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Non-quasiconvex dispersion of composite fermions and the fermionic Haffnian state in the first-excited Landau level
Authors:
Hao Jin,
Junren Shi
Abstract:
It has long been puzzling that fractional quantum Hall states in the first excited Landau level (1LL) often differ significantly from their counterparts in the lowest Landau level. We show that the dispersion of composite fermions (CFs) is a deterministic factor driving the distinction. We find that CFs with two quantized vortices in the 1LL have a non-quasiconvex dispersion. Consequently, in the…
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It has long been puzzling that fractional quantum Hall states in the first excited Landau level (1LL) often differ significantly from their counterparts in the lowest Landau level. We show that the dispersion of composite fermions (CFs) is a deterministic factor driving the distinction. We find that CFs with two quantized vortices in the 1LL have a non-quasiconvex dispersion. Consequently, in the filling fraction $7/3$, CFs occupy the second $Λ$-level instead of the first. The corresponding ground state wave function, based on the CF wave function ansatz, is identified to be the fermionic Haffnian wave function rather than the Laughlin wave function. The conclusion is supported by numerical evidence from exact diagonalizations in both disk and spherical geometries. Furthermore, we show that the dispersion becomes quasiconvex in wide quantum wells or for CFs with four quantized vortices in the filling fraction $11/5$, coinciding with observations that the distinction between the Landau levels disappears under these circumstances.
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Submitted 15 July, 2024;
originally announced July 2024.
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Subharmonic oscillations in the Floquet circuit with the frequency-synthesis dimension
Authors:
Bo Lv,
Shiyun Xia,
Ye Tian,
Ting Liu,
Hongyang Mu,
Zhichao Shen,
Sijie Wang,
Zheng Zhu,
Huibin Tao,
Fanyi Meng,
Jinhui Shi
Abstract:
The period-doubling oscillation emerges with the coexistence between zero and π modes in Floquet topological insulator. Here, utilized the flexibility of the circuit, we construct the Floquet circuit with frequency-synthetic dimension and find the topological-protected deeply-subharmonic oscillations with the period extensively exceeding the doubling-driven period. In the construction framework, t…
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The period-doubling oscillation emerges with the coexistence between zero and π modes in Floquet topological insulator. Here, utilized the flexibility of the circuit, we construct the Floquet circuit with frequency-synthetic dimension and find the topological-protected deeply-subharmonic oscillations with the period extensively exceeding the doubling-driven period. In the construction framework, the periodically-driven mechanism is attained by implementing the circuit-oscillator hierarchy with the stepping-variation resonances in frequency domain. The zero and π modes that arise at the Floquet band in the circuit indicate the anomalous boundary-bulk correspondence. The coexistence of zero and π modes, results in a subharmonic oscillation with the extremely-low frequency on the edge of the Floquet circuit. Furthermore, we explore the Floquet band with the enhanced periodically-driven strength tailored by the component flexibility of the circuit. Our method provides a flexible scheme to study Floquet topological phases, and open a new path for realizing the deeply subwavelength system.
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Submitted 26 June, 2024;
originally announced June 2024.
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Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides
Authors:
Ziqiang Xu,
Yan Shao,
Chun Huang,
Genyu Hu,
Shihao Hu,
Zhi-Lin Li,
Xiaoyu Hao,
Yanhui Hou,
Teng Zhang,
Jin-An Shi,
Chen Liu,
Jia-Ou Wang,
Wu Zhou,
Jiadong Zhou,
Wei Ji,
Jingsi Qiao,
Xu Wu,
Hong-Jun Gao,
Yeliang Wang
Abstract:
As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fa…
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As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.
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Submitted 17 June, 2024;
originally announced June 2024.
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Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
Authors:
Haiyang Pan,
Anil Kumar Singh,
Chusheng Zhang,
Xueqi Hu,
Jiayu Shi,
Liheng An,
Naizhou Wang,
Ruihuan Duan,
Zheng Liu,
S tuart S. P. Parkin,
Pritam Deb,
Weibo Gao
Abstract:
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application o…
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The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe3GaTe2/WSe2/Fe3GaTe2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy-dependent localized spin states in the metallic ferromagnet Fe3GaTe2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room-temperature tunable spintronic devices based on vdW magnet heterostructures.
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Submitted 5 June, 2024;
originally announced June 2024.
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Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems
Authors:
Denis Aglagul,
Jian Shi
Abstract:
We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $Γ$ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realizatio…
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We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $Γ$ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.
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Submitted 16 May, 2024; v1 submitted 6 May, 2024;
originally announced May 2024.
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High efficient sunlight-driven CO2 hydrogenation to methanol over NiZn intermetallic catalysts under atmospheric pressure
Authors:
Linjia Han,
Fanqi Meng,
Xianhua Bai,
Qixuan Wu,
Yanhong Luo,
Jiangjian Shi,
Yaguang Li,
Dongmei Li,
Qingbo Meng
Abstract:
The synthesis of solar methanol through direct CO2 hydrogenation using solar energy is of great importance in advancing a sustainable energy economy. In this study, non-precious NiZn intermetallic/ZnO catalyst is reported to catalyze the hydrogenation of CO2 to methanol using sunlight irradiation (1sun). The NiZn-ZnO interface is identified as the active site to stabilize the key intermediates of…
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The synthesis of solar methanol through direct CO2 hydrogenation using solar energy is of great importance in advancing a sustainable energy economy. In this study, non-precious NiZn intermetallic/ZnO catalyst is reported to catalyze the hydrogenation of CO2 to methanol using sunlight irradiation (1sun). The NiZn-ZnO interface is identified as the active site to stabilize the key intermediates of HxCO*. At ambient pressure, the NiZn-ZnO catalyst demonstrates a methanol production rate of 127.5 umol g-1h-1 from solar driven CO2 hydrogenation, with a remarkable 100% selectivity towards methanol in the total organic products. Notably, this production rate stands as the highest record for photothermic CO2 hydrogenation to methanol in continuous-flow reactors with sunlight as the only requisite energy input. This discovery not only paves the way for the development of novel catalysts for CO2 hydrogenation to methanol but also marks a significant stride towards a full solar-driven chemical energy storage.
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Submitted 22 April, 2024;
originally announced April 2024.
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Adiabatic Approximation and Aharonov-Casher Bands in Twisted Homobilayer TMDs
Authors:
Jingtian Shi,
Nicolás Morales-Durán,
Eslam Khalaf,
Allan H. MacDonald
Abstract:
Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous work proposed viewing the system using an adiabatic approximation that replaces the position-dependence of the layer spinor…
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Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous work proposed viewing the system using an adiabatic approximation that replaces the position-dependence of the layer spinor with a nonuniform periodic effective magnetic field. When the local zero-point kinetic energy of this magnetic field cancels identically against that of an effective Zeeman energy, a Bloch-band version of Aharonov-Casher zero-energy modes, which we refer to as Aharonov-Casher band, emerges leading to ideal quantum geometry. Here, we critically examine the validity of the adiabatic approximation and identify the parameter regimes under which Aharonov-Casher bands emerge. We show that the adiabatic approximation is accurate for a wide range of parameters including those realized in experiments. Furthermore, we show that while the cancellation leading to the emergence of Aharonov-Casher bands is generally not possible beyond the leading Fourier harmonic, the leading harmonic is the dominant term in the Fourier expansions of the zero-point kinetic energy and Zeeman energy. As a result, the leading harmonic expansion accurately captures the trend of the bandwidth and quantum geometry, though it may fail to quantitatively reproduce more detailed information about the bands such as the Berry curvature distribution.
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Submitted 29 June, 2024; v1 submitted 20 April, 2024;
originally announced April 2024.
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Bis(stearoyl) Sulfide: A Stable, Odor-free Sulfur Precursor for High-Efficiency Metal Sulfide Quantum Dot Photovoltaics
Authors:
Miguel Albaladejo-Siguan,
Anatol Prudnikau,
Alina Senina,
Elizabeth C. Baird,
Yvonne J. Hofstetter,
Julius Brunner,
Juanzi Shi,
Yana Vaynzof,
Fabian Paulus
Abstract:
The synthesis of metal sulfide nanocrystals is a crucial step in the fabrication of quantum dot (QD) photovoltaics. Control over the quantum dot size during synthesis allows for precise tuning of their optical and electronic properties, making them an appealing choice for electronic applications. This flexibility has led to the implementation of quantum dots in both highly-efficient single junctio…
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The synthesis of metal sulfide nanocrystals is a crucial step in the fabrication of quantum dot (QD) photovoltaics. Control over the quantum dot size during synthesis allows for precise tuning of their optical and electronic properties, making them an appealing choice for electronic applications. This flexibility has led to the implementation of quantum dots in both highly-efficient single junction solar cells and other optoelectronic devices including photodetectors and transistors. Most commonly, metal sulfide quantum dots are synthesized using the hot-injection method utilizing toxic, and air- and moisture sensitive sulfur source: bis(trimethylsilyl) sulfide (TMS)2S. Here, we present bis(stearoyl) sulfide (St2S) as a new type of air-stable sulfur precursor for the synthesis of sulfide-based QDs, which yields uniform, pure, and stable nanocrystals. Photovoltaic devices based on these QDs are equally efficient as those fabricated by (TMS)2S but exhibit an enhanced operational stability. These results highlight that St2S can be widely adopted for the synthesis of metal sulfide quantum dots for a range of optoelectronic applications.
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Submitted 17 April, 2024;
originally announced April 2024.
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Multi-interface engineering to realize all-solution processed highly efficient Kesterite solar cells
Authors:
Licheng Lou,
Kang Yin,
Jinlin Wang,
Yuan Li,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Shudan Chen,
Tan Guo,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/A…
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With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/Ag nanowires. A multi-interface engineering strategy assisted by organic polymers and molecules is explored to synergistically improve the film deposition, passivate the surface defects and facilitate the charge transfer. These efforts help us achieve high-performance and robust Kesterite solar cells at extremely low time and energy costs, with efficiency records of 14.37% and 13.12% being realized in rigid and flexible Kesterite solar cells, respectively. Our strategy here is also promising to be transplanted into other solar cells with similar geometric and energy band structures, helping reduce production costs and shorten the production cycle (i.e. increasing production capacity) of these photovoltaic industries.
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Submitted 10 April, 2024;
originally announced April 2024.
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Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells
Authors:
Jinlin Wang,
Licheng Lou,
Kang Yin,
Fanqi Meng,
Xiao Xu,
Menghan Jiao,
Bowen Zhang,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and sev…
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Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and severe charge loss, while its regulation remains challenging due to the contradiction between disorder-order phase transition thermodynamics and atom-interchange kinetics. Herein, through introducing more vacancies in the CZTSSe surface, we explored a vacancy-assisted strategy to reduce the atom-interchange barrier limit to facilitate the Cu-Zn ordering kinetic process. The improvement in the Cu-Zn order degree has significantly reduced the charge loss in the device and helped us realize 15.4% (certified at 14.9%) and 13.5% efficiency (certified at 13.3%) in 0.27 cm2 and 1.1 cm2-area CZTSSe solar cells, respectively, thus bringing substantial advancement for emerging inorganic thin-film photovoltaics.
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Submitted 8 April, 2024;
originally announced April 2024.
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Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV
Authors:
Kang Yin,
Jinlin Wang,
Licheng Lou,
Xiao Xu,
Bowen Zhang,
Menghan Jiao,
Jiangjian Shi,
Dongmei Li,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in contr…
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Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell.
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Submitted 30 March, 2024;
originally announced April 2024.
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Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
Authors:
Jiaqi Feng,
Xiaodong Zhou,
Meiling Xu,
Jingming Shi,
Yinwei Li
Abstract:
Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character…
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Magneto-optical effects (MOE), interfacing the fundamental interplay between magnetism and light, have served as a powerful probe for magnetic order, band topology, and valley index. Here, based on multiferroic and topological bilayer antiferromagnets (AFMs), we propose a layer control of MOE (L-MOE), which is created and annihilated by layer-stacking or an electric field effect. The key character of L-MOE is the sign-reversible response controlled by ferroelectric polarization, the Neel vector, or the electric field direction. Moreover, the sign-reversible L-MOE can be quantized in topologically insulating AFMs. We reveal that the switchable L-MOE originates from the combined contributions of spin-conserving and spin-flip interband transitions in spin-valley splitting AFMs, a phenomenon not observed in conventional AFMs. Our findings bridge the ancient MOE to the emergent realms of layertronics, valleytronics, and multiferroics and may hold immense potential in these fields.
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Submitted 25 March, 2024;
originally announced March 2024.
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Anomalous Raman Response in 2D Magnetic FeTe under Uniaxial Strain: Tetragonal and Hexagonal Polymorphs
Authors:
Wuxiao Han,
Tiansong Zhang,
Pengcheng Zhao,
Longfei Yang,
Mo Cheng,
Jianping Shi,
Yabin Chen
Abstract:
Two-dimensional (2D) Fe-chalcogenides have emerged with rich structures, magnetisms and superconductivities, which sparked the growing research interests in the torturous transition mechanism and tunable properties for their potential applications in nanoelectronics. Uniaxial strain can produce a lattice distortion to study symmetry breaking induced exotic properties in 2D magnets. Herein, the ano…
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Two-dimensional (2D) Fe-chalcogenides have emerged with rich structures, magnetisms and superconductivities, which sparked the growing research interests in the torturous transition mechanism and tunable properties for their potential applications in nanoelectronics. Uniaxial strain can produce a lattice distortion to study symmetry breaking induced exotic properties in 2D magnets. Herein, the anomalous Raman spectrum of 2D tetragonal (t-) and hexagonal (h-) FeTe were systematically investigated via uniaxial strain engineering strategy. We found that both t- and h-FeTe keep the structural stability under different uniaxial tensile or compressive strain up to +/- 0.4%. Intriguingly, the lattice vibrations along both in-plane and out-of-plane directions exceptionally hardened (softened) under tensile (compressive) strain, distinguished from the behaviors of many conventional 2D systems. Furthermore, the difference in thickness-dependent strain effect can be well explained by their structural discrepancy between two polymorphs of FeTe. Our results could provide a unique platform to elaborate the vibrational properties of many novel 2D materials.
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Submitted 14 March, 2024;
originally announced March 2024.
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E(n)-Equivariant Cartesian Tensor Passing Potential
Authors:
Junjie Wang,
Yong Wang,
Haoting Zhang,
Ziyang Yang,
Zhixin Liang,
Jiuyang Shi,
Hui-Tian Wang,
Dingyu Xing,
Jian Sun
Abstract:
Machine learning potential (MLP) has been a popular topic in recent years for its potential to replace expensive first-principles calculations in some large systems. Meanwhile, message passing networks have gained significant attention due to their remarkable accuracy, and a wave of message passing networks based on Cartesian coordinates has emerged. However, the information of the node in these m…
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Machine learning potential (MLP) has been a popular topic in recent years for its potential to replace expensive first-principles calculations in some large systems. Meanwhile, message passing networks have gained significant attention due to their remarkable accuracy, and a wave of message passing networks based on Cartesian coordinates has emerged. However, the information of the node in these models is limited to scalars, vectors, and tensors. In this work, we proposed High-order Tensor Passing Potential (HotPP), an E(n) equivariant message passing neural network that extends the node embedding and message to an arbitrary order tensor. By performing some basic equivariant operations, high order tensors can be coupled very simply and thus the model can make direct predictions of high-order tensors such as dipole moments and polarizabilities without any modifications. Compared to high order tensor models based on spherical vectors, this network is simpler and can achieve comparable accuracy with much fewer parameters. The tests in several datasets demonstrate HotPP is a promising new approach that warrants further investigation.
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Submitted 23 February, 2024;
originally announced February 2024.
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Interlayer ferroelectric polarization modulated anomalous Hall effects in four-layer MnBi2Te4 antiferromagnets
Authors:
Ziyu Niu,
Xiang-Long Yu,
Dingfu Shao,
Xixiang Jing,
Defeng Hou,
Xuhong Li,
Jing Sun,
Junqin Shi,
Xiaoli Fan,
Tengfei Cao
Abstract:
Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic and transport properties of 2D materials. Four-layer antiferromagnetic MnBi2Te4 (F-MBT) of…
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Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper vdW assembly that enables the realization of novel electronic, magnetic and transport properties of 2D materials. Four-layer antiferromagnetic MnBi2Te4 (F-MBT) offers an excellent platform to explore ferroelectric polarization effects on magnetic order and topological transport properties of nanomaterials. Here, by applying symmetry analyses and density-functional-theory calculations, the ferroelectric interface effects on magnetic order, anomalous Hall effect (AHE) or even quantum AHE (QAHE) on the F-MBT are analyzed. Interlayer ferroelectric polarization in F-MBT efficiently violates the PT symmetry (the combination symmetry of central inversion (P) and time reverse (T) of the F-MBT by conferring magnetoelectric couplings, and stabilizes a specific antiferromagnetic order encompassing a ferromagnetic interface in the F-MBT. We predict that engineering an interlayer polarization in the top or bottom interface of F-MBT allows converting F-MBT from a trivial insulator to a Chern insulator. The switching of ferroelectric polarization at the middle interfaces results in a direction reversal of the quantum anomalous Hall current. Additionally, the interlayer polarization of the top and bottom interfaces can be aligned in the same direction, and the switching of polarization direction also reverses the direction of anomalous Hall currents. Overall, our work highlights the occurrence of quantum-transport phenomena in 2D vdW four-layer antiferromagnets through vdW assembly. These phenomena are absent in the bulk or thin-film in bulk-like stacking forms of MnBi2Te4.
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Submitted 19 February, 2024;
originally announced February 2024.
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Challenges and Opportunities in Searching for Rashba-Dresselhaus Materials for Efficient Spin-Charge Interconversion at Room Temperature
Authors:
Zixu Wang,
Zhizhong Chen,
Rui Xu,
Hanyu Zhu,
Ravishankar Sundararaman,
Jian Shi
Abstract:
Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in mat…
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Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in materials with Rashba-type spin-orbit coupling. Over last decade, there has been rapid progresses for increasing interconversion efficiencies due to the Edelstein effect in a few Rashba-Dresselhaus materials and topological insulators, making Rashba spin-momentum locking a promising technological solution for spin-orbit logic devices. However, despite the rapid progress that leads to high spin-charge interconversion efficiency at cryogenic temperatures, the room-temperature efficiency needed for technological applications is still low. This paper presents our understanding on the challenges and opportunities in searching for Rashba-Dresselhaus materials for efficient spin-charge interconversion at room temperature by focusing on materials properties such as Rashba coefficients, momentum relaxation times, spin-momentum locking relations and electrical conductivities.
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Submitted 27 January, 2024;
originally announced January 2024.
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Pressure-Modulated Structural and Magnetic Phase Transitions in Two-Dimensional FeTe: Tetragonal and Hexagonal Polymorphs
Authors:
Wuxiao Han,
Jiajia Feng,
Hongliang Dong,
Mo Cheng,
Liu Yang,
Yunfei Yu,
Guoshuai Du,
Jiayin Li,
Yubing Du,
Tiansong Zhang,
Zhiwei Wang,
Bin Chen,
Jianping Shi,
Yabin Chen
Abstract:
Two-dimensional (2D) Fe-chalcogenides with rich structures, magnetisms and superconductivities are highly desirable to reveal the torturous transition mechanism and explore their potential applications in spintronics and nanoelectronics. Hydrostatic pressure can effectively stimulate novel phase transitions between various ordered states and to plot the seductive phase diagram. Herein, the structu…
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Two-dimensional (2D) Fe-chalcogenides with rich structures, magnetisms and superconductivities are highly desirable to reveal the torturous transition mechanism and explore their potential applications in spintronics and nanoelectronics. Hydrostatic pressure can effectively stimulate novel phase transitions between various ordered states and to plot the seductive phase diagram. Herein, the structural evolution and transport characteristics of 2D FeTe were systematically investigated under extreme conditions through comparing two distinct symmetries, i.e., tetragonal (t-) and hexagonal (h-) FeTe. We found that 2D t-FeTe presented the pressure-induced transition from antiferromagnetic to ferromagnetic states at ~ 3 GPa, corresponding to the tetragonal collapse of layered structure. Contrarily, ferromagnetic order of 2D h-FeTe was retained up to 15 GPa, evidently confirmed by electrical transport and Raman measurements. Furthermore, the detailed P-T phase diagrams of both 2D t-FeTe and h-FeTe were mapped out with the delicate critical conditions. We believe our results can provide a unique platform to elaborate the extraordinary physical properties of Fe-chalcogenides and further to develop their practical applications.
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Submitted 30 November, 2023;
originally announced November 2023.
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General-purpose machine-learned potential for 16 elemental metals and their alloys
Authors:
Keke Song,
Rui Zhao,
Jiahui Liu,
Yanzhou Wang,
Eric Lindgren,
Yong Wang,
Shunda Chen,
Ke Xu,
Ting Liang,
Penghua Ying,
Nan Xu,
Zhiqiang Zhao,
Jiuyang Shi,
Junjie Wang,
Shuang Lyu,
Zezhu Zeng,
Shirong Liang,
Haikuan Dong,
Ligang Sun,
Yue Chen,
Zhuhua Zhang,
Wanlin Guo,
Ping Qian,
Jian Sun,
Paul Erhart
, et al. (3 additional authors not shown)
Abstract:
Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete repre…
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Machine-learned potentials (MLPs) have exhibited remarkable accuracy, yet the lack of general-purpose MLPs for a broad spectrum of elements and their alloys limits their applicability. Here, we present a feasible approach for constructing a unified general-purpose MLP for numerous elements, demonstrated through a model (UNEP-v1) for 16 elemental metals and their alloys. To achieve a complete representation of the chemical space, we show, via principal component analysis and diverse test datasets, that employing one-component and two-component systems suffices. Our unified UNEP-v1 model exhibits superior performance across various physical properties compared to a widely used embedded-atom method potential, while maintaining remarkable efficiency. We demonstrate our approach's effectiveness through reproducing experimentally observed chemical order and stable phases, and large-scale simulations of plasticity and primary radiation damage in MoTaVW alloys. This work represents a significant leap towards a unified general-purpose MLP encompassing the periodic table, with profound implications for materials science.
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Submitted 12 June, 2024; v1 submitted 8 November, 2023;
originally announced November 2023.
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Defect Regulation by Palladium Incorporation towards Grain Boundaries of Kesterite solar cells
Authors:
Jinlin Wang,
Jiangjian Shi,
Kang Yin,
Fanqi Meng,
Shanshan Wang,
Licheng Lou,
Jiazheng Zhou,
Xiao Xu,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Shiyou Chen,
Qingbo Meng
Abstract:
Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as V…
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Kesterite Cu2ZnSn(S, Se)4 (CZTSSe) solar cell has emerged as one of the most promising candidates for thin-film photovoltaics. However, severe charge losses occurring at the grain boundaries (GBs) of Kesterite polycrystalline absorbers has hindered the improvement of cell performance. Herein, we report a redox reaction strategy involving palladium (Pd) to eliminate atomic vacancy defects such as VSn and VSe in GBs of the Kesterite absorbers. We demonstrate that PdSex compounds could form during the selenization process and distribute at the GBs and the absorber surfaces; thereby aid in the suppression of Sn and Se volatilization loss and inhibiting the formation of VSn and VSe defects. Furthermore, Pd(II)/Pd(IV) serves as a redox shuttle, i.e., on one hand, Pd(II) captures Se vapor from the reaction environment to produce PdSe2, on the other hand, PdSe2 provides Se atoms to the Kesterite absorber by being reduced to PdSe, thus contributing to the elimination of pre-existing VSe defects within GBs. These effects collectively reduce defects and enhance the p-type characteristics of the Kesterite absorber, leading to a significant reduction in charge recombination loss within the cell. As a result, high-performance Kesterite solar cells with a total-area efficiency of 14.5% have been achieved. This remarkable efficiency increase benefited from the redox reaction strategy offers a promising avenue for the precise regulation of defects in Kesterite solar cells and holds generally significant implications for the exploration of various other photovoltaic devices.
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Submitted 7 November, 2023;
originally announced November 2023.
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Millimeter-scale exfoliation of hBN with tunable flake thickness
Authors:
Amy S. McKeown-Green,
Helen J. Zeng,
Ashley P. Saunders,
Jiayi Li,
Jenny Hu,
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Jennifer A. Dionne,
Tony F. Heinz,
Stephen Wu,
Fan Zheng,
Fang Liu
Abstract:
As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-fi…
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As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Phase-Modulated Elastic Properties of Two-Dimensional Magnetic FeTe: Hexagonal and Tetragonal Polymorphs
Authors:
Yunfei Yu,
Mo Cheng,
Zicheng Tao,
Wuxiao Han,
Guoshuai Du,
Yanfeng Guo,
Jianping Shi,
Yabin Chen
Abstract:
Two-dimensional (2D) layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductor and provided the key insights to understand the phonon-electron interaction and pairing mechanism. Their mechanical properties are of strategic importance for the potential applications in spintronics and optoelectronics. However, there is still lack of effici…
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Two-dimensional (2D) layered magnets, such as iron chalcogenides, have emerged these years as a new family of unconventional superconductor and provided the key insights to understand the phonon-electron interaction and pairing mechanism. Their mechanical properties are of strategic importance for the potential applications in spintronics and optoelectronics. However, there is still lack of efficient approach to tune the elastic modulus despite the extensive studies. Herein, we report the modulated elastic modulus of 2D magnetic FeTe and its thickness-dependence via phase engineering. The grown 2D FeTe by chemical vapor deposition can present various polymorphs, i.e. tetragonal FeTe (t-FeTe, antiferromagnetic) and hexagonal FeTe (h-FeTe, ferromagnetic). The measured Young's modulus of t-FeTe by nanoindentation method showed an obvious thickness-dependence, from 290.9+-9.2 to 113.0+-8.7 GPa when the thicknesses increased from 13.2 to 42.5 nm, respectively. In comparison, the elastic modulus of h-FeTe remains unchanged. Our results could shed light on the efficient modulation of mechanical properties of 2D magnetic materials and pave the avenues for their practical applications in nanodevices.
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Submitted 31 October, 2023;
originally announced October 2023.
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Quantum mechanics of composite fermions
Authors:
Junren Shi
Abstract:
We establish the quantum mechanics of composite fermions based on the dipole picture initially proposed by Read. It comprises three complimentary components: a wave equation for determining the wave functions of a composite fermion in ideal fractional quantum Hall states and when subjected to external perturbations, a wave function ansatz for mapping a many-body wave function of composite fermions…
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We establish the quantum mechanics of composite fermions based on the dipole picture initially proposed by Read. It comprises three complimentary components: a wave equation for determining the wave functions of a composite fermion in ideal fractional quantum Hall states and when subjected to external perturbations, a wave function ansatz for mapping a many-body wave function of composite fermions to a physical wave function of electrons, and a microscopic approach for determining the effective Hamiltonian of the composite fermion. The wave equation resembles the ordinary Schrödinger equation but has drift velocity corrections which are not present in the Halperin-Lee-Read theory. The wave-function ansatz constructs a physical wave function of electrons by projecting a state of composite fermions onto a half-filled bosonic Laughlin state of vortices. Remarkably, Jain's wave function ansatz can be reinterpreted as the new ansatz in an alternative wave-function representation of composite fermions. The dipole model and the effective Hamiltonian can be derived from the microscopic model of interacting electrons confined in a Landau level, with parameters fully determined. In this framework, we can construct the physical wave function of a fractional quantum Hall state deductively by solving the wave equation and applying the wave function ansatz, based on the effective Hamiltonian derived from first principles, rather than relying on intuitions or educated guesses. For ideal fractional quantum Hall states in the lowest Landau level, the approach yields physical wave functions identical to those prescribed by the standard theory of composite fermions. We further demonstrate that the reformulated theory of composite fermions can be easily generalized for flat Chern bands.
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Submitted 27 April, 2024; v1 submitted 1 September, 2023;
originally announced September 2023.
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Magic Angles and Fractional Chern Insulators in Twisted Homobilayer TMDs
Authors:
Nicolás Morales-Durán,
Nemin Wei,
Jingtian Shi,
Allan H. MacDonald
Abstract:
We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by mapping their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau le…
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We explain the appearance of magic angles and fractional Chern insulators in twisted K-valley homobilayer transition metal dichalcogenides by mapping their continuum model to a Landau level problem. Our approach relies on an adiabatic approximation for the quantum mechanics of valence band holes in a layer-pseudospin field that is valid for sufficiently small twist angles and on a lowest Landau level approximation that is valid for sufficiently large twist angles. It simply explains why the quantum geometry of the lowest moiré miniband is nearly ideal at particular flat-band twist angles, predicts that topological flat bands occur only when the valley-dependent moiré potential is sufficiently strong compared to the interlayer tunneling amplitude, and provides a powerful starting point for the study of interactions
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Submitted 12 December, 2023; v1 submitted 6 August, 2023;
originally announced August 2023.
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Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices
Authors:
Guoan Li,
Xiaofan Shi,
Ting Lin,
Guang Yang,
Marco Rossi,
Ghada Badawy,
Zhiyuan Zhang,
Jiayu Shi,
Degui Qian,
Fang Lu,
Lin Gu,
An-Qi Wang,
Bingbing Tong,
Peiling Li,
Zhaozheng Lyu,
Guangtong Liu,
Fanming Qu,
Ziwei Dou,
Dong Pan,
Jianhua Zhao,
Qinghua Zhang,
Erik P. A. M. Bakkers,
Michał P. Nowak,
Paweł Wójcik,
Li Lu
, et al. (1 additional authors not shown)
Abstract:
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren…
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With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.
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Submitted 24 July, 2024; v1 submitted 13 July, 2023;
originally announced July 2023.
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Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells
Authors:
Jiangjian Shi,
Jinlin Wang,
Fanqi Meng,
Jiazheng Zhou,
Xiao Xu,
Kang Yin,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Huijue Wu,
Yanhong Luo,
Dongmei Li,
Qingbo Meng
Abstract:
The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex…
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The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex defects and charge losses. To overcome these limitations and improve the efficiency of CZTSSe solar cells, it is crucial to experimentally identify and mitigate deep defects. In this study, we reveal that the dominant deep defect in CZTSSe materials exhibits donor characteristics. We propose that incomplete cation exchange during the multi-step crystallization reactions of CZTSSe is the kinetics mechanism responsible for the defect formation. To address this issue, we introduce an elemental synergistic alloying approach aimed at weakening the metal-chalcogen bond strength and the stability of intermediate phases. This alloying strategy has facilitated the kinetics of cation exchange, leading to a significant reduction in charge losses within the CZTSSe absorber. As a result, we have achieved a cell efficiency of over 14.5%. These results represent a significant advancement for emerging inorganic solar cells and additionally bring more opportunities for the precise identification and regulation of defects in a wider range of multinary inorganic compounds.
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Submitted 26 June, 2023;
originally announced June 2023.
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14 Examples of How LLMs Can Transform Materials Science and Chemistry: A Reflection on a Large Language Model Hackathon
Authors:
Kevin Maik Jablonka,
Qianxiang Ai,
Alexander Al-Feghali,
Shruti Badhwar,
Joshua D. Bocarsly,
Andres M Bran,
Stefan Bringuier,
L. Catherine Brinson,
Kamal Choudhary,
Defne Circi,
Sam Cox,
Wibe A. de Jong,
Matthew L. Evans,
Nicolas Gastellu,
Jerome Genzling,
María Victoria Gil,
Ankur K. Gupta,
Zhi Hong,
Alishba Imran,
Sabine Kruschwitz,
Anne Labarre,
Jakub Lála,
Tao Liu,
Steven Ma,
Sauradeep Majumdar
, et al. (28 additional authors not shown)
Abstract:
Large-language models (LLMs) such as GPT-4 caught the interest of many scientists. Recent studies suggested that these models could be useful in chemistry and materials science. To explore these possibilities, we organized a hackathon.
This article chronicles the projects built as part of this hackathon. Participants employed LLMs for various applications, including predicting properties of mole…
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Large-language models (LLMs) such as GPT-4 caught the interest of many scientists. Recent studies suggested that these models could be useful in chemistry and materials science. To explore these possibilities, we organized a hackathon.
This article chronicles the projects built as part of this hackathon. Participants employed LLMs for various applications, including predicting properties of molecules and materials, designing novel interfaces for tools, extracting knowledge from unstructured data, and developing new educational applications.
The diverse topics and the fact that working prototypes could be generated in less than two days highlight that LLMs will profoundly impact the future of our fields. The rich collection of ideas and projects also indicates that the applications of LLMs are not limited to materials science and chemistry but offer potential benefits to a wide range of scientific disciplines.
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Submitted 14 July, 2023; v1 submitted 9 June, 2023;
originally announced June 2023.
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Vanadium-Based Superconductivity in a Breathing Kagome Compound Ta2V3.1Si0.9
Authors:
HongXiong Liu,
JingYu Yao,
JianMin Shi,
ZhiLong Yang,
DaYu Yan,
Yong Li,
DaiHong Chen,
Hai L Feng,
ShiLiang Li,
ZhiJun Wang,
YouGuo Shi
Abstract:
Superconductivity in V-based kagome metals has recently raised great interest as they exhibit the competing ground states associated with the flat bands and topological electronic structures. Here we report the discovery of superconductivity in Ta2V3.1Si0.9 with a superconducting transition temperature Tc of 7.5 K, much higher than those in previously reported kagome metals at ambient pressure. Wh…
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Superconductivity in V-based kagome metals has recently raised great interest as they exhibit the competing ground states associated with the flat bands and topological electronic structures. Here we report the discovery of superconductivity in Ta2V3.1Si0.9 with a superconducting transition temperature Tc of 7.5 K, much higher than those in previously reported kagome metals at ambient pressure. While the V ions form a two-dimensional breathing kagome structure, the length difference between two different V-V bonds is just 0.04, making it very close to the perfect kagome structure. Our results show that Ta2V3.1Si0.9 is a moderate-coupled superconductor with a large upper critical field that is close to the Pauli limit. DFT calculations give a van-Hove-singularity band located at Fermi energy, which may explain the relatively high Tc observed in this material.
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Submitted 6 June, 2023; v1 submitted 5 June, 2023;
originally announced June 2023.
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Magnetic States of Graphene Proximitized Kitaev Materials
Authors:
Jingtian Shi,
A. H. MacDonald
Abstract:
Single layer $α$-ruthenium trichloride ($\rmα-RuCl_3$) has been proposed as a potential quantum spin liquid. Graphene/$\rm RuCl_3$ heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of $\rm RuCl_3$ layer and graphene electronic properties. We perform self-c…
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Single layer $α$-ruthenium trichloride ($\rmα-RuCl_3$) has been proposed as a potential quantum spin liquid. Graphene/$\rm RuCl_3$ heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of $\rm RuCl_3$ layer and graphene electronic properties. We perform self-consistent Hartree-Fock calculations on a Hubbard-Kanamori model of the $4d^5$ $t_{2g}$ electrons of $\rmα-RuCl_3$ and confirm that out-of-plane ferromagnetic and zigzag antiferromagnetic states are energetically competitive. We show that the influence of hybridization between graphene and $\rmα-RuCl_3$ bands is strongly sensitive to the magnetic configuration of $\rm RuCl_3$ and the relative orientations of the two layers. We argue that strong hybridization leads to graphene magneto-resistance and that it may tilt the balance between closely competing magnetic states. Our analysis can be applied to any van der Waals heterobilayer system with weak interlayer hybridization and allows for arbitrary lattice constant mismatch and relative orientation.
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Submitted 19 July, 2023; v1 submitted 20 May, 2023;
originally announced May 2023.
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A Computational Approach for Mapping Electrochemical Activity of Multi-Principal Element Alloys
Authors:
Jodie A. Yuwono,
Xinyu Li,
Tyler D. Doležal,
Adib J. Samin,
Javen Qinfeng Shi,
Zhipeng Li,
Nick Birbilis
Abstract:
Multi principal element alloys (MPEAs) comprise a unique class of metal alloys. MPEAs have been demonstrated to possess several exceptional properties, including, as most relevant to the present study, a high corrosion resistance. In the context of MPEA design, the vast number of potential alloying elements and the staggering number of elemental combinations favours a computational alloy design ap…
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Multi principal element alloys (MPEAs) comprise a unique class of metal alloys. MPEAs have been demonstrated to possess several exceptional properties, including, as most relevant to the present study, a high corrosion resistance. In the context of MPEA design, the vast number of potential alloying elements and the staggering number of elemental combinations favours a computational alloy design approach. In order to computationally assess the prospective corrosion performance of MPEA, an approach was developed in this study. A density functional theory (DFT) based Monte Carlo method was used for the development of MPEA structure, with the AlCrTiV alloy used as a model. High-throughput DFT calculations were performed to create training datasets for surface activity towards different adsorbate species: O2-, Cl- and H+. Machine learning (ML) with combined representation was then utilised to predict the adsorption and vacancy energies as descriptors for surface activity. The capability of the combined computational methods of MC, DFT and ML, as a virtual electrochemical performance simulator for MPEAs was established and may be useful in exploring other MPEAs.
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Submitted 19 May, 2023;
originally announced May 2023.
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Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
Jinlin Wang,
Licheng Lou,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strate…
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Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages of environmental friendliness, low cost, and multi-scenario applications, and have drawn extensive attention in recent years. Compared with rigid devices, the lack of alkali metal elements in the flexible substrate is the main factor limiting the performance of flexible CZTSSe solar cells. This work proposes a Rb ion additive strategy to simultaneously regulate the CZTSSe film surface properties and the CdS chemical bath deposition (CBD) processes. Material and chemical characterization reveals that Rb ions can passivate the detrimental Se0 cluster defect and additionally provide a more active surface for the CdS epitaxial growth. Furthermore, Rb can also coordinate with thiourea (TU) in the CBD solution and improve the ion-by-ion deposition of the CdS layer. Finally, the flexible CZTSSe cell fabricated by this strategy has reached a high total-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOC and FF reaching 538 mV and 0.70, respectively. This work enriches the alkali metal passivation strategies and provides new ideas for further improving flexible CZTSSe solar cells in the future.
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Submitted 10 May, 2023;
originally announced May 2023.
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Coexistence of Superconductivity and Superionicity in Li$_2$MgH$_{16}$
Authors:
Haoran Chen,
Junren Shi
Abstract:
We study superconductivity in the superionic phase of the clathrate hydride Li$_2$MgH$_{16}$, where hydrogen ions diffuse among the lattice formed by lithium and magnesium ions. By employing the stochastic path-integral approach, we non-perturbatively take into account the effects of quantum diffusion and anharmonic vibrations. Our calculations reveal strong electron-ion coupling ($λ(0)$ = 3.7) an…
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We study superconductivity in the superionic phase of the clathrate hydride Li$_2$MgH$_{16}$, where hydrogen ions diffuse among the lattice formed by lithium and magnesium ions. By employing the stochastic path-integral approach, we non-perturbatively take into account the effects of quantum diffusion and anharmonic vibrations. Our calculations reveal strong electron-ion coupling ($λ(0)$ = 3.7) and a high superconducting transition temperature ($T_c$) of 277 K under 260 GPa, at which the material is still superionic. $T_c$ is significantly suppressed compared with the result $T_c$ = 473 K obtained from the conventional approach based on the harmonic approximation. Our study, based on a first-principles approach applicable to superionic systems, indicates that the superconductivity and superionicity can coexist in Li$_2$MgH$_{16}$.
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Submitted 12 June, 2024; v1 submitted 8 May, 2023;
originally announced May 2023.
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Inverse design of artificial skins
Authors:
Zhiguang Liu,
Minkun Cai,
Shenda Hong,
Junli Shi,
Sai Xie,
Chang Liu,
Huifeng Du,
James D. Morin,
Gang Li,
Wang Liu,
Hong Wang,
Ke Tang,
Nicholas X. Fang,
Chuan Fei Guo
Abstract:
Mimicking the perceptual functions of human cutaneous mechanoreceptors, artificial skins or flexible pressure sensors can transduce tactile stimuli to quantitative electrical signals. Conventional methods to design such devices follow a forward structure-to-property routine based on trial-and-error experiments/simulations, which take months or longer to determine one solution valid for one specifi…
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Mimicking the perceptual functions of human cutaneous mechanoreceptors, artificial skins or flexible pressure sensors can transduce tactile stimuli to quantitative electrical signals. Conventional methods to design such devices follow a forward structure-to-property routine based on trial-and-error experiments/simulations, which take months or longer to determine one solution valid for one specific material. Target-oriented inverse design that shows far higher output efficiency has proven effective in other fields, but is still absent for artificial skins because of the difficulties in acquiring big data. Here, we report a property-to-structure inverse design of artificial skins based on small dataset machine learning, exhibiting a comprehensive efficiency at least four orders of magnitude higher than the conventional routine. The inverse routine can predict hundreds of solutions that overcome the intrinsic signal saturation problem for linear response in hours, and the solutions are valid to a variety of materials. Our results demonstrate that the inverse design allowed by small dataset is an efficient and powerful tool to target multifarious applications of artificial skins, which can potentially advance the fields of intelligent robots, advanced healthcare, and human-machine interfaces.
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Submitted 10 April, 2023;
originally announced April 2023.
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Giant room-temperature nonlinearities from a monolayer Janus topological semiconductor
Authors:
Jiaojian Shi,
Haowei Xu,
Christian Heide,
Changan HuangFu,
Chenyi Xia,
Felipe de Quesada,
Hongzhi Shen,
Tianyi Zhang,
Leo Yu,
Amalya Johnson,
Fang Liu,
Enzheng Shi,
Liying Jiao,
Tony Heinz,
Shambhu Ghimire,
Ju Li,
Jing Kong,
Yunfan Guo,
Aaron M. Lindenberg
Abstract:
Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and topological properties, such as Berry curvature and the quantum metric tensor, have stimulated great interest. Here, we report giant room-temperature nonlinearities in an emergent non-centrosymmetric two-di…
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Nonlinear optical materials possess wide applications, ranging from terahertz and mid-infrared detection to energy harvesting. Recently, the correlations between nonlinear optical responses and topological properties, such as Berry curvature and the quantum metric tensor, have stimulated great interest. Here, we report giant room-temperature nonlinearities in an emergent non-centrosymmetric two-dimensional topological material, the Janus transition metal dichalcogenides in the 1T' phase, which are synthesized by an advanced atomic-layer substitution method. High harmonic generation, terahertz emission spectroscopy, and second harmonic generation measurements consistently reveal orders-of-the-magnitude enhancement in terahertz-frequency nonlinearities of 1T' MoSSe (e.g., > 50 times higher than 2H MoS$_2$ for 18th order harmonic generation; > 20 times higher than 2H MoS$_2$ for terahertz emission). It is elucidated that such colossal nonlinear optical responses come from topological band mixing and strong inversion symmetry breaking due to the Janus structure. Our work defines general protocols for designing materials with large nonlinearities and preludes the applications of topological materials in optoelectronics down to the monolayer limit. This two-dimensional form of topological materials also constitute a unique platform for examining origin of the anomalous high-harmonic generation, with potential applications as building blocks for scalable attosecond sources.
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Submitted 3 April, 2023;
originally announced April 2023.
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Solution-phase single-particle spectroscopy for probing multi-polaronic dynamics in quantum emitters at femtosecond resolution
Authors:
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Weiwei Sun,
Anudeep Mangu,
Cindy Shi,
Amy McKeown-Green,
Parivash Moradifar,
Moungi G. Bawendi,
William E. Moerner,
Jennifer A. Dionne,
Fang Liu,
Aaron M. Lindenberg
Abstract:
The development of many optical quantum technologies depends on the availability of solid-state single quantum emitters with near-perfect optical coherence. However, a standing issue that limits systematic improvement is the significant sample heterogeneity and lack of mechanistic understanding of microscopic energy flow at the single emitter level and ultrafast timescales. Here we develop solutio…
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The development of many optical quantum technologies depends on the availability of solid-state single quantum emitters with near-perfect optical coherence. However, a standing issue that limits systematic improvement is the significant sample heterogeneity and lack of mechanistic understanding of microscopic energy flow at the single emitter level and ultrafast timescales. Here we develop solution-phase single-particle pump-probe spectroscopy with photon correlation detection that captures sample-averaged dynamics in single molecules and/or defect states with unprecedented clarity at femtosecond resolution. We apply this technique to single quantum emitters in two-dimensional hexagonal boron nitride, which suffers from significant heterogeneity and low quantum efficiency. From millisecond to nanosecond timescales, the translation diffusion, metastable-state-related bunching shoulders, rotational dynamics, and antibunching features are disentangled by their distinct photon-correlation timescales, which collectively quantify the normalized two-photon emission quantum yield. Leveraging its femtosecond resolution, spectral selectivity and ultralow noise (two orders of magnitude improvement over solid-state methods), we visualize electron-phonon coupling in the time domain at the single defect level, and discover the acceleration of polaronic formation driven by multi-electron excitation. Corroborated with results from a theoretical polaron model, we show how this translates to sample-averaged photon fidelity characterization of cascaded emission efficiency and optical decoherence time. Our work provides a framework for ultrafast spectroscopy in single emitters, molecules, or defects prone to photoluminescence intermittency and heterogeneity, opening new avenues of extreme-scale characterization and synthetic improvements for quantum information applications.
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Submitted 3 April, 2023;
originally announced April 2023.
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Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells
Authors:
Xiao Xu,
Jiazheng Zhou,
Kang Yin,
Jinlin Wang,
Licheng Lou,
Menghan Jiao,
Bowen Zhang,
Dongmei Li,
Jiangjian Shi,
Huijue Wu,
Yanhong Luo,
Qingbo Meng
Abstract:
Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-seleniz…
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Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-selenization is dependent on various factors (e.g. temperature, precursor composition, reaction atmosphere, etc).However, synergistic regulation of these factors cannot be realized under a widely-used single-temperature zone selenization condition.Here, in our dual-temperature zone selenization scheme, a solid-liquid and solid-gas (solid precursor and liquid/gas phase Se) synergistic reaction strategy has been developed to precisely regulate the selenization. Pre-deposited excess liquid Se provides high Se chemical potential to drive a direct and fast formation of the CZTSSe phase, significantly reducing the amount of binary and ternary compounds within phase evolution. And organics removal can be accomplished via a synergistic optimization of Se condensation and subsequent volatilization. We achieve a high-performance CZTSSe solar cell with a remarkable PCE of 13.6%, and the highest large-area PCE of 12.0% (over 1cm2). Our strategy will provide a new idea for further improving efficiency of CZTSSe solar cells via phase evolution regulation, and also for other complicated multi-compound synthesis.
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Submitted 4 March, 2023;
originally announced March 2023.
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Emergent charge density wave featuring quasi-one-dimensional chains in Ta-intercalated bilayer 2$H$-TaS$_{2}$ with coexisting superconductivity
Authors:
Tiantian Luo,
Maoping Zhang,
Jifu Shi,
Feipeng Zheng
Abstract:
Recently, intercalation emerges as an effective way to manipulate ground-state properties and enrich quantum phase diagrams of layered transition metal dichalcogenides (TMDCs). In this work, we focus on fully Ta-intercalated bilayer 2$H$-TaS$_{2}$ with a stoichiometry of Ta$_{3}$S$_{4}$, which has recently been experimentally synthesized. Based on first-principles calculations, we computationally…
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Recently, intercalation emerges as an effective way to manipulate ground-state properties and enrich quantum phase diagrams of layered transition metal dichalcogenides (TMDCs). In this work, we focus on fully Ta-intercalated bilayer 2$H$-TaS$_{2}$ with a stoichiometry of Ta$_{3}$S$_{4}$, which has recently been experimentally synthesized. Based on first-principles calculations, we computationally show the suppression of an intrinsic $3\times3$ charge-density wave (CDW) in the TaS$_{2}$ layer, and the emergence of a $2\times1$ CDW in intercalated Ta layer. The formation of the CDW in Ta$_{3}$S$_{4}$ is triggered by strong electron-phonon coupling (EPC) between the $d$-like orbitals of intercalated Ta atoms via the imaginary phonon modes at M point. A 2$\times$1 CDW structure is identified, featuring quasi-one-dimensional Ta chains, attributable to the competition between the CDW displacements associated with potential CDW vectors ($\boldsymbol{q}_{\text{CDW}}$s). Superconductivity is found to coexist with the 2$\times$1 CDW in Ta$_{3}$S$_{4}$, with an estimated superconducting transition temperature ($T_{\mathrm{c}}$) of 3.0 K, slightly higher than that of bilayer TaS$_{2}$. The Ta$_{3}$S$_{4}$ structures of non-CDW, 2$\times$1 CDW, and $2\times$2 CDW can be switched by strain. Our work enriches the phase diagram of TaS$_{2}$, offers a candidate material for studying the interplay between CDW and superconductivity, and highlights intercalation as an effective way to tune the physical properties of layered materials.
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Submitted 6 April, 2023; v1 submitted 23 February, 2023;
originally announced February 2023.
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Thickness dependence of superconductivity in FeSe films
Authors:
Jia Shi,
Duy Le,
Volodymyr Turkowski,
Naseem Ud Din,
Tao Jiang,
Qiang Gu,
Talat S. Rahman
Abstract:
The films of FeSe on substrates have attracted attention because of their unusually high-temperature (Tc) superconducting properties whose origins continue to be debated. To disentangle the competing effects of the substrate and interlayer and intralayer processes, we present here results of density functional theory (DFT)-based analysis of the electronic structure of unsupported FeSe films consis…
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The films of FeSe on substrates have attracted attention because of their unusually high-temperature (Tc) superconducting properties whose origins continue to be debated. To disentangle the competing effects of the substrate and interlayer and intralayer processes, we present here results of density functional theory (DFT)-based analysis of the electronic structure of unsupported FeSe films consisting of 1 to 5 layers (1L-5L). Furthermore, by solving the Bardeen-Schrieffer-Cooper (BCS) equation with spin-wave exchange attraction derived from the Hubbard model, we find the superconducting critical temperature Tc for 1L-5L and bulk FeSe systems in reasonable agreement with experimental data. Our results point to the importance of correlation effects in superconducting properties of single- and multi-layer FeSe films, independently of the role of substrate.
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Submitted 19 February, 2023;
originally announced February 2023.
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Dark exciton energy splitting in monolayer WSe2: insights from time-dependent density-functional theory
Authors:
Jia Shi,
Volodymyr Turkowski,
Duy Le,
Talat S. Rahman
Abstract:
We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of an appropriate exchange-correlation kernel (nanoquanta), we trace the energy difference between the intra- and inter-valley dark excitons in monolayer (1L) WSe…
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We present here a formalism based on time-dependent density-functional theory (TDDFT) to describe characteristics of both intra- and inter-valley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of an appropriate exchange-correlation kernel (nanoquanta), we trace the energy difference between the intra- and inter-valley dark excitons in monolayer (1L) WSe2 to the domination of the exchange part in the exchange-correlation energies of these states. Furthermore, our calculated transition contribution maps establish the momentum resolved weights of the electron-hole excitations in both bright and dark excitons thereby providing a comprehensive understanding of excitonic properties of 1L WSe2. We find that the states consist of hybridized excitations around the corresponding valleys which leads to brightening of the dark excitons, i.e., significantly decreasing their lifetime which is reflected in the PL spectrum. Using many-body perturbation theory, we calculate the phonon contribution to the energy bandgap and the linewidths of the excited electrons, holes and (bright) exciton to find that as the temperature increases the bandgap significantly decreases, while the linewidths increase. Our work paves for describing the ultrafast charge dynamics of transition metal dichalcogenide within an ab initio framework.
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Submitted 16 February, 2023;
originally announced February 2023.
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Metal-bonded perovskite lead hydride with phonon-mediated superconductivity up to 46 K under atmospheric pressure
Authors:
Yong He,
Juan Du,
Shi-ming Liu,
Chong Tian,
Wen-hui Guo,
Min Zhang,
Yao-hui Zhu,
Hong-xia Zhong,
Xinqiang Wang,
Jun-jie Shi
Abstract:
In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature sup…
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In the search for high-temperature superconductivity in hydrides, a plethora of multi-hydrogen superconductors have been theoretically predicted, and some have been synthesized experimentally under ultrahigh pressures of several hundred GPa. However, the impracticality of these high-pressure methods has been a persistent issue. In response, we propose a new approach to achieve high-temperature superconductivity under atmospheric pressure by implanting hydrogen into lead to create a stable few-hydrogen metal-bonded perovskite, Pb$_4$H. This approach diverges from the popular design methodology of multi-hydrogen covalent high critical temperature ($T_c$) superconductors under ultrahigh pressure. By solving the anisotropic Migdal-Eliashberg (ME) equations, we demonstrate that perovskite Pb$_4$H is a typical phonon-mediated superconductor with a $T_c$ of 46 K, which is six times higher than that of bulk Pb (7.22 K) and higher than that of MgB$_2$ (39 K). The high $T_c$ can be attributed to the strong electron-phonon coupling (EPC) strength of 2.45, which arises from hydrogen implantation in lead that induces several high-frequency optical phonon modes with a relatively large phonon linewidth resulting from H atom vibration. The metallic-bonding in perovskite Pb$_4$H not only improves the structural stability but also guarantees better ductility than the widely investigated multi-hydrogen, iron-based, and cuprate superconductors. These results suggest that there is potential for the exploration of new high-temperature superconductors under atmospheric pressure and may reignite interest in their experimental synthesis soon.
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Submitted 17 April, 2023; v1 submitted 10 February, 2023;
originally announced February 2023.
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Al-Based Few-Hydrogen Metal-Bonded Perovskite High-$T_c$ Superconductor Al$_4$H up to 54 K under Atmospheric Pressure
Authors:
Yong He,
Jing Lu,
Xinqiang Wang,
Jun-jie Shi
Abstract:
Multi-hydrogen lanthanum hydrides have shown the highest critical temperature $T_c$ at 250-260 K under 170-200 GPa. However, such high pressure is a great challenge for sample preparation and practical application. To address this challenge, we propose a novel design strategy for ambient-pressure high-$T_c$ superconductors by constructing new few-hydrogen metal-bonded perovskite hydrides, such as…
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Multi-hydrogen lanthanum hydrides have shown the highest critical temperature $T_c$ at 250-260 K under 170-200 GPa. However, such high pressure is a great challenge for sample preparation and practical application. To address this challenge, we propose a novel design strategy for ambient-pressure high-$T_c$ superconductors by constructing new few-hydrogen metal-bonded perovskite hydrides, such as Al-based superconductor $\rm {Al_4H}$, with better ductility than the well-known multi-hydrogen, cuprate and Fe-based superconductors. Based on the Migdal-Eliashberg theory, we predict that the structurally stable $\rm {Al_4H}$ has a favorable high $T_c$ up to 54 K under atmospheric pressure, similar to SmOFeAs.
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Submitted 19 August, 2023; v1 submitted 21 January, 2023;
originally announced January 2023.
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Transfer Learning Facilitates the Prediction of Polymer-Surface Adhesion Strength
Authors:
Jiale Shi,
Fahed Albreiki,
Yamil J. Colón,
Samanvaya Srivastava,
Jonathan K. Whitmer
Abstract:
Machine learning (ML) accelerates the exploration of material properties and their links to the structure of the underlying molecules. In previous work [J. Shi, M. J. Quevillon, P. H. A. Valença, and J. K. Whitmer, \textit{ACS Appl. Mater. Interfaces.}, 2022, 14, 32, 37161--37169], ML models were applied to predict the adhesive free energy of polymer--surface interactions with high accuracy from t…
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Machine learning (ML) accelerates the exploration of material properties and their links to the structure of the underlying molecules. In previous work [J. Shi, M. J. Quevillon, P. H. A. Valença, and J. K. Whitmer, \textit{ACS Appl. Mater. Interfaces.}, 2022, 14, 32, 37161--37169], ML models were applied to predict the adhesive free energy of polymer--surface interactions with high accuracy from the knowledge of the sequence data, demonstrating successes in inverse-design of polymer sequence for known surface compositions. While the method was shown to be successful in designing polymers for a known surface, extensive datasets were needed for each specific surface in order to train the surrogate models. Ideally, one should be able to infer information about similar surfaces without having to regenerate a full complement of adhesion data for each new case. In the current work, we demonstrate a transfer learning (TL) technique using a deep neural network to improve the accuracy of ML models trained on small datasets by pre-training on a larger database from a related system and fine-tuning the weights of all layers with a small amount of additional data. The shared knowledge from the pre-trained model facilitates the prediction accuracy significantly on small datasets. We also explore the limits of database size on accuracy and the optimal tuning of network architecture and parameters for our learning tasks. While applied to a relatively simple coarse-grained (CG) polymer model, the general lessons of this study apply to detailed modeling studies and the broader problems of inverse materials design.
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Submitted 5 January, 2023;
originally announced January 2023.
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In-situ electrical and thermal transport properties of FeySe1-xTex films with ionic liquid gating
Authors:
Juan Xu,
Mingyang Qin,
Zefeng Lin,
Xu Zhang,
Ruozhou Zhang,
Li Xu,
Liping Zhang,
Qiuyan Shi,
Jie Yuan,
Beiyi Zhu,
Chao Dong,
Rui Xiong,
Qihong Chen,
Yangmu Li,
Jing Shi,
Kui Jin
Abstract:
We combine in-situ electrical transport and Seebeck coefficient measurements with the ionic liquid gating technique to investigate superconductivity and the normal state of FeySe1-xTex (FST) films. We find that the pristine FST films feature a non-Fermi liquid temperature dependence of the Seebeck coefficient, i.e., S/T ~ AS lnT, and AS is strongly correlated with the superconducting transition te…
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We combine in-situ electrical transport and Seebeck coefficient measurements with the ionic liquid gating technique to investigate superconductivity and the normal state of FeySe1-xTex (FST) films. We find that the pristine FST films feature a non-Fermi liquid temperature dependence of the Seebeck coefficient, i.e., S/T ~ AS lnT, and AS is strongly correlated with the superconducting transition temperature (Tc). Ionic liquid gating significantly raises Tc of FST films, for which the Seebeck coefficient displays a novel scaling behavior and retains the logarithmic temperature dependence. Moreover, a quantitative relationship between the slope of T-linear resistivity (A\r{ho}) and Tc for gated films is observed, i.e., (A\r{ho})1/2 ~ Tc, consistent with previous reports on cuprates and FeSe. The scaling behaviors of AS and A\r{ho} point to a spin-fluctuation-associated transport mechanism in gated FeySe1-xTex superconductors.
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Submitted 5 January, 2023;
originally announced January 2023.
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Quantum anomalous Hall insulator of composite fermions in twisted bilayer graphene
Authors:
Guangyue Ji,
Junren Shi
Abstract:
Abstract We theoretically study the realization of quantum anomalous Hall insulator (QAHI) of composite fermions (CFs) in the twisted bilayer graphene (TBG) system. We show that the moiré pattern in TBG is not only able to provide a commensurate moiré superlattice, but also a tunable effective periodic potential necessary for the realization, without the need of imposing an additional superstructu…
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Abstract We theoretically study the realization of quantum anomalous Hall insulator (QAHI) of composite fermions (CFs) in the twisted bilayer graphene (TBG) system. We show that the moiré pattern in TBG is not only able to provide a commensurate moiré superlattice, but also a tunable effective periodic potential necessary for the realization, without the need of imposing an additional superstructure as in the conventional GaAs system. These make the TBG an ideal platform for realizing the QAHI of CFs. We establish the phase diagram with respect to tunable experimental parameters based on the Dirac CF theory. We find that the topological property of the system depends critically on the orbital magnetic susceptibility of CFs, which is not specified in the pristine Dirac CF theory. The experimental realization of QAHI of CFs would be helpful for unveiling the magnetic property of CFs and clarifying the issue.
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Submitted 26 December, 2022;
originally announced December 2022.
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Accelerating quantum materials development with advances in transmission electron microscopy
Authors:
Parivash Moradifar,
Yin Liu,
Jiaojian Shi,
Matti Lawton Siukola Thurston,
Hendrik Utzat,
Tim B. van Driel,
Aaron M. Lindenberg,
Jennifer A. Dionne
Abstract:
Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, quantum dots, color center hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, mag…
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Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, quantum dots, color center hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the materials detailed atomic scale structure, including atomic defects, dopants, and lattice stacking. In this review, after introduction of different classes of quantum materials and quantum excitations, we describe how progress in the field of electron microscopy, including in situ and in operando EM, can accelerate advances in quantum materials. Our review describes EM methods including: i) principles and operation modes of EM, ii) EM spectroscopies, such as electron energy loss spectroscopy, cathodoluminescence, and electron energy gain spectroscopy, iii) 4D scanning transmission electron microscopy, iv) dynamic and ultrafast EM, v) complimentary ultrafast spectroscopies, and vi) atomic electron tomography. We discuss how these methods inform structure function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable high resolution manipulation of quantum materials. Among numerous results, our review highlights how EM has enabled identification of the 3D structure of quantum defects, measuring reversible and metastable dynamics of quantum excitations, mapping exciton states and single photon emission, measuring nanoscale thermal transport and coupled excitation dynamics, and measuring the internal electric field of quantum heterointerfaces, all at the quantum materials intrinsic atomic and near atomic-length scale.
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Submitted 20 December, 2022;
originally announced December 2022.
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Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5
Authors:
Haitao Yang,
Yuhan Ye,
Zhen Zhao,
Jiali Liu,
Xin-Wei Yi,
Yuhang Zhang,
Jinan Shi,
Jing-Yang You,
Zihao Huang,
Bingjie Wang,
Jing Wang,
Hui Guo,
Xiao Lin,
Chengmin Shen,
Wu Zhou,
Hui Chen,
Xiaoli Dong,
Gang Su,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the s…
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Fabrication of new types of superconductors with novel physical properties has always been a major thread in the research of superconducting materials. An example is the enormous interests generated by the cascade of correlated topological quantum states in the newly discovered vanadium-based kagome superconductors AV3Sb5 (A=K, Rb, and Cs) with a Z2 topological band structure. Here we report the successful fabrication of single-crystals of titanium-based kagome metal CsTi3Bi5 and the observation of superconductivity and electronic nematicity. The onset of the superconducting transition temperature Tc is around 4.8 K. In sharp contrast to the charge density wave superconductor AV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translation symmetry, but breaks rotational symmetry and exhibits an electronic nematicity. The angular-dependent magnetoresistivity shows a remarkable two-fold rotational symmetry as the magnetic field rotates in the kagome plane. The scanning tunneling microscopy and spectroscopic imaging detect rotational-symmetry breaking C2 quasiparticle interference patterns (QPI) at low energies, providing further microscopic evidence for electronic nematicity. Combined with first-principle calculations, we find that the nematic QPI is orbital-selective and dominated by the Ti dxz and dyz orbitals, possibly originating from the intriguing orbital bond nematic order. Our findings in the new "135" material CsTi3Bi5 provide new directions for exploring the multi-orbital correlation effect and the role of orbital or bond order in the electron liquid crystal phases evidenced by the symmetry breaking states in kagome superconductors.
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Submitted 22 November, 2022;
originally announced November 2022.
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A precisely regulating phase evolution strategy for highly efficient kesterite solar cells
Authors:
Jiazheng Zhou,
Xiao Xu,
Huijue Wu,
Jinlin Wang,
Licheng Lou,
Kang Yin,
Yuancai Gong,
Jiangjian Shi,
Yanhong Luo,
Dongmei Li,
Hao Xin,
Qingbo Meng
Abstract:
Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temper…
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Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temperature region, which effectively reduces collision probability between the CZTS and Se atoms, thus remarkably inhibiting formation of secondary phases on the surface and multiple-step phase evolution processes. This strategy enables the phase evolution to start at relatively higher temperature and thereby leading to high crystalline quality CZTSSe absorber with fewer defects, and corresponding CZTSSe solar cell can present 14.1% efficiency (total area), which is the highest result so far. This work provides important insights into selenization mechanism of CZTSSe absorbers and explores a new way of kinetic regulation strategy to simplify the phase evolution path to efficient CZTSSe solar cells.
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Submitted 24 October, 2022;
originally announced October 2022.
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Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures
Authors:
Jarosław Pawłowski,
John Eric Tiessen,
Rockwell Dax,
Junxia Shi
Abstract:
We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable)…
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We explore a solid state qubit defined on valley isospin of an electron confined in a gate-defined quantum dot created in an area of monolayer MoS$_2$/WS$_2$ lateral junction, where a steep dipolar potential emerges. We show that the junction oriented along an armchair direction can induce intervalley transitions of the electron confined in the neighboring quantum dot when the (gate-controllable) overlapping with the junction is significant and pumping frequency tuned. The pumping scheme that induces transitions is all-electrical: obtained by applying oscillating voltages to control gates and thus enables for scalable qubit architectures. We also report another possibility of valley-qubit manipulation by accumulating non-Abelian valley Berry phase. To model nanodevice we solve the time-dependent Schrödinger-Poisson equations in a tight-binding approach and obtain exact time-evolution of the valley-qubit system.
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Submitted 29 December, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Authors:
Hui Li,
Junbo Yang,
Xiaohui Li,
Mo Cheng,
Wang Feng,
Ruofan Du,
Yuzhu Wang,
Luying Song,
Xia Wen,
Lei Liao,
Yanfeng Zhang,
Jianping Shi,
Jun He
Abstract:
Epitaxial growth and controllable doping of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking…
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Epitaxial growth and controllable doping of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking 4-inch single-crystal Fe-doped TMDCs monolayers on industry-compatible c-plane sapphire without miscut angle. In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional TMDCs domains (>99%). The ultrahigh electron mobility (~86 cm2 V -1 s-1) and remarkable on/off current ratio (~108) are discovered on 4-inch single-crystal Fe-MoS2 monolayers due to the ultralow contact resistance and perfect Ohmic contact with metal electrodes. This work represents a substantial leap in terms of bridging the synthesis and doping of wafer-scale single-crystal 2D semiconductors without the need for substrate miscut, which should promote the further device downscaling and extension of Moore's law.
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Submitted 16 September, 2022;
originally announced September 2022.
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Stochastic path-integral approach for predicting the superconducting temperatures of anharmonic solids
Authors:
Haoran Chen,
Junren Shi
Abstract:
We develop a stochastic path-integral approach for predicting the superconducting transition temperatures of anharmonic solids. By defining generalized Bloch basis, we generalize the formalism of the stochastic path-integral approach, which is originally developed for liquid systems. We implement the formalism for ab initio calculations using the projector augmented-wave method, and apply the impl…
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We develop a stochastic path-integral approach for predicting the superconducting transition temperatures of anharmonic solids. By defining generalized Bloch basis, we generalize the formalism of the stochastic path-integral approach, which is originally developed for liquid systems. We implement the formalism for ab initio calculations using the projector augmented-wave method, and apply the implementation to estimate the superconducting transition temperatures of metallic deuterium and hydrogen sulfide. For metallic deuterium, which is approximately harmonic, our result coincides well with that obtained from the standard approach based on the harmonic approximation and the density functional perturbation theory. For hydrogen sulfide, we find that anharmonicity strongly suppresses the predicted superconducting transition temperature. Compared to the self-consistent harmonic approximation approach, our approach yields a transition temperature closer to the experimentally observed one.
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Submitted 1 November, 2022; v1 submitted 15 May, 2022;
originally announced May 2022.
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Structural and electronic properties of rare earth chromites: A computational and experimental study
Authors:
Jianhang Shi,
Gayanath W. Fernando,
Yanliu Dang,
Steven L. Suib,
Menka Jain
Abstract:
In this work, the structural, optical, and electronic properties of rare-earth perovskites of the general formula RCrO3, where R represents the rare-earth Gd, Tb, Dy, Ho, Er, and Tm, have been studied in detail. These compounds were synthesized through a facile citrate route. X-ray diffraction, Raman spectroscopy, and UV-Vis spectroscopy were used to reveal the structural evolutions in RCrO3. The…
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In this work, the structural, optical, and electronic properties of rare-earth perovskites of the general formula RCrO3, where R represents the rare-earth Gd, Tb, Dy, Ho, Er, and Tm, have been studied in detail. These compounds were synthesized through a facile citrate route. X-ray diffraction, Raman spectroscopy, and UV-Vis spectroscopy were used to reveal the structural evolutions in RCrO3. The lattice parameter, Cr3+-O2--Cr3+ bond angle, and CrO6 octahedral distortions were found to strongly depend on the ionic radii of the rare-earth element. First-principles calculations based on density-functional theory within the generalized gradient approximation (GGA) of Perdew- Burke- Ernzerhof (PBE) and strongly constrained-and-appropriately normed (SCAN) meta-GGA were also employed to calculate the structural and electronic properties of RCrO3. The ground-state energy, lattice constants, electronic structure, and density of states (DOS) of RCrO3 were calculated. These provide some insights into the electronic characteristics of the series of RCrO3 compounds. The calculated values of lattice parameters and band gaps with Hubbard U correction (SCAN+U) agree well with values measured experimentally and show more accuracy in predicting the ground-state crystal structure and band structure compared to PBE+U approximation. The band gap of RCrO3 is found to be independent of the ionic radii of the element R from both experiments and calculations
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Submitted 25 April, 2022;
originally announced April 2022.