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Effects of model size in density-functional-theory study of alloys: A case study of CsPbBr$_2$Cl
Authors:
Fang Pan,
Lin Yang,
Zhuangde Jiang,
Wei Ren,
Zuo-Guang Ye,
Jingrui Li
Abstract:
The primary challenge of density-functional-theory exploration of alloy systems concerns the size of computational model. Small alloy models can hardly exhibit the chemical disorder properly, while large models induce difficulty in sampling the alignments within the massive material space. We study this problem with the γ phase of the mixed halide inorganic perovskite alloy CsPbBr$_2$Cl. The distr…
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The primary challenge of density-functional-theory exploration of alloy systems concerns the size of computational model. Small alloy models can hardly exhibit the chemical disorder properly, while large models induce difficulty in sampling the alignments within the massive material space. We study this problem with the γ phase of the mixed halide inorganic perovskite alloy CsPbBr$_2$Cl. The distribution of alloy formation energy becomes narrower when the size of the model system increases along $\sqrt{2}\times\sqrt{2}\times2$, $2\times2\times2$, and $2\sqrt{2}\times2\sqrt{2}\times2$ models. This is primarily because the distribution of Br distribution parameters, which plays a leading role in determining the formation energy range, is more narrow for larger models. As a result, larger entropy stability effect can be observed with larger models especially at high temperatures, for which the approximation using mixing entropy based on the ideal solution model becomes better.
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Submitted 25 June, 2024;
originally announced June 2024.
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Electrical-controllable antiferromagnet-based tunnel junction
Authors:
Lei Han,
Xuming Luo,
Yingqian Xu,
Hua Bai,
Wenxuan Zhu,
Yuxiang Zhu,
Guoqiang Yu,
Cheng Song,
Feng Pan
Abstract:
Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling b…
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Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.
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Submitted 1 April, 2024;
originally announced April 2024.
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Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector
Authors:
Lei Han,
Xizhi Fu,
Wenqing He,
Yuxiang Zhu,
Jiankun Dai,
Wenfeng Yang,
Wenxuan Zhu,
Hua Bai,
Chong Chen,
Caihua Wan,
Xiufeng Han,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafas…
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Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.
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Submitted 20 March, 2024;
originally announced March 2024.
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Spin dissymmetry in optical cavities
Authors:
Jefferson Dixon,
Zachary N. Mauri,
Christopher J. Ciccarino,
Priyanuj Bordoloi,
Feng Pan,
Felipe H. da Jornada,
Jennifer Dionne
Abstract:
We introduce the spin dissymmetry factor, a measure of the spin-selectivity in the optical transition rate of quantum particles. This spin dissymmetry factor is valid locally, including at material interfaces and within optical cavities. We design and numerically demonstrate an optical cavity with three-fold rotational symmetry that maximizes spin dissymmetry, thereby minimizing the spin dephasing…
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We introduce the spin dissymmetry factor, a measure of the spin-selectivity in the optical transition rate of quantum particles. This spin dissymmetry factor is valid locally, including at material interfaces and within optical cavities. We design and numerically demonstrate an optical cavity with three-fold rotational symmetry that maximizes spin dissymmetry, thereby minimizing the spin dephasing of a cavity-coupled quantum particle. Our approach emphasizes the difference between spin and chirality in the nearfield and reveals a classical parameter for designing more efficient quantum optical devices.
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Submitted 17 March, 2024;
originally announced March 2024.
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Crystal design of altermagnetism
Authors:
Zhiyuan Zhou,
Xingkai Cheng,
Mengli Hu,
Junwei Liu,
Feng Pan,
Cheng Song
Abstract:
Symmetry plays a fundamental role in condensed matter. The unique entanglement between magnetic sublattices and alternating crystal environment in altermagnets provides a unique opportunity for designing magnetic space symmetry. There have been extensive experimental efforts concentrated on tuning the Neel vector to reconstruct altermagnetic symmetry. However, it remains challenging to modulate th…
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Symmetry plays a fundamental role in condensed matter. The unique entanglement between magnetic sublattices and alternating crystal environment in altermagnets provides a unique opportunity for designing magnetic space symmetry. There have been extensive experimental efforts concentrated on tuning the Neel vector to reconstruct altermagnetic symmetry. However, it remains challenging to modulate the altermagnetic symmetry through the crystal aspect. Here, the crystal design of altermagnetism is successfully realized, by breaking glide mirrors and magnetic mirrors of the (0001) crystallographic plane in CrSb films via crystal distortion. We establish a locking relationship between altermagnetic symmetry and the emergent Dzyaloshinskii-Moriya (DM) vectors in different CrSb films, realizing unprecedentedly room-temperature spontaneous anomalous Hall effect in an altermagnetic metal. The concept of exchange-coupling torques is broadened to include both antiferromagnetic exchange-coupling torque and DM torque. Their relationship is designable, determining electrical manipulation modes, e.g., field-assisted switching for CrSb(1-100)/Pt and field-free switching for W/CrSb(11-20). Particularly, the unprecedentedly field-free 100-percent switching of Neel vectors is realized by making these two torques parallel or antiparallel, dependent on Neel vector orientation. Besides unravelling the rich mechanisms for electrical manipulation of altermagnetism rooted in broadened concept of exchange-coupling torques, we list other material candidates and propose that crystal design of altermagnetism would bring rich designability to magnonics, topology, etc.
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Submitted 12 March, 2024;
originally announced March 2024.
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Mixed-halide perovskite alloys $\text{CsPb}(\text{I}_{1-x}^{}\text{Br}_x^{})_3^{}$ and $\text{CsPb}(\text{Br}_{1-x}^{}\text{Cl}_x^{})_3^{}$: New insight of configuration entropy effect from first principles and phase diagrams
Authors:
Fang Pan,
Junni Zhai,
Jinyu Chen,
Lin Yang,
Hua Dong,
Fang Yuan,
Zhuangde Jiang,
Wei Ren,
Zuo-Guang Ye,
Guo-Xu Zhang,
Jingrui Li
Abstract:
Stability is one of the key issues in mixed-halide perovskite alloys which are promising in emergent optoelectronics. Previous density-functional-theory (DFT) and machine learning studies indicate that the formation-energy convex hulls of these materials are very shallow, and stable alloy compositions are rare. In this work, we revisit this problem using DFT with special focus on the effects of co…
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Stability is one of the key issues in mixed-halide perovskite alloys which are promising in emergent optoelectronics. Previous density-functional-theory (DFT) and machine learning studies indicate that the formation-energy convex hulls of these materials are very shallow, and stable alloy compositions are rare. In this work, we revisit this problem using DFT with special focus on the effects of configuration and vibration entropies. Allowed by the $20$-atomic models for the $\text{CsPb}(\text{I}_{1-x}^{}\text{Br}_x^{})_3^{}$ and $\text{CsPb}(\text{Br}_{1-x}^{}\text{Cl}_x^{})_3^{}$ series, the partition functions and therewith thermodynamic state functions are calculated by traversing all possible mixed-halide configurations. We can thus evaluate the temperature- and system-dependent configuration entropy, which largely corrects the conventional approach based on the ideal solution model. Finally, temperature-composition phase diagrams that include $α$, $β$, $γ$ and $δ$ phases of both alloys are constructed based on the free energy data, for which the contribution of phonon vibrations is included.
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Submitted 29 February, 2024;
originally announced February 2024.
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Ultrahigh Thermal Conductivity of Cubic Boron Arsenide with an Unexpectedly Strong Temperature Dependence
Authors:
Songrui Hou,
Fengjiao Pan,
Xinping Shi,
Zahra Ebrahim Nataj,
Fariborz Kargar,
Alexander A. Balandin,
David G. Cahill,
Chen Li,
Zhifeng Ren,
Richard B. Wilson
Abstract:
Materials with high thermal conductivity are needed to conduct heat away from hot spots in power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previous experimental studies of c-BAs report a room-temperature thermal conductivity between 1000 and 1300 watts per meter-kelvin. We synthesized high pur…
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Materials with high thermal conductivity are needed to conduct heat away from hot spots in power electronics and optoelectronic devices. Cubic boron arsenide (c-BAs) has a high thermal conductivity due to its special phonon dispersion relation. Previous experimental studies of c-BAs report a room-temperature thermal conductivity between 1000 and 1300 watts per meter-kelvin. We synthesized high purity c-BAs single crystals with room-temperature thermal conductivity of 1500 watts per meter-kelvin. We observed its thermal conductivity to be proportional to the inverse square of temperature between 300 and 600 kelvin, a stronger dependence than predicted by state-of-the-art theory.
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Submitted 31 January, 2024;
originally announced February 2024.
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Electrical 180o switching of Néel vector in spin-splitting antiferromagnet
Authors:
Lei Han,
Xizhi Fu,
Rui Peng,
Xingkai Cheng,
Jiankun Dai,
Liangyang Liu,
Yidian Li,
Yichi Zhang,
Wenxuan Zhu,
Hua Bai,
Yongjian Zhou,
Shixuan Liang,
Chong Chen,
Qian Wang,
Xianzhe Chen,
Luyi Yang,
Yang Zhang,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However…
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Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
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Submitted 31 January, 2024;
originally announced January 2024.
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Magnetic properties of van der Waals layered single crystals DyOBr and SmOCl
Authors:
Feihao Pan,
Daye Xu,
Songnan Sun,
Jiale Huang,
Chenglin Shang,
Bingxian Shi,
Xuejuan Gui,
Jianfei Qin,
Hongliang Wang,
Lijie Hao,
Jinchen Wang,
Juanjuan Liu,
Hongxia Zhang,
Peng Cheng
Abstract:
Two-dimensional van der Waals single crystals DyOBr and SmOCl have been grown by flux method and their anisotropic magnetic properties are reported. DyOBr orders antiferromagnetically at T$_{N}$=9.5 K with magnetic moments lying along $a$-axis, similar as DyOCl. Its magnetic susceptibility shows an anomaly at T$^{*}$=30 K possibly due to the crystal field effect. Furthermore a 1/3 magnetization pl…
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Two-dimensional van der Waals single crystals DyOBr and SmOCl have been grown by flux method and their anisotropic magnetic properties are reported. DyOBr orders antiferromagnetically at T$_{N}$=9.5 K with magnetic moments lying along $a$-axis, similar as DyOCl. Its magnetic susceptibility shows an anomaly at T$^{*}$=30 K possibly due to the crystal field effect. Furthermore a 1/3 magnetization plateau is clearly observed under H$\parallel$a and H$\parallel$[110], which might be a field-induced spin-flop phase or some exotic quantum magnetic state. On the other hand, isostructural SmOCl undergoes an antiferromagnetic transition at T$_{N}$=7.1 K and exhibits a contrasting Ising-like perpendicular $c$-axis magnetic anisotropy, which could be well explained by our crystal field calculations. Both DyOBr and SmOCl are insulators with band gap of $\sim$5 eV, our results suggest they are promising in building van der Waals heterostructures and applications in multifunctional devices.
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Submitted 7 July, 2024; v1 submitted 12 January, 2024;
originally announced January 2024.
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Millimeter-scale exfoliation of hBN with tunable flake thickness
Authors:
Amy S. McKeown-Green,
Helen J. Zeng,
Ashley P. Saunders,
Jiayi Li,
Jenny Hu,
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Jennifer A. Dionne,
Tony F. Heinz,
Stephen Wu,
Fan Zheng,
Fang Liu
Abstract:
As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-fi…
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As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Antiferromagnetic magnonic charge current generation via ultrafast optical excitation
Authors:
Lin Huang,
Liyang Liao,
Hongsong Qiu,
Xianzhe Chen,
Hua Bai,
Lei Han,
Yongjian Zhou,
Yichen Su,
Zhiyuan Zhou,
Feng Pan,
Biaobing Jin,
Cheng Song
Abstract:
Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we report the experimental observati…
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Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we report the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.
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Submitted 5 October, 2023;
originally announced October 2023.
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FeGe1-xSbx:a series of novel kagome metals with noncollinear antiferromagnetism
Authors:
Jiale Huang,
Chenglin Shang,
Jianfei Qin,
Feihao Pan,
Bingxian Shi,
Jinchen Wang,
Juanjuan Liu,
Daye Xu,
Hongxia Zhang,
Hongliang Wang,
Lijie Hao,
Peng Cheng
Abstract:
Kagome metals are important for exploring emergent phenomena due to the interplay between band topology and electron correlation.Motivated by the recent discovery of charge density wave in a kagome lattice antiferromagnetic FeGe,we investigate the impact of Sb doping on the structural,charge and magnetic order of FeGe.The charge density wave is rapidly suppressed by Sb doping(~1.5%) and the antife…
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Kagome metals are important for exploring emergent phenomena due to the interplay between band topology and electron correlation.Motivated by the recent discovery of charge density wave in a kagome lattice antiferromagnetic FeGe,we investigate the impact of Sb doping on the structural,charge and magnetic order of FeGe.The charge density wave is rapidly suppressed by Sb doping(~1.5%) and the antiferromagnetic ordering temperature gradually shifts to 280K for FeGe0.7Sb0.3.For FeGe1-xSbx with x>0.1,crystal structures with slightly distorted Fe kagome lattice are formed.Their magnetic anisotropy has significant change,temperature driven spin-reorientation and field-induced spin-flop transition are identified from magnetization measurement.Interestingly,neutron diffraction reveals noncollinear antiferromagnetic structures widely exist below TN for all sample with x>0.1.This noncollinear magnetic orders could possibly be unconventional and resulted from onsite repulsion and filling condition of kagome flat band,as predicted by a recent theoretical work.
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Submitted 3 October, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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qecGPT: decoding Quantum Error-correcting Codes with Generative Pre-trained Transformers
Authors:
Hanyan Cao,
Feng Pan,
Yijia Wang,
Pan Zhang
Abstract:
We propose a general framework for decoding quantum error-correcting codes with generative modeling. The model utilizes autoregressive neural networks, specifically Transformers, to learn the joint probability of logical operators and syndromes. This training is in an unsupervised way, without the need for labeled training data, and is thus referred to as pre-training. After the pre-training, the…
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We propose a general framework for decoding quantum error-correcting codes with generative modeling. The model utilizes autoregressive neural networks, specifically Transformers, to learn the joint probability of logical operators and syndromes. This training is in an unsupervised way, without the need for labeled training data, and is thus referred to as pre-training. After the pre-training, the model can efficiently compute the likelihood of logical operators for any given syndrome, using maximum likelihood decoding. It can directly generate the most-likely logical operators with computational complexity $\mathcal O(2k)$ in the number of logical qubits $k$, which is significantly better than the conventional maximum likelihood decoding algorithms that require $\mathcal O(4^k)$ computation. Based on the pre-trained model, we further propose refinement to achieve more accurately the likelihood of logical operators for a given syndrome by directly sampling the stabilizer operators. We perform numerical experiments on stabilizer codes with small code distances, using both depolarizing error models and error models with correlated noise. The results show that our approach provides significantly better decoding accuracy than the minimum weight perfect matching and belief-propagation-based algorithms. Our framework is general and can be applied to any error model and quantum codes with different topologies such as surface codes and quantum LDPC codes. Furthermore, it leverages the parallelization capabilities of GPUs, enabling simultaneous decoding of a large number of syndromes. Our approach sheds light on the efficient and accurate decoding of quantum error-correcting codes using generative artificial intelligence and modern computational power.
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Submitted 18 July, 2023;
originally announced July 2023.
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Idealizing Tauc Plot for Accurate Bandgap Determination of Semiconductor with UV-Vis: A Case Study for Cubic Boron Arsenide
Authors:
Hong Zhong,
Fengjiao Pan,
Shuai Yue,
Chengzhen Qin,
Viktor Hadjiev,
Fei Tian,
Xinfeng Liu,
Feng Lin,
Zhiming Wang,
Zhifeng Ren,
Jiming Bao
Abstract:
The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. I…
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The Tauc plot method is widely used to determine the bandgap of semiconductors via UV-visible optical spectroscopy due to its simplicity and perceived accuracy. However, the actual Tauc plot often exhibits significant baseline absorption below the expected bandgap, leading to discrepancies in the calculated bandgap depending on whether the linear fit is extrapolated to zero or non-zero baseline. In this study, we show that both extrapolation methods can produce significant errors by simulating Tauc plots with varying levels of baseline absorption. To address this issue, we propose a new method that involves idealizing the absorption spectrum by removing its baseline before constructing the Tauc plot. Experimental verification of this method using a gallium phosphide (GaP) wafer with intentionally introduced baseline absorptions shows promising results. Furthermore, we apply this new method to cubic boron arsenide (c-BAs) and resolve discrepancies in c-BAs bandgap values reported by different groups, obtaining a converging bandgap of 1.835 eV based on both previous and new transmission spectra. The method is applicable to both indirect and direct bandgap semiconductors, regardless of whether the absorption spectrum is measured via transmission or diffuse reflectance, will become essential to obtain accurate values of their bandgaps.
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Submitted 12 June, 2023;
originally announced July 2023.
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Tensor Network Message Passing
Authors:
Yijia Wang,
Yuwen Ebony Zhang,
Feng Pan,
Pan Zhang
Abstract:
When studying interacting systems, computing their statistical properties is a fundamental problem in various fields such as physics, applied mathematics, and machine learning. However, this task can be quite challenging due to the exponential growth of the state space as the system size increases. Many standard methods have significant weaknesses. For instance, message-passing algorithms can be i…
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When studying interacting systems, computing their statistical properties is a fundamental problem in various fields such as physics, applied mathematics, and machine learning. However, this task can be quite challenging due to the exponential growth of the state space as the system size increases. Many standard methods have significant weaknesses. For instance, message-passing algorithms can be inaccurate and even fail to converge due to short loops. At the same time, tensor network methods can have exponential computational complexity in large graphs due to long loops. This work proposes a new method called ``tensor network message passing.'' This approach allows us to compute local observables like marginal probabilities and correlations by combining the strengths of tensor networks in contracting small sub-graphs with many short loops and the strengths of message-passing methods in globally sparse graphs, thus addressing the crucial weaknesses of both approaches. Our algorithm is exact for systems that are globally tree-like and locally dense-connected when the dense local graphs have limited treewidth. We have conducted numerical experiments on synthetic and real-world graphs to compute magnetizations of Ising models and spin glasses, to demonstrate the superiority of our approach over standard belief propagation and the recently proposed loopy message-passing algorithm. In addition, we discuss the potential applications of our method in inference problems in networks, combinatorial optimization problems, and decoding problems in quantum error correction.
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Submitted 2 May, 2023;
originally announced May 2023.
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Solution-phase single-particle spectroscopy for probing multi-polaronic dynamics in quantum emitters at femtosecond resolution
Authors:
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Weiwei Sun,
Anudeep Mangu,
Cindy Shi,
Amy McKeown-Green,
Parivash Moradifar,
Moungi G. Bawendi,
William E. Moerner,
Jennifer A. Dionne,
Fang Liu,
Aaron M. Lindenberg
Abstract:
The development of many optical quantum technologies depends on the availability of solid-state single quantum emitters with near-perfect optical coherence. However, a standing issue that limits systematic improvement is the significant sample heterogeneity and lack of mechanistic understanding of microscopic energy flow at the single emitter level and ultrafast timescales. Here we develop solutio…
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The development of many optical quantum technologies depends on the availability of solid-state single quantum emitters with near-perfect optical coherence. However, a standing issue that limits systematic improvement is the significant sample heterogeneity and lack of mechanistic understanding of microscopic energy flow at the single emitter level and ultrafast timescales. Here we develop solution-phase single-particle pump-probe spectroscopy with photon correlation detection that captures sample-averaged dynamics in single molecules and/or defect states with unprecedented clarity at femtosecond resolution. We apply this technique to single quantum emitters in two-dimensional hexagonal boron nitride, which suffers from significant heterogeneity and low quantum efficiency. From millisecond to nanosecond timescales, the translation diffusion, metastable-state-related bunching shoulders, rotational dynamics, and antibunching features are disentangled by their distinct photon-correlation timescales, which collectively quantify the normalized two-photon emission quantum yield. Leveraging its femtosecond resolution, spectral selectivity and ultralow noise (two orders of magnitude improvement over solid-state methods), we visualize electron-phonon coupling in the time domain at the single defect level, and discover the acceleration of polaronic formation driven by multi-electron excitation. Corroborated with results from a theoretical polaron model, we show how this translates to sample-averaged photon fidelity characterization of cascaded emission efficiency and optical decoherence time. Our work provides a framework for ultrafast spectroscopy in single emitters, molecules, or defects prone to photoluminescence intermittency and heterogeneity, opening new avenues of extreme-scale characterization and synthetic improvements for quantum information applications.
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Submitted 3 April, 2023;
originally announced April 2023.
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Multiple magnetic transitions and complex magnetic structures in Fe$_2$SiSe$_4$ with the sawtooth lattice
Authors:
Feihao Pan,
Xunwu Hu,
Jiale Huang,
Bingxian Shi,
Jinchen Wang,
Juanjuan Liu,
Hongxia Zhang,
Daye Xu,
Hongliang Wang,
Lijie Hao,
Peng Cheng,
Dao-Xin Yao
Abstract:
The sawtooth lattice shares some structural similarities with the kagome lattice and may attract renewed research interest. Here, we report a comprehensive study on the physical properties of Fe$_2$SiSe$_4$, an unexplored member in the olivine chalcogenides with the sawtooth lattice of Fe. Our results show that Fe$_2$SiSe$_4$ is a magnetic semiconductor with band gap of 0.66~eV. It first undergoes…
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The sawtooth lattice shares some structural similarities with the kagome lattice and may attract renewed research interest. Here, we report a comprehensive study on the physical properties of Fe$_2$SiSe$_4$, an unexplored member in the olivine chalcogenides with the sawtooth lattice of Fe. Our results show that Fe$_2$SiSe$_4$ is a magnetic semiconductor with band gap of 0.66~eV. It first undergoes an antiferromagnetic transition at T$_{m1}$=110~K, then an ferrimagnetic-like one at T$_{m2}$=50~K and finally a magnetic transition at T$_{m3}$=25~K which is likely driven by the thermal populations of spin-orbit manifold on the Fe site. Neutron diffraction analysis reveals a non-collinear antiferromagnetic structure with propagation vector $\mathbf{q_1}$=(0,0,0) at T$_{m2}$<T<T$_{m1}$. Interestingly, below T$_{m2}$, an additional antiferromagnetic structure with $\mathbf{q_2}$=(0,0.5,0) appears and Fe$_2$SiSe$_4$ exhibits a complex double-$\mathbf{q}$ magnetic structure which has never been observed in sawtooth olivines. Density functional theory calculations suggest this complex noncollinear magnetic structure may originate from the competing antiferromagnetic interactions for both intra- and inter-chain in the sawtooth lattice. Furthermore, band structural calculations show that Fe$_2$SiSe$_4$ has quasi-flat band features near the valence and conduction bands. Based on the above results, we propose Fe$_2$SiSe$_4$ as a new material platform to condensed matter researches.
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Submitted 23 March, 2023;
originally announced March 2023.
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Structural disorder by octahedral tilting in inorganic halide perovskites: New insight with Bayesian optimization
Authors:
Jingrui Li,
Fang Pan,
Guo-Xu Zhang,
Zenghui Liu,
Hua Dong,
Dawei Wang,
Zhuangde Jiang,
Wei Ren,
Zuo-Guang Ye,
Milica Todorović,
Patrick Rinke
Abstract:
Structural disorder is common in metal-halide perovskites and important for understanding the functional properties of these materials. First-principles methods can address structure variation on the atomistic scale, but they are often limited by the lack of structure-sampling schemes required to characterize the disorder. In this work, structural disorder in the benchmark inorganic halide perovsk…
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Structural disorder is common in metal-halide perovskites and important for understanding the functional properties of these materials. First-principles methods can address structure variation on the atomistic scale, but they are often limited by the lack of structure-sampling schemes required to characterize the disorder. In this work, structural disorder in the benchmark inorganic halide perovskites CsPbI$_3^{}$ and CsPbBr$_3^{}$ is computationally studied in terms of the three octahedral-tilting angles. The consequent variation in energetics and properties are described by three-dimensional potential-energy surfaces (PESs) and property landscapes, delivered by Bayesian Optimization Structure Search method with integrated density-functional-theory (DFT) calculations. The rapid convergence of the PES with about 200 DFT data points in three-dimensional searches demonstrates the power of active learning and strategic sampling with Bayesian optimization. Further analysis indicates that disorder grows with increasing temperature, and reveals that the materials band gap at finite temperatures is a statistical mean over disordered structures.
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Submitted 15 March, 2023;
originally announced March 2023.
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Ordered creation and motion of skyrmions with surface acoustic wave
Authors:
Ruyi Chen,
Chong Chen,
Lei Han,
Peisen Liu,
Rongxuan Su,
Wenxuan Zhu,
Yongjian Zhou,
Feng Pan,
Cheng Song
Abstract:
Magnetic skyrmions with a well-defined spin texture have shown unprecedented potential for various spintronic applications owning to their topologically non-trivial and quasiparticle properties. To put skyrmions into practical technology, efficient manipulation, especially the inhibition of skyrmion Hall effect (SkHE) has been intensively pursued. In spite of the recent progress made on reducing S…
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Magnetic skyrmions with a well-defined spin texture have shown unprecedented potential for various spintronic applications owning to their topologically non-trivial and quasiparticle properties. To put skyrmions into practical technology, efficient manipulation, especially the inhibition of skyrmion Hall effect (SkHE) has been intensively pursued. In spite of the recent progress made on reducing SkHE in several substituted systems, such as ferrimagnets and synthetic antiferromagnets, the organized creation and current driven motion of skyrmions with negligible SkHE in ferromagnets remain challenging. Here, by embeding the [Co/Pd] multilayer into a surface acoustic wave (SAW) delay line, we experimentally realized the ordered generation of magnetic skyrmions. The resultant current-induced skyrmions movement with negligible SkHE was observed, which can be attributed to the energy redistribution of the system during the excitation of SAW. Our findings open up an unprecedentedly new perspective for manipulating topological solitons, and would advance the development of skyrmionics and spin acousto-electronics.
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Submitted 13 December, 2022;
originally announced December 2022.
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Topological Hall Effect Driven by Short-Range Magnetic Orders in EuZn$_2$As$_2$
Authors:
Enkui Yi,
Dong Feng Zheng,
Feihao Pan,
Hongxia Zhang,
Bin Wang,
Bowen Chen,
Detong Wu,
Huili Liang,
Zeng Xia Mei,
Hao Wu,
Shengyuan A. Yang,
Peng Cheng,
Meng Wang,
Bing Shen
Abstract:
Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-ty…
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Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-type antiferromagnetic (AF) order, the SR magnetic order is observed in a wide temperature region. The magnetization measurements and electron spin resonance (ESR) measurements reveal the ferromagnetic (FM) correlations for this SR magnetic order which results in an obvious anomalous Hall effect above the AF transition. Moreover the ESR results reveal that this FM SR order coexists with LR AF order exhibiting anisotropic magnetic correlations below the AF transition. The interactions of LR and SR magnetism evolving with temperature and field can host non-zero spin charility and berry curvature leading the additional topological Hall contribution even in a centrosymmetric simple AF system. Our results indicate that EuZn$_2$As$_2$ is a fertile platform to investigate exotic magnetic and electronic states.
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Submitted 24 January, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Anisotropic magnetic properties and tunable conductivity in two-dimensional layered NaCrX2 (X=Te,Se,S) single crystals
Authors:
Jiale Huang,
Bingxian Shi,
Feihao Pan,
Jinchen Wang,
Juanjuan,
Liu,
Daye Xu,
Hongxia Zhang,
Tianlong Xia,
Peng Cheng
Abstract:
Monolayer NaCrX2 (X=Te,Se,S) were theoretically proposed to be two-dimensional intrinsic ferromagnetic semiconductors while their physical properties have not been thoroughly investigated in bulk single crystals. We report the single-crystal growth, structural, magnetic and electronic transport properties of NaCr(Te1-xSex)2 (0 6 x 6 1) and NaCrS2. For NaCr(Te1-xSex)2, the strong perpendicular magn…
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Monolayer NaCrX2 (X=Te,Se,S) were theoretically proposed to be two-dimensional intrinsic ferromagnetic semiconductors while their physical properties have not been thoroughly investigated in bulk single crystals. We report the single-crystal growth, structural, magnetic and electronic transport properties of NaCr(Te1-xSex)2 (0 6 x 6 1) and NaCrS2. For NaCr(Te1-xSex)2, the strong perpendicular magnetic anisotropy of NaCrTe2 can be gradually tuned to be a nearly isotropic one by Se-doping. Meanwhile, a systematic change in the conductivity with increasing x is observed, displaying a doping-induced metal-insulator-like transition. Under magnetic field larger than 30 koe, both NaCrTe2 and NaCrSe2 can be polarized to a ferromagnetic state. While for NaCrS2, robust antiferromagnetism is observed up to 70 kOe and two field-induced metamagnetic transitions are identified along H||ab. These intriguing properties together with the potential to be exfoliated down to few-layer thickness make NaCrX2 (X=Te,Se,S) promising for exploring spintronic applications.
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Submitted 7 October, 2022;
originally announced October 2022.
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Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy
Authors:
Usama Choudhry,
Fengjiao Pan,
Taeyong Kim,
Ryan Gnabasik,
Geethal Amila Gamage,
Haoran Sun,
Alex Ackerman,
Zhifeng Ren,
Bolin Liao
Abstract:
Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to direct…
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Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photoexcited charge carriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 picoseconds, which can be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.
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Submitted 25 June, 2022;
originally announced June 2022.
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Antiferromagnetic structure and magnetic properties of Dy2O2Te: An isostructural analog of the rare-earth superconductors R2O2Bi
Authors:
Juanjuan Liu,
Jiale Huang,
Jieming Sheng,
Jinchen Wang,
Feihao Pan,
Hongxia Zhang,
Daye Xu,
Jianfei Qin,
Lijie Hao,
Yuanhua Xia,
Hao Li,
Xin Tong,
Liusuo Wu,
Peng Cheng,
Wei Bao
Abstract:
The rare-earth compounds R2O2Bi (R=Tb, Dy, Er, Lu, Y) are newly discovered superconductors in the vicinity of a rare-earth magnetic long-range order. In this work, we determine the magnetic order of the parent compound Dy2O2Te by neutron scattering as the A-type antiferromagnetic structure below the Néel temperature TN=9.7K. The large staggered magnetic moment 9.4(1) μB per Dy at T=3.5K lies in th…
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The rare-earth compounds R2O2Bi (R=Tb, Dy, Er, Lu, Y) are newly discovered superconductors in the vicinity of a rare-earth magnetic long-range order. In this work, we determine the magnetic order of the parent compound Dy2O2Te by neutron scattering as the A-type antiferromagnetic structure below the Néel temperature TN=9.7K. The large staggered magnetic moment 9.4(1) μB per Dy at T=3.5K lies in the basal ab plane. In a magnetic field, anomalous magnetic properties including the bifurcation between zero-field- and field-cooling magnetization, a butterfly-shaped magnetic hysteresis, and slow magnetic relaxation emerge, which are related to the field-induced metamagnetic transitions in Dy2O2Te. Our experimental findings could stimulate further research on the relation between antiferromagnetism and superconductivity in these rare-earth compounds.
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Submitted 19 April, 2022;
originally announced April 2022.
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Controllable anomalous Nernst effect in an antiperovskite antiferromagnet
Authors:
Yunfeng You,
Wenxuan Zhu,
Hua Bai,
Yongjian Zhou,
Lei Han,
Leilei Qiao,
Tongjin Chen,
Feng Pan,
Cheng Song
Abstract:
Anomalous Nernst effect (ANE), the generation of a transverse electric voltage by a longitudinal temperature gradient, has attracted increasing interests of researchers recently, due to its potential in the thermoelectric power conversion and close relevance to the Berry curvature of the band structure. Avoiding the stray field of ferromagnets, ANE in antiferromagnets (AFM) has the advantage of re…
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Anomalous Nernst effect (ANE), the generation of a transverse electric voltage by a longitudinal temperature gradient, has attracted increasing interests of researchers recently, due to its potential in the thermoelectric power conversion and close relevance to the Berry curvature of the band structure. Avoiding the stray field of ferromagnets, ANE in antiferromagnets (AFM) has the advantage of realizing highly efficient and densely integrated thermopiles. Here, we report the observation of ANE in an antiperovskite noncollinear AFM Mn3SnN experimentally, which is triggered by the enhanced Berry curvature from Weyl points located close to the Fermi level. Considering that antiperovskite Mn3SnN has rich magnetic phase transition, we modulate the noncollinear AFM configurations by the biaxial strain, which enables us to control its ANE. Our findings provide a potential class of materials to explore the Weyl physics of noncollinear AFM as well as realizing antiferromagnetic spin caloritronics that exhibits promising prospects for energy conversion and information processing.
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Submitted 14 January, 2022;
originally announced January 2022.
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DyOCl: a rare-earth based two-dimensional van der Waals material with strong magnetic anisotropy
Authors:
Congkuan Tian,
Feihao Pan,
Dehua Ye,
Jieming Sheng,
Jinchen Wang,
Juanjuan Liu,
Jiale Huang,
Hongxia Zhang,
Daye Xu,
Jianfei Qin,
Lijie Hao,
Yuanhua Xia,
Hao Li,
Xin Tong,
Liusuo Wu,
Jian-Hao Chen,
Shuang Jia,
Peng Cheng,
Jianhui Yang,
Youqu Zheng
Abstract:
Comparing with the widely known transitional metal based van der Waals (vdW) materials, rare-earth based ones are rarely explored in the research of intrinsic two-dimensional (2D) magnetism. In this work, we report the physical properties of DyOCl, a rare-earth based vdW magnetic insulator with direct band gap of $\sim 5.72~eV$. The magnetic order of bulk DyOCl is determined by neutron scattering…
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Comparing with the widely known transitional metal based van der Waals (vdW) materials, rare-earth based ones are rarely explored in the research of intrinsic two-dimensional (2D) magnetism. In this work, we report the physical properties of DyOCl, a rare-earth based vdW magnetic insulator with direct band gap of $\sim 5.72~eV$. The magnetic order of bulk DyOCl is determined by neutron scattering as the $A$-type antiferromagnetic structure below the Néel temperature $T_N=10~$K. The large magnetic moment near 10.1 $ μ_{B} $/Dy lies parallel to the $a$-axis with strong uniaxial magnetic anisotropy. At $2~K$, a moderate magnetic field ($\sim 2~T$) applied along the easy axis generates spin-flip transitions and polarizes DyOCl to a ferromagnetic state. Density functional theory calculations reveal an extremely large magnetic anisotropy energy ($-5850~μeV/Dy$) for DyOCl, indicating the great potentials to realize magnetism in 2D limit. Furthermore, the mechanical exfoliation of bulk DyOCl single crystals down to seven layers is demonstrated. Our findings suggest DyOCl is a promising material playground to investigate 2D $f$-electron magnetism and spintronic applications at the nanoscale.
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Submitted 23 December, 2021;
originally announced December 2021.
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Noble-Metal-Assisted Fast Interfacial Oxygen Migration with Topotactic Phase Transition in Perovskite Oxides
Authors:
Qian Wang,
Youdi Gu,
Wenxuan Zhu,
Lei Han,
Feng Pan,
Cheng Song
Abstract:
Transition-metal perovskite oxides constitute a series of functional material systems for electronics, catalysis and energy-conversion processes, in which oxygen migration and evolution play a key role. However, the stable metal-oxygen (M-O) bond forms large energy barrier inhibiting ion diffusion. Therefore, seeking efficient and facile approaches to accelerate oxygen kinetics has become a signif…
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Transition-metal perovskite oxides constitute a series of functional material systems for electronics, catalysis and energy-conversion processes, in which oxygen migration and evolution play a key role. However, the stable metal-oxygen (M-O) bond forms large energy barrier inhibiting ion diffusion. Therefore, seeking efficient and facile approaches to accelerate oxygen kinetics has become a significant issue. Here, the interaction (interfacial charge transfer and cooperative bonding) between noble metal (Pt, Ag) and perovskites oxide (SrCoO3-delta) is employed to weaken (M-O) bond and decrease the energy barrier of oxygen migration. Noble metal layers serving as oxygen pumps can continuously extract oxygen from oxide films to atmosphere. The temperature of topotactic phase transition from perovskite (SrCoO3) to brownmillerite (SrCoO2.5) is remarkably lowered from 200 K to room temperature. Furthermore, this approach can also be applied to SrFeO3 for similar topotactic phase reduction by moderate thermal activation. Our finding paves a promising and general pathway to achieve fast oxygen migration in perovskite oxides, with important application prospect in low-temperature electrodes and high-activity catalysis interface.
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Submitted 31 October, 2021;
originally announced November 2021.
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Cluster magnetic octupole induced out-of-plane spin polarization in antiperovskite antiferromagnet
Authors:
Yunfeng You,
Hua Bai,
Xiaoyu Feng,
Xiaolong Fan,
Lei Han,
Xiaofeng Zhou,
Yongjian Zhou,
Ruiqi Zhang,
Tongjin Chen,
Feng Pan,
Cheng Song
Abstract:
Out-of-plane spin polarization σ_z has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σ_z. However, the physical origin of σ_z in noncollinear AFM is still not clear, and the external magnetic field-f…
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Out-of-plane spin polarization σ_z has attracted increasing interests of researchers recently, due to its potential in high-density and low-power spintronic devices. Noncollinear antiferromagnet (AFM), which has unique 120° triangular spin configuration, has been discovered to possess σ_z. However, the physical origin of σ_z in noncollinear AFM is still not clear, and the external magnetic field-free switching of perpendicular magnetic layer using the corresponding σ_z has not been reported yet. Here, we use the cluster magnetic octupole in antiperovskite AFM Mn3SnN to demonstrate the generation of σ_z. σ_z is induced by the precession of carrier spins when currents flow through the cluster magnetic octupole, which also relies on the direction of the cluster magnetic octupole in conjunction with the applied current. With the aid of σ_z, current induced spin-orbit torque (SOT) switching of adjacent perpendicular ferromagnet is realized without external magnetic field. Our findings present a new perspective to the generation of out-of-plane spin polarizations via noncollinear AFM spin structure, and provide a potential path to realize ultrafast high-density applications.
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Submitted 31 October, 2021;
originally announced November 2021.
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Interface-enhanced ferromagnetism with long-distance effect in van der Waals semiconductor
Authors:
Wenxuan Zhu,
Cheng Song,
Lei Han,
Hua Bai,
Qian Wang,
Siqi Yin,
Lin Huang,
Tongjin Chen,
Feng Pan
Abstract:
Ferromagnetic semiconductors discovered in two-dimensional (2D) materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature (TC) of existed 2D ferromagnetic semiconductors is extremely low and the modulation effect of their magnetism is limited compared with their 2D metallic counterparts. The interfacial effect was found to effectively manipulate the thre…
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Ferromagnetic semiconductors discovered in two-dimensional (2D) materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature (TC) of existed 2D ferromagnetic semiconductors is extremely low and the modulation effect of their magnetism is limited compared with their 2D metallic counterparts. The interfacial effect was found to effectively manipulate the three-dimensional magnetism, providing a unique opportunity for tailoring the 2D magnetism. Here we demonstrate that the TC of 2D ferromagnetic semiconductor Cr2Ge2Te6 can be enhanced by 130% (from ~65 K to above 150 K) when adjacent to a tungsten layer. The interfacial W-Te bonding contributes to the TC enhancement with a strong perpendicular magnetic anisotropy (PMA), guaranteeing an efficient magnetization switching by the spin-orbit torque with a low current density at 150 K. Distinct from the rapid attenuation in conventional magnets, the interfacial effect exhibits a weak dependence on Cr2Ge2Te6 thickness and a long-distance effect (more than 10 nanometers) due to the weak interlayer coupling inherent to 2D magnets. Our work not only reveals a unique interfacial behavior in 2D materials, but also advances the process towards practical 2D spintronics.
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Submitted 31 October, 2021;
originally announced November 2021.
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Observation of spin splitting torque in a collinear antiferromagnet RuO2
Authors:
Hua Bai,
Lei Han,
Xiaoyu Feng,
Yongjian Zhou,
Qian Wang,
Wenxuan Zhu,
Xianzhe Chen,
Feng Pan,
Xiaolong Fan,
Cheng Song
Abstract:
Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted (R. González-Hernández et al. Phys. Rev. Lett. 126, 127701 (2021)), which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the…
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Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted (R. González-Hernández et al. Phys. Rev. Lett. 126, 127701 (2021)), which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the experimental evidence of SST in collinear antiferromagnet RuO2 films. The spin current direction is found to be correlated to the crystal orientation of RuO2 and the spin polarization direction is dependent on (parallel to) the Néel vector. These features are quite characteristic for the predicted SST. Our finding not only present a new member for the spin torques besides traditional STT and SOT, but also proposes a promising spin source RuO2 for spintronics.
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Submitted 24 April, 2022; v1 submitted 13 September, 2021;
originally announced September 2021.
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Self-healing mechanism of lithium in lithium metal batteries
Authors:
Junyu Jiao,
Genming Lai,
Liang Zhao,
Jiaze Lu,
Qidong Li,
Xianqi Xu,
Yao Jiang,
Yan-Bing He,
Chuying Ouyang,
Feng Pan,
Hong Li,
Jiaxin Zheng
Abstract:
Li metal is an ideal anode material for use in state-of-the-art secondary batteries. However, Li-dendrite growth is a safety concern and results in low coulombic efficiency, which significantly restricts the commercial application of Li secondary batteries. Unfortunately, the Li deposition (growth) mechanism is poorly understood on the atomic scale. Here, we used machine learning to construct a Li…
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Li metal is an ideal anode material for use in state-of-the-art secondary batteries. However, Li-dendrite growth is a safety concern and results in low coulombic efficiency, which significantly restricts the commercial application of Li secondary batteries. Unfortunately, the Li deposition (growth) mechanism is poorly understood on the atomic scale. Here, we used machine learning to construct a Li potential model with quantum-mechanical computational accuracy. Molecular dynamics simulations in this study with this model revealed two self-healing mechanisms in a large Li-metal system, viz. surface self-healing and bulk self-healing, and identified three Li-dendrite morphologies under different conditions, viz. "needle", "mushroom", and "hemisphere". Finally, we introduce the concepts of local current density and variance in local current density to supplement the critical current density when evaluating the probability of self-healing.
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Submitted 27 September, 2021; v1 submitted 21 June, 2021;
originally announced June 2021.
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Boltzmann machines as two-dimensional tensor networks
Authors:
Sujie Li,
Feng Pan,
Pengfei Zhou,
Pan Zhang
Abstract:
Restricted Boltzmann machines (RBM) and deep Boltzmann machines (DBM) are important models in machine learning, and recently found numerous applications in quantum many-body physics. We show that there are fundamental connections between them and tensor networks. In particular, we demonstrate that any RBM and DBM can be exactly represented as a two-dimensional tensor network. This representation g…
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Restricted Boltzmann machines (RBM) and deep Boltzmann machines (DBM) are important models in machine learning, and recently found numerous applications in quantum many-body physics. We show that there are fundamental connections between them and tensor networks. In particular, we demonstrate that any RBM and DBM can be exactly represented as a two-dimensional tensor network. This representation gives an understanding of the expressive power of RBM and DBM using entanglement structures of the tensor networks, also provides an efficient tensor network contraction algorithm for the computing partition function of RBM and DBM. Using numerical experiments, we demonstrate that the proposed algorithm is much more accurate than the state-of-the-art machine learning methods in estimating the partition function of restricted Boltzmann machines and deep Boltzmann machines, and have potential applications in training deep Boltzmann machines for general machine learning tasks.
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Submitted 10 May, 2021;
originally announced May 2021.
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Magnon-mediated interlayer coupling in an all-antiferromagnetic junction
Authors:
Yongjian Zhou,
Liyang Liao,
Xiaofeng Zhou,
Hua Bai,
Mingkun Zhao,
Caihua Wan,
Siqi Yin,
Lin Huang,
Tingwen Guo,
Lei Han,
Ruyi Chen,
Zhiyuan Zhou,
Xiufeng Han,
Feng Pan,
Cheng Song
Abstract:
The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and accelerates the development of information technology. However, the interlayer coupling mediated by another kind of quasi-particle, boson, is still lacking. Her…
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The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and accelerates the development of information technology. However, the interlayer coupling mediated by another kind of quasi-particle, boson, is still lacking. Here we demonstrate such a static interlayer coupling at room temperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the two antiferromagnetic Fe2O3 layers are functional materials and the antiferromagnetic Cr2O3 layer serves as a spacer. The Néel vectors in the top and bottom Fe2O3 are strongly orthogonally coupled, which is bridged by a typical bosonic excitation (magnon) in the Cr2O3 spacer. Such an orthogonally coupling exceeds the category of traditional collinear interlayer coupling via fermions in ground state, reflecting the fluctuating nature of the magnons, as supported by our magnon quantum well model. Besides the fundamental significance on the quasi-particle-mediated interaction, the strong coupling in an antiferromagnetic magnon junction makes it a realistic candidate for practical antiferromagnetic spintronics and magnonics with ultrahigh-density integration.
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Submitted 21 January, 2021;
originally announced January 2021.
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Facile preparation of CuCo$_2$S$_4$/Cu$_7$S$_4$ nanocomposites as high-performance cathode materials for rechargeable magnesium batteries
Authors:
Qin Zhang,
Yaobo Hu,
Jun Wang,
Yuanxiao Dai,
Fusheng Pan
Abstract:
Searching for efficient and high-performance cathode materials for rechargeable magnesium ion batteries (RMBs) is urgent for exploring sustainable energy technologies. However, the majority of cathode materials for RMBs usually suffer from low rate capacity and inferior cycle performance caused by structure collapse. Herein, ternary CuCo$_2$S$_4$/Cu$_7$S$_4$ composites with nano-sized are first sy…
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Searching for efficient and high-performance cathode materials for rechargeable magnesium ion batteries (RMBs) is urgent for exploring sustainable energy technologies. However, the majority of cathode materials for RMBs usually suffer from low rate capacity and inferior cycle performance caused by structure collapse. Herein, ternary CuCo$_2$S$_4$/Cu$_7$S$_4$ composites with nano-sized are first synthesized by a facile solvothermal method in this work and the magnesium ion storage behavior is discussed when applied in the cathode for RMBs. Electrochemical results demonstrate that the nanosphere-like CuCo$_2$S$_4$/Cu$_7$S$_4$ composites exhibit a high initial discharge capacity of 256 mAh/g at 10 mA/g and 123 mAh/g at 300 mA/g at room temperature. Furthermore, an outstanding long-term cyclic stability with a reversible capacity of 106 mA/g after 300 cycles and the coulombic efficiency of about 99% are achieved at 300 mA/g. Such remarkable electrochemical performance is owing to the nanosphere-like structure, ternary composition and pseudocapacitive storage behavior of CuCo$_2$S$_4$/Cu$_7$S$_4$. The results of this work indicate that the CuCo$_2$S$_4$/Cu$_7$S$_4$ nanocomposites synthesized by a facile and efficient method are promising cathodes for RMBs in energy storage/conversion application.
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Submitted 4 January, 2021;
originally announced January 2021.
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Adhesion as a trigger of droplet polarization in flowing emulsions
Authors:
Iaroslava Golovkova,
Lorraine Montel,
Franck Pan,
Elie Wandersman,
Alexis M. Prevost,
Thibault Bertrand,
Léa-Laetitia Pontani
Abstract:
Tissues are subjected to large external forces and undergo global deformations during morphogenesis. We use synthetic analogues of tissues to study the impact of cell-cell adhesion on the response of cohesive cellular assemblies under such stresses. In particular, we use biomimetic emulsions in which the droplets are functionalized in order to exhibit specific droplet-droplet adhesion. We flow the…
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Tissues are subjected to large external forces and undergo global deformations during morphogenesis. We use synthetic analogues of tissues to study the impact of cell-cell adhesion on the response of cohesive cellular assemblies under such stresses. In particular, we use biomimetic emulsions in which the droplets are functionalized in order to exhibit specific droplet-droplet adhesion. We flow these emulsions in microfluidic constrictions and study their response to this forced deformation via confocal microscopy. We find that the distributions of avalanche sizes are conserved between repulsive and adhesive droplets. However, adhesion locally impairs the rupture of droplet-droplet contacts, which in turn pulls on the rearranging droplets. As a result, adhesive droplets are a lot more deformed along the axis of elongation in the constriction. This finding could shed light on the origin of polarization processes during morphogenesis.
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Submitted 7 January, 2021;
originally announced January 2021.
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Current-induced magnetization switching in CoTb amorphous single layer
Authors:
R. Q. Zhang,
L. Y. Liao,
X. Z. Chen,
T. Xu,
L. Cai,
M. H. Guo,
Hao Bai,
L. Sun,
F. H. Xue,
J. Su,
X. Wang,
C. H. Wan,
Hua Bai,
Y. X. Song,
R. Y. Chen,
N. Chen,
W. J. Jiang,
X. F. Kou,
J. W. Cai,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant…
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We demonstrate spin-orbit torque (SOT) switching of amorphous CoTb single layer films with perpendicular magnetic anisotropy (PMA). The switching sustains even the film thickness is above 10 nm, where the critical switching current density keeps almost constant. Without the need of overcoming the strong interfacial Dzyaloshinskii-Moriya interaction caused by the heavy metal, a quite low assistant field of ~20 Oe is sufficient to realize the fully switching. The SOT effective field decreases and undergoes a sign change with the decrease of the Tb-concentration, implying that a combination of the spin Hall effect from both Co and Tb as well as an asymmetric spin current absorption accounts for the SOT switching mechanism. Our findings would advance the use of magnetic materials with bulk PMA for energy-efficient and thermal-stable non-volatile memories, and add a different dimension for understanding the ordering and asymmetry in amorphous thin films.
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Submitted 18 June, 2020;
originally announced June 2020.
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Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator
Authors:
Yongjian Zhou,
Chenyang Guo,
Caihua Wan,
Xianzhe Chen,
Xiaofeng Zhou,
Ruiqi Zhang,
Youdi Gu,
Ruyi Chen,
Huaqiang Wu,
Xiufeng Han,
Feng Pan,
Cheng Song
Abstract:
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12…
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Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density of 10^7 A cm^-2. The YIG sublattices with antiparallel and unequal magnetic moments are aligned parallel or antiparallel to the direction of current pulses, which is consistent to the Neel order switching in antiferromagnetic system. It is proposed that such a switching behavior may be triggered by the antidamping-torque acting on the two antiparallel sublattices of FiMI. Our finding not only broadens the magnetization switching by electrical means and promotes the understanding of magnetization switching, but also paves the way for all-electrically modulated microwave devices and spin caloritronics with low power consumption.
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Submitted 18 June, 2020;
originally announced June 2020.
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Origin of magnetovolume effect in a cobaltite
Authors:
Ping Miao,
Zhijian Tan,
Sanghyun Lee,
Yoshihisa Ishikawa,
Shuki Torii,
Masao Yonemura,
Akihiro Koda,
Kazuki Komatsu,
Shinichi Machida,
Asami Sano-Furukawa,
Takanori Hattori,
Xiaohuan Lin,
Kuo Li,
Takashi Mochiku,
Ryosuke Kikuchi,
Chizuru Kawashima,
Hiroki Takahashi,
Qingzhen Huang,
Shinichi Itoh,
Ryosuke Kadono,
Yingxia Wang,
Feng Pan,
Kunihiko Yamauchi,
Takashi Kamiyama
Abstract:
The layered perovskite PrBaCo2O5.5+x demonstrates a strong negative thermal expansion (NTE) which holds potential for being fabricated into composites with zero thermal expansion. The NTE was found to be intimately associated with the spontaneous magnetic ordering, known as magnetovolume effect (MVE). Here we report with compelling evidences that the continuous-like MVE in PrBaCo2O5.5+x is intrins…
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The layered perovskite PrBaCo2O5.5+x demonstrates a strong negative thermal expansion (NTE) which holds potential for being fabricated into composites with zero thermal expansion. The NTE was found to be intimately associated with the spontaneous magnetic ordering, known as magnetovolume effect (MVE). Here we report with compelling evidences that the continuous-like MVE in PrBaCo2O5.5+x is intrinsically of discontinuous character, originating from an magnetoelectric transition from an antiferromagnetic insulating large-volume (AFILV) phase to a ferromagnetic metallic small-volume (FMSV) phase. Furthermore, the magnetoelectric effect (ME) shows high sensitivity to multiple external stimuli such as temperature, carrier doping, hydrostatic pressure, magnetic field etc. In contrast to the well-known ME such as colossal magnetoresistance and multiferroic effect which involve symmetry breaking of crystal structure, the ME in the cobaltite is purely isostructural. Our discovery provides a new pathway to realizing the ME as well as the NTE, which may find applications in new techniques.
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Submitted 22 June, 2020; v1 submitted 17 March, 2020;
originally announced March 2020.
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Tunable magnetic properties in van der Waals crystals (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$
Authors:
Congkuan Tian,
Feihao Pan,
Sheng Xu,
Kun Ai,
Tian-long Xia,
Peng Cheng
Abstract:
We report the doping effects of cobalt on van der Waals (vdW) magnet Fe$_5$GeTe$_2$. A series of (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ (0$\leq$x$\leq$0.44) single crystals have been successfully grown, their structural, magnetic and transport properties are investigated. For x=0.20, The Curie temperature $T_C$ increases from 276~K to 337~K. Moreover, the magnetic easy-axis is reoriented to the $ab$-plane…
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We report the doping effects of cobalt on van der Waals (vdW) magnet Fe$_5$GeTe$_2$. A series of (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ (0$\leq$x$\leq$0.44) single crystals have been successfully grown, their structural, magnetic and transport properties are investigated. For x=0.20, The Curie temperature $T_C$ increases from 276~K to 337~K. Moreover, the magnetic easy-axis is reoriented to the $ab$-plane from the $c$-axis in undoped Fe$_5$GeTe$_2$ with largely enhanced magnetic anisotropy. These magnetic properties would make (Fe$_{0.8}$Co$_{0.2}$)$_5$GeTe$_2$ more effective in stabilizing magnetic order in the two-dimensional limit. A complex magnetic phase diagram is identified on the higher doping side. The x=0.44 crystal first orders ferromagnetically at $T_C$=363~K then undergoes an antiferromagnetic transition at $T_N$=335~K. Furthermore magnetic-field-induced spin-flop transitions are observed for the AFM ground state. Our work reveals (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ as promising candidates for developing new spin-related applications and proposes a method to engineer the magnetic properties of vdW magnet.
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Submitted 5 March, 2020;
originally announced March 2020.
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Flexo-diffusion effect: the strong influence on lithium diffusion induced by strain gradient
Authors:
Gao Xu,
Feng Hao,
Mouyi Weng,
Jiawang Hong,
Feng Pan,
Daining Fang
Abstract:
Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) sig…
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Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) significantly affects Li diffusion barrier, which is termed as the flexo-diffusion effect, through first-principles calculations. The Li diffusion barrier substantially decreases/increases under the positive/negative strain gradient, leading to the change of Li diffusion coefficient in several orders of magnitude at 300 K. Interestingly, the regulation effect of strain gradient is much more significant than that of uniform strain field, which can have a remarkable effect on the rate performance of batteries, with a considerable increase in the ionic conductivity and a slight change of the original material structure. Moreover, our ab initio molecular dynamics simulations (AIMD) show that the asymmetric distorted lattice structure provides a driving force for Li diffusion, resulting in oriented diffusion along the positive strain gradient direction. These findings could extend present LIBs technologies by introducing the novel strain gradient engineering.
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Submitted 13 February, 2020;
originally announced February 2020.
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Contracting Arbitrary Tensor Networks: General Approximate Algorithm and Applications in Graphical Models and Quantum Circuit Simulations
Authors:
Feng Pan,
Pengfei Zhou,
Sujie Li,
Pan Zhang
Abstract:
We present a general method for approximately contracting tensor networks with an arbitrary connectivity. This enables us to release the computational power of tensor networks to wide use in inference and learning problems defined on general graphs. We show applications of our algorithm in graphical models, specifically on estimating free energy of spin glasses defined on various of graphs, where…
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We present a general method for approximately contracting tensor networks with an arbitrary connectivity. This enables us to release the computational power of tensor networks to wide use in inference and learning problems defined on general graphs. We show applications of our algorithm in graphical models, specifically on estimating free energy of spin glasses defined on various of graphs, where our method largely outperforms existing algorithms including the mean-field methods and the recently proposed neural-network-based methods. We further apply our method to the simulation of random quantum circuits, and demonstrate that, with a trade off of negligible truncation errors, our method is able to simulate large quantum circuits that are out of reach of the state-of-the-art simulation methods.
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Submitted 8 August, 2020; v1 submitted 6 December, 2019;
originally announced December 2019.
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Non-equilibrium diffusion characteristics of a particle system and the correspondence to a social system
Authors:
Peng Wang,
Feng-Chun Pan,
Jie Huo,
Xu-Ming Wang
Abstract:
A Langevin equation is suggested to describe a system driven by correlated Gaussian white noise as well as with positive and negative damping demarcated by a critical velocity. The equation can be transformed into the Fokker-Planck equation by the Kramers-Moyal expansion. The solution exhibits some non-equilibrium phenomena. In the beginning the distribution curve of velocity/energy takes on a ran…
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A Langevin equation is suggested to describe a system driven by correlated Gaussian white noise as well as with positive and negative damping demarcated by a critical velocity. The equation can be transformed into the Fokker-Planck equation by the Kramers-Moyal expansion. The solution exhibits some non-equilibrium phenomena. In the beginning the distribution curve of velocity/energy takes on a random oscillation, and then a near-equilibrium distribution described by the Boltzmann distribution is gradually established. However, a spike appears on the distribution curve and breaks this stable distribution. The spike moves in the direction of velocity/energy decreasing and is nonlinearly enlarged so as to sustain. The final distribution is a sharp peak formed by a monotonically ascending segment and a monotonically descending one. The calculating results of the statistical quantities demonstrate that the process is a sub-diffusion, and the spike originates from the correlation between noise and space. Based on a basic hypothesis that the generalized displacement is regarded as the information carried by an opinion particle, and the velocity is taken as the sensitivity of an agent to an event, we map the observations in this system to a social system to understand the propagation of public opinion or message.
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Submitted 9 September, 2019;
originally announced September 2019.
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Solving Statistical Mechanics on Sparse Graphs with Feedback Set Variational Autoregressive Networks
Authors:
Feng Pan,
Pengfei Zhou,
Hai-Jun Zhou,
Pan Zhang
Abstract:
We propose a method for solving statistical mechanics problems defined on sparse graphs. It extracts a small Feedback Vertex Set (FVS) from the sparse graph, converting the sparse system to a much smaller system with many-body and dense interactions with an effective energy on every configuration of the FVS, then learns a variational distribution parameterized using neural networks to approximate…
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We propose a method for solving statistical mechanics problems defined on sparse graphs. It extracts a small Feedback Vertex Set (FVS) from the sparse graph, converting the sparse system to a much smaller system with many-body and dense interactions with an effective energy on every configuration of the FVS, then learns a variational distribution parameterized using neural networks to approximate the original Boltzmann distribution. The method is able to estimate free energy, compute observables, and generate unbiased samples via direct sampling without auto-correlation. Extensive experiments show that our approach is more accurate than existing approaches for sparse spin glasses. On random graphs and real-world networks, our approach significantly outperforms the standard methods for sparse systems such as the belief-propagation algorithm; on structured sparse systems such as two-dimensional lattices our approach is significantly faster and more accurate than recently proposed variational autoregressive networks using convolution neural networks.
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Submitted 22 May, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Electric field switching of the uniaxial magnetic anisotropy of an antiferromagnet
Authors:
Xianzhe Chen,
Xiaofeng Zhou,
Ran Cheng,
Cheng Song,
Jia Zhang,
Yichuan Wu,
You Ba,
Haobo Li,
Yiming Sun,
Yunfeng You,
Yonggang Zhao,
Feng Pan
Abstract:
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage for their ultrafast spin dynamics and vanishingly small stray field. However, the switching of magnetic anisotropy…
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Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage for their ultrafast spin dynamics and vanishingly small stray field. However, the switching of magnetic anisotropy of antiferromagnets via electric field remains elusive. Here we use ferroelastic strain from piezoelectric materials to switch the uniaxial magnetic anisotropy and the Néel order reversibly in antiferromagnetic Mn2Au films with an electric field of only a few kV/cm at room temperature. Owing to the uniaxial magnetic anisotropy, a ratchet-like switching behavior driven by the Néel spin-orbit torque is observed in the Mn2Au, which can be reversed by electric fields.
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Submitted 31 December, 2018;
originally announced December 2018.
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Oxygen-Octahedral-Tilting-Driven Topological Hall Effect in Ultrathin SrRuO3 Films
Authors:
Youdi Gu,
Yi-Wen Wei,
Kun Xu,
Hongrui Zhang,
Fei Wang,
Fan Li,
Muhammad Shahrukh Saleem,
Cui-Zu Chang,
Jirong Sun,
Cheng Song,
Ji Feng,
Xiaoyan Zhong,
Wei Liu,
Zhidong Zhang,
Jing Zhu,
Feng Pan
Abstract:
Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing non-trivial spin-textures. But the origin of THE in oxides has remained elusive. Here we report an observation of the THE in ultrathin (unit cells. u.c.) 4d ferromagn…
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Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing non-trivial spin-textures. But the origin of THE in oxides has remained elusive. Here we report an observation of the THE in ultrathin (unit cells. u.c.) 4d ferromagnetic SrRuO3 films grown on SrTiO3(001) substrates, which can be attributed to the chiral ordering of spin structure (i.e., skyrmion-like) in the single SrRuO3 layer without contacting 5d oxide SrIrO3 layer. It is revealed that the RuO6 octahedral tilting induced by local orthorhombic-to-tetragonal structural phase transition exists across the SrRuO3/SrTiO3 interface, which naturally breaks the inversion symmetry. Our theoretical calculations demonstrate that the Dzyaloshinskii-Moriya (DM) interaction arises owing to the broken inversion symmetry and strong spin-orbit interaction of 4d SrRuO3. This DM interaction can stabilize the Néel-type magnetic skyrmions, which in turn accounts for the observed THE in transport. The RuO6 octahedral tilting-induced DM interaction provides a pathway toward the electrical control of the topological spin textures and resultant THE, which is confirmed both experimentally and theoretically. Besides the fundamental significance, the understanding of THE in oxides and its electrical manipulation presented in this work could advance the low power cost topological electronic and spintronic applications.
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Submitted 22 November, 2018;
originally announced November 2018.
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High Reversibility of Lattice Oxygen Redox in Na-ion and Li-ion Batteries Quantified by Direct Bulk Probes of both Anionic and Cationic Redox Reactions
Authors:
Kehua Dai,
Jinpeng Wu,
Zengqing Zhuo,
Qinghao Li,
Shawn Sallis,
Jing Mao,
Guo Ai,
Chihang Sun,
Zaiyuan Li,
William E. Gent,
William C. Chueh,
Yi-de Chuang,
Rong Zeng,
Zhi-xun Shen,
Feng Pan,
Shishen Yan,
Louis F. J. Piper,
Zahid Hussain,
Gao Liu,
Wanli Yang
Abstract:
The reversibility and cyclability of anionic redox in battery electrodes hold the key to its practical employments. Here, through mapping of resonant inelastic X-ray scattering (mRIXS), we have independently quantified the evolving redox states of both cations and anions in Na2/3Mg1/3Mn2/3O2. The bulk-Mn redox emerges from initial discharge and is quantified by inverse-partial fluorescence yield (…
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The reversibility and cyclability of anionic redox in battery electrodes hold the key to its practical employments. Here, through mapping of resonant inelastic X-ray scattering (mRIXS), we have independently quantified the evolving redox states of both cations and anions in Na2/3Mg1/3Mn2/3O2. The bulk-Mn redox emerges from initial discharge and is quantified by inverse-partial fluorescence yield (iPFY) from Mn-L mRIXS. Bulk and surface Mn activities likely lead to the voltage fade. O-K super-partial fluorescence yield (sPFY) analysis of mRIXS shows 79% lattice oxygen-redox reversibility during initial cycle, with 87% capacity sustained after 100 cycles. In Li1.17Ni0.21Co0.08Mn0.54O2, lattice-oxygen redox is 76% initial-cycle reversible but with only 44% capacity retention after 500 cycles. These results unambiguously show the high reversibility of lattice-oxygen redox in both Li-ion and Na-ion systems. The contrast between Na2/3Mg1/3Mn2/3O2 and Li1.17Ni0.21Co0.08Mn0.54O2 systems suggests the importance of distinguishing lattice-oxygen redox from other oxygen activities for clarifying its intrinsic properties.
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Submitted 14 November, 2018;
originally announced November 2018.
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Observation of Anomalous Hall Effect in Noncollinear Antiferromagnetic Mn3Sn Films
Authors:
Yunfeng You,
Xianzhe Chen,
Xiaofeng Zhou,
Youdi Gu,
Ruiqi Zhang,
Feng Pan,
Cheng Song
Abstract:
Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120° spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in Mn3Sn films. Here we report the observation of robust AHE up to room temperature in quasi-epitaxial Mn3Sn thin films, prepared by magnetron sputtering. The growth of…
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Magnetotransport is at the center of the spintronics. Mn3Sn, an antiferromagnet that has a noncollinear 120° spin order, exhibits large anomalous Hall effect (AHE) at room temperature. But such a behavior has been remained elusive in Mn3Sn films. Here we report the observation of robust AHE up to room temperature in quasi-epitaxial Mn3Sn thin films, prepared by magnetron sputtering. The growth of both (11-20)- and (0001)-oriented Mn3Sn films provides a unique opportunity for comparing AHE in three different measurement configurations. When the magnetic field is swept along (0001) plane, such as the direction of [01-10] and [2-1-10] the films show comparatively higher anomalous Hall conductivity than its perpendicular counterpart ([0001]), irrespective of their respectively orthogonal current along [0001] or [01-10]. A quite weak ferromagnetic moment of 3 emu/cm^3 is obtained in (11-20)-oriented Mn3Sn films, guaranteeing the switching of the Hall signals with magnetization reversal. Our finding would advance the integration of Mn3Sn in antiferromagnetic spintronics.
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Submitted 7 November, 2018; v1 submitted 6 November, 2018;
originally announced November 2018.
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Magnon properties of random alloys
Authors:
Fan Pan,
Anna Delin,
Anders Bergman,
Lars Bergqvist
Abstract:
We study magnon properties in terms of spin stiffness, Curie temperatures and magnon spectrum of Fe-Ni, Co-Ni and Fe-Co random alloys using a combination of electronic structure calculations and atomistic spin dynamics simulations. Influence of the disorder are studied in detail by use of large supercells with random atomic arrangement. It is found that disorder affects the magnon spectrum in vast…
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We study magnon properties in terms of spin stiffness, Curie temperatures and magnon spectrum of Fe-Ni, Co-Ni and Fe-Co random alloys using a combination of electronic structure calculations and atomistic spin dynamics simulations. Influence of the disorder are studied in detail by use of large supercells with random atomic arrangement. It is found that disorder affects the magnon spectrum in vastly different ways depending on the system. Specifically, it is more pronounced in Fe-Ni alloys compared to Fe-Co alloys. In particular, the magnon spectrum at room temperature in Permalloy (Fe$_{20}$Ni$_{80}$) is found to be rather diffuse in a large energy interval while in Fe$_{75}$Co$_{25}$ it forms sharp branches. Fe-Co alloys are very interesting from a technological point of view due to the combination of large Curie temperatures and very low calculated Gilbert damping of $\sim$0.0007 at room temperature for Co concentrations around 20--30\%.
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Submitted 19 October, 2018;
originally announced October 2018.
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Spectroscopic Signature of Oxidized Oxygen States in Peroxides
Authors:
Zengqing Zhuo,
Chaitanya Das Pemmaraju,
John Vinson,
Chunjing Jia,
Brian Moritz,
Ilkyu Lee,
Shawn Sallies,
Qinghao Li,
Jinpeng Wu,
Kehua Dai,
Yi-de Chuang,
Zahid Hussain,
Feng Pan,
Thomas P. Devereaux,
Wanli Yang
Abstract:
Recent debates on the oxygen redox behaviors in battery electrodes have triggered a pressing demand for the reliable detection and understanding of non-divalent oxygen states beyond conventional absorption spectroscopy. Here, enabled by high-efficiency mapping of resonant inelastic X-ray scattering (mRIXS) coupled with first-principles calculations, we report distinct mRIXS features of the oxygen…
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Recent debates on the oxygen redox behaviors in battery electrodes have triggered a pressing demand for the reliable detection and understanding of non-divalent oxygen states beyond conventional absorption spectroscopy. Here, enabled by high-efficiency mapping of resonant inelastic X-ray scattering (mRIXS) coupled with first-principles calculations, we report distinct mRIXS features of the oxygen states in Li2O, Li2CO3, and especially, Li2O2, which are successfully reproduced and interpreted theoretically. mRIXS signals are dominated by valence-band decays in Li2O and Li2CO3. However, the oxidized oxygen in Li2O2 leads to partially unoccupied O-2p states that yield a specific intra-band excitonic feature in mRIXS. Such a feature displays a specific emission energy in mRIXS, which disentangles the oxidized oxygen states from the dominating transition-metal/oxygen hybridization features in absorption spectroscopy, thus providing critical hints for both detecting and understanding the oxygen redox reactions in transition-metal oxide based battery materials.
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Submitted 17 October, 2018; v1 submitted 21 September, 2018;
originally announced September 2018.
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Spin-orbit torque in completely compensated synthetic antiferromagnet
Authors:
P. X. Zhang,
L. Y. Liao,
G. Y. Shi,
R. Q. Zhang,
H. Q. Wu,
Y. Y. Wang,
F. Pan,
C. Song
Abstract:
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 O…
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Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a perpendicularly magnetized Pt/[Co/Pd]/Ru/[Co/Pd] SAF structure, which exhibits completely compensated magnetization and an exchange coupling field up to 2100 Oe. The magnetizations of two Co/Pd layers can be switched between two antiparallel states simultaneously by spin-orbit torque. The magnetization switching can be read out due to much stronger spin-orbit coupling at bottom Pt/[Co/Pd] interface compared to its upper counterpart without Pt. Both experimental and theoretical analyses unravel that the torque efficiency of antiferromagnetic coupled stacks is significantly higher than the ferromagnetic counterpart, making the critical switching current of SAF comparable to the conventional single ferromagnet. Besides adding an important dimension to spin-orbit torque, the efficient switching of completely compensated SAF might advance magnetic memory devices with high density, high speed and low power consumption.
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Submitted 28 May, 2018; v1 submitted 22 May, 2018;
originally announced May 2018.
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Strong orientation dependent spin-orbit torque in antiferromagnet Mn2Au
Authors:
X. F. Zhou,
J. Zhang,
F. Li,
X. Z. Chen,
G. Y. Shi,
Y. Z. Tan,
Y. D. Gu,
M. S. Saleem,
H. Q. Wu,
F. Pan,
C. Song
Abstract:
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for Néel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101)…
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Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin sub-lattices is a unique metallic material for Néel-order spin-orbit torque (SOT) switching. Here we investigate the SOT switching in quasi-epitaxial (103), (101) and (204) Mn2Au films prepared by a simple magnetron sputtering method. We demonstrate current induced antiferromagnetic moment switching in all the prepared Mn2Au films by a short current pulse at room temperature, whereas different orientated films exhibit distinguished switching characters. A direction-independent reversible switching is attained in Mn2Au (103) films due to negligible magnetocrystalline anisotropy energy, while for Mn2Au (101) and (204) films, the switching is invertible with the current applied along the in-plane easy axis and its vertical axis, but becomes attenuated seriously during initially switching circles when the current is applied along hard axis, because of the existence of magnetocrystalline anisotropy energy. Besides the fundamental significance, the strong orientation dependent SOT switching, which was not realized irrespective of ferromagnet and antiferromagnet, provides versatility for spintronics.
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Submitted 15 April, 2018;
originally announced April 2018.