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Topological Hall Effect Driven by Short-Range Magnetic Orders in EuZn$_2$As$_2$
Authors:
Enkui Yi,
Dong Feng Zheng,
Feihao Pan,
Hongxia Zhang,
Bin Wang,
Bowen Chen,
Detong Wu,
Huili Liang,
Zeng Xia Mei,
Hao Wu,
Shengyuan A. Yang,
Peng Cheng,
Meng Wang,
Bing Shen
Abstract:
Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-ty…
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Short-range (SR) magnetic orders such as magnetic glass orders or fluctuations in a quantum system usually host exotic states or critical behaviors. As the long-range (LR) magnetic orders, SR magnetic orders can also break time-reversal symmetry and drive the non-zero Berry curvature leading to novel transport properties. In this work, we report that in EuZn$_2$As$_2$ compound, besides the LR A-type antiferromagnetic (AF) order, the SR magnetic order is observed in a wide temperature region. The magnetization measurements and electron spin resonance (ESR) measurements reveal the ferromagnetic (FM) correlations for this SR magnetic order which results in an obvious anomalous Hall effect above the AF transition. Moreover the ESR results reveal that this FM SR order coexists with LR AF order exhibiting anisotropic magnetic correlations below the AF transition. The interactions of LR and SR magnetism evolving with temperature and field can host non-zero spin charility and berry curvature leading the additional topological Hall contribution even in a centrosymmetric simple AF system. Our results indicate that EuZn$_2$As$_2$ is a fertile platform to investigate exotic magnetic and electronic states.
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Submitted 24 January, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Simulating Chern insulators on a superconducting quantum processor
Authors:
Zhong-Cheng Xiang,
Kaixuan Huang,
Yu-Ran Zhang,
Tao Liu,
Yun-Hao Shi,
Cheng-Lin Deng,
Tong Liu,
Hao Li,
Gui-Han Liang,
Zheng-Yang Mei,
Haifeng Yu,
Guangming Xue,
Ye Tian,
Xiaohui Song,
Zhi-Bo Liu,
Kai Xu,
Dongning Zheng,
Franco Nori,
Heng Fan
Abstract:
The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with v…
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The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.
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Submitted 7 September, 2023; v1 submitted 24 July, 2022;
originally announced July 2022.
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Anisotropic nematic fluctuations above the ferroquadrupolar transition in TmVO$_4$
Authors:
Z. Wang,
I. Vinograd,
Z. Mei,
P. Menegasso,
D. Garcia,
P. Massat,
I. R. Fisher,
N. J. Curro
Abstract:
TmVO$_4$ exhibits ferroquadrupolar order below 2.15 K with a well-isolated non-Kramers ground state doublet, and is a model system to understand Ising nematic order. We present $^{51}$V nuclear magnetic resonance data as a function of field orientation in a single crystal. Although the spectra are well understood in terms of direct dipolar hyperfine couplings, the spin lattice relaxation rate exhi…
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TmVO$_4$ exhibits ferroquadrupolar order below 2.15 K with a well-isolated non-Kramers ground state doublet, and is a model system to understand Ising nematic order. We present $^{51}$V nuclear magnetic resonance data as a function of field orientation in a single crystal. Although the spectra are well understood in terms of direct dipolar hyperfine couplings, the spin lattice relaxation rate exhibits strong anisotropy that cannot be understood in terms of magnetic fluctuations. We find that the spin lattice relaxation rate scales with the shear elastic constant associated with the ferroquadrupole phase transition, suggesting that quadrupole (nematic) fluctuations dominate the spin lattice relaxation for in-plane fields.
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Submitted 23 August, 2021;
originally announced August 2021.
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Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector
Authors:
Xiao Tang,
Kuang-Hui Li,
Yue Zhao,
Yanxin Sui,
Huili Liang,
Zeng Liu,
Che-Hao Liao,
Zengxia Mei,
Weihua Tang,
Xiaohang Li
Abstract:
The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. Th…
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The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC.
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Submitted 1 August, 2020;
originally announced August 2020.
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Using physical features of protein core packing to distinguish real proteins from decoys
Authors:
Alex T. Grigas,
Zhe Mei,
John D. Treado,
Zachary A. Levine,
Lynne Regan,
Corey S. O'Hern
Abstract:
The ability to consistently distinguish real protein structures from computationally generated model decoys is not yet a solved problem. One route to distinguish real protein structures from decoys is to delineate the important physical features that specify a real protein. For example, it has long been appreciated that the hydrophobic cores of proteins contribute significantly to their stability.…
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The ability to consistently distinguish real protein structures from computationally generated model decoys is not yet a solved problem. One route to distinguish real protein structures from decoys is to delineate the important physical features that specify a real protein. For example, it has long been appreciated that the hydrophobic cores of proteins contribute significantly to their stability. As a dataset of decoys to compare with real protein structures, we studied submissions to the bi-annual CASP competition (specifically CASP11, 12, and 13), in which researchers attempt to predict the structure of a protein only knowing its amino acid sequence. Our analysis reveals that many of the submissions possess cores that do not recapitulate the features that define real proteins. In particular, the model structures appear more densely packed (because of energetically unfavorable atomic overlaps), contain too few residues in the core, and have improper distributions of hydrophobic residues throughout the structure. Based on these observations, we developed a deep learning method, which incorporates key physical features of protein cores, to predict how well a computational model recapitulates the real protein structure without knowledge of the structure of the target sequence. By identifying the important features of protein structure, our method is able to rank decoys from the CASP competitions equally well, if not better than, state-of-the-art methods that incorporate many additional features.
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Submitted 4 January, 2020;
originally announced January 2020.
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Impact of disorder on dynamics and ordering in the honeycomb lattice iridate Na$_2$IrO$_3$
Authors:
R. Sarkar,
Z. Mei,
A. Ruiz,
G. Lopez,
H. -H. Klauss,
J. G. Analytis,
I. Kimchi,
N. J. Curro
Abstract:
Kitaev's honeycomb spin-liquid model and its proposed realization in materials such as $α$-RuCl$_3$, Li$_2$IrO$_3$ and Na$_2$IrO$_3$ continue to present open questions about how the dynamics of a spin-liquid are modified in the presence of non-Kitaev interactions as well as the presence of inhomogeneities. Here we use $^{23}$Na nuclear magnetic resonance to probe both static and dynamical magnetic…
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Kitaev's honeycomb spin-liquid model and its proposed realization in materials such as $α$-RuCl$_3$, Li$_2$IrO$_3$ and Na$_2$IrO$_3$ continue to present open questions about how the dynamics of a spin-liquid are modified in the presence of non-Kitaev interactions as well as the presence of inhomogeneities. Here we use $^{23}$Na nuclear magnetic resonance to probe both static and dynamical magnetic properties in single crystal Na$_2$IrO$_3$. We find that the NMR shift follows the bulk susceptibility above 30 K but deviates from it below; moreover below $T_N$ the spectra show a broad distribution of internal magnetic fields. Both of these results provide evidence for inequivalent magnetic sites at low temperature, suggesting inhomogeneities are important for the magnetism. The spin-lattice relaxation rate is isotropic and diverges at $T_N$, suggesting that the Kitaev cubic axes may control the critical quantum spin fluctuations. In the ordered state, we observe gapless excitations, which may arise from site substitution, emergent defects from milder disorder, or possibly be associated with nearby quantum paramagnetic states distinct from the Kitaev spin liquid.
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Submitted 29 January, 2020; v1 submitted 20 September, 2019;
originally announced September 2019.
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Void distributions reveal structural link between jammed packings and protein cores
Authors:
John D. Treado,
Zhe Mei,
Lynne Regan,
Corey S. O'Hern
Abstract:
Dense packing of hydrophobic residues in the cores of globular proteins determines their stability. Recently, we have shown that protein cores possess packing fraction $φ\approx 0.56$, which is the same as dense, random packing of amino acid-shaped particles. In this article, we compare the structural properties of protein cores and jammed packings of amino acid-shaped particles in much greater de…
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Dense packing of hydrophobic residues in the cores of globular proteins determines their stability. Recently, we have shown that protein cores possess packing fraction $φ\approx 0.56$, which is the same as dense, random packing of amino acid-shaped particles. In this article, we compare the structural properties of protein cores and jammed packings of amino acid-shaped particles in much greater depth by measuring their local and connected void regions. We find that the distributions of surface Voronoi cell volumes and local porosities obey similar statistics in both systems. We also measure the probability that accessible, connected void regions percolate as a function of the size of a spherical probe particle and show that both systems possess the same critical probe size. By measuring the critical exponent $τ$ that characterizes the size distribution of connected void clusters at the onset of percolation, we show that void percolation in packings of amino acid-shaped particles and protein cores belong to the same universality class, which is different from that for void percolation in jammed sphere packings. We propose that the connected void regions of proteins are a defining feature of proteins and can be used to differentiate experimentally observed proteins from decoy structures that are generated using computational protein design software. This work emphasizes that jammed packings of amino acid-shaped particles can serve as structural and mechanical analogs of protein cores, and could therefore be useful in modeling the response of protein cores to cavity-expanding and -reducing mutations.
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Submitted 31 October, 2018;
originally announced November 2018.
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Matrix product solution of the stationary states of two-species open zero range processes
Authors:
Zhongtao Mei,
Jaeyoon Cho
Abstract:
Using the matrix product ansatz, we obtain solutions of the steady-state distribution of the two-species open one-dimensional zero range process. Our solution is based on a conventionally employed constraint on the hop rates, which eventually allows us to simplify the constituent matrices of the ansatz. It is shown that the matrix at each site is given by the tensor product of two sets of matrices…
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Using the matrix product ansatz, we obtain solutions of the steady-state distribution of the two-species open one-dimensional zero range process. Our solution is based on a conventionally employed constraint on the hop rates, which eventually allows us to simplify the constituent matrices of the ansatz. It is shown that the matrix at each site is given by the tensor product of two sets of matrices and the steady-state distribution assumes an inhomogeneous factorized form. Our method can be generalized to the cases of more than two species of particles.
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Submitted 23 March, 2019; v1 submitted 21 September, 2018;
originally announced September 2018.
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GaZn-VZn acceptor complex defect in Ga-doped ZnO
Authors:
Aihua Tang,
Zengxia Mei,
Yaonan Hou,
Lishu Liu,
Vishnukanthan Venkatachalapathy,
Alexander Azarov,
Andrej Kuznetsov,
Xiaolong Du
Abstract:
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth…
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Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semiconductors. Here we report a systematic study of (GaZn-VZn)- acceptor complex defect via zinc self-diffusion in Ga-doped ZnO isotopic heterostructures, which were conceived and prepared with delicately controlled growth conditions. The secondary ion mass spectrometry and temperature-dependent Hall-effect measurements reveal that a high density of controllable (GaZn-VZn)- is the predominant compensating defect in Ga-doped ZnO. The binding energy of this complex defect obtained from zinc self-diffusion experiments (~0.78 eV) well matches the electrical activation energy derived from the temperature-dependent electrical measurements (~0.82 eV). The compensation ratios were quantitatively calculated by energetic analysis and scattering process to further validate the compensation effect of (GaZn-VZn)- complex in Ga-doped ZnO. Meanwhile, its energy level structure was suggested based on the photoluminescence spectra, and the lifetime was achieved from the time-resolved photoluminescence measurements. The electron transitions between the (GaZn-VZn)- complex defect levels emit the light at ~650 nm with a lifetime of 10-20 nanoseconds. These findings may greatly pave the way towards novel complex defects-derived optical applications.
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Submitted 22 September, 2017;
originally announced September 2017.
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Optically detected magnetic resonance of nitrogen vacancies in a diamond anvil cell using designer diamond anvils
Authors:
L. Steele,
M. Lawson,
M. Onyszczak,
B. T. Bush,
Z. Mei,
A. P. Dioguardi,
J. King,
A. Parker,
A. Pines,
S. T. Weir,
W. Evans,
K. Visbeck,
Y. K. Vohra,
N. J. Curro
Abstract:
Optically detected magnetic resonance of nitrogen vacancy centers in diamond offers novel routes to both DC and AC magnetometry in diamond anvil cells under high pressures ($>3$ GPa). However, a serious challenge to realizing experiments has been the insertion of microwave radiation in to the sample space without screening by the gasket material. We utilize designer anvils with lithographically-de…
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Optically detected magnetic resonance of nitrogen vacancy centers in diamond offers novel routes to both DC and AC magnetometry in diamond anvil cells under high pressures ($>3$ GPa). However, a serious challenge to realizing experiments has been the insertion of microwave radiation in to the sample space without screening by the gasket material. We utilize designer anvils with lithographically-deposited metallic microchannels on the diamond culet as a microwave antenna. We detected the spin resonance of an ensemble of microdiamonds under pressure, and measure the pressure dependence of the zero field splitting parameters. These experiments enable the possibility for all-optical magnetic resonance experiments on sub-$μ$L sample volumes at high pressures.
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Submitted 11 September, 2017;
originally announced September 2017.
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Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All Oxide Materials
Authors:
Yonghui Zhang,
Zengxia Mei,
Shujuan Cui,
Huili Liang,
Yaoping Liu,
Xiaolong Du
Abstract:
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.
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Submitted 21 February, 2017;
originally announced February 2017.
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Derivation of matrix product states for the Heisenberg spin chain with open boundary conditions
Authors:
Zhongtao Mei,
C. J. Bolech
Abstract:
Using the algebraic Bethe ansatz, we derive a matrix product representation of the exact Bethe-ansatz states of the six-vertex Heisenberg chain (either XXX or XXZ and spin-$\frac{1}{2}$) with open boundary conditions. In this representation, the components of the Bethe eigenstates are expressed as traces of products of matrices which act on a tensor product of auxiliary spaces. As compared to the…
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Using the algebraic Bethe ansatz, we derive a matrix product representation of the exact Bethe-ansatz states of the six-vertex Heisenberg chain (either XXX or XXZ and spin-$\frac{1}{2}$) with open boundary conditions. In this representation, the components of the Bethe eigenstates are expressed as traces of products of matrices which act on a tensor product of auxiliary spaces. As compared to the matrix product states of the same Heisenberg chain but with periodic boundary conditions, the dimension of the exact auxiliary matrices is enlarged as if the conserved number of spin-flips considered would have been doubled. This result is generic for any non-nested integrable model, as is clear from our derivation and we further show by providing an additional example of the same matrix product state construction for a well known model of a gas of interacting bosons. Counterintuitively, the matrices do not depend on the spatial coordinate despite the open boundaries and thus suggest generic ways of exploiting (emergent) translational invariance both for finite size and in the thermodynamic limit.
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Submitted 13 July, 2017; v1 submitted 26 September, 2016;
originally announced September 2016.
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Oxygen vacancies: The origin of n-type conductivity in ZnO
Authors:
Lishu Liu,
Zengxia Mei,
Aihua Tang,
Alexander Azarov,
Andrej Kuznetsov,
Qi-Kun Xue,
Xiaolong Du
Abstract:
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffu…
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Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental understanding of VO is still very sparse. Specifically, whether VO is mainly responsible for the n-type conductivity in ZnO has been still unsettled in the past fifty years. Here we report on a study of oxygen self-diffusion by conceiving and growing oxygen-isotope ZnO heterostructures with delicately-controlled chemical potential and Fermi level. The diffusion process is found to be predominantly mediated by VO. We further demonstrate that, in contrast to the general belief of their neutral attribute, the oxygen vacancies in ZnO are actually +2 charged and thus responsible for the unintentional n-type conductivity as well as the non-stoichiometry of ZnO. The methodology can be extended to study oxygen-related point defects and their energetics in other technologically important oxide materials.
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Submitted 17 June, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Unveiling hidden structure of many-body wavefunctions of integrable systems via sudden expansion experiments
Authors:
Zhongtao Mei,
L. Vidmar,
F. Heidrich-Meisner,
C. J. Bolech
Abstract:
In the theory of Bethe-ansatz integrable quantum systems, rapidities play an important role as they are used to specify many-body states, apart from phases. The physical interpretation of rapidities going back to Sutherland is that they are the asymptotic momenta after letting a quantum gas expand into a larger volume making it dilute and noninteracting. We exploit this picture to make a direct co…
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In the theory of Bethe-ansatz integrable quantum systems, rapidities play an important role as they are used to specify many-body states, apart from phases. The physical interpretation of rapidities going back to Sutherland is that they are the asymptotic momenta after letting a quantum gas expand into a larger volume making it dilute and noninteracting. We exploit this picture to make a direct connection to quantities that are accessible in sudden-expansion experiments with ultracold quantum gases. By a direct comparison of Bethe-ansatz and time-dependent density matrix renormalization group results, we demonstrate that the expansion velocity of a one-dimensional Fermi-Hubbard model can be predicted from knowing the distribution of occupied rapidities defined by the initial state. Curiously, an approximate Bethe-ansatz solution works well also for the Bose-Hubbard model.
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Submitted 21 February, 2016; v1 submitted 2 September, 2015;
originally announced September 2015.
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Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Authors:
Lishu Liu,
Zengxia Mei,
Yaonan Hou,
Huili Liang,
Alexander Azarov,
Vishnukanthan Venkatachalapathy,
Andrej Kuznetsov,
Xiaolong Du
Abstract:
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxi…
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N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0E19 F/cm3.The dramatically increased carrier concentration (2.85E17 cm-3 vs ~1014 cm-3) and decreased resistivity (129 ohm.cm vs ~10E6 ohm cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89E9 cm Hz1/2/W to 3.58eE10 cm Hz1/2/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.
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Submitted 16 June, 2016; v1 submitted 19 September, 2014;
originally announced September 2014.
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Exciton and hole spin dynamics in ZnO
Authors:
D. Lagarde,
A. Balocchi,
P. Renucci,
H. Carrère,
F. Zhao,
T. Amand,
X. Marie,
Z. X. Mei,
X. L. Du,
Q. K. Xue
Abstract:
The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and tempera…
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The carrier spin dynamics in ZnO is investigated by time-resolved optical orientation experiments. We evidence a clear circular polarization of the donor-bound exciton luminescence in both ZnO epilayer and non-intentionally doped bulk ZnO. This allows us to measure the localized hole spin relaxation time. We find $τ^{s}_h$$\sim$350 ps at T=1.7 K in the ZnO epilayer. The strong energy and temperature dependences of the photoluminescence polarization dynamics are well explained by the fast free exciton spin relaxation time and the ionization of bound excitons.
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Submitted 15 April, 2008;
originally announced April 2008.
