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Enhanced light absorption in all-polymer biomimetic photonic structures by near-zero-index organic matter
Authors:
Miguel A. Castillo,
C. Estévez-Varela,
William P. Wardley,
R. Serna,
I. Pastoriza-Santos,
S. Núñez-Sánchez,
Martin Lopez-Garcia
Abstract:
Natural photosynthetic photonic nanostructures can show sophisticated light matter-interactions including enhanced light absorption by slow light even for highly pigmented systems. Beyond fundamental biology aspects these natural nanostructures are very attractive as blueprints for advanced photonic devices. But the soft-matter biomimetic implementations of such nanostructures is challenging due t…
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Natural photosynthetic photonic nanostructures can show sophisticated light matter-interactions including enhanced light absorption by slow light even for highly pigmented systems. Beyond fundamental biology aspects these natural nanostructures are very attractive as blueprints for advanced photonic devices. But the soft-matter biomimetic implementations of such nanostructures is challenging due to the low refractive index contrast of most organic photonic structures. Excitonic organic material with near zero index (NZI) optical properties allow overcoming these bottlenecks. Here we demonstrate that the combination of NZI thin films into photonic multilayers like the ones found in nature enables broadband tuneable strong reflectance as well as slow light absorption enhancement and tailored photoluminescence properties in the full VIS spectrum. Moreover, it is shown that this complex optical response is tuneable, paving the way towards the development of active devices based on all polymer and near zero index materials photonic structures.
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Submitted 30 November, 2021;
originally announced November 2021.
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Deep UV laser induced periodic surface structures on silicon formed by self-organization of nanoparticles
Authors:
Raul Zazo,
Javier Solis,
José A. Sanchez-Gil,
Rocio Ariza,
Rosalia Serna,
Jan Siegel
Abstract:
We have investigated the formation of laser-induced periodic surface structures (LIPSS or ripples) on silicon upon excitation with p-polarized excimer laser pulses in the deep ultraviolet region (wavelength = 193 nm, pulse duration = 20 ns). Well-pronounced ripples with a period close to the laser wavelength were observed for pulse numbers N = 100 or higher, and the ripple period increased with th…
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We have investigated the formation of laser-induced periodic surface structures (LIPSS or ripples) on silicon upon excitation with p-polarized excimer laser pulses in the deep ultraviolet region (wavelength = 193 nm, pulse duration = 20 ns). Well-pronounced ripples with a period close to the laser wavelength were observed for pulse numbers N = 100 or higher, and the ripple period increased with the angle of incidence. While these results seem to be qualitatively consistent with the standard Sipe-theory, we observed a fundamentally different ripple formation mechanism and ripple morphology. At low pulse numbers, isolated nanoparticles with a size of a few tens of nanometers are observed at the silicon surface, which then start to agglomerate in 2D and self-organize to form ripples with a very shallow modulation depth as the pulse number increases. Employing a recently developed plasmonic model based on the propagation of a surface plasmon polariton on a rough surface, we demonstrate excellent quantitative agreement of the evolution of the ripple period with incidence angle. Finally, we show that surface regions exposed to lower laser fluence feature micro- and nanopores, which give rise to pronounced photoluminescence (PL) emission in the visible spectral region, as opposed to the nanoparticle-based ripples not showing PL.
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Submitted 27 October, 2020;
originally announced November 2020.
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Tuning the period of femtosecond laser induced surface structures in steel: from angled incidence to quill writing
Authors:
Yasser Fuentes-Edfuf,
José A. Sánchez-Gil,
Marina Garcia Pardo,
Rosalía Serna,
George D. Tsibidis,
Vincenzo Giannini,
Javier Solis,
Jan Siegel
Abstract:
Exposure of metal surfaces to multiple ultrashort laser pulses under certain conditions leads to the formation of well-defined periodic surface structures. We show how the period of such structures in steel can be tuned over a wide range by controlling the complex interaction mechanisms triggered in the material. Amongst the different irradiation parameters that influence the properties of the ind…
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Exposure of metal surfaces to multiple ultrashort laser pulses under certain conditions leads to the formation of well-defined periodic surface structures. We show how the period of such structures in steel can be tuned over a wide range by controlling the complex interaction mechanisms triggered in the material. Amongst the different irradiation parameters that influence the properties of the induced structures, the angle of incidence of the laser beam occupies a prominent role. We present an experimental and theoretical investigation of this angle dependence in steel upon irradiation with laser pulses of 120 fs duration and 800 nm wavelength, while moving the sample at constant speed. Our findings can be grouped into two blocks. First, we observe the spatial coexistence of two different ripple periods at the steel surface, both featuring inverse scaling upon angle increase, which are related to forward and backward propagation of surface plasmon polaritons. To understand the underlying physical phenomena, we extend a recently developed model that takes into account quantitative properties of the surface roughness to the case of absorbing metals (large imaginary part of the dielectric function), and obtain an excellent match with the experimentally observed angle dependence. As second important finding, we observe a quill writing effect, also termed non-reciprocal writing, in form of a significant change of the ripple period upon reversing the sample movement direction. This remarkable phenomenon has been observed so far only inside dielectric materials and our work underlines its importance also in laser surface processing. We attribute the origin of symmetry breaking to the non-symmetric micro- and nanoscale roughness induced upon static multiple pulse irradiation, leading to non-symmetric modification of the wavevector of the coupled surface plasmon polariton.
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Submitted 27 October, 2020;
originally announced October 2020.
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Active analog tuning of the phase of light in the visible regime by bismuth-based metamaterials
Authors:
Marina Garcia-Pardo,
Eva Nieto Pinero,
Amanda K. Petford-Long,
Rosalia Serna,
Johann Toudert
Abstract:
Active and analog tuning of the phase of light is needed to boost the switching performance of photonic devices. However, demonstrations of this type of tuning in the pivotal visible spectral region are still scarce. Herein we report active analog tuning of the phase of visible light reflected by a bismuth-based metamaterial, enabled by a reversible solid-liquid transition. This metamaterial, fabr…
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Active and analog tuning of the phase of light is needed to boost the switching performance of photonic devices. However, demonstrations of this type of tuning in the pivotal visible spectral region are still scarce. Herein we report active analog tuning of the phase of visible light reflected by a bismuth-based metamaterial, enabled by a reversible solid-liquid transition. This metamaterial, fabricated by a lithography-free approach, consists of two-dimensional assemblies of polydisperse plasmonic bismuth nanostructures embedded in a refractory and transparent aluminum oxide matrix. Analog tuning of the phase is achieved by controlled heating of the metamaterial to melt a fraction of the nanostructures. A maximum tuning of 320 deg (1.8pi) is observed upon complete melting of the nanostructures at 230 degrees Celsius. This tuning is reversible by cooling to 25 degrees Celsius. In addition, it presents a wide hysteretic character due to liquid bismuth undercooling. This enables the phase achieved by this analog approach to remain stable over a broad temperature range upon cooling and until re-solidification occurs around 100 degrees Celsius. Therefore, bismuth-based metamaterials are appealing for applications including optical data storage with enhanced information density or bistable photonic switching with a tunable "on" state.
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Submitted 2 December, 2019;
originally announced December 2019.
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Optical Properties of Bismuth Nanostructures Towards the Ultrathin Film Regime
Authors:
Johann Toudert,
Rosalia Serna,
Claire Deeb,
Esther Rebollar
Abstract:
Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n near 10) and a negative ultraviolet visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing for applications in nanophotonics, the dielectric function of bismuth nanostructures has been scarcely studied. Here, we determine by spectroscopic e…
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Bulk bismuth presents outstanding optical properties, such as a giant infrared refractive index (n near 10) and a negative ultraviolet visible permittivity induced by giant interband electronic transitions. Although such properties are very appealing for applications in nanophotonics, the dielectric function of bismuth nanostructures has been scarcely studied. Here, we determine by spectroscopic ellipsometry the far infrared to ultraviolet dielectric function of pulsed laser deposited bismuth thin films with nominal thickness tBi varied from near 10 nm to several tens of nm. For tBi above 15 nm, the films display a continuous structure and their dielectric function is comparable with that of bulk bismuth. For tBi below 15 nm, the film structure is discontinuous, and the dielectric function differs markedly from that of bulk bismuth. It is proposed from FDTD simulations that this marked difference arises mainly from effective medium effects induced by the discontinuous film structure, where quantum electronic confinement does not play a dominant role. This suggests that ultrathin and continuous bismuth films should present the same outstanding optical properties as bulk bismuth for high performance nanophotonic devices.
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Submitted 16 April, 2019;
originally announced April 2019.
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Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
Authors:
Javier Martin-Sanchez,
Rinaldo Trotta,
Antonio Mariscal,
Rosalia Serna,
Giovanni Piredda,
Sandra Stroj,
Johannes Edlinger,
Christian Schimpf,
Johannes Aberl,
Thomas Lettner,
Johannes Wildmann,
Huiying Huang,
Xueyong Yuan,
Dorian Ziss,
Julian Stangl,
Armando Rastelli
Abstract:
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to…
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The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
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Submitted 19 October, 2017;
originally announced October 2017.
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Highly oriented EuO nanocrystalline films via reduction process - NIR optical response
Authors:
Antonio Mariscal,
Adrián Quesada,
Aitana Tarazaga Martín-Luengo,
Miguel Ángel García,
Alberta Bonanni,
José Fernández,
Rosalia Serna
Abstract:
Nanocrystalline textured EuO thin films are prepared by an oxygen loss process from a pure Eu2O3 bulk ceramic target through pulsed laser deposition in vacuum at room temperature. X-ray diffraction spectra evidence a well-defined diffraction peak corresponding to the EuO phase textured along the (110) direction. Analysis of the XRD peak profile indicates that the films are nanocrystalline (average…
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Nanocrystalline textured EuO thin films are prepared by an oxygen loss process from a pure Eu2O3 bulk ceramic target through pulsed laser deposition in vacuum at room temperature. X-ray diffraction spectra evidence a well-defined diffraction peak corresponding to the EuO phase textured along the (110) direction. Analysis of the XRD peak profile indicates that the films are nanocrystalline (average crystallite size of 11 nm) with a compressive residual strain. The formation of stoichiometric EuO is further confirmed by a strong signal from Eu2+ in the X-ray photoelectron spectra. The complex refractive index in the near infrared has been determined by spectroscopic ellipsometry and shows that the EuO films have a high transparency (k < 10-3) and a refractive index of 2.1. A band-gap shift of 0.25 eV is found with respect to the EuO bulk. These films, deposited by an accessible and efficient method, open a new route to produce EuO films with optical quality, suitable for NIR optoelectronic components.
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Submitted 31 October, 2018; v1 submitted 26 June, 2017;
originally announced June 2017.
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Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers
Authors:
Javier Martín-Sánchez,
Antonio Mariscal,
Marta De Luca,
Aitana Tarazaga Martín-Luengo,
Georg Gramse,
Alma Halilovic,
Rosalía Serna,
Alberta Bonanni,
Ilaria Zardo,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the d…
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Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the development of reliable encapsulation procedures that preserve their physical properties are required. Here, the excitonic photoluminescence of WSe2 monolayer flakes is assessed, at room temperature and 10 K, on mechanically exfoliated flakes encapsulated with SiOx and AlxOy layers employing chemical and physical deposition techniques. Conformal flakes coating on untreated - non-functionalized - flakes is successfully demonstrated by all the techniques except for atomic layer deposition, where a cluster-like oxide coating is observed. No significant compositional or strain state changes in the flakes are detected upon encapsulation by any of the techniques. Remarkably, our results evidence that the flakes' optical emission is strongly influenced by the quality of the encapsulating oxide - stoichiometry -. When the encapsulation is carried out with slightly sub-stoichiometric oxides two remarkable phenomena are observed. First, there is a clear electrical doping of the monolayers that is revealed through a dominant trion - charged exciton - room-temperature photoluminescence. Second, a strong decrease of the monolayers optical emission is measured attributed to non-radiative recombination processes and/or carriers transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation.
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Submitted 17 April, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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All-Optical Nanometric Switch based on the Directional Scattering of Semiconductor Nanoparticles
Authors:
Braulio Garcia-Camara,
J. Francisco Algorri,
Alexander Cuadrado,
Virginia Urruchi,
Jose Manuel Sanchez-Pena,
Rosalia Serna,
Ricardo Vergaz
Abstract:
A structure based on a dimer of silicon nanoparticles, presenting directional scattering in the visible range, was studied as a new design of an all-optical switch. The combination of spherical nanoparticles satisfying, at the same incident wavelength, the zero-backward and the minimum-forward scattering conditions, can produce either a maximum or a minimum of the scattered field in the area betwe…
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A structure based on a dimer of silicon nanoparticles, presenting directional scattering in the visible range, was studied as a new design of an all-optical switch. The combination of spherical nanoparticles satisfying, at the same incident wavelength, the zero-backward and the minimum-forward scattering conditions, can produce either a maximum or a minimum of the scattered field in the area between the nanoparticles. The modulation of the incident wavelength can be used as switching parameter, due to the sensitivity of these conditions to it. An optimization of the dimer setup, both in the distance between the nanoparticles and the incident wavelength, was numerically performed to obtain a maximum contrast. Also, near-field and far-field distributions of the electric field have been considered.
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Submitted 2 July, 2015; v1 submitted 26 June, 2015;
originally announced June 2015.
