Showing 1–18 of 18 results for author: Qiu, S

Cluster Sliding Ferroelectricity in Trilayer Quasi-Hexagonal C60

Authors: Xuefei Wang, Yanhan Ren, Shi Qiu, Fan Zhang, Xueao Li, Junfeng Gao, Weiwei Gao, Jijun Zhao

Abstract: Electric polarization typically originates from non-centrosymmetric charge distributions. Since chemical bonds between atoms of the same elements favor centrosymmetric crystal structures and symmetrically distributed electron charges, elemental ferroelectrics are extremely rare. In comparison to atoms, elemental clusters are less symmetric and typically have various preferred orientations in cryst… ▽ More Electric polarization typically originates from non-centrosymmetric charge distributions. Since chemical bonds between atoms of the same elements favor centrosymmetric crystal structures and symmetrically distributed electron charges, elemental ferroelectrics are extremely rare. In comparison to atoms, elemental clusters are less symmetric and typically have various preferred orientations in crystals. Consequently, the assembly of clusters with different orientations tends to break the inversion symmetry. Based on this concept, we show that sliding ferroelectricity naturally emerges in trilayer quasi-hexagonal phase (qHP) C60, a cluster-assembled carbon allotrope recently synthesized. Trilayer qHP C60's have several stable polar structures, which are distinguishable in second-harmonic generation (SHG) responses. Compared to previously found elemental ferroelectrics, trilayer qHP C60's have sizable band gaps and some of them have both switchable out-of-plane and in-plane polarizations. Remarkably, the out-of-plane and in-plane polarizations are decoupled, enabling an easy-to-implement construction of Van der Waals homostructures with ferroelectrically switchable chirality. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Comments: 5 figures

Uniaxial plasmon polaritons $\textit{via}$ charge transfer at the graphene/CrSBr interface

Authors: Daniel J. Rizzo, Eric Seewald, Fangzhou Zhao, Jordan Cox, Kaichen Xie, Rocco A. Vitalone, Francesco L. Ruta, Daniel G. Chica, Yinming Shao, Sara Shabani, Evan J. Telford, Matthew C. Strasbourg, Thomas P. Darlington, Suheng Xu, Siyuan Qiu, Aravind Devarakonda, Takashi Taniguchi, Kenji Watanabe, Xiaoyang Zhu, P. James Schuck, Cory R. Dean, Xavier Roy, Andrew J. Millis, Ting Cao, Angel Rubio , et al. (2 additional authors not shown)

Abstract: Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a pla… ▽ More Graphene is a privileged 2D platform for hosting confined light-matter excitations known as surface plasmon-polaritons (SPPs), as it possesses low intrinsic losses with a high degree of optical confinement. However, the inherently isotropic optical properties of graphene limit its ability to guide and focus SPPs, making it less suitable than anisotropic elliptical and hyperbolic materials as a platform for polaritonic lensing and canalization. Here, we present the graphene/CrSBr heterostructure as an engineered 2D interface that hosts highly anisotropic SPP propagation over a wide range of frequencies in the mid-infrared and terahertz. Using a combination of scanning tunneling microscopy (STM), scattering-type scanning near-field optical microscopy (s-SNOM), and first-principles calculations, we demonstrate mutual doping in excess of 10$^{13}$ cm$^{-2}$ holes/electrons between the interfacial layers of graphene/CrSBr heterostructures. SPPs in graphene activated by charge transfer interact with charge-induced anisotropic intra- and interband transitions in the interfacial doped CrSBr, leading to preferential SPP propagation along the quasi-1D chains that compose each CrSBr layer. This multifaceted proximity effect both creates SPPs and endows them with anisotropic transport and propagation lengths that differ by an order-of-magnitude between the two in-plane crystallographic axes of CrSBr. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Fully printed flexible perovskite solar modules with improved energy alignment by tin oxide surface modification

Authors: Lirong Dong, Shudi Qiu, Jose Garcia Cerrillo, Michael Wagner, Olga Kasian, Sarmad Feroze, Dongju Jang, Chaohui Li, Vincent M. Le Corre, Kaicheng Zhang, Heiko Peisert, Felix U Kosasih, Charline Arrive, Tian Du, Fu Yang, Christoph J. Brabec, Hans-Joachim Egelhaaf

Abstract: Fully printed flexible perovskite solar cells (f-PSCs) show great potential for the commercialization of perovskite photovoltaics owing to their compatibility with high-throughput roll-to-roll (R2R) production. However, the challenge remains in the deficiency in controlling interfacial recombination losses of the functional layer, causing remarkable loss of power conversion efficiency (PCE) in ind… ▽ More Fully printed flexible perovskite solar cells (f-PSCs) show great potential for the commercialization of perovskite photovoltaics owing to their compatibility with high-throughput roll-to-roll (R2R) production. However, the challenge remains in the deficiency in controlling interfacial recombination losses of the functional layer, causing remarkable loss of power conversion efficiency (PCE) in industrial production. Here, a fullerene-substituted alkylphosphonic acid dipole layer is introduced between the R2R-printed tin oxide electron transport layer and the perovskite active layer to reduce the energetic barrier and to suppress surface recombination at the buried interface. The resulting f-PSCs exhibit a PCE of 17.0% with negligible hysteresis, retain 95% of their initial PCE over 3000 bending cycles and achieve a T95 lifetime of 1200 h under 1 sun and 65 degreeC in nitrogen atmosphere. Moreover, the fully printed flexible perovskite solar mini-modules (f-PSMs) with a 20.25 cm2 aperture area achieve a PCE of 11.6%. The encapsulated f-PSMs retain 90% of their initial PCE after 500 h damp-heat testing at 65 degreeC and 85% relative humidity (ISOS-D3). This work marks an important progress toward the realization of efficient and stable flexible perovskite photovoltaics for commercialization. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Simulation of perovskite thin layer crystallization with varying evaporation rates

Authors: M. Majewski, S. Qiu, O. Ronsin, L. Lüer, V. M. Le Corre, T. Du, C. J. Brabec, H. -J. Egelhaaf, J. Harting

Abstract: Perovskite solar cells (PSC) are promising potential competitors to established photovoltaic technologies due to their superior efficiency and low-cost solution processability. However, the limited understanding of the crystallization behaviour hinders the technological transition from lab-scale cells to modules. In this work, we perform Phase Field (PF) simulations of the doctor-bladed film forma… ▽ More Perovskite solar cells (PSC) are promising potential competitors to established photovoltaic technologies due to their superior efficiency and low-cost solution processability. However, the limited understanding of the crystallization behaviour hinders the technological transition from lab-scale cells to modules. In this work, we perform Phase Field (PF) simulations of the doctor-bladed film formation to obtain mechanistic and morphological information that is experimentally challenging to access. PF simulations are validated extensively using in- and ex-situ experiments for different solvent evaporation rates. The well-known transition from a film with many pinholes, for a low evaporation rate, to a smooth film, for high evaporation rates, is recovered in simulation and experiment. From the simulation, the transition can be assigned to the change in the ratio of evaporation to crystallization rate because of two distinct mechanisms. Firstly, for larger evaporation rates, nuclei appear at higher concentrations, which favors nucleation as compared to growth. Secondly, the growth of the crystals is confined in a thinner film, which limits their vertical size. Both effects are expected to be valid independent of the specific chemistry of the chosen experimental system, as long as the evaporation time of the solvent is comparable to the crystallization time. △ Less

Submitted 15 April, 2024; originally announced April 2024.

Comments: paper 10 pages, SI 26 pages

Precise Control of Process Parameters for >23% Efficiency Perovskite Solar Cells in Ambient Air Using an Automated Device Acceleration Platform

Authors: Jiyun Zhang, Anastasia Barabash, Tian Du, Jianchang Wu, Vincent M. Le Corre, Yicheng Zhao, Shudi Qiu, Kaicheng Zhang, Frederik Schmitt, Zijian Peng, Jingjing Tian, Chaohui Li, Chao Liu, Thomas Heumueller, Larry Lüer, Jens A. Hauch, Christoph J. Brabec

Abstract: Achieving high-performance perovskite photovoltaics, especially in ambient air relies heavily on optimizing process parameters. However, traditional manual methods often struggle to effectively control the key variables. This inherent challenge requires a paradigm shift toward automated platforms capable of precise and reproducible experiments. Herein, we use a fully automated device acceleration… ▽ More Achieving high-performance perovskite photovoltaics, especially in ambient air relies heavily on optimizing process parameters. However, traditional manual methods often struggle to effectively control the key variables. This inherent challenge requires a paradigm shift toward automated platforms capable of precise and reproducible experiments. Herein, we use a fully automated device acceleration platform (DAP) to optimize the process parameters for preparing full perovskite devices using a two-step method in ambient air. Eight process parameters that have the potential to significantly influence device performance are systematically optimized. Specifically, we delve into the impact of the dispense speed of organic ammonium halide, a parameter that is difficult to control manually, on both perovskite film and device performance. Through the targeted design of experiments, we reveal that the dispense speed significantly affects device performance primarily by adjusting the residual PbI2 content in the films. We find that moderate dispense speeds, e.g., 50 μl/s, contribute to top-performance devices. Conversely, too fast or too slow speeds result in devices with relatively poorer performance and lower reproducibility. The optimized parameter set enables us to establish a Standard Operation Procedure (SOP) for additive-free perovskite processing under ambient conditions, which yield devices with efficiencies surpassing 23%, satisfactory reproducibility, and state-of-the-art photo-thermal stability. This research underscores the importance of understanding the causality of process parameters in enhancing perovskite photovoltaic performance. Furthermore, our study highlights the pivotal role of automated platforms in discovering innovative workflows and accelerating the development of high-performing perovskite photovoltaic technologies. △ Less

Submitted 29 March, 2024; originally announced April 2024.

Stability and superconductivity of freestanding two-dimensional transition metal boridene: M4/3B2

Authors: Xiaoran Shi, Junfeng Gao, Shi Qiu, Yuan Chang, Luneng Zhao, Zhen-Guo Fu, Jijun Zhao, Ping Zhang

Abstract: The small atomic mass of boron indicates strong electron-phonon coupling, so it may have a brilliant performance in superconductivity. Recently, a new 2D boride sheet with ordered metal vacancies and surface terminals (Mo4/3B2-x) was realized in experiments (Science 2021, 373, 801). Here, the 2D monolayer freestanding Mo4/3B2is evidenced to be thermodynamically stable. Through electronic structure… ▽ More The small atomic mass of boron indicates strong electron-phonon coupling, so it may have a brilliant performance in superconductivity. Recently, a new 2D boride sheet with ordered metal vacancies and surface terminals (Mo4/3B2-x) was realized in experiments (Science 2021, 373, 801). Here, the 2D monolayer freestanding Mo4/3B2is evidenced to be thermodynamically stable. Through electronic structure, phonon spectrum and electron-phonon coupling, monolayer Mo4/3B2 is found to be an intrinsic phonon-mediated superconductor. The superconducting transition temperature (Tc) is determined to be 4.06 K by the McMillian-Allen-Dynes formula. Remarkably, the Tc of monolayer Mo4/3B2 can be increased to 6.78 K with an appropriate biaxial tensile strain (+5%). Moreover, we predict that other transition metal replacing Mo atoms is also stable and retaining the superconductivity. Such as monolayer W4/3B2 is also a superconductor with the Tc of 2.37 K. Our research results enrich the database of 2D monolayer superconductors and boron-related formed materials science. △ Less

Submitted 13 November, 2023; originally announced November 2023.

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Authors: Jie Zhou, Moheb Sheikhi, Ashok Dheenan, Haris Abbasi, Jiarui Gong, Yang Liu, Carolina Adamo, Patrick Marshall, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Vincent Gambin, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka… ▽ More In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Comments: 14 pages, 5 figures

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Authors: Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo, Patrick Marshall, Moheb Sheikhi, Tsung-Han Tsai, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Gambin Vincent, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr… ▽ More Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V. △ Less

Submitted 14 August, 2023; v1 submitted 12 August, 2023; originally announced August 2023.

Comments: 12 pages, 4 figures

Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting

Authors: Jiarui Gong, Donghyeok Kim, Hokyung Jang, Fikadu Alema, Qingxiao Wang, Tien Khee Ng, Shuoyang Qiu, Jie Zhou, Xin Su, Qinchen Lin, Ranveer Singh, Haris Abbasi, Kelson Chabak, Gregg Jessen, Clincy Cheung, Vincent Gambin, Shubhra S. Pasayat, Andrei Osinsky, Boon, S. Ooi, Chirag Gupta, Zhenqiang Ma

Abstract: The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se… ▽ More The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors. △ Less

Submitted 30 May, 2023; originally announced May 2023.

Comments: 32 pages, 10 figures. The preliminary data were presented as a poster in the 5th US Gallium Oxide Workshop, Washington, DC. August 07-10, 2022

In-plane anisotropy in biaxial ReS2 crystals probed by nano-optical imaging of waveguide modes

Authors: Fabian Mooshammer, Sanghoon Chae, Shuai Zhang, Yinming Shao, Siyuan Qiu, Anjaly Rajendran, Aaron J. Sternbach, Daniel J. Rizzo, Xiaoyang Zhu, P. James Schuck, James C. Hone, D. N. Basov

Abstract: Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rheni… ▽ More Near-field imaging has emerged as a reliable probe of the dielectric function of van der Waals crystals. In principle, analyzing the propagation patterns of subwavelength waveguide modes (WMs) allows for extraction of the full dielectric tensor. Yet previous studies have mostly been restricted to high-symmetry materials or narrowband probing. Here, we resolve in-plane anisotropic WMs in thin rhenium disulfide (ReS2) crystals across a wide range of near-infrared frequencies. By tracing the evolution of these modes as a function of crystallographic direction, polarization of the electric field and sample thickness, we have determined the anisotropic dielectric tensor including the elusive out-of-plane response. The excitonic absorption at ~1.5 eV manifests itself as a clear backbending feature in the WM dispersion and a reduction of the quality factors as fully supported by numerical calculations. Our results extend the sensitivity of near-field microscopy towards biaxial anisotropy and provide key insights into the optoelectronic properties of ReS2. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics (copyright ©American Chemical Society) after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.1c01841

Journal ref: ACS Photonics 9, 443-451 (2022)

Large-Scale Integrated Flexible Tactile Sensor Array for Sensitive Smart Robotic Touch

Authors: Zhenxuan Zhao, Jianshi Tang, Jian Yuan, Yijun Li, Yuan Dai, Jian Yao, Qingtian Zhang, Sanchuan Ding, Tingyu Li, Ruirui Zhang, Yu Zheng, Zhengyou Zhang, Song Qiu, Qingwen Li, Bin Gao, Ning Deng, He Qian, Fei Xing, Zheng You, Huaqiang Wu

Abstract: In the long pursuit of smart robotics, it has been envisioned to empower robots with human-like senses, especially vision and touch. While tremendous progress has been made in image sensors and computer vision over the past decades, the tactile sense abilities are lagging behind due to the lack of large-scale flexible tactile sensor array with high sensitivity, high spatial resolution, and fast re… ▽ More In the long pursuit of smart robotics, it has been envisioned to empower robots with human-like senses, especially vision and touch. While tremendous progress has been made in image sensors and computer vision over the past decades, the tactile sense abilities are lagging behind due to the lack of large-scale flexible tactile sensor array with high sensitivity, high spatial resolution, and fast response. In this work, we have demonstrated a 64x64 flexible tactile sensor array with a record-high spatial resolution of 0.9 mm (equivalently 28.2 pixels per inch), by integrating a high-performance piezoresistive film (PRF) with a large-area active matrix of carbon nanotube thin-film transistors. PRF with self-formed microstructures exhibited high pressure-sensitivity of ~385 kPa-1 for MWCNTs concentration of 6%, while the 14% one exhibited fast response time of ~3 ms, good linearity, broad detection range beyond 1400 kPa, and excellent cyclability over 3000 cycles. Using this fully integrated tactile sensor array, the footprint maps of an artificial honeybee were clearly identified. Furthermore, we hardware-implemented a smart tactile system by integrating the PRF-based sensor array with a memristor-based computing-in-memory chip to record and recognize handwritten digits and Chinese calligraphy, achieving high classification accuracies of 98.8% and 97.3% in hardware, respectively. The integration of sensor networks with deep learning hardware may enable edge or near-sensor computing with significantly reduced power consumption and latency. Our work could pave the road to building large-scale intelligent sensor networks for next-generation smart robotics. △ Less

Submitted 3 November, 2022; v1 submitted 23 August, 2022; originally announced August 2022.

Comments: Correction in Methods: The weight ratio of TPU:DMF was set to be 1:5

Journal ref: ACS Nano 2022, 16, 16784

Five-fold Symmetry in Au-Si Metallic Glass

Authors: Chang-Chun He, Shao-Gang Xu, Shao-Bin Qiu, Chao He, Yu-Jun Zhao, Xiao-Bao Yang, Hu Xu

Abstract: The first metallic glass of Au-Si alloy has been discovered for over half a century, but its atomic structure is still puzzling. Herein, Au 8 Si dodecahedrons with local five-fold symmetry are revealed as building blocks in Au-Si metallic glass, and the interconnection modes of Au 8 Si dodecahedrons determine the medium-range order. With dimensionality reduction, the surface ordering is attributed… ▽ More The first metallic glass of Au-Si alloy has been discovered for over half a century, but its atomic structure is still puzzling. Herein, Au 8 Si dodecahedrons with local five-fold symmetry are revealed as building blocks in Au-Si metallic glass, and the interconnection modes of Au 8 Si dodecahedrons determine the medium-range order. With dimensionality reduction, the surface ordering is attributed to the motif transformation of Au 8 Si dodecahedrons into planar Au 5 Si pyramids with five-fold symmetry, and thus the self-assembly of Au 5 Si pyramids leads to the formation of the ordered Au 2 Si monolayer with the lowest energy. Furthermore, the structural similarity analysis is performed to unveil the physical origin of structural characteristics in different dimensions. The amorphism of Au-Si is due to the smooth energy landscape around the global minimum, while the ordered surface structure occurs due to the steep energy landscape. △ Less

Submitted 14 May, 2022; originally announced May 2022.

A Ta-TaS2 monolithic catalyst with robust and metallic interface for superior hydrogen evolution

Authors: Qiangmin Yu, Zhiyuan Zhang, Siyao Qiu, Yuting Luo, Zhibo Liu, Fengning Yang, Heming Liu, Shiyu Ge, Xiaolong Zou, Baofu Ding, Wencai Ren, Hui-Ming Cheng, Chenghua Sun, Bilu Liu

Abstract: The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implem… ▽ More The use of highly active and robust catalysts is crucial for producing green hydrogen by water electrolysis as we strive to achieve global carbon neutrality. Noble metals like platinum are currently used in industry for the hydrogen evolution reaction (HER), but suffer from scarcity, high price and unsatisfied performance and stability at large current density, restricting their large scale implementations. Here we report the synthesis of a new type of monolithic catalyst (MC) consisting of a metal disulfide (e.g., TaS2) catalyst vertically bonded to a conductive substrate of the same metal by strong covalent bonds. These features give the MC a mechanically robust and electrically near zero resistance interface, leading to an outstanding HER performance including rapid charge transfer and excellent durability, together with a low overpotential of 398 mV to achieve a current density of 2,000 mA cm-2 as required by industry. The Ta TaS2 MC has a negligible performance decay after 200 h operation at large current densities. In light of its unique interface and the various choice of metal elements giving the same structure, such monolithic materials may have broad uses besides catalysis. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: 16 pages, 5 figures

Determining ground states of alloy by a symmetry-based classification

Authors: Yu-Jie Cen, Chang-chun He, Shao-Bin Qiu, Yu-Jun Zhao, Xiao-Bao Yang

Abstract: Reducing the number of candidate structures is crucial to improve the efficiency of global optimization. Herein, we demonstrate that the generalized Hamiltonian can be described by the atom classification model (ACM) based on symmetry, generating competent candidates for the first-principles calculations to determine ground states of alloy directly. The candidates can be obtained in advance throug… ▽ More Reducing the number of candidate structures is crucial to improve the efficiency of global optimization. Herein, we demonstrate that the generalized Hamiltonian can be described by the atom classification model (ACM) based on symmetry, generating competent candidates for the first-principles calculations to determine ground states of alloy directly. The candidates can be obtained in advance through solving the convex hull step by step, because the correlation functions of ACM can be divided into various subspace according to the defined index $l$. As an important inference, this index can be converted to the number of Wyckoff positions, revealing the dominant effect of geometry symmetry on structural stability. Taking Ni-Pt, Ag-Pd, Os-Ru, Ir-Ru and Mo-Ru as examples, we not only identify the stable structures in previous theoretical and experimental results, but also predict a dozen of configurations with lower formation energies, such as Ag$_{0.5}$Pd$_{0.5}$ ($Fd$-$3m$), Os$_{0.5}$Ru$_{0.5}$ ($Pnma$), Ir$_{1/3}$Ru$_{2/3}$ ($P6_{3}/mmc$), and Mo$_{0.25}$Ru$_{0.75}$ ($Cmcm$). △ Less

Submitted 21 January, 2022; originally announced January 2022.

Graphene nanopipette enabled liquid delivery at zeptoliter precision

Authors: Shi Qiu, Yu Chen, Gediminas Gervinskas, Ross K. W. Marceau, Changxi Zheng, Gang Sha, Jing Fu

Abstract: Accurate extraction of liquid is the first step towards low-volume liquid delivery and nanocharacterization, which plays a significant role in biomedical research. In this study, a tip-shaped graphene nanopipette (GNP) is proposed by encapsulating the biomolecule solution on the prefabricated metal tip with graphene. The volume of the encapsulated liquid is highly controllable at zeptoliter precis… ▽ More Accurate extraction of liquid is the first step towards low-volume liquid delivery and nanocharacterization, which plays a significant role in biomedical research. In this study, a tip-shaped graphene nanopipette (GNP) is proposed by encapsulating the biomolecule solution on the prefabricated metal tip with graphene. The volume of the encapsulated liquid is highly controllable at zeptoliter precision by tuning the encapsulating speed and the number of graphene encapsulation rounds. Using protein (ferritin) solution as an example, it has been confirmed by finite element analysis and the controlled experiments that the GNP allows the delivery of ferritin solution at the zeptoliter-scale. Furthermore, GNP is demonstrated as a new type of tip-shaped liquid cell, which is suitable for multiple nanocharacterization techniques. In particular, due to the ultra-sharp tip shape, isotope (13C)-labelled glucose solution encapsulated in GNP has been characterized by atom probe tomography (APT) in the laser-pulsed mode. Analysis of the mass spectrum and the reconstructed three-dimensional chemical maps reveals the quantitative distribution and the compositions of individual glucose molecules. The GNP is expected to be introduced to deliver liquid in the range of zeptoliters to attoliters, and brings a new capability for characterization of biological specimens in their near-native state. △ Less

Submitted 19 August, 2020; originally announced August 2020.

Direct imaging of liquid-nanoparticle interface with atom probe tomography

Authors: Shi. Qiu, Changxi Zheng, Qi Zhou, Dashen Dong, Qianqian Shi, Vivek Garg, Shuo Zhang, Wenlong Cheng, Ross K. W. Marceau, Gang Sha, Jing Fu

Abstract: Understanding the structure and chemical composition at the liquid-nanoparticle (NP) interface is crucial for a wide range of physical, chemical and biological processes. In this study, direct imaging of the liquid-NP interface by atom probe tomography (APT) is reported for the first time, which reveals the distributions and the interactions of key atoms and molecules in this critical domain. The… ▽ More Understanding the structure and chemical composition at the liquid-nanoparticle (NP) interface is crucial for a wide range of physical, chemical and biological processes. In this study, direct imaging of the liquid-NP interface by atom probe tomography (APT) is reported for the first time, which reveals the distributions and the interactions of key atoms and molecules in this critical domain. The APT specimen is prepared by controlled graphene encapsulation of the solution containing nanoparticles on a metal tip, with an end radius in the range of 50 nm to allow field ionization and evaporation. Using Au nanoparticles (AuNPs) in suspension as an example, analysis of the mass spectrum and three-dimensional (3D) chemical maps from APT provides a detailed image of the water-gold interface with near-atomic resolution. At the water-gold interface, the formation of an electrical double layer (EDL) rich in water (H2O) molecules has been observed, which results from the charge from the binding between the trisodium-citrate layer and the AuNP. In the bulk water region, the density of reconstructed H2O has been shown to be consistent, reflecting a highly packed density of H2O molecules after graphene encapsulation. This study is the first demonstration of direct imaging of liquid-NP interface using APT with results providing an atom-by-atom 3D dissection of the liquid-NP interface. △ Less

Submitted 18 May, 2020; originally announced May 2020.

BaTh$_2$Fe$_4$As$_4$(N$_{0.7}$O$_{0.3}$)$_2$: An Iron-Based Superconductor Stabilized by Inter-Block-Layer Charge Transfer

Authors: Ye-Ting Shao, Zhi-Cheng Wang, Bai-Zhuo Li, Si-Qi Wu, Ji-Feng Wu, Zhi Ren, Su-Wen Qiu, Can Rao, Cao Wang, Guang-Han Cao

Abstract: Recently, An electron-doped 12442-type iron-based superconductor BaTh$_2$Fe$_4$As$_4$(N$_{0.7}$O$_{0.3}$)$_2$ has been successfully synthesized with high-temperature solid-state reactions on basis of a structural design. The inter-block-layer charge transfer between the constituent units of "BaFe$_2$As$_2$" and "ThFeAsN$_{0.7}$O$_{0.3}$" was found to be essential to stabilize the target compound.… ▽ More Recently, An electron-doped 12442-type iron-based superconductor BaTh$_2$Fe$_4$As$_4$(N$_{0.7}$O$_{0.3}$)$_2$ has been successfully synthesized with high-temperature solid-state reactions on basis of a structural design. The inter-block-layer charge transfer between the constituent units of "BaFe$_2$As$_2$" and "ThFeAsN$_{0.7}$O$_{0.3}$" was found to be essential to stabilize the target compound. Dominant electron-type conduction and bulk superconducting transition at ~22 K were demonstrated. △ Less

Submitted 12 August, 2019; originally announced August 2019.

Comments: 16 pages in total. 5 figures, 1 table (main article); 6 figures, 3 tables (Supporting Information)

Journal ref: Sci. China Mater. 62(9), 1357-1362 (2019)

Quantum limit in subnanometre-gap tip-enhanced nanoimaging of few-layer MoS2

Authors: Yingchao Zhang, Dmitri V. Voronine, Shangran Qiu, Alexander M. Sinyukov, Mary Hamilton, Alexei V. Sokolov, Zhenrong Zhang, Marlan O. Scully

Abstract: Two-dimensional (2D) materials beyond graphene such as transition metal dichalcogenides (TMDs) have unique mechanical, optical and electronic properties with promising applications in flexible devices, catalysis and sensing. Optical imaging of TMDs using photoluminescence and Raman spectroscopy can reveal the effects of structure, strain, doping, defects, edge states, grain boundaries and surface… ▽ More Two-dimensional (2D) materials beyond graphene such as transition metal dichalcogenides (TMDs) have unique mechanical, optical and electronic properties with promising applications in flexible devices, catalysis and sensing. Optical imaging of TMDs using photoluminescence and Raman spectroscopy can reveal the effects of structure, strain, doping, defects, edge states, grain boundaries and surface functionalization. However, Raman signals are inherently weak and so far have been limited in spatial resolution in TMDs to a few hundred nanometres which is much larger than the intrinsic scale of these effects. Here we overcome the diffraction limit by using resonant tip-enhanced Raman scattering (TERS) of few-layer MoS2, and obtain nanoscale optical images with ~ 20 nm spatial resolution. This becomes possible due to electric field enhancement in an optimized subnanometre-gap resonant tip-substrate configuration. We investigate the limits of signal enhancement by varying the tip-sample gap with sub-Angstrom precision and observe a quantum quenching behavior, as well as a Schottky-Ohmic transition, for subnanometre gaps, which enable surface mapping based on this new contrast mechanism. This quantum regime of plasmonic gap-mode enhancement with a few nanometre thick MoS2 junction may be used for designing new quantum optoelectronic devices and sensors. △ Less

Submitted 22 December, 2015; originally announced December 2015.