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Dynamics of Symmetry-Protected Topological Matter on a Quantum Computer
Authors:
Miguel Mercado,
Kyle Chen,
Parth Darekar,
Aiichiro Nakano,
Rosa Di Felice,
Stephan Haas
Abstract:
Control of topological edge modes is desirable for encoding quantum information resiliently against external noise. Their implementation on quantum hardware, however, remains a long-standing problem due to current limitations of circuit depth and noise, which grows with the number of time steps. By utilizing recently developed constant-depth quantum circuits in which the circuit depth is independe…
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Control of topological edge modes is desirable for encoding quantum information resiliently against external noise. Their implementation on quantum hardware, however, remains a long-standing problem due to current limitations of circuit depth and noise, which grows with the number of time steps. By utilizing recently developed constant-depth quantum circuits in which the circuit depth is independent of time, we demonstrate successful long-time dynamics simulation of bulk and surface modes in topological insulators on noisy intermediate-scale quantum (NISQ) processors, which exhibits robust signatures of localized topological modes. We further identify a class of one-dimensional topological Hamiltonians that can be readily simulated with NISQ hardware. Our results provide a pathway towards stable long-time implementation of topological quantum spin systems on present day quantum processors.
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Submitted 10 August, 2024; v1 submitted 19 February, 2024;
originally announced February 2024.
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Tracking Surface Charge Dynamics on Single Nanoparticles
Authors:
Ritika Dagar,
Wenbin Zhang,
Philipp Rosenberger,
Thomas M. Linker,
Ana Sousa-Castillo,
Marcel Neuhaus,
Sambit Mitra,
Shubhadeep Biswas,
Alexandra Feinberg,
Adam M. Summers,
Aiichiro Nakano,
Priya Vashishta,
Fuyuki Shimojo,
Jian Wu,
Cesar Costa Vera,
Stefan A. Maier,
Emiliano Cortés,
Boris Bergues,
Matthias F. Kling
Abstract:
Surface charges play a fundamental role in physics and chemistry, particularly in shaping the catalytic properties of nanomaterials. Tracking nanoscale surface charge dynamics remains challenging due to the involved length and time scales. Here, we demonstrate real-time access to the nanoscale charge dynamics on dielectric nanoparticles employing reaction nanoscopy. We present a four-dimensional v…
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Surface charges play a fundamental role in physics and chemistry, particularly in shaping the catalytic properties of nanomaterials. Tracking nanoscale surface charge dynamics remains challenging due to the involved length and time scales. Here, we demonstrate real-time access to the nanoscale charge dynamics on dielectric nanoparticles employing reaction nanoscopy. We present a four-dimensional visualization of the non-linear charge dynamics on strong-field irradiated single SiO$_2$ nanoparticles with femtosecond-nanometer resolution and reveal how surface charges affect surface molecular bonding with quantum dynamical simulations. We performed semi-classical simulations to uncover the roles of diffusion and charge loss in the surface charge redistribution process. Understanding nanoscale surface charge dynamics and its influence on chemical bonding on a single nanoparticle level unlocks an increased ability to address global needs in renewable energy and advanced healthcare.
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Submitted 4 January, 2024;
originally announced January 2024.
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Superconductivity in a ferroelectric-like topological semimetal SrAuBi
Authors:
Hidefumi Takahashi,
Tomohiro Sasaki,
Akitoshi Nakano,
Kazuto Akiba,
Masayuki Takahashi,
Alex H. Mayo,
Masaho Onose,
Tatsuo C. Kobayashi,
Shintaro Ishiwata
Abstract:
Given the rarity of metallic systems that exhibit ferroelectric-like transitions, it is apparently challenging to find a system that simultaneously possesses superconductivity and ferroelectric-like structural instability. Here, we report the observation of superconductivity at 2.4 K in a layered semimetal SrAuBi characterized by strong spin-orbit coupling (SOC) and ferroelectric-like lattice dist…
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Given the rarity of metallic systems that exhibit ferroelectric-like transitions, it is apparently challenging to find a system that simultaneously possesses superconductivity and ferroelectric-like structural instability. Here, we report the observation of superconductivity at 2.4 K in a layered semimetal SrAuBi characterized by strong spin-orbit coupling (SOC) and ferroelectric-like lattice distortion. Single crystals of SrAuBi have been successfully synthesized and found to show a polar-nonpolar structure transition at 214 K, which is associated with the buckling of Au-Bi honeycomb lattice. On the basis of the band calculations considering SOC, we found significant Rashba-type spin splitting and symmetry-protected multiple Dirac points near the Fermi level. We believe that this discovery opens up new possibilities of pursuing exotic superconducting states associated with the semimetallic band structure without space inversion symmetry and the topological surface state with the strong SOC.
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Submitted 19 December, 2023; v1 submitted 16 December, 2023;
originally announced December 2023.
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Molecular Autonomous Pathfinder using Deep Reinforcement Learning
Authors:
Ken-ichi Nomura,
Ankit Mishra,
Tian Sang,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Diffusion in solids is a slow process that dictates rate-limiting processes in key chemical reactions. Unlike crystalline solids that offer well-defined diffusion pathways, the lack of similar structural motifs in amorphous or glassy materials poses a great scientific challenge in estimating slow diffusion time. To tackle this problem, we have developed an AI-guided long-time atomistic simulation…
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Diffusion in solids is a slow process that dictates rate-limiting processes in key chemical reactions. Unlike crystalline solids that offer well-defined diffusion pathways, the lack of similar structural motifs in amorphous or glassy materials poses a great scientific challenge in estimating slow diffusion time. To tackle this problem, we have developed an AI-guided long-time atomistic simulation approach: Molecular Autonomous Pathfinder (MAP) framework based on Deep Reinforcement Learning (RL), where RL agent is trained to uncover energy efficient diffusion pathways. We employ Deep Q-Network architecture with distributed prioritized replay buffer enabling fully online agent training with accelerated experience sampling by an ensemble of asynchronous agents. After training, the agents provide atomistic configurations of diffusion pathways with their energy profile. We use a piecewise Nudged Elastic Band to refine the energy profile of the obtained pathway and corresponding diffusion time on the basis of transition state theory. With MAP, we have successfully identified atomistic mechanisms along molecular diffusion pathways in amorphous silica, with time scales comparable to experiments.
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Submitted 8 December, 2023;
originally announced December 2023.
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Molecular orbital formation and metastable short-range ordered structure in VO$_2$
Authors:
Shunsuke Kitou,
Akitoshi Nakano,
Masato Imaizumi,
Yuiga Nakamura,
Ichiro Terasaki,
Taka-hisa Arima
Abstract:
The metal-insulator transition (MIT) in vanadium dioxide VO$_2$ due to V-V dimerization has been extensively discussed for decades. While it is widely acknowledged that electron correlations, Peierls instabilities, and molecular orbital formations are crucial for understanding the MIT of VO$_2$, the primary origin of the MIT remains controversial. In this study, we delve into the crystal structure…
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The metal-insulator transition (MIT) in vanadium dioxide VO$_2$ due to V-V dimerization has been extensively discussed for decades. While it is widely acknowledged that electron correlations, Peierls instabilities, and molecular orbital formations are crucial for understanding the MIT of VO$_2$, the primary origin of the MIT remains controversial. In this study, we delve into the crystal structure and orbital state of VO$_2$ through synchrotron x-ray diffraction experiments. The molecular orbital formation corresponding to the V-V dimerization is directly observed in the low-temperature insulating monoclinic phase, called the M1 phase, as indicated by the valence electron density distribution. Moreover, diffuse scattering observed in the high-temperature metal phase of rutile structure suggests the presence of short-range correlation of V displacements, which is not directly attributed to the structural fluctuation of the M1 phase. The short-range order in the rutile phase will be the key to understanding the MIT in this system.
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Submitted 8 March, 2024; v1 submitted 16 October, 2023;
originally announced October 2023.
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Dominant role of charge ordering on high harmonic generation in Pr_{0.6}Ca_{0.4}MnO_{3}
Authors:
A. Nakano,
K. Uchida,
Y. Tomioka,
M. Takaya,
Y. Okimoto,
K. Tanaka
Abstract:
High-harmonic generation (HHG) is a typical high-order nonlinear optical phenomenon and can be used to probe electronic structures of solids. Here, we investigate the temperature dependence of HHG from Pr_{0.6}Ca_{0.4}MnO_{3} in the range of 7 K to 294 K including the charge ordering (CO) transition and magnetic transition temperatures. The high-harmonic intensity remains almost constant in the hi…
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High-harmonic generation (HHG) is a typical high-order nonlinear optical phenomenon and can be used to probe electronic structures of solids. Here, we investigate the temperature dependence of HHG from Pr_{0.6}Ca_{0.4}MnO_{3} in the range of 7 K to 294 K including the charge ordering (CO) transition and magnetic transition temperatures. The high-harmonic intensity remains almost constant in the high-temperature charge-disordered phase. However, as the temperature is lowered, it starts to gradually increase near the CO transition temperature where an optical gap related to the CO phase appears. The anomalous gap energy dependence resembles the one recently reported in a Mott insulator. We attribute the HHG suppression at high temperatures to the destructive interference among high-harmonic emissions from thermally activated multiple CO configurations. Our results suggest that HHG is a promising tool for probing the fluctuation of local order in strongly correlated systems.
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Submitted 12 September, 2023;
originally announced September 2023.
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Melting of excitonic insulator phase by an intense terahertz pulse in Ta$_2$NiSe$_5$
Authors:
Naoki Takamura,
Tatsuya Miyamoto,
Ryohei Ikeda,
Tetsushi Kubo,
Masaki Yamamoto,
Hiroki Sato,
Yang Han,
Takayuki Ito,
Tetsu Sato,
Akitoshi Nakano,
Hiroshi Sawa,
Hiroshi Okamoto
Abstract:
In this study, the optical response to a terahertz pulse was investigated in the transition metal chalcogenide Ta$_2$NiSe$_5$, a candidate excitonic insulator. First, by irradiating a terahertz pulse with a relatively weak electric field (0.3 MV/cm), the spectral changes in reflectivity near the absorption edge due to third-order optical nonlinearity were measured and the absorption peak character…
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In this study, the optical response to a terahertz pulse was investigated in the transition metal chalcogenide Ta$_2$NiSe$_5$, a candidate excitonic insulator. First, by irradiating a terahertz pulse with a relatively weak electric field (0.3 MV/cm), the spectral changes in reflectivity near the absorption edge due to third-order optical nonlinearity were measured and the absorption peak characteristic of the excitonic phase just below the interband transition was identified. Next, by irradiating a strong terahertz pulse with a strong electric field of 1.65 MV/cm, the absorption of the excitonic phase was found to be reduced, and a Drude-like response appeared in the mid-infrared region. These responses can be interpreted as carrier generation by exciton dissociation induced by the electric field, resulting in the partial melting of the excitonic phase and metallization. The presence of a distinct threshold electric field for carrier generation indicates exciton dissociation via quantum-tunnelling processes. The spectral change due to metallization by the electric field is significantly different from that due to the strong optical excitation across the gap, which can be explained by the different melting mechanisms of the excitonic phase in the two types of excitations.
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Submitted 11 September, 2023;
originally announced September 2023.
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Pressure-Dependent Layer-by-Layer Oxidation of ZrS2(001) Surface
Authors:
Liqiu Yang,
Rafael Jaramillo,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transit…
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Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of broad TMDC materials.
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Submitted 6 March, 2023;
originally announced March 2023.
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Probing the presence and absence of metal-fullerene electron transfer reactions in helium nanodroplets by deflection measurements
Authors:
John W. Niman,
Benjamin S. Kamerin,
Thomas H. Villers,
Thomas M. Linker,
Aiichiro Nakano,
Vitaly V. Kresin
Abstract:
Metal-fullerene compounds are characterized by significant electron transfer to the fullerene cage, giving rise to an electric dipole moment. We use the method of electrostatic beam deflection to verify whether such reactions take place within superfluid helium nanodroplets between an embedded C$_{60}$ molecule and either alkali (heliophobic) or rare-earth (heliophilic) atoms. The two cases lead t…
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Metal-fullerene compounds are characterized by significant electron transfer to the fullerene cage, giving rise to an electric dipole moment. We use the method of electrostatic beam deflection to verify whether such reactions take place within superfluid helium nanodroplets between an embedded C$_{60}$ molecule and either alkali (heliophobic) or rare-earth (heliophilic) atoms. The two cases lead to distinctly different outcomes: C$_{60}$Na$_n$ ($n$=1-4) display no discernible dipole moment, while C$_{60}$Yb is strongly polar. This suggests that the fullerene and small alkali clusters fail to form a charge-transfer bond in the helium matrix despite their strong van der Waals attraction. The C$_{60}$Yb dipole moment, on the other hand, is in agreement with the value expected for an ionic complex.
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Submitted 25 April, 2022;
originally announced April 2022.
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Giant Peltier Conductivity in an Uncompensated Semimetal Ta2PdSe6
Authors:
Akitoshi Nakano,
Ai Yamakage,
Urara Maruoka,
Hiroki Taniguchi,
Yukio Yasui,
Ichiro Terasaki
Abstract:
Thermoelectric properties of single crystal Ta2PdSe6 is investigated by means of transport measurements, and a density functional calculation. We found a giant Peltier conductivity of 100 Acm-1K-1 at 10 K and successfully explained it by means of conventional semiconductor theory. We concluded that an uncompensated semimetal, high mobility, and heavy effective mass are responsible for the giant Pe…
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Thermoelectric properties of single crystal Ta2PdSe6 is investigated by means of transport measurements, and a density functional calculation. We found a giant Peltier conductivity of 100 Acm-1K-1 at 10 K and successfully explained it by means of conventional semiconductor theory. We concluded that an uncompensated semimetal, high mobility, and heavy effective mass are responsible for the giant Peltier conductivity. Our finding opens a new ground in the field of thermoelectrics to explore much better semimetals for a new possible application such as an electric current generator for a superconducting magnet.
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Submitted 5 September, 2021;
originally announced September 2021.
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Hybridization-gap Formation and Superconductivity in the Pressure-induced Semimetallic Phase of the Excitonic Insulator Ta$_2$NiSe$_5$
Authors:
Kazuyuki Matsubayashi,
Hidekazu Okamura,
Takashi Mizokawa,
Naoyuki Katayama,
Akitoshi Nakano,
Hiroshi Sawa,
Tatsuya Kaneko,
Tatsuya Toriyama,
Takehisa Konishi,
Yukinori Ohta,
Hiroto Arima,
Rina Yamanaka,
Akihiko Hisada,
Taku Okada,
Yuka Ikemoto,
Taro Moriwaki,
Koji Munakata,
Akiko Nakao,
Minoru Nohara,
Yangfan Lu,
Hidenori Takagi,
Yoshiya Uwatoko
Abstract:
The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic…
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The excitonic insulator Ta$_2$NiSe$_5$ experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps = 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced semimetal, with lowering temperature, experiences a transition to another semimetal with a partial-gap of 0.1-0.2 eV, accompanied with a monoclinic distortion analogous to that occurs at the excitonic transition below Ps. We argue that the partial-gap originates primarily from a symmetry-allowed hybridization of Ta-conduction and Ni-valence bands due to the lattice distortion, indicative of the importance of electron-lattice coupling. The transition is suppressed with increasing pressure to Pc = 8 GPa. Superconductivity with a maximum Tsc = 1.2 K emerges around Pc, likely mediated by strongly electron-coupled soft phonons. The electron-lattice coupling is as important ingredient as the excitonic instability in Ta2NiSe5.
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Submitted 1 July, 2021; v1 submitted 2 June, 2021;
originally announced June 2021.
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Room Temperature Thermoelectric Properties of Isostructural Selenides Ta2PdS6 and Ta2PdSe6
Authors:
Akitoshi Nakano,
Urara Maruoka,
Fumiaki Kato,
Hiroki Taniguchi,
Ichiro Terasaki
Abstract:
We have measured thermoelectric properties of Ta2PdX6 (X=S, Se) around room temperature using single crystal samples. We find that the power factor of Ta2PdX6 is relatively high from middle-low to room temperatures, and notably Ta2PdSe6 shows the largest power factor among thermoelectric materials with an electrical conductivity of 10-2 Ωcm at 300 K. Ta2PdS6 will be a possible candidate for a Pelt…
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We have measured thermoelectric properties of Ta2PdX6 (X=S, Se) around room temperature using single crystal samples. We find that the power factor of Ta2PdX6 is relatively high from middle-low to room temperatures, and notably Ta2PdSe6 shows the largest power factor among thermoelectric materials with an electrical conductivity of 10-2 Ωcm at 300 K. Ta2PdS6 will be a possible candidate for a Peltier cooling material if the lattice thermal conductivity is reduced by chemical substitution.
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Submitted 21 January, 2021;
originally announced January 2021.
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Lattice Thermal Transport in Two-Dimensional Alloys and Fractal Heterostructures
Authors:
Aravind Krishnamoorthy,
Nitish Baradwaj,
Aiichiro Nakano,
Rajiv K. Kalia,
Priya Vashishta
Abstract:
Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synth…
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Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of (Mo|W)Se$_2$ monolayer crystals including Mo$_{1-x}$W$_x$Se$_2$ alloys with substitutional point defects, periodic MoSe$_2$|WSe$_2$ heterostructures with characteristic length scales and scale-free fractal MoSe$_2$|WSe$_2$ heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.
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Submitted 30 September, 2020;
originally announced September 2020.
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EZFF: Python Library for Multi-Objective Parameterization and Uncertainty Quantification of Interatomic Forcefields for Molecular Dynamics
Authors:
Aravind Krishnamoorthy,
Ankit Mishra,
Deepak Kamal,
Sungwook Hong,
Ken-ichi Nomura,
Subodh Tiwari,
Aiichiro Nakano,
Rajiv Kalia,
Rampi Ramprasad,
Priya Vashishta
Abstract:
Parameterization of interatomic forcefields is a necessary first step in performing molecular dynamics simulations. This is a non-trivial global optimization problem involving quantification of multiple empirical variables against one or more properties. We present EZFF, a lightweight Python library for parameterization of several types of interatomic forcefields implemented in several molecular d…
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Parameterization of interatomic forcefields is a necessary first step in performing molecular dynamics simulations. This is a non-trivial global optimization problem involving quantification of multiple empirical variables against one or more properties. We present EZFF, a lightweight Python library for parameterization of several types of interatomic forcefields implemented in several molecular dynamics engines against multiple objectives using genetic-algorithm-based global optimization methods. The EZFF scheme provides unique functionality such as the parameterization of hybrid forcefields composed of multiple forcefield interactions as well as built-in quantification of uncertainty in forcefield parameters and can be easily extended to other forcefield functional forms as well as MD engines.
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Submitted 30 September, 2020;
originally announced September 2020.
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Predictive Synthesis of Quantum Materials by Probabilistic Reinforcement Learning
Authors:
Pankaj Rajak,
Aravind Krishnamoorthy,
Ankit Mishra,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-…
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Predictive materials synthesis is the primary bottleneck in realizing new functional and quantum materials. Strategies for synthesis of promising materials are currently identified by time-consuming trial and error approaches and there are no known predictive schemes to design synthesis parameters for new materials. We use reinforcement learning to predict optimal synthesis schedules, i.e. a time-sequence of reaction conditions like temperatures and reactant concentrations, for the synthesis of a prototypical quantum material, semiconducting monolayer MoS$_{2}$, using chemical vapor deposition. The predictive reinforcement leaning agent is coupled to a deep generative model to capture the crystallinity and phase-composition of synthesized MoS$_{2}$ during CVD synthesis as a function of time-dependent synthesis conditions. This model, trained on 10000 computational synthesis simulations, successfully learned threshold temperatures and chemical potentials for the onset of chemical reactions and predicted new synthesis schedules for producing well-sulfidized crystalline and phase-pure MoS$_{2}$, which were validated by computational synthesis simulations. The model can be extended to predict profiles for synthesis of complex structures including multi-phase heterostructures and can also predict long-time behavior of reacting systems, far beyond the domain of the MD simulations used to train the model, making these predictions directly relevant to experimental synthesis.
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Submitted 14 September, 2020;
originally announced September 2020.
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Differences in Sb2Te3 growth by pulsed laser and sputter deposition
Authors:
Jing Ning,
J. C. Martinez,
Jamo Momand,
Heng Zhang,
Subodh C. Tiwari,
Fuyuki Shimojo,
Aiichiro Nakano,
Rajiv K. Kalia,
Priya Vashishta,
Paulo S. Branicio,
Bart J. Kooi,
Robert E. Simpson
Abstract:
High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulse…
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High quality Van der Waals chalcogenides are important for phase change data storage, thermoelectrics, and spintronics. Using a combination of statistical design of experiments and density functional theory, we clarify how the out-of-equilibrium van der Waals epitaxial deposition methods can improve the crystal quality of Sb2Te3 films. We compare films grown by radio frequency sputtering and pulsed laser deposition (PLD). The growth factors that influence the crystal quality for each method are different. For PLD grown films a thin amorphous Sb2Te3 seed layer most significantly influences the crystal quality. In contrast, the crystalline quality of films grown by sputtering is rather sensitive to the deposition temperature and less affected by the presence of a seed layer. This difference is somewhat surprising as both methods are out-of-thermal-equilibrium plasma-based methods. Non-adiabatic quantum molecular dynamics simulations show that this difference originates from the density of excited atoms in the plasma. The PLD plasma is more intense and with higher energy than that used in sputtering, and this increases the electronic temperature of the deposited atoms, which concomitantly increases the adatom diffusion lengths in PLD. In contrast, the adatom diffusivity is dominated by the thermal temperature for sputter grown films. These results explain the wide range of Sb2Te3 and superlattice crystal qualities observed in the literature. These results indicate that, contrary to popular belief, plasma-based deposition methods are suitable for growing high quality crystalline chalcogenides.
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Submitted 14 September, 2020; v1 submitted 13 September, 2020;
originally announced September 2020.
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Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe$_{2}$ with Femtosecond Core-Level Spectroscopy
Authors:
Andrew R. Attar,
Hung-Tzu Chang,
Alexander Britz,
Xiang Zhang,
Ming-Fu Lin,
Aravind Krishnamoorthy,
Thomas Linker,
David Fritz,
Daniel M. Neumark,
Rajiv K. Kalia,
Aiichiro Nakano,
Pulickel Ajayan,
Priya Vashishta,
Uwe Bergmann,
Stephen R. Leone
Abstract:
We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, th…
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We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe$_{2}$ semiconductor. By interrogating the valence electronic structure via localized Te 4$\textit{d}$ (39-46 eV) and Mo 4$\textit{p}$ (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15$\pm$5 fs and 380$\pm$90 fs, respectively, and an electron-hole recombination time of 1.5$\pm$0.1 ps. Furthermore, excitations of coherent out-of-plane A$_{1g}$ (5.1 THz) and in-plane E$_{1g}$ (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A$_{1g}$ coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe$_{2}$ within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.
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Submitted 14 October, 2020; v1 submitted 1 September, 2020;
originally announced September 2020.
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Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals
Authors:
Seong Soon Jo,
Akshay Singh,
Liqiu Yang,
Subodh C. Tiwari,
Sungwook Hong,
Aravind Krishnamoorthy,
Maria Gabriela Sales,
Sean M. Oliver,
Joshua Fox,
Randal L. Cavalero,
David W. Snyder,
Patrick M. Vora,
Stephen J. McDonnell,
Priya Vashishta,
Rajiv K. Kalia,
Aiichiro Nakano,
Rafael Jaramillo
Abstract:
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and p…
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A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.
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Submitted 16 November, 2020; v1 submitted 30 June, 2020;
originally announced July 2020.
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Towards Dynamic Simulations of Materials on Quantum Computers
Authors:
Lindsay Bassman,
Kuang Liu,
Aravind Krishnamoorthy,
Thomas Linker,
Yifan Geng,
Daniel Shebib,
Shogo Fukushima,
Fuyuki Shimojo,
Rajiv K. Kalia,
Aiichiro Nakano,
Priya Vashishta
Abstract:
A highly anticipated application for quantum computers is as a universal simulator of quantum many-body systems, as was conjectured by Richard Feynman in the 1980s. The last decade has witnessed the growing success of quantum computing for simulating static properties of quantum systems, i.e., the ground state energy of small molecules. However, it remains a challenge to simulate quantum many-body…
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A highly anticipated application for quantum computers is as a universal simulator of quantum many-body systems, as was conjectured by Richard Feynman in the 1980s. The last decade has witnessed the growing success of quantum computing for simulating static properties of quantum systems, i.e., the ground state energy of small molecules. However, it remains a challenge to simulate quantum many-body dynamics on current-to-near-future noisy intermediate-scale quantum computers. Here, we demonstrate successful simulation of nontrivial quantum dynamics on IBM's Q16 Melbourne quantum processor and Rigetti's Aspen quantum processor; namely, ultrafast control of emergent magnetism by THz radiation in an atomically-thin two-dimensional material. The full code and step-by-step tutorials for performing such simulations are included to lower the barrier to access for future research on these two quantum computers. As such, this work lays a foundation for the promising study of a wide variety of quantum dynamics on near-future quantum computers, including dynamic localization of Floquet states and topological protection of qubits in noisy environments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Weak Ferroelectricity in n = 2 pseudo Ruddlesden-Popper-type niobate Li2SrNb2O7
Authors:
Takayuki Nagai,
Hirokazu Shirakuni,
Akitoshi Nakano,
Hiroshi Sawa,
Hiroki Moriwake,
Ichiro Terasaki,
Hiroki Taniguchi
Abstract:
Li2SrNb2O7 (LSNO) crystallizes in a structure closely related to n = 2 Ruddlesden-Popper-type compounds, which is gen-erally formed by intergrowth of 2-dimensional perovskite-type blocks and rocksalt-type layers. The present study demonstrates a coexistence of spontaneous polarization and anti-ferroelectric-like nonlinear response in LSNO at 80 K, suggesting a weak ferroelectricity below the phase…
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Li2SrNb2O7 (LSNO) crystallizes in a structure closely related to n = 2 Ruddlesden-Popper-type compounds, which is gen-erally formed by intergrowth of 2-dimensional perovskite-type blocks and rocksalt-type layers. The present study demonstrates a coexistence of spontaneous polarization and anti-ferroelectric-like nonlinear response in LSNO at 80 K, suggesting a weak ferroelectricity below the phase transition temperature of 217 K. A combination of first-principles cal-culations and single crystal x-ray diffractions clarifies a polar P21cn structure for the ground state of LSNO, where an in-plane anti-ferroelectric displacement and an out-of-plane polar shift simultaneously take place. The present study offers a new perspective to design ferroelectric and antiferroelectric materials with Ruddlesden-Popper-type compounds.
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Submitted 18 June, 2019;
originally announced June 2019.
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Effect of Cu intercalation and pressure on excitonic interaction in 1T-TiSe2
Authors:
Shunsuke Kitou,
Akitoshi Nakano,
Shintaro Kobayashi,
Kento Sugawara,
Naoyuki Katayama,
Naoyuki Maejima,
Akihiko Machida,
Tetsu Watanuki,
Koichi Ichimura,
Satoshi Tanda,
Toshikazu Nakamura,
Hiroshi Sawa
Abstract:
1T-TiSe2 has a semimetallic band structure at room temperature and undergoes phase transition to a triple-q charge density wave (CDW) state with a commensurate superlattice structure (2a * 2a * 2c) below Tc ~ 200 K at ambient pressure. This phase transition is caused by cooperative phenomena involving electron-phonon and electron-hole (excitonic) interactions, and cannot be described by a standard…
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1T-TiSe2 has a semimetallic band structure at room temperature and undergoes phase transition to a triple-q charge density wave (CDW) state with a commensurate superlattice structure (2a * 2a * 2c) below Tc ~ 200 K at ambient pressure. This phase transition is caused by cooperative phenomena involving electron-phonon and electron-hole (excitonic) interactions, and cannot be described by a standard CDW framework. By Cu intercalation or the application of pressure, this phase transition temperature is suppressed and superconductivity (SC) appears. However, it is not clear what kind of order parameters are affected by these two procedures. We investigated the crystal structure of CuxTiSe2 and pressurized 1T-TiSe2 around the SC state by synchrotron x-ray diffraction on single crystals. In the high-temperature phase, the variation of structural parameters for the case of Cu intercalation and application of pressure are considerably different. Moreover, the relationship between the critical points of the CDW phase transition and the SC dome are also different for the two cases. The excitonic interaction appears to play an important role in the P-T phase diagram of 1T-TiSe2, but not in the x-T phase diagram.
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Submitted 28 March, 2019; v1 submitted 6 February, 2019;
originally announced February 2019.
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Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface x-ray scattering
Authors:
I-Cheng Tung,
Aravind Krishnamoorthy,
Sridhar Sadasivam,
Hua Zhou,
Qi Zhang,
Kyle L. Seyler,
Genevieve Clark,
Ehren M. Mannebach,
Clara Nyby,
Friederike Ernst,
Diling Zhu,
James M. Glownia,
Michael E. Kozina,
Sanghoon Song,
Silke Nelson,
Hiroyuki Kumazoe,
Fuyuki Shimojo,
Rajiv K. Kalia,
Priya Vashishta,
Pierre Darancet,
Tony F. Heinz,
Aiichiro Nakano,
Xiaodong Xu,
Aaron M. Lindenberg,
Haidan Wen
Abstract:
X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structu…
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X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structural properties at the two-dimensional limit. Here, we demonstrate femtosecond surface x-ray diffraction in combination with crystallographic model-refinement calculations to quantify the ultrafast structural dynamics of monolayer WSe$_2$ crystals supported on a substrate. We found the absorbed optical photon energy is preferably coupled to the in-plane lattice vibrations within 2 picoseconds while the out-of-plane lattice vibration amplitude remains unchanged during the first 10 picoseconds. The model-assisted fitting suggests an asymmetric intralayer spacing change upon excitation. The observed nonequilibrium anisotropic structural dynamics in two-dimensional materials agrees with first-principles nonadiabatic modeling in both real and momentum space, marking the distinct structural dynamics of monolayer crystals from their bulk counterparts. The demonstrated methods unlock the benefit of surface sensitive x-ray scattering to quantitatively measure ultrafast structural dynamics in atomically thin materials and across interfaces.
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Submitted 28 November, 2018;
originally announced November 2018.
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Electron-Phonon Coupling Mode in Excitonic Insulator
Authors:
Akitoshi Nakano,
Takumi Hasegawa,
Shinya Tamura,
Naoyuki Katayama,
Satoshi Tsutsui,
Hiroshi Sawa
Abstract:
Ta2NiSe5 is considered a promising excitonic insulator (EI) candidate with slight phonon contributions, since it exhibits a tiny orthorhombic-to-monoclinic structural distortion at 328 K without any superlattice structure. Our synchrotron inelastic x-ray scattering measurements reveal strong electron-optical-phonon coupling occurring at temperatures higher than the transition temperature. Density…
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Ta2NiSe5 is considered a promising excitonic insulator (EI) candidate with slight phonon contributions, since it exhibits a tiny orthorhombic-to-monoclinic structural distortion at 328 K without any superlattice structure. Our synchrotron inelastic x-ray scattering measurements reveal strong electron-optical-phonon coupling occurring at temperatures higher than the transition temperature. Density functional theoretical calculations indicate that two coupled optical modes arise due to the vibration of Ta and Se ions. Further, the two modes are frozen such that Ta and Se approach each other, forming atomic-displacement-type electric dipoles in the monoclinic phase. The characteristic of electronic toroidal moment formation by the antiferro-arrangements of electric dipoles is the universality of EI between Ta2NiSe5 and 1T-TiSe2.
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Submitted 1 March, 2018;
originally announced March 2018.