Showing 1–17 of 17 results for author: Trier, F

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

Authors: Fernando Gallego, Felix Trier, Srijani Mallik, Julien Bréhin, Sara Varotto, Luis Moreno Vicente-Arche, Tanay Gosavy, Chia-Ching Lin, Jean-René Coudevylle, Lucía Iglesias, Félix Casanova, Ian Young, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp… ▽ More The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Spin-Hall Current and Nonlocal Transport in Ferromagnet-Free Multi-band models for SrTiO3-Based Nanodevices in the presence of impurities

Authors: Domenico Giuliano, Andrea Nava, Carmine Antonio Perroni, Manuel Bibes, Felix Trier, Marco Salluzzo

Abstract: We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a systematic calculation of the impurity contributions to the self-energy, as well as to the vertex corrections of the relevant diagrams, we recover the full spin-Hall… ▽ More We compute the spin-Hall conductance in a multiband model describing the two-dimensional electron gas formed at a LaAlO3/SrTiO3 interface in the presence of a finite concentration of impurities. Combining linear response theory with a systematic calculation of the impurity contributions to the self-energy, as well as to the vertex corrections of the relevant diagrams, we recover the full spin-Hall vs. sheet conductance dependence of LaAlO3/SrTiO3 as reported in Trier et al. [Nano Lett. 20, 395 (2020)], finding a very good agreement with the experimental data below and above the Lifshitz transition. In particular, we demonstrate that the multiband electronic structure leads to only a partial, instead of a complete, screening of the spin-Hall conductance, which decreases with increasing the carrier density. Our method can be generalized to other two-dimensional systems characterized by a broken inversion symmetry and multiband physics. △ Less

Submitted 17 August, 2023; v1 submitted 29 May, 2023; originally announced May 2023.

Comments: 22 pages, 12 .eps figures

Journal ref: Physical Review B 108, 075418 (2023)

Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Authors: Conor J. McCluskey, Matthew G. Colbear, James P. V. McConville, Shane J. McCartan, Jesi R. Maguire, Michele Conroy, Kalani Moore, Alan Harvey, Felix Trier, Ursel Bangert, Alexei Gruverman, Manuel Bibes, Amit Kumar, Raymond G. P. McQuaid, J. Marty Gregg

Abstract: Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the d… ▽ More Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we herein report magnetoresistance in approximately conical 180o charged domain walls, which occur in partially switched ferroelectric thin film single crystal lithium niobate. This system is ideal for such measurements: firstly, the conductivity difference between domains and domain walls is extremely and unusually large (a factor of at least 1013) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channelled along the walls; secondly, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes (perpendicular to the thin film surface), then the test geometry mirrors that of a Corbino disc, which is a textbook arrangement for geometric magnetoresistance measurement. Our data imply carriers at the domain walls with extremely high room temperature Hall mobilities of up to ~ 3,700cm2V-1s-1. This is an unparalleled value for oxide interfaces (and for bulk oxides too) and is most comparable to mobilities in other systems typically seen at cryogenic, rather than at room, temperature. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 22 pages main text, 24 pages supplementary information. Published in advanced materials, DOI:https://doi.org/10.1002/adma.202204298

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Authors: Jin Hong Lee, Takayuki Harada, Felix Trier, Lourdes Marcano, Florian Godel, Sergio Valencia, Atsushi Tsukazaki, Manuel Bibes

Abstract: Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivitie… ▽ More Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials. △ Less

Submitted 29 September, 2021; originally announced September 2021.

Comments: Accepted in Nano Lett

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

Oxide spin-orbitronics: spin-charge interconversion and topological spin textures

Authors: Felix Trier, Paul Noël, Joo-Von Kim, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and… ▽ More Quantum oxide materials possess a vast range of properties stemming from the interplay between the lattice, charge, spin and orbital degrees of freedom, in which electron correlations often play an important role. Historically, the spin-orbit coupling was rarely a dominant energy scale in oxides. It however recently came to the forefront, unleashing various exotic phenomena connected with real and reciprocal-space topology that may be harnessed in spintronics. In this article, we review the recent advances in the new field of oxide spin-orbitronics with a special focus on spin-charge interconversion from the direct and inverse spin Hall and Edelstein effects, and on the generation and observation of topological spin textures such as skyrmions. We highlight the control of spin-orbit-driven effects by ferroelectricity and give perspectives for the field. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Comments: Submitted to Nature Reviews Materials

Metal/SrTiO$_3$ two-dimensional electron gases for spin-to-charge conversion

Authors: Luis M. Vicente-Arche, Srijani Mallik, Maxen Cosset-Cheneau, Paul Noël, Diogo Vaz, Felix Trier, Tanay A. Gosavi, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Anke Sander, Agnès Barthélémy, Jean-Philippe Attané, Laurent Vila, Manuel Bibes

Abstract: SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties o… ▽ More SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Materials 5, 064005 (2021)

The 2021 Quantum Materials Roadmap

Authors: Feliciano Giustino, Jin Hong Lee, Felix Trier, Manuel Bibes, Stephen M Winter, Roser Valentí, Young-Woo Son, Louis Taillefer, Christoph Heil, Adriana I. Figueroa, Bernard Plaçais, QuanSheng Wu, Oleg V. Yazyev, Erik P. A. M. Bakkers, Jesper Nygård, Pol Forn-Diaz, Silvano De Franceschi, J. W. McIver, L. E. F. Foa Torres, Tony Low, Anshuman Kumar, Regina Galceran, Sergio O. Valenzuela, Marius V. Costache, Aurélien Manchon , et al. (4 additional authors not shown)

Abstract: In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topologi… ▽ More In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Comments: 93 pages, 27 figures

Journal ref: J. Phys. Mater. 3 042006 (2020)

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Authors: D. C. Vaz, F. Trier, A. Dyrdał, A. Johansson, K. Garcia, A. Barthélémy, I. Mertig, J. Barnaś, A. Fert, M. Bibes

Abstract: Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is ex… ▽ More Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on July 2, 2020 as Phys. Rev. Materials 4, 071001(R) (2020)

A switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO$_3$

Authors: Julien Bréhin, Felix Trier, Luis M. Vicente-Arche, Pierre Hemme, Paul Noël, Maxen Cosset-Chéneau, Jean-Philippe Attané, Laurent Vila, Anke Sander, Yann Gallais, Alain Sacuto, Brahim Dkhil, Vincent Garcia, Stéphane Fusil, Agnès Barthélémy, Maximilien Cazayous, Manuel Bibes

Abstract: Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an extern… ▽ More Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a ''ferroelectric'' 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO$_3$ single crystal in which 1 percent of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Published on April 16, 2020 as Phys. Rev. Materials 4, 041002(R) (2020)

Universality of Electron Mobility in LaAlO$_3$/SrTiO$_3$ and bulk SrTiO$_3$

Authors: F. Trier, K. V. Reich, D. V. Christensen, Y. Zhang, H. L. Tuller, Y. Z. Chen, B. I. Shklovskii, N. Pryds

Abstract: Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in… ▽ More Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with $N \simeq 5 \times 10^{18}~\rm{cm^{-3}}$ background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons $n_{3D} < N$ background impurities determine the electron scattering. Thus, when $n_{3D} < N$ it is natural to see in LAO/STO the same mobility as in the bulk. On the other hand, in the bulk samples with $n_{3D} > N$ the mobility collapses because scattering happens on $n_{3D}$ intentionally introduced donors. For LAO/STO the polar catastrophe which provides electrons is not supposed to provide equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO the polar catastrophe model should be revisited. △ Less

Submitted 4 September, 2017; v1 submitted 6 April, 2017; originally announced April 2017.

Comments: 4 pages and 1 figure

Journal ref: Applied Physics Letters 111, 092106 (2017)

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong, Merlin von Soosten, Dennis Valbjørn Christensen, Arghya Bhowmik, Juan Maria García Lastra, Yunzhong Chen, Thomas Sand Jespersen, Nini Pryds

Abstract: The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 h… ▽ More The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices. △ Less

Submitted 29 August, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. Lett. 117, 096804 (2016)

Patterning of high mobility electron gases at complex oxide interfaces

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Merlin von Soosten, Dennis Valbjørn Christensen, Thomas Sand Jespersen, Yunzhong Chen, Nini Pryds

Abstract: Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning… ▽ More Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO$_3$/SrTiO$_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO$_3$/La$_{7/8}$Sr$_{1/8}$MnO$_3$/SrTiO$_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm$^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm$^2$/Vs at 2 K. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Report number: NBI QDEV 2015

Journal ref: Applied Physics Letters 107, 191604 (2015)

Evidence of weak superconductivity at the room-temperature grown LaAlO$_{3}$/SrTiO$_3$ interface

Authors: Guenevere E. D. K. Prawiroatmodjo, Felix Trier, Dennis V. Christensen, Yunzhong Chen, Nini Pryds, Thomas S. Jespersen

Abstract: The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study i… ▽ More The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $460 \, \mathrm{mK}$, higher than any previously reported values for c-LAO/STO. The dependence of the superconducting critical current on temperature, magnetic field and backgate-controlled doping is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains. △ Less

Submitted 26 April, 2016; v1 submitted 5 October, 2015; originally announced October 2015.

Comments: 6 pages, 5 figures

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. B 93, 184504 (2016)

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

Authors: Y. Z. Chen, F. Trier, T. Wijnands, R. J. Green, N. Gauquelin, R. Egoavil, D. V. Christensen, G. Koster, M. Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N. H. Andersen, G. E. D. K. Prawiroatmodjo, T. S. Jespersen, J. A. Sulpizio, M. Honig, S. Linderoth, S. Ilani, J. Verbeeck, G. Van Tendeloo, G. Rijnders, G. A. Sawatzky, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics. △ Less

Submitted 22 April, 2015; originally announced April 2015.

Comments: 29 pages, 5 figures, Accepted for publication in Nature Materials

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Authors: Yunzhong Chen, Felix Trier, Takeshi Kasama, Dennis V. Christensen, Nicolas Bovet, Han Li, Zoltan I. Balogh, Karl T. S. Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth

Abstract: The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,0… ▽ More The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme. △ Less

Submitted 23 February, 2015; originally announced February 2015.

Comments: 19 pages, 4 figs; Nano Letters,2015, published online

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Authors: Y. Z. Chen, N. Bovet, F. Trier, D. V. Christensen, F. M. Qu, N. H. Andersen, T. Kasama, W. Zhang, R. Giraud, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith, J. Nygård, L. Lu, B. Büchner, B. G. Shen, S. Linderoth, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices. △ Less

Submitted 1 April, 2013; originally announced April 2013.

Comments: 25pages, 5 figures

Journal ref: Nature Communications, Nat Commun. 2013;4:1371