,
M. Polini,
F. H. L. Koppens
Abstract:
Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using…
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Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities, and superior electrical and optoelectronic properties. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times, for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism through distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.
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Submitted 4 December, 2017; v1 submitted 13 February, 2017;
originally announced February 2017.
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Efficient metallic spintronic emitters of ultrabroadband terahertz radiation
Authors:
T. Seifert,
S. Jaiswal,
U. Martens,
J. Hannegan,
L. Braun,
P. Maldonado,
F. Freimuth,
A. Kronenberg,
J. Henrizi,
I. Radu,
E. Beaurepaire,
Y. Mokrousov,
P. M. Oppeneer,
M. Jourdan,
G. Jakob,
D. Turchinovich,
L. M. Hayden,
M. Wolf,
M. Münzenberg,
M. Kläui,
T. Kampfrath
Abstract:
Terahertz electromagnetic radiation is extremely useful for numerous applications such as imaging and spectroscopy. Therefore, it is highly desirable to have an efficient table-top emitter covering the 1-to-30-THz window whilst being driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emiss…
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Terahertz electromagnetic radiation is extremely useful for numerous applications such as imaging and spectroscopy. Therefore, it is highly desirable to have an efficient table-top emitter covering the 1-to-30-THz window whilst being driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emission spectra with substantial gaps. Here, we take advantage of the electron spin to realize a conceptually new terahertz source which relies on tailored fundamental spintronic and photonic phenomena in magnetic metal multilayers: ultrafast photo-induced spin currents, the inverse spin-Hall effect and a broadband Fabry-Pérot resonance. Guided by an analytical model, such spintronic route offers unique possibilities for systematic optimization. We find that a 5.8-nm-thick W/CoFeB/Pt trilayer generates ultrashort pulses fully covering the 1-to-30-THz range. Our novel source outperforms laser-oscillator-driven emitters such as ZnTe(110) crystals in terms of bandwidth, terahertz-field amplitude, flexibility, scalability and cost.
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Submitted 25 October, 2016; v1 submitted 13 October, 2015;
originally announced October 2015.
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Competing Ultrafast Energy Relaxation Pathways in Photoexcited Graphene
Authors:
Soeren A. Jensen,
Zoltan Mics,
Ivan Ivanov,
H. Samet Varol,
Dmitry Turchinovich,
Frank. H. L. Koppens,
Mischa Bonn,
Klaas-Jan Tielrooij
Abstract:
For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the domina…
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For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing pathways: carrier-carrier scattering -- creating an elevated carrier temperature -- and optical phonon emission. At present, it is not clear what determines the dominating relaxation pathway. Here we reach a unifying picture of the ultrafast energy relaxation by investigating the terahertz photoconductivity, while varying the Fermi energy, photon energy, and fluence over a wide range. We find that sufficiently low fluence ($\lesssim$ 4 $μ$J/cm$^2$) in conjunction with sufficiently high Fermi energy ($\gtrsim$ 0.1 eV) gives rise to energy relaxation that is dominated by carrier-carrier scattering, which leads to efficient carrier heating. Upon increasing the fluence or decreasing the Fermi energy, the carrier heating efficiency decreases, presumably due to energy relaxation that becomes increasingly dominated by phonon emission. Carrier heating through carrier-carrier scattering accounts for the negative photoconductivity for doped graphene observed at terahertz frequencies. We present a simple model that reproduces the data for a wide range of Fermi levels and excitation energies, and allows us to qualitatively assess how the branching ratio between the two distinct relaxation pathways depends on excitation fluence and Fermi energy.
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Submitted 3 October, 2014;
originally announced October 2014.
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Self-phase modulation of a single-cycle terahertz pulse by nonlinear free-carrier response in a semiconductor
Authors:
Dmitry Turchinovich,
Jørn M. Hvam,
Matthias C. Hoffmann
Abstract:
We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly i…
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We demonstrate the self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse, leading to an ultrafast reduction of the plasma frequency, and hence to a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain. In the frequency domain it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, found to be both positive and negative within the broad THz pulse spectrum, with the zero-crossing point defined by the electron momentum relaxation rate. We also observed the nonlinear spectral broadening and compression of the THz pulse.
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Submitted 23 February, 2012;
originally announced February 2012.
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Semiconductor saturable absorbers for ultrafast THz signals
Authors:
Matthias C. Hoffmann,
Dmitry Turchinovich
Abstract:
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable abso…
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We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.
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Submitted 9 March, 2010;
originally announced March 2010.
