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Direct Exfoliation of Nanoribbons from Bulk van der Waals Crystals
Authors:
Ashley P. Saunders,
Victoria Chen,
Jierong Wang,
Amalya C. Johnson,
Amy S. McKeown-Green,
Helen J. Zeng,
T. Kien Mac,
Tuan Trinh,
Tony F. Heinz,
Eric Pop,
Fang Liu
Abstract:
Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free appr…
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Confinement of monolayers into quasi-one-dimensional atomically-thin nanoribbons could lead to novel quantum phenomena beyond those achieved in their bulk and monolayer counterparts. However, current experimental availability of nanoribbon species beyond graphene has been limited to bottom-up synthesis or top-down patterning. In this study, we introduce a versatile and direct lithography-free approach to exfoliate a variety of bulk van der Waals (vdW) crystals into nanoribbons. Akin to the Scotch tape exfoliation in producing monolayers, this technique provides convenient access to a wide range of nanoribbons derived from their corresponding bulk crystals, including MoS2, WS2, MoSe2, WSe2, MoTe2, WTe2, ReS2, and hBN. The nanoribbons are single-crystalline, parallel-aligned, flat, and have high aspect ratio. We demonstrated the electrical, magnetic, and optical properties from the confinement, strain, and edge configurations of these nanoribbons. This versatile preparation technique will pave the way for future experimental investigation and broad applications in optoelectronic, sensing, electronic and quantum devices.
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Submitted 17 February, 2024;
originally announced February 2024.
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Millimeter-scale exfoliation of hBN with tunable flake thickness
Authors:
Amy S. McKeown-Green,
Helen J. Zeng,
Ashley P. Saunders,
Jiayi Li,
Jenny Hu,
Jiaojian Shi,
Yuejun Shen,
Feng Pan,
Jennifer A. Dionne,
Tony F. Heinz,
Stephen Wu,
Fan Zheng,
Fang Liu
Abstract:
As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-fi…
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As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices.
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Submitted 2 November, 2023;
originally announced November 2023.
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Examining the Role of Chloride Ligands on Defect Removal in Imperfectly Attached Semiconductor Nanocrystals for 1D and 2D Attachment Cases
Authors:
Amy S. McKeown-Green,
Justin C. Ondry,
Michelle F. Crook,
Jason J. Calvin,
A. Paul Alivisatos
Abstract:
Semiconducting, core-shell nanocrystals (NCs) are promising building blocks for the construction of higher dimensional artificial nanostructures using oriented attachment. However, the assembly and epitaxial attachment steps critical to this construction introduce disorder and defects which inhibit the observation of desirable emergent electronic phenomena. Consequently, understanding defect forma…
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Semiconducting, core-shell nanocrystals (NCs) are promising building blocks for the construction of higher dimensional artificial nanostructures using oriented attachment. However, the assembly and epitaxial attachment steps critical to this construction introduce disorder and defects which inhibit the observation of desirable emergent electronic phenomena. Consequently, understanding defect formation and remediation in these systems as a function of dimensionality is a crucial step to perfecting their synthesis. In this work, we use in situ high resolution transmission electron microscopy to examine the role of chloride ligands as remediator agents for imperfect attachment interfaces between CdSe/CdS core-shell NCs for both 1D and 2D attachment cases. In the 1D case, we find that the presence of chloride additives in imperfectly attached NC dimers can result in defect removal speeds nearly twice as large as those found in their plain, non-chloride treated counterparts. However, when we increased the dimensionality of the system and examined 2D NC arrays, we found no statistically significant difference in attachment interface quality between the chloride and non-chloride treated samples. We propose that this discongruity arises from fundamental differences between 1D and 2D NC attachment and discuss synthetic guidelines to inform future nanomaterial superlattice design.
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Submitted 10 October, 2022;
originally announced October 2022.
