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Coherent all-optical control of a solid-state spin via a double $Λ$-system
Authors:
C. Adambukulam,
J. A. Scott,
S. Q. Lim,
I. Aharonovich,
A. Morello,
A. Laucht
Abstract:
All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and pr…
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All-optical control enables fast quantum operations on color center spins that are typically realized via a single Raman transition in a $Λ$-system. Here, we simultaneously drive both Raman transitions in a double $Λ$-system to control the spin of a germanium vacancy (GeV) in diamond. In doing so, we achieve fast operations, observe the quantum interference between the two Raman transitions and probe the GeV coherence ($T_2^*=224\pm14$ ns, $T_2^{\rm H}=11.9\pm0.3$ $μ$s). Importantly, control via a double $Λ$-system is applicable to other color centers and particularly, the group-IV defects in diamond.
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Submitted 4 February, 2024; v1 submitted 31 January, 2024;
originally announced February 2024.
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Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams
Authors:
Madeline Hennessey,
Benjamin Whitefield,
Angus Gale,
John A Scott,
Mehran Kianinia,
Igor Aharonovich,
Milos Toth
Abstract:
Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin…
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Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms that both promote and inhibit VB- generation and optimize ion beam parameters for site-specific fabrication of optically active VB- centers. We emphasize conditions accessible by high resolution focused ion beam (FIB) systems, and present a framework for VB- fabrication in hBN flakes of arbitrary thickness for applications in quantum sensing and quantum information processing.
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Submitted 9 November, 2023; v1 submitted 12 March, 2023;
originally announced March 2023.
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Suppression of surface roughening during ion bombardment of semiconductors
Authors:
John A. Scott,
James Bishop,
Milos Toth
Abstract:
Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, at these conditions, surface roughening is highly pro…
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Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, at these conditions, surface roughening is highly problematic due to thermal mobility of adatoms and surface vacancies. Here we solve this problem using hydrogen gas, which we use to stabilize surface mass flow and suppress roughening during ion bombardment of elemental and compound semiconductors. We achieve smooth surfaces during ion-beam processing, and show that the method can be enhanced by radicalizing H2 gas using a remote plasma source. Our approach is broadly applicable, and expands the utility of ion beam techniques for the processing and fabrication of functional materials and nanostructures.
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Submitted 19 September, 2022; v1 submitted 29 May, 2022;
originally announced May 2022.
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Quantum microscopy with van der Waals heterostructures
Authors:
A. J. Healey,
S. C. Scholten,
T. Yang,
J. A. Scott,
G. J. Abrahams,
I. O. Robertson,
X. F. Hou,
Y. F. Guo,
S. Rahman,
Y. Lu,
M. Kianinia,
I. Aharonovich,
J. -P. Tetienne
Abstract:
Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to mapping remanent magnetic f…
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Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to mapping remanent magnetic fields from ancient rocks and biological organisms. However, applications of quantum microscopes have so far relied on sensors hosted in a rigid, three-dimensional crystal, typically diamond, which limits their ability to closely interact with the sample under study. Here we demonstrate a versatile and robust quantum microscope using quantum sensors embedded within a thin layer of a van der Waals (vdW) material, hexagonal boron nitride (hBN). To showcase the capabilities of this platform, we assemble several active vdW heterostructures, with an hBN layer acting as the quantum sensor. We demonstrate time-resolved, simultaneous temperature and magnetic imaging near the Curie temperature of a vdW ferromagnet as well as apply this unique microscope to map out charge currents and Joule heating in graphene. By enabling intimate proximity between sensor and sample, potentially down to a single atomic layer, the hBN quantum sensor represents a paradigm shift for nanoscale quantum sensing and microscopy. Moreover, given the ubiquitous use of hBN in modern materials and condensed matter physics research, we expect our technique to find rapid and broad adoption in these fields, further motivated by the prospect of performing in-situ chemical analysis and noise spectroscopy using advanced quantum sensing protocols.
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Submitted 6 December, 2021;
originally announced December 2021.
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Charge transition levels of quantum emitters in hexagonal boron nitride
Authors:
Zai-Quan Xu,
Noah Mendelson,
John A. Scott,
Chi Li,
Igor Aharonovich,
Milos Toth
Abstract:
Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of…
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Quantum emitters in layered materials are promising candidates for applications in nanophotonics. Here we present a technique based on charge transfer to graphene for measuring the charge transition levels ($\rm E_t$) of fluorescent defects in a wide bandgap 2D material, and apply it to quantum emitters in hexagonal boron nitride (hBN). Our results will aid in identifying the atomic structures of quantum emitters in hBN, as well as practical applications since $\rm E_t$ determines defect charge states and plays a key role in photodynamics.
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Submitted 30 June, 2019;
originally announced July 2019.
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Room temperature single photon emission from oxidized tungsten disulphide multilayers
Authors:
Toan Trong Tran,
Sumin Choi,
John A. Scott,
Zai-quan Xu,
Changxi Zheng,
Gediminas Seniutinas,
Avi Bendavid,
Michael S. Fuhrer,
Milos Toth,
Igor Aharonovich
Abstract:
Two dimensional systems offer a unique platform to study light matter interaction at the nanoscale. In this work we report on robust quantum emitters fabricated by thermal oxidation of tungsten disulphide multilayers. The emitters show robust, optically stable, linearly polarized luminescence at room temperature, can be modeled using a three level system, and exhibit moderate bunching. Overall, ou…
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Two dimensional systems offer a unique platform to study light matter interaction at the nanoscale. In this work we report on robust quantum emitters fabricated by thermal oxidation of tungsten disulphide multilayers. The emitters show robust, optically stable, linearly polarized luminescence at room temperature, can be modeled using a three level system, and exhibit moderate bunching. Overall, our results provide important insights into understanding of defect formation and quantum emitter activation in 2D materials.
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Submitted 30 December, 2016;
originally announced January 2017.
